TOPFET high side switch

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1 DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MIN. UNIT overload protected power switch based on MOSFET technology in a I L Nominal load current (ISO) 9 A pin plastic envelope, configured as a single high side switch. APPLICATIONS SYMBOL PARAMETER MAX. UNIT V BG Continuous off-state supply voltage V General controller for driving L lamps, motors, solenoids, heaters. T j Continuous junction temperature 1 C R ON On-state resistance 38 mω I Continuous load current A FEATURES Vertical power DMOS switch Low on-state resistance V logic compatible input Overtemperature protection - self resets with hysteresis Overload protection against short circuit load with output current limiting; latched - reset by input High supply voltage load protection Supply undervoltage lock out Status indication for overload protection activated Diagnostic status indication of open circuit load Very low quiescent current Voltage clamping for turn off of inductive loads ESD protection on all pins Reverse battery and overvoltage protection FUNCTIONAL BLOCK DIAGRAM BATT STATUS POWER MOSFET INPUT CONTROL & PROTECTION CIRCUITS LOAD GROUND RG Fig.1. Elements of the TOPFET HSS with internal ground resistor. PINNING - SOT263 PIN CONFIGURATION SYMBOL PIN DESCRIPTION 1 Ground 2 Input 3 Battery (+ve supply) 4 Status Load tab connected to pin tab leadform Fig. 2. Fig. 3. I S B TOPFET HSS G L April Rev 1.

2 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Battery voltages V BG Continuous off-state supply voltage - V Reverse battery voltages 1 External resistors: -V BG Repetitive peak supply voltage R I = R S 4.7 kω, δ.1-32 V -V BG Continuous reverse supply voltage R I = R S 4.7 kω - 16 V I L Continuous load current T mb 1 C - A P D Total power dissipation T mb 2 C - 12 W T stg Storage temperature C T j Continuous junction temperature C T sold Lead temperature during soldering - 2 C Input and status I I Continuous input current - - ma I S Continuous status current - - ma I I Repetitive peak input current δ.1 - ma I S Repetitive peak status current δ.1 - ma Inductive load clamping E BL Non-repetitive clamping energy T mb = 1 C prior to turn-off J ESD LIMITING VALUE SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V C Electrostatic discharge capacitor Human body model; - 2 kv voltage C = 2 pf; R = 1. kω THERMAL CHARACTERISTICS Thermal resistance 3 R th j-mb Junction to mounting base K/W R th j-a Junction to ambient in free air K/W 1 Reverse battery voltage is allowed only with external input and status resistors to limit the currents to a safe value. 2 For normal continuous operation. A higher T j is allowed as an overload condition but at the threshold T j(to) the over temperature trip operates to protect the switch. 3 Of the output Power MOS transistor. April Rev 1.

3 STATIC CHARACTERISTICS T mb = 2 C unless otherwise stated Clamping voltages V BG Battery to ground I G = 1 ma 6 V V BL Battery to load I L = I G = 1 ma 6 V -V LG Negative load to ground I L = 1 ma V Supply voltage battery to ground V BG Operating range V Currents V BG = 13 V I L Nominal load current 2 V BL =. V; T mb = 8 C A I B Quiescent current 3 V IG = V; V LG = V µa I G Operating current 4 V IG = V; I L = A ma I L Off-state load current V BL = 13 V; V IG = V µa Resistances R ON On-state resistance 6 V BG = 13 V; I L = A; t p = µs mω R ON On-state resistance V BG = V; I L = 2 A; t p = µs mω R G Internal ground resistance I G = ma Ω INPUT CHARACTERISTICS T mb = 2 C; V BG = 13 V I I Input current V IG = V 3 6 µa V IG Input clamping voltage I I = µa V V IG(ON) Input turn-on threshold voltage V V IG(OFF) Input turn-off threshold voltage V 1 On-state resistance is increased if the supply voltage is less than 9 V. Refer to figure 8. 2 Defined as in ISO This is the continuous current drawn from the supply when the input is low and includes leakage current to the load. 4 This is the continuous current drawn from the supply with no load connected, but with the input high. The measured current is in the load pin only. 6 The supply and input voltage for the R ON tests are continuous. The specified pulse duration t p refers only to the applied load current. April Rev 1.

4 PROTECTION FUNCTIONS AND STATUS INDICATIONS Truth table for normal, open-circuit load and overload conditions and abnormal supply voltages. FUNCTIONS TRUTH TABLE THRESHOLD SYMBOL CONDITION INPUT STATUS OUTPUT MIN. TYP. MAX. UNIT Normal on-state Normal off-state 1 I L(OC) Open circuit load ma Open circuit load 1 T j(to) Over temperature C Over temperature 3 V BL(TO) Short circuit load V Short circuit load 1 V BG(TO) Low supply voltage X V V BG(LP) High supply voltage 6 X 1 4 V For input equals low, 1 equals high, X equals don t care. For status equals low, 1 equals open or high. For output switch equals off, 1 equals on. STATUS CHARACTERISTICS T mb = 2 C. The status output is an open drain transistor, and requires an external pull-up circuit to indicate a logic high. V SG Status clamping voltage I S = µa; V IG = V V V SG Status low voltage I S = µa; V BG = 13 V; V IG = V V I S Status leakage current V SG = V µa I S Status saturation current 7 V SS = V; R S = Ω; V BG = 13 V - - ma Application information R S External pull-up resistor 8 V SS = V - - kω 1 In the on-state, the switch detects whether the load current is less than the quoted open load threshold current. This is for status indication only. Typical hysteresis equals 2 ma. The thresholds are specified for supply voltage within the normal working range. 2 After cooling below the reset temperature the switch will resume normal operation. The reset temperature is lower than the trip temperature by typically C. 3 If the overtemperature protection has operated, status remains low to indicate the overtemperature condition even if the input is taken low, providing the device has not cooled below the reset temperature. 4 After short circuit protection has operated, the input voltage must be toggled low for the switch to resume normal operation. Undervoltage sensor causes the device to switch off. Typical hysteresis equals. V. 6 Overvoltage sensor causes the device to switch off. Typical hysteresis equals 1.3 V. 7 In a fault condition with the pull-up resistor short circuited while the status transistor is conducting. 8 The pull-up resistor also protects the status pin during reverse battery conditions. April Rev 1.

5 DYNAMIC CHARACTERISTICS T mb = 2 C; V BG = 13 V Inductive load turn-off -V LG Negative load voltage 1 V IG = V; I L = A; t p = µs 1 2 V Short circuit load protection 2 V IG = V; R L mω t d sc Response time µs I L Load current prior to turn-off t < t d sc - - A Overload protection 3 I L(lim) Load current limiting V BL = 9 V; t p = µs A SWITCHING CHARACTERISTICS T mb = 2 C, V BG = 13 V, for resistive load R L = 13 Ω. During turn-on to V IG = V t d on Delay time to % V L µs dv/dt on Rate of rise of load voltage V/µs t on Total switching time to 9% V L µs During turn-off to V IG = V t d off Delay time to 9% V L - - µs dv/dt off Rate of fall of load voltage V/µs t off Total switching time to % V L µs CAPACITANCES T mb = 2 C; f = 1 MHz; V IG = V C ig Input capacitance V BG = 13 V - 1 pf C bl Output capacitance V BL = V BG = 13 V - 7 pf C sg Status capacitance V SG = V pf 1 For a high side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load. This negative voltage is clamped by the device. 2 The load current is self-limited during the response time for short circuit load protection. Response time is measured from when input goes high. 3 If the load resistance is low, but not a complete short circuit, such that the on-state voltage remains less than V BL(TO), the device remains in current limiting until the overtemperature protection operates. April 199 Rev 1.

6 IL / A VBL 3 VBG / V = 13 VBG VIG VSG II IS RS I S IB B TOPFET HSS IG G L IL VLG LOAD Fig.4. High side switch measurements schematic. (current and voltage conventions) VBL / V Fig.7. Typical on-state characteristics, T j = 2 C. I L = f(v BL ); parameter V BG ; t p = 2 µs PD% Normalised Power Derating Tmb / C Fig.. Normalised limiting power dissipation. P D % = P D /P D (2 C) = f(t mb ) RON / mohm 1 VBG / V Fig.8. Typical on-state resistance, T j = 2 C. R ON = f(v BG ); conditions: I L = A; t p = µs IL / A 8 RON / mohm 7 6 VBG = V 13 V typ Tmb / C Fig.6. Limiting continuous on-state load current. I L = f(t mb ); conditions: V IG = V, V BG = 13 V Fig.9. Typical on-state resistance, t p = µs. R ON = f(t j ); parameter V BG ; condition I L = 2 A April Rev 1.

7 IG / ma ua IL 4 CLAMPING ua 3 OPERATING VIG = 3 V 1 ua 2 na HIGH VOLTAGE 1 na QUIESCENT VIG = V 6 VBG / V Fig.. Typical supply characteristics, 2 C. I G = f(v BG ); parameter V IG 1 na Fig.13. Typical off-state leakage current. I L = f(t j ); conditions: V BL = 13 V = V BG ; V IG = V. 3 IG / ma II / ua 2 VBG / V = 1 VBG / V = Fig.11. Typical operating supply current. I G = f(t j ); parameter V BG ; condition V IG = V VIG / V Fig.14. Typical input characteristics, T j = 2 C. I I = f(v IG ); parameter V BG ua IB II / ua ua ua na na Fig.12. Typical supply quiescent current. I B = f(t j ); condition V BG = 13 V, V IG = V, V LG = V VBG / V Fig.1. Typical input current, T j = 2 C. I I = f(v BG ); condition V IG = V April Rev 1.

8 3. VIG / V ua IS 2. 1 ua 2. VIG(ON) 1. VIG(OFF) na Fig.16. Typical input threshold voltages. V IG = f(t j ); conditions V BG = 13 V, I L = ma na Fig.19. Typical status leakage current. I S = f(t j ); conditions V SG = V, V IG = V BG = V 8. VIG / V IS / ua Fig.17. Typical input clamping voltage. V IG = f(t j ); conditions I I = µa, V BG = 13 V VSG / V Fig.. Typical status low characteristic, T j = 2 C. I S = f(v SG ); conditions V IG = V, V BG = 13 V, I L = A IS / ma 1 VSG / V VSG / V Fig.18. Typical status characteristic, T j = 2 C. I S = f(v SG ); conditions V IG = V BG = V Fig.21. Typical status low voltage, V SG = f(t j ). conditions I S = µa, V IG = V, V BG = 13 V, I L = A April Rev 1.

9 8. VSG / V 47 VBG(LP) / V 7. VIG / V = 46 off on Fig.22. Typical status clamping voltage, V SG = f(t j ). parameter V IG ; conditions I S = µa, V BG = 13 V Fig.2. Supply typical overvoltage thresholds. V BG(LP) = f(t j ); conditions V IG = V; I L = ma 1. IL(OC) / A 6 VBG / V.8 max..6.4 typ. 6 IG = 1 ma ua.2 min Fig.23. Low load current detection threshold. I L(OC) = f(t j ); conditions V IG = V; V BG = 13 V Fig.26. Typical battery to ground clamping voltage. V BG = f(t j ); parameter I G VBG(TO) / V IL / A on off Fig.24. Supply typical undervoltage thresholds. V BG(TO) = f(t j ); conditions V IG = 3 V; I L = ma VLG / V Fig.27. Typical negative load clamping characteristic. I L = f(v LG ); conditions V IG = V, t p = µs, 2 C April Rev 1.

10 - VLG / V IL / A -12 IL = ma A - - tp = us Fig.28. Typical negative load clamping voltage. V LG = f(t j ); parameter I L ; condition V IG = V VBL / V Fig.31. Typical reverse diode characteristic. I L = f(v BL ); conditions V IG = V, T j = 2 C 6 VBL / V nf Cbl 6 tp = us IL = 4 A 1 ma ua 1 nf Fig.29. Typical battery to load clamping voltage. V BL = f(t j ); parameter I L ; condition I G = ma. pf VBL / V Fig.32. Typical output capacitance. T mb = 2 C C bl = f(v BL ); conditions f = 1 MHz, V IG = V IG / ma 7 IL / A 6 VBL(TO) typ. current limiting - tp = us us i.e. before short circuit load trip VBG / V VBL / V Fig.. Typical reverse battery characteristic. I G = f(v BG ); conditions I L = A, T j = 2 C Fig.33. Typical overload characteristic, T mb = 2 C. I L = f(v BL ); condition V BG = 13 V; parameter t p April 199 Rev 1.

11 7 6 IL(LIM) / A Tmb / C Fig.34. Typical overload current, V BL = 9 V. I L = f(t mb ); conditions V BG = 13 V; t p = µs VBL(TO) / V Tmb / C Fig.36. Typical short circuit load threshold voltage. V BL(TO) = f(t mb ); condition V BG = 13 V 12 VBL(TO) / V Zth j-mb / (K/W) D = P D tp D = T tp 9 VBG / V Fig.3. Typical short circuit load threshold voltage. V BL(TO) = f(v BG ); condition T mb = 2 C T t.1 n 1u u u 1m m m 1 t / s Fig.37. Transient thermal impedance. Z th j-mb = f(t); parameter D = t p /T April Rev 1.

12 MECHANICAL DATA Dimensions in mm Net Mass: 2 g.3 max max 3. max not tinned 1.7 (4 x) M (1).6 min max (2).9 max ( x). (4 x) (1) mounting base 2.4 R. min min R. min max NOTES (1) positional accuracy of the terminals is controlled in this zone only. (2) terminal dimensions in this zone are uncontrolled. Note 1. Refer to mounting instructions for TO2 envelopes. 2. Epoxy meets UL94 V at 1/8". Fig.38. SOT263 leadform 263-1; pin 3 connected to mounting base. April Rev 1.

13 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. April Rev 1.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Important notice Dear Customer, On 7 February 217 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic