AO-A FOREIGN TECHNOLOGY.DIV WRIGHT-PATTERSON AFB 0ON F/G 13/7 MEMORY DEVICE U) MAR A2 N A PASHKIN, V N MALYUTIN UNCLASSIFIED FTD-ID(RS)T 0163
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1 AO-A FOREIGN TECHNOLOGY.DIV WRIGHT-PATTERSON AFB 0ON F/G 13/7 MEMORY DEVICE U) MAR A2 N A PASHKIN, V N MALYUTIN UNCLASSIFIED FTD-ID(RS)T NL MEEEEM
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3 FTD-ID(RS) FOREIGN TECHNOLOGY DIVISION IE1MORY DEVICE by N.A. Pashkin, V.N. Malyutih and V.V. Yefremov _u-- /,,-.: T I.C ' MAR Approved for public release; A distribution unlimited AU
4 FTD-ID( RS)T EDITED TR4KSLATION FTD-ID(RS)T March 1982 ICROFICfE NR: FTD-82-C MEMORY DEVICE By: N.A. Pashkin, V.N. Malyutin and V.V. Yefremov English pages: 2 Source: USSR Patent Nr , 16 May 1967, pp. 1-2 Country of origin: USSR Translated by: Victor Mesenzeff Requester: USAMICOM Approved for public release; distribution unlimited. THIS TRANSLATION IS A RENDITION OF THE ORIGI. NAL FOREIGN TEXT WITHOUT ANY ANALYTICAL OR EDITORIAL COMMENT. STATEMENTS OR THEORIES PREPARED BY: ADVOCATEDOR IMPLIED ARE THOSE OF THE SOURCE ANDDO NOT NECESSARILY REFLECT THE POSITION TRANSLATION DIVISION OR OPINION OF THE FOREIGN TECHNOLOGY DI. FOREIGN TECHNOLOGY DIVISION VISION. WP.AFB, OHIO. FTD-ID(RS)T Date 3 Mar 19 82
5 U. S. BOARD ON GEOGRAPHIC NAMES TRANSLITERATION SYSTEM Blcck Italic Transliteration Block Italic Transliteratic:. A a A a A, a P p p p R, r L b S6 B, b Cc C S, s E 8 B e V, v T T Tm T, t rr r a G, g Yy y y U, u 0 D, d 0 * F, f E e E a Ye, ye; E, e* X x X x Kh, kh m Zh, zh t U y a Ts, ts j Z, z H '4 Ch, ch H u I, i W W wm Sh, sh R 0 Y, y 1 U4 Xii m Shch, shch IC x K, k b -6 7 A L, 1 hi W m u Y, y M m M, m b b b H H H m N, n 3 - a E, e , o Q 10 to Yu, yu n n 17 m P, p p 0 x a Ya, ya *ye initially, after vowels, and after b, 6; e elsewhere. When written as 9 in Russian, transliterate as y4 or 9. RUSSIAN AND ENGLISH TRIGONOMETRIC FUNCTIONS Russian English Russian English Russian English sin sin sh sinh arc sh sinh_ COS Cos ch cosh arc ch o._ tg tan th tanh arc th ctg cot cth coth arc cth sec sec sch sech arc sch sec, cosec csc csch csch arc csch csch - Russian rot lg English curl log i% I'L
6 MEMORY DEVICE N. A. Pashkin, V. N. Malyutin and V. V. Yefremov There are memory devices built of the elements of pneumoautomatics. The memory device being proposed is based on the change in resistance to the jet flowing from a nozzle, and is different from the existing devices in that to ensure the possibility of an immediate rewrite of information and its long-term storage with a zero expenditure of compressed gas, its carrier of information is made in the form of a film or a layer of an elastic material (for example, rubber) with cone-shaped projections and is located between the pusher of the recording mechanism and the read nozzle, which serves also as the erasure mechanism. The structural scheme of the device is shown by the drawing. It contains the information carrier 1 with cone-shaped projections, pusher 2 of the recording mechanism, recoil spring 3, read nozzle 4, recoil spring 5, pushing component 6 of the erasure mechanism, flexible element 7 of a pneumatic drive to the nozzle, and guide rack 8. The information carrier is made in the form of a film or a layer of an elastic material (for, example, rubber) with cone-shaped projections, which are pushed out during the recording (erasing) of information by means of the pushers from different sides of the carrier and, depending on the position, they either close or leave the input of the read nozzle open during the read mode. In order to ensure an immediate check and rewrite of information, 1- t~ C.. -,
7 isher of the recording mechanism and the read nozzle of each of ts are on the same axis; in this case, the latter serves simulta- Ly as the pusher of the erasure mechanism. Claims ie memory device for the pneumatic-automatics systems, which cona carrier of information, a mechanism for its displacement, and iisms for recording, erasing, reading of information, is different at to ensure the possibility of an immediate rewrite of information Ls long-term storage with a zero expenditure of compressed gas, nformation carrier is made in the form of a film or a layer of an ic material (for example, rubber) with cone-like projections and ranged between the pusher of the recording mechanism and the read e, which also is the pusher of the erasure mechanism. A/a, A-A "t '4 " 2 2
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