UNISONIC TECHNOLOGIES CO., LTD
|
|
- Marianna Edwards
- 6 years ago
- Views:
Transcription
1 UNISONIC TECHNOLOGIES CO., LTD COMPLEMENTARY OUTPUTS HALL EFFECT LATCH IC DESCRIPTION The UTC UH276 is a Latch-Type Hall Effect sensor with built-in complementary output drivers. It s designed with internal temperature compensation circuit and built-in protection diode prevent reverse power fault. The application is aimed for brush-less DC Fan The UH276 Outputs operate as the Hysteresis Characteristics. The Outputs alternately ON and OFF when either the magnetic flux density larger than threshold B OP or the magnetic flux density lower than B RP. FEATURES * Widen Power Supply range from 3V ~ 2V. * On-chip Hall sensor with excellent hysteresis. * Open Collector outputs had the sinking capability up to 4mA. * Output Clamping Diodes reduce the peak output voltages during switching. * Build-in reverse protection diode. ORDERING INFORMATION Ordering Number Package Packing UH276G-G4-K SIP-4 Bulk MARKING 1 of 5 Copyright 215 Unisonic Technologies Co., Ltd
2 PIN DESCRIPTION PIN NO. PIN NAME P/I/O DESCRIPTION 1 V CC P Positive Power Supply 2 O Output Pin 3 B O Output Pin 4 V SS P Ground BLOCK DIAGRAM SENSOR LOCATIONS UNISONIC TECHNOLOGIES CO., LTD 2 of 5
3 ABSOLUTE MAXIMUM RATINGS (T A =25 C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Supply Voltage V CC 2 V Reverse V CC Polarity Voltage V RCC -25 V Output OFF Voltage V CE 32 V Magnetic flux density B Unlimited Continuous.4 Output ON Current Hold I C.5 A Peak (Start Up).7 Power Dissipation P D 5 mw Junction Temperature T J +15 C Operating Temperature T OPR -2 ~ +85 C Storage Temperature T STG -65 ~ +15 C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Output Zener protection voltage ELECTRICAL CHARACTERISTICS (T A =25 C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Low Supply Voltage V CE V CC =3.5V, I L =1mA.6 V Supply Voltage V CC 3 2 V Output Saturation Voltage V CE(SAT) V CC =14V, I L =4mA.6.9 V Output Leakage Current I CEX V CE =14V, V CC =14V <.1 1 μa Supply Current I CC V CC =2V, Output Open ma Output Rise Time t R V CC =14V, R L =82Ω, C L =2pF.3 3 μs Output Falling Time t F V CC =14V, R L =82Ω, C L =2pF.4 1 μs Switch Time Differential t V CC =14V, R L =82Ω, C L =2pF.3 3 μs MAGNETIC CHARACTERISTICS A grade Operate Point B OP 1 5 G Release Point B RP -5-1 G Hysteresis B HYS 2 1 G B grade Operate Point B OP 5 7 G Release Point B RP -7-5 G Hysteresis B HYS 2 14 G C grade Operate Point B OP 1 G Release Point B RP -1 G Hysteresis B HYS 2 2 G UNISONIC TECHNOLOGIES CO., LTD 3 of 5
4 CHYSTERESIS CHARACTERISTICS Output Voltage in Volts B ON B HY OFF B Output Voltage in Volts OFF B HY ON Brp Bop Magnetic Flux Density in Gauss Brp Bop Magnetic Flux Density in Gauss TYPICAL APPLICATION CIRCUIT TEST CIRCUIT 14V UH276 R L1 82Ω B R L2 82Ω C L1 2pF C L2 2pF UNISONIC TECHNOLOGIES CO., LTD 4 of 5
5 PERFORMANCE CHARACTERISTICS T A ( C) P D (mw) Typical Magnetic Switch Point VS.Supply Voltage BHYS BOP -25 BRP Supply Voltage (V) Supply Current (ma) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD 5 of 5
UNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD COMPLEMENTARY OUTPUTS HALL EFFECT LATCH IC DESCRIPTION The UTC UH277 is a Latch-Type Hall Effect sensor with built-in complementary output drivers. It s designed with internal
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD COMPLEMENTARY OUTPUT HALL EFFECT LATCH DESCRIPTION The UTC H654 is integrated Hall sensors with complementary output drivers designed for electronic commutation of brushless
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD BIPOLAR LATCH TYPE HALL EFFECT FOR HIGH-TEMPERATURE OPERATION DESCRIPTION 1 SIP-3 The UTC SK1816 is a semiconductor integrated circuit utilizing the Hall effect. It designed
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD BIPOLAR LATCH TYPE HALL EFFECT FOR HIGH-TEMPERATURE OPERATION DESCRIPTION The UTC SK1816 is a semiconductor integrated circuit utilizing the Hall effect. It designed to operate
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD BIPOLAR LATCH TYPE HALL EFFECT FOR HIGH-TEMPERATURE OPERATION DESCRIPTION 1 SIP-3 The UTC SK1816 is a semiconductor integrated circuit utilizing the Hall effect. It designed
More informationATS276 X - P X - B - X. Lead Free L : Lead Free G : Green
Features General Description On-Chip Hall Sensor with Two Different Sensitivity and Hysteresis Settings for ATS276 3.5V to 2V Operating Voltage 4mA (avg.) Output Sink Current Built-in Protecting Diode
More informationUNISONIC TECHNOLOGIES CO., LTD U2429
UNISONIC TECHNOLOGIES CO., LTD U2429 SERIAL DATA CONTROL DUAL ELECTRONIC VOLUME DESCRIPTION The UTC U2429 is a dual channel electronic volume controlled with 2-wire serial data. The built-in reference
More informationATS177. General Description. Features. Applications. Ordering Information SINGLE OUTPUT HALL EFFECT LATCH ATS177 - P L - X - X
Features General Description 3.5V to 20V DC operation voltage Temperature compensation Wide operating voltage range Open-Collector pre-driver 25mA maximum sinking output current Reverse polarity protection
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD BILATERAL SWITCH DESCRIPTION The UTC U74HC1G66 is a high-speed Si-gate CMOS device that provides an analog switch. The switch has two input/output pins(y and Z) and an active
More informationUNISONIC TECHNOLOGIES CO., LTD U74HC14
UNISONIC TECHNOLOGIES CO., LTD U74HC14 HIGH-SPEED CMOS LOGIC HEX INVERTING SCHMITT TRIGGER DESCRIPTION The UTC U74HC14 each contain six inverting Schmitt triggers in one package. Each of them perform the
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS DESCRIPTION The U74LVC125A consists of four bus buffers with 3-state output controlled by enable input ( ΟΕ ), when ΟΕ is high,
More informationUNISONIC TECHNOLOGIES CO., LTD U74LVC1G125
UNISONIC TECHNOLOGIES CO., LTD U74LVC1G125 BUS BUFFER/LINE DRIVER 3-STATE DESCRIPTION The U74LVC1G125 is a single bus buffer/line driver with 3-state output. When the output enable ( ΟΕ ) is high the output
More informationUNISONIC TECHNOLOGIES CO., LTD
U74LC1G04 UNISONIC TECHNOLOGIES CO., LTD SINGLE INERTER GATE DESCRIPTION The UTC U74LC1G04 is a single inverter gate, it provides the function Y = A. This device has power-down protective circuit, preventing
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD SINGLE BUS BUFFER GATE WITH 3-STATE OUTPUT DESCRIPTION The U74AUC1G126 is single bus buffer gate with 3-state output. The output is disabled When the output enable (OE) is
More informationBlock Diagram 1 REG. VCC 2 Hall Plate Amp B 3 GND 4 Pin Assignment 277 (276) Front View 1 : VCC 2 : 3 : B :GND Name P/I/O Pin # Desc
E-MAIL: Features - On-chip Hall sensor with two different sensitivity and hysteresis settings for - 3.5V to 2V operating voltage - 4mA (avg) output sink current - Build-in protecting diode only for chip
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD BUS BUFFER/LINE DRIVER 3-STATE DESCRIPTION The U74LVC1G125 is a single bus buffer/line driver with 3-state output. When the output enable ( ΟΕ ) is high the output will be
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS DESCRIPTION The U74LVC125A consists of four bus buffers with 3-state output controlled by enable input ( ΟΕ ), when ΟΕ is high,
More informationHIGH VOLTAGE HALL EFFECT LATCH General Description. Features. Applications
General Description The is an integrated Hall sensor with output driver designed for electronic commutation of brushless DC motor applications. The device includes an onchip Hall sensor for magnetic sensing,
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD SINGLE 2-LINE TO 1-LINE DATA SELECTOR OR MULTIPLEXER DESCRIPTION The U74LC2G157 is a single 2-line to 1-line data selector or multiplexer which is featured a common strobe
More informationUNISONIC TECHNOLOGIES CO., LTD L16B45 Preliminary CMOS IC
UNISONIC TECHNOLOGIES CO., LTD L16B45 Preliminary CMOS IC 16-BIT CONSTANT CURRENT LED SINK DRIVER DESCRIPTION The UTC L16B45 is designed for LED displays. UTC L16B45 contains a serial buffer and data latches
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD LOW DROP POSITIE OLTAGE REGULATORS DESCRIPTION The UTC LR1118 is a low drop voltage regulator able to provide up to 1A of output current, available also for adjustable version
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD DUAL BUS BUFFER GATE WITH 3-STATE OUTPUTS DESCRIPTION The U74LVC2G125L consists of two bus buffers with 3-state output controlled by enable input (noe), when noe is high,
More informationUNISONIC TECHNOLOGIES CO., LTD UR133/A
UNISONIC TECHNOLOGIES CO., LTD 300/500mA LOW DROPOUT LINEAR VOLTAGE REGULATORS 3 1 2 1 DESCRIPTION SOT-23 (EIAJ SC-59) SOT-223 The UTC are 300/500mA fixed output voltage low dropout linear regulators.
More informationUNISONIC TECHNOLOGIES CO., LTD U74HC164
UNISONIC TECHNOLOGIES CO., LTD 8-BIT SERIAL-IN AND PARALLEL-OUT SHIFT REGISTER DIP-14 DESCRIPTION The is an 8-bit edge-triggered shift registers with serial input and parallel output. A LOW-to-HIGH transition
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 3-TERMINALS 1A POSITIVE VOLTAGE REGULATOR DESCRIPTION The UTC 78DXXA family is monolithic fixed voltage regulator integrated circuit. They are suitable for applications that
More informationUNISONIC TECHNOLOGIES CO., LTD U74HC244
UNISONIC TECHNOLOGIES CO., LTD OCTAL BUFFER AND LINE DRIVER WITH 3-STATE OUTPUT DESCRIPTION DIP-20 The are octal buffer and line drivers with non-inverting 3-state outputs. When n OE is High, the outputs
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD LOW DROP FIXED AND ADJUSTABLE POSITIE OLTAGE REGULATORS DESCRIPTION The UTC is a low dropout, 3-terminal positive voltage regulator designed to provide output current up
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 1A LOW-DROPOUT POSITIE OLTAGE REGULATOR 1 DESCRIPTION The UTC is a low dropout regulator designed to provide output current up to 1A with a typically 5m dropout oltage and
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD LOW DROP FIXED AND ADJUSTABLE POSITIE OLTAGE REGULATORS DESCRIPTION The UTC is a low dropout, 3-terminal positive voltage regulator designed to provide output current up
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD LOW DROP FIXED AND ADJUSTABLE POSITIE OLTAGE REGULATORS DESCRIPTION The UTC is a low dropout, 3-terminal positive voltage regulator designed to provide output current up
More informationUNISONIC TECHNOLOGIES CO., LTD UR6225
UNISONIC TECHNOLOGIES CO., LTD UR6225 POSITIVE VOLTAGE REGULATOR DESCRIPTION The UTC UR6225 is a positive voltage output, three-pin regulator that provides a high current even when the input/output voltage
More informationUNISONIC TECHNOLOGIES CO., LTD R070LD10
UNISONIC TECHNOLOGIES CO., LTD VOLTGE REGULTOR DESCRIPTION s the UTC linear integrated LDO, the UTC shows a high current, high accuracy, low-dropout voltage which built in on/off function. The features
More informationUNISONIC TECHNOLOGIES CO., LTD TDA7269
UNISONIC TECHNOLOGIES CO., LTD TDA7269 14W+14W STEREO AMPLIFIER WITH MUTE & STAND-BY DESCRIPTION The UTC TDA7269 is a stereo 14+14W class AB Dual Audio Power amplifier with mute and ST-BY control. This
More informationUNISONIC TECHNOLOGIES CO., LTD LM78XX
UNISONIC TECHNOLOGIES CO., LTD LM78XX 3-TERMINAL 1A POSITIVE VOLTAGE REGULATOR 1 TO-220 DESCRIPTION The UTC LM78XX family is monolithic fixed voltage regulator integrated circuit. They are suitable for
More informationUNISONIC TECHNOLOGIES CO., LTD U74AHC1G66
UNISIC TECHNOLOGIES CO., LTD BILATERAL SWITCH DESCRIPTI The UTC is an analog switch which transmits signals from pin(y or Z) to pin (Z or Y) with an active HIGH enable input pin (E). When pin E is LOW,
More informationGeneral Description DTS27X X -X X X -X. Lead. 27X coil1. R1 = R2 = 470Ω C1 = C2 = 2.2 μ F The R, C value need to be fine tuned base on coils design.
Features - On-chip Hall sensor with two different sensitivity and hysteresis settings for - 3.5V to 18V operating voltage - 35mA (avg) output sink current - Built-in protecting diode only for chip reverse
More informationUNISONIC TECHNOLOGIES CO., LTD
U74ACT157 UNISONIC TECNOOGIES CO., TD QUADRUPE 2-INE TO 1-INE DATA SEECTOR/ MUTIPEER DESCRIPTION The U74ACT157 is a quadruple 2-line to 1-line data selector/multiplexer. When G is high, all outputs are
More informationUNISONIC TECHNOLOGIES CO., LTD
U74C563 UNISONIC TECNOOGIES CO., TD OCTA TRANSPARENT D-TYPE ATCES WIT 3-STATE OUTPUTS DESCRIPTION The U74C563 is a octal traparent D-TYPE latches with 3-state outputs. When the latch-enable (E) is high,
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 3-TERMINAL 1A POSITIVE VOLTAGE REGULATOR DESCRIPTION The UTC LM78XX family is monolithic fixed voltage regulator integrated circuit. They are suitable for applications that
More informationSilicon Diffused Darlington Power Transistor
GENERAL DESCRIPTION Highvoltage, monolithic npn power Darlington transistor in a SOT93 envelope intended for use in car ignition systems, DC and AC motor controls, solenoid drivers, etc. QUICK REFERENCE
More informationDISCRETE SEMICONDUCTORS DATA SHEET. book, halfpage M3D302. PBSS4240DPN 40 V low V CEsat NPN/PNP transistor. Product specification 2003 Feb 20
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D32 PBSS424DPN 4 V low V CEsat NPN/PNP transistor 23 Feb 2 FEATURES Low collector-emitter saturation voltage V CEsat High collector current capability
More informationDATA SHEET. PBSS5350D 50 V low V CEsat PNP transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Jul Nov 13.
DISCRETE SEMICONDUCTORS DATA SHEET age M3D302 PBSS5350D 50 V low V CEsat PNP transistor Supersedes data of 2001 Jul 13 2001 Nov 13 FEATURES Low collector-emitter saturation voltage High current capability
More informationNPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.
Rev. 02 14 July 2005 Product data sheet 1. Product profile 1.1 General description NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD)
More informationDATA SHEET. PH2369 NPN switching transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr Oct 11.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1999 Apr 27 2004 Oct 11 FEATURES Low current (max. 200 ma) Low voltage (max. 15 V). APPLICATIONS High-speed switching. PINNING
More informationDATA SHEET. PMEM4010ND NPN transistor/schottky diode module DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2002 Oct 28.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 NPN transistor/schottky diode module Supersedes data of 2002 Oct 28 2003 Jul 04 FEATURES 600 mw total power dissipation High current capability
More informationDISCRETE SEMICONDUCTORS DATA SHEET. ok, halfpage M3D302. PMEM4020ND NPN transistor/schottky-diode module. Product data sheet 2003 Nov 10
DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D302 NPN transistor/schottky-diode module 2003 Nov 0 FEATURES 600 mw total power dissipation High current capability Reduces required PCB area Reduced
More informationDATA SHEET. PBSS4540Z 40 V low V CEsat NPN transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Jul Nov 14.
DISCRETE SEMICONDUCTORS DATA SHEET age M3D087 PBSS4540Z 40 V low V CEsat NPN transistor Supersedes data of 2001 Jul 24 2001 Nov 14 FEATURES Low collector-emitter saturation voltage High current capabilities
More informationDATA SHEET. BC817DPN NPN/PNP general purpose transistor DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2002 Aug 09.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 NPN/PNP general purpose transistor Supersedes data of 2002 Aug 09 2002 Nov 22 FEATURES High current (500 ma) 600 mw total power dissipation Replaces
More informationUNISONIC TECHNOLOGIES CO., LTD L16B40 Preliminary CMOS IC
UNISONIC TECHNOLOGIES CO., LT L16B40 Preliminary CMOS IC 16-BIT CONSTANT CURRENT LE RIER WITH BUILT-IN TO ELIMINATE THE GHOSTING ESCRIPTION SSOP-24 UTC L16B40 is a new 16-bit cstant current LE driver IC
More informationDATA SHEET. PEMD48; PUMD48 NPN/PNP resistor-equipped transistors; R1 = 47 kω, R2 = 47 kω and R1 = 2.2 kω, R2 = 47 kω DISCRETE SEMICONDUCTORS
DISCRETE SEMICONDUCTORS DATA SHEET NPN/PNP resistor-equipped transistors; R1 = 47 kω, R2 = 47 kω and R1 = 2.2 kω, R2 = 47 kω Supersedes data of 2004 Jun 02 2004 Jun 24 FEATURES Built-in bias resistors
More informationDATA SHEET. BC368 NPN medium power transistor; 20 V, 1 A DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Dec 01.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D86 Supersedes data of 2003 Dec 0 2004 Nov 05 FEATURES High current. APPLICATIONS Linear voltage regulators Low side switch Supply line switch for negative
More informationDATA SHEET. BC856; BC857; BC858 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Apr 09
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 23 Apr 9 24 Jan 16 FEATURES Low current (max. 1 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification. PINNING PIN
More informationDATA SHEET. BC846; BC847; BC848 NPN general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2002 Feb 04
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 22 Feb 4 24 Feb 6 FEATURES Low current (max. 1 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification. PINNING PIN 1
More informationDATA SHEET. BC856; BC857; BC858 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 12
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D88 Supersedes data of 1999 Apr 12 22 Feb 4 FEATURES Low current (max. 1 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification.
More informationS-57P1 S Series FOR AUTOMOTIVE 150 C OPERATION HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH IC. Features. Applications.
www.ablicinc.com FOR AUTOMOTIVE 150 C OPERATION HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH IC ABLIC Inc., 2015-2017 This IC, developed by CMOS technology, is a high-accuracy Hall effect
More informationDATA SHEET. BC369 PNP medium power transistor; 20 V, 1 A DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Nov 20.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 23 Nov 2 24 Nov 5 FEATURES High current Two current gain selections. APPLICATIONS Linear voltage regulators High side switches
More informationS-5743 A Series 125 C OPERATION HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH IC. Features. Applications. Package.
www.ablicinc.com S-5743 A Series 125 C OPERATION HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH IC ABLIC Inc., 2015-2017 Rev.1.1_02 This IC, developed by CMOS technology, is a high-accuracy
More informationInsulated Gate Bipolar Transistor (IGBT)
BUK856-8A GENERAL DESCRIPTION QUICK REFERENCE DATA Fast-switching N-channel insulated SYMBOL PARAMETER MAX. UNIT gate bipolar power transistor in a plastic envelope. V CE Collector-emitter voltage 8 V
More informationDISCRETE SEMICONDUCTORS DATA SHEET. PMBT3906 PNP switching transistor. Product specification Supersedes data of 1999 Apr 27.
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 1999 Apr 27 2004 Jan 21 FEATURES Collector current capability I C = 200 ma Collector-emitter voltage V CEO = 40 V. APPLICATIONS General amplification
More informationDetection of S pole Detection of N pole Active "L" Active "H" Nch open-drain output Nch driver built-in pull-up resistor. f C = 250 khz typ.
www.ablic.com www.ablicinc.com S-5732 B Series 125 C OPERATION HIGH-WITHSTAND VOLTAGE HIGH-SPEED UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC ABLIC Inc., 2016-2017 Rev.2.1_02 This IC, developed by CMOS
More informationDATA SHEET. BC846W; BC847W; BC848W NPN general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 23
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D12 Supersedes data of 1999 Apr 23 22 Feb 4 FEATURES Low current (max. 1 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification.
More informationDATA SHEET. PBSS4480X 80 V, 4 A NPN low V CEsat (BISS) transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2004 Aug 5
DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D09 Supersedes data of 2004 Aug 5 2004 Oct 25 FEATURES High h FE and low V CEsat at high current operation High collector current capability: I C maximum
More informationA1244 Chopper-Stabilized, Two Wire Hall-Effect Latch
Features and Benefits High speed, 4-phase chopper stabilization Low switchpoint drift throughout temperature range Low sensitivity to thermal and mechanical stresses On-chip protection Supply transient
More informationS-57M1 Series HIGH-SPEED BIPOLAR HALL EFFECT LATCH. Features. Applications. Package. ABLIC Inc., Rev.1.
www.ablic.com www.ablicinc.com HIGH-SPEED BIPOLAR HALL EFFECT LATCH ABLIC Inc., 2011-2013 Rev.1.2_02 The, developed by CMOS technology, is a high-accuracy Hall IC that operates with a high-sensitivity,
More informationDISCRETE SEMICONDUCTORS DATA SHEET M3D071. BAT74 Schottky barrier double diode. Product specification Supersedes data of 1996 Mar 19.
DISCRETE SEMICONDUCTORS DATA SHEET M3D07 Supersedes data of 996 Mar 9 200 Sep 05 FEATURES Low forward voltage Guard ring protected Small plastic SMD package. APPLICATIONS Ultra high-speed switching Voltage
More informationS-57K1 A Series FOR AUTOMOTIVE 125 C OPERATION HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH IC. Features. Applications.
www.ablic.com FOR AUTOMOTIVE 125 C OPERATION HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH IC ABLIC Inc., 2013-2019 This IC, developed by CMOS technology, is a high-accuracy Hall effect latch
More informationMT3451 Series BiCMOS, Latch, Hall-Effect Magnetic Position Sensors
Features and Benefits BiCMOS Technology Magnetic Type: Latch Wide Operating Voltage Range: Supply Voltage 2.8~24V Specified Operating Temperature Range: From -40 ~ 150 High Magnetic Sensitivity B OP =20Gauss,
More informationHigh Reliability Hallogic Hall- Effect Sensors OMH090, OMH3019, OMH3020, OMH3040, OMH3075, OMH3131 (B, S versions)
High Reliability Hallogic Hall Features: Designed for noncontact switching operations Operates over a broad range of supply voltages Excellent temperature stability operates in harsh environments Suitable
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 217 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
More informationPMV65XP. 1. Product profile. 2. Pinning information. P-channel TrenchMOS extremely low level FET. 1.1 General description. 1.
Rev. 1 28 September 24 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode field effect transistor in a plastic package using TrenchMOS technology. 1.2 Features Low
More information2N7002T. 1. Product profile. 2. Pinning information. N-channel TrenchMOS FET. 1.1 General description. 1.2 Features. 1.
Rev. 1 17 November 25 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features
More informationDATA SHEET. PBSS4250X 50 V, 2 A NPN low V CEsat (BISS) transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Jun 17
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D9 Supersedes data of 2003 Jun 17 2004 Nov 08 FEATURES SOT89 (SC-62) package Low collector-emitter saturation voltage V CEsat High collector current
More informationSilicon Diffused Power Transistor
GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a fully isolated SOT99 envelope, primarily for use in horizontal deflection circuits of colour television receivers. QUICK REFERENCE
More informationTOPFET high side switch
DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MIN. UNIT overload protected power switch based on MOSFET technology in a I L Nominal load current (ISO) 9 A pin plastic envelope,
More informationDATA SHEET. BCP69 PNP medium power transistor; 20 V, 1 A DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2002 Nov 15.
DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D087 Supersedes data of 2002 Nov 15 2003 Nov 25 FEATURES High current Three current gain selections 1.4 W total power dissipation. APPLICATIONS Linear
More informationChopper-Stabilized, Two Wire Hall-Effect Switches
FEATURES AND BENEFITS High speed, 4-phase chopper stabilization Low switchpoint drift throughout temperature range Low sensitivity to thermal and mechanical stresses On-chip protection Supply transient
More information2N7002F. 1. Product profile. 2. Pinning information. N-channel TrenchMOS FET. 1.1 General description. 1.2 Features. 1.
Rev. 3 28 April 26 Product data sheet. Product profile. General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology..2 Features Logic level
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
More informationDATA SHEET. BSS192 P-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1997 Jun 20
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D19 Supersedes data of 1997 Jun 2 22 May 22 FEATURES Direct interface to C-MOS, TTL, etc. High-speed switching No secondary breakdown. APPLICATIONS Line
More informationPINNING - SOT93 PIN CONFIGURATION SYMBOL. tab
GENERAL DESCRIPTION QUICK REFERENCE DATA Dual, low leakage, platinum barrier, SYMBOL PARAMETER MAX. MAX. MAX. UNIT schottky rectifier diodes in a plastic envelope featuring low forward PBYR3-35PT 4PT 45PT
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
More informationTrenchMOS technology Very fast switching Logic level compatible Subminiature surface mount package.
M3D88 Rev. 2 2 November 21 Product data 1. Description in a plastic package using TrenchMOS 1 technology. Product availability: in SOT23. 2. Features TrenchMOS technology Very fast switching Logic level
More informationDiscontinued Product
Discontinued Product This device is no longer in production. The device should not be purchased for new design applications. Samples are no longer available. Date of status change: November 1, 21 Recommended
More informationPHT6N06T. 1. Product profile. 2. Pinning information. TrenchMOS standard level FET. 1.1 Description. 1.2 Features. 1.
M3D87 Rev. 2 3 February 23 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability: in SOT223.
More informationN-channel µtrenchmos ultra low level FET. Top view MBK090 SOT416 (SC-75)
M3D73 Rev. 3 March 24 Product data. Product profile. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology..2 Features Surface mounted package Low
More informationPHOTODARLINGTON OPTICAL INTERRUPTER SWITCH
HB HB HB3 PACKAGE DIMENSIONS 0.7 (.0) 0.57 (.6) C L 0.9 (6.35) 0.3 (6.5) D E C L 0.39 (.00) 0.3 (0.85).33 (3.38).073 (.85) 0.9 (3.3) 0.9 (3.0) 0.33 (.0) 0. (0.7) Optical C L 0.5 (3.) 0.9 (3.0).35 (8.00).95
More informationSMD version of BUK125-50L
DESCRIPTION QUICK REFERENCE DATA Monolithic logic level protected SYMBOL PARAMETER MAX. UNIT power MOSFET using TOPFET2 technology assembled in a 5 pin surface mounting plastic package. V DS I D Continuous
More informationPMV56XN. 1. Product profile. 2. Pinning information. µtrenchmos extremely low level FET. 1.1 Description. 1.2 Features. 1.
M3D88 Rev. 2 24 June 24 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features TrenchMOS technology
More informationDATA SHEET. BFQ225 NPN video transistor DISCRETE SEMICONDUCTORS Sep 04
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 1996 July 18 File under Discrete Semiconductors, SC5 1996 Sep 4 APPLICATIONS Primarily intended for cascode output and buffer stages in high resolution
More informationDATA SHEET. BFQ226 NPN video transistor DISCRETE SEMICONDUCTORS Sep 04
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 1996 July 18 File under Discrete Semiconductors, SC5 1996 Sep 4 APPLICATIONS Primarily intended for cascode output and buffer stages in high resolution
More informationTA7262P,TA7262P(LB),TA7262F
TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA7262P,TA7262P(LB),TA7262F DC MOTOR DRIVER (3 PHASE Bi DIRECTIONAL) The TA7262P / P (LB) / F are 3 Phase Bi Directional supply voltage control
More informationPMV40UN. 1. Product profile. 2. Pinning information. TrenchMOS ultra low level FET. 1.1 Description. 1.2 Features. 1.
M3D88 Rev. 1 5 August 23 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability: in SOT23.
More informationDATA SHEET. BSN304 N-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1997 Jun 17
DISCRETE SEMICONDUCTORS DATA SHEET age M3D6 Supersedes data of 997 Jun 7 2 Dec FEATURES PINNING - TO-92 variant Direct interface to C-MOS, TTL, etc. High-speed switching No secondary breakdown. APPLICATIONS
More informationHAL501...HAL506, HAL508 Hall Effect Sensor ICs MICRONAS INTERMETALL MICRONAS. Edition May 5, DS
MICRONAS INTERMETALL HAL1...HAL, HAL Hall Effect Sensor ICs Edition May, 1997 1--1DS MICRONAS HAL1...HAL HAL Hall Effect Sensor IC in CMOS technology Common Features: switching offset compensation at khz
More informationTrenchMOS ultra low level FET
M3D32 Rev. 1 27 September 22 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability: in SOT457 (TSOP6). 2.
More information2SC3074 2SC3074. High Current Switching Applications. Maximum Ratings (Ta = 25 C)
SC7 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) SC7 High Current Switching Applications Unit: mm Low collector saturation voltage: VCE (sat) =. V (max) (IC = A) High speed switching time:
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
More informationNPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.
Rev. 03 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device
More informationMP6901 MP6901. High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. Maximum Ratings (Ta = 25 C)
TOSHIBA Power Transistor Module Silicon Epitaxial Type (Darlington power transistor in ) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. Industrial Applications
More information