arxiv: v1 [cond-mat.supr-con] 9 Feb 2018

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1 Highly reproduible superondutivity in potssium-doped triphenylbismuth rxiv: v1 [ond-mt.supr-on] 9 Feb 2018 Ren-Shu Wng, 1, 2 Ji Cheng, 1 Xio-Lin Wu, 1 Hui Yng, 1 Xio-Ji Chen, 2, Yun Go, 1, nd Zhong-Bing Hung 1, 1 Shool of Mterils Siene nd Engineering, Fulty of Physis nd Eletroni Tehnology, Hubei University, Wuhn , Chin 2 Center for High Pressure Siene nd Tehnology Advned Reserh, Shnghi , Chin (Dted: Februry 12, 2018) Using new two-step synthesis method - ultrsound tretment nd low temperture nneling, we explore superondutivity in potssium-doped triphenylbismuth, whih is omposed of one bismuth tom nd three phenyl rings. The ombintion of d nd mgneti mesurements revels tht one hundred perent of synthesized smples exhibit superondutivity t 3.5 K nd/or 7.2 K t mbient pressure. The mgnetiztion hysteresis loops provide strong evidene of type-ii superondutor, with the upper ritil mgneti field up to 1.0 Tesl. Both lulted eletroni struture nd mesured Rmn spetr indite tht superondutivity is relized by trnsferring eletron from potssium to rbon tom. Our study opens n enourging window for the serh of orgni superondutors in orgnometlli moleules. PACS number(s):74.70.kn, q, Jw Introdution Superondutivity in orgni mterils hs been ttrting gret ttention due to its fundmentl importne nd potentil pplition prospet. Following the disovery of superondutivity in (TMTSF) 2 PF 6 in 1980 [1], severl orgni superonduting (SC) fmilies hve been reported inluding hrge trnsfer omplexes [2], fullerides [3], nd grphites [4, 5]. In 2010, potssium doped piene ws shown to disply SC trnsition temperture T s high s 18 K [6], whih provides pltform to explore superondutivity in orgni hydrorbons. Soon therefter, potssium doped phennthrene [7] nd dibenzopentene [8] were found to exhibit superondutivity t 5 K nd 33 K, respetively. The bove three moleules belong to fused hydrorbons, in whih five, three, nd seven phenyl rings re fused vi shring sides. Very reently, we found tht by doping potssium into p-terphenyl, hydrorbon formed by onneting three phenyl rings with C-C bond, SC trnsitions n be observed t 123 K, 43 K, nd 7.2 K [9]. The observtion of distint T in these hydrorbons suggests tht both the number nd onneting pttern of phenyl rings ply importnt roles in the SC property. Despite tremendous efforts by the sientifi ommunity [10 15], the detiled rystl strutures of hydrorbon superondutors hve not yet been determined in experiments so fr, due to low reproduibility of SC smples nd vnishingly smll SC frtion. This ples serious restrition on deep understnding of their physil properties. To mke progress on hydrorbon superondutors, we develop two-step synthesis method - ultrsound tretment nd low temperture nneling to explore superondutivity in potssium-doped triphenylbismuth. As member of orgnometlli moleules [16], triphenylbismuth hs been used s the solidifying tlyst for butyl hydroxyl propellnt of high ombustion veloity, s well s the tlyst for some monomers polymeriztion [17]. In eh triphenylbismuth moleule, three phenyl rings nd one bismuth tom re onneted by single C-Bi bond. Suh n rrngement of phenyl rings is distint from the ones in fullerides [3], grphites [4, 5], fused hydrorbons [6 8], nd p-terphenyl [9]. In view of these fts, explortion of superondutivity in potssium-doped triphenylbismuth not only enrihes the funtionlities of orgnometlli ompounds but lso provides new pltform for understnding the reltionship between SC property nd moleulr struture. Potssium-doped triphenylbismuth ws synthesized by the following steps. High-purity potssium metl (99% purity, Sinophrm Chemil Regent) ws ut into smll piees nd mixed with triphenylbismuth (>98% purity, Tokyo Chemil Industry) with mole rtio of x : 1 (x=1, 2, 2.5, 3 nd 3.5). The mixtures were then loded into qurtz tubes nd seled under high vuum ( P). The smple tubes were treted in n ultrsound devie t 90 o C for 10 hours. After ultrsound tretment, the smples tubes were heted t 130 o C for 1-5 dys. Here, ultrsound tretment ws dopted to mix potssium nd triphenylbismuth thoroughly, nd low temperture nneling n void produing KH vi retion of potssium nd hydrogen, whih is ruil for rystlliztion of doped mterils. For eh run of experiment, the smple from the sme tube ws distributed into severl nonmgneti psules nd seled by GE vrnish in glove box with the oxygen nd moisture levels less thn 0.1 ppm. Mgneti property of potssium-doped triphenylbismuth Superondutivity ws reveled by both the d nd mgneti mesurements performed on our smples with SQUID mgnetometer (Quntum Design MPMS3). Pristine triphenylbismuth exhibits wek dimgneti behvior, whih is lerly hrterized by the smll negtive mgneti suseptibility in the temperture rnge of K. Upon doping potssium into triphenylbismuth, ll synthesized smples listed in Tble I exhibit SC trnsition temperture of 3.5 K, nd four smples lso show trnsition t 7.2 K. The representtive results for smples D (x=3, nneled for 3 dys) nd E (x=2, nneled for 5 dys) re summrized in Fig. 1. Figure 1 shows the d mgneti suseptibility χ for smple D in the pplied mgneti field of 10 Oe with field ooling (FC) nd zero-field ooling (ZFC) in the temperture rnge of K. Both FC nd ZFC suseptibilities show sudden derese round 3.5 K. Suh sudden drop of χ is onsistent with the well-defined Meissner effet, supporting the ourrene of superondutivity in smple D. The shielding volume frtion t 1.8 K is estimted to be bout 1.7%, nd lrger vl-

2 2 (10-3 emu g -1 Oe -1 ) (10-4 emu g -1 Oe -1 ) FC H=10 Oe K 2.5 K 3 K -1.2 ZFC H (T) FC H=10 Oe M (10-2 emu g -1 ) T=1.8 K b ZFC H (Oe) Temperture (K) M (10-3 emu g -1 ) (10-4 emu g -1 Oe -1 ) (10-3 emu g -1 Oe -1 ) d H 2 (Oe) T (K) (10-5 emu g -1 Oe -1 ) 3000 Oe 2000 Oe 1000 Oe 750 Oe 500 Oe 400 Oe 300 Oe 200 Oe 100 Oe 80 Oe 60 Oe 40 Oe 20 Oe 10 Oe 10 Oe 20 Oe 50 Oe 100 Oe 300 Oe 500 Oe Oe T (K) Temperture (K) '' (. u.) ' (. u.) e Smple D Smple E T onset H =5 Oe, f = 234 Hz f Temperture (K) FIG. 1. (Color online), b, The temperture dependene of the d mgneti suseptibility χ for smples D nd E in the pplied mgneti field of 10 Oe with field ooling (FC) nd zero-field ooling (ZFC). The inset figures show the mgnetiztion loops of smples D nd E, with mesured temperture shown beside the orresponding loop., d, The temperture dependene of χ for smples D nd E mesured t vrious mgneti fields in the ZFC run. The inset figure in shows the upper ritil mgneti field H 2 in the temperture region of K. The inset figure in d displys the trnsition round 7.2 K with enlrged sle. e, f, Imginryχ nd relχ omponents of the mgneti suseptibility s funtion of temperture. The probe hrmoni mgneti field nd frequeny re 5 Oe nd 234 Hz, respetively. TABLE I. List of K x triphenylbismuth smples synthesized in this study. Both T onset nd T were red out from the ZFC run mesured in the pplied mgneti field of 10 Oe. The former denotes the temperture where the mgneti suseptibility turns to suddenly derese with lowering the temperture, nd the ltter is determined from the interept of liner extrpoltions from below nd bove T onset. Smple lbel x Anneling time (dys) T onset A B C & & 7.19 D E & & 7.13 F G & & 7.06 H & & 7.13 ues re expeted with further lowering the temperture sine χ does not sturte t 1.8 K. Similrly, sudden drops ofχround 3.5 nd 7.2 K indite tht there exist two SC phses in smple E (Fig. 1b). Notie tht the drop t 7.2 K is muh weker thn the one t 3.5 K, implying tht smple E is dominted by the SC phse with T 3.5 K. T The inset of Fig. 1 shows the mgnetiztion loops of smple D with mgneti field up to 1.0 T mesured t 2, 2.5, nd 3 K in the SC stte. The hysteresis loops long the two opposite mgneti field diretions show ler dimond-like shpe, providing strong evidene for the type-ii superondutor. One n redily see tht the dip or pek of the mgnetiztion loops ppers t mgneti field lose to 0 T, inditing very smll lower ritil mgneti field H 1 for the SC phse t 3.5 K. The expnsion of the dimond from 3 K to 2 K reflets the ft tht the upper ritil mgneti field H 2 inreses with lowering the temperture. The type-ii SC behvior is lso pplied for smple E, s seen from the mgnetiztion loop with mgneti field up to 1000 Oe mesured t 1.8 K in the inset of Fig. 1b. One signifint differene from the mgnetiztion loops of smple D is tht the dimond shpe is strongly distorted, due to the oexistene of two SC phses in smple E. The obtined superondutivity in potssium-doped triphenylbismuth ws lso supported by the evolution of the χ- T urve with the pplied mgneti fields (Fig. 1, Fig. 1d nd the inset of Fig. 1d). Theχ-T urve grdully shifts towrds the lower tempertures with inresing mgneti field. This hrter is onsistent with the intrinsi property of superondutor, i.e., the SC trnsition temperture T is grdully deresed with inresing mgneti field. In the inset of Fig. 1, we show the temperture dependene of the upper ritil mgneti field H 2 for smple D in the temperture region of K. Here, H 2 is determined from theχ-t urves mesured t vrious mgneti fields. A drmti inrese of

3 3 Intensity (. u.) K 1 K 2 K 3 Clulted (111) (311) (222) (004) (313) Two thet (degree) FIG. 2. (Color online) XRD ptterns of pristine nd potssium-doped triphenylbismuth mesured t room temperture. In figures 2 nd 5,, K 1, K 2, nd K 3 orrespond to pristine triphenylbismuth, smples B, E, nd D, respetively. The symbol represents the ommon XRD pttern for the three smples, nd the symbol stnds for the solitry XRD pttern for smple E. The purple urve t the bottom represents the lulted XRD pttern of optimized struture in Fig. 3b. H 2 with lowering the temperture is lerly evidened in the investigted temperture region. The mgneti suseptibility mesurements were dopted to mke further onfirmtion for the observed superondutivity. This tehnique hs been suessfully used to study numerous superondutors inluding high-t uprtes [18], hevy-fermion mteril CeCu 2 Si 2 [19], nd iron-bsed FeSe 1 x [20]. The rel omponentχ of the suseptibility is mesure of the mgneti shielding nd the imginry omponentχ reflets the mgneti irreversibility [18]. Figures 1e nd 1f present the temperture dependene ofχ nd χ of the ZFC suseptibility, respetively. For smple D (blue lines), two infletion nomlies our in theχ -T nd χ -T urves upon ooling t the extly sme temperture of 3.5 K, whih oinides with the T vlue lredy determined from Fig. 1. As n be seen, bothχ ndχ re lose to zero bove the trnsition due to the bsene of flux exlusion in the norml stte. Upon entering the SC stte below 3.5 K, the dimgneti behvior leds to negtiveχ whih beomes more negtive s more flux is expelled from the smple with lowering the temperture. Here, finiteχ reflets the ft tht the flux penetrting the smple lgs the externl flux. Similr infletion nomlies re lso observed for smple E (red lines) round 3.5 K. However, onlyχ exhibits n nomly for the SC trnsition t 7.2 K nd no visible hnge n be found for χ. This is ttributed to the smll frtion of the 7.2 K SC phse. Crystl strutures of pristine nd potssium-doped triphenylbismuth X-ry diffrtion (XRD) spetrometer (115) (Pnlytil Emperen) ws employed to exmine the evolution of the rystl struture from pristine to potssium-doped triphenylbismuth. Figure 2 displys the XRD ptterns of pristine nd potssium-doped smples with mole rtio x=1, 2, nd 3. The pek positions for the pristine mteril re in good greement with the ones in the stndrd PDF rd. Pristine triphenylbismuth is typil kind of moleulr solid nd rystllizes in the spe group C2/ (No. 15), with eight moleules of C 18 H 15 Bi in unit ell of dimensions =27.70 Å, b=5.82 Å, =20.45 Å, ndβ= o [21, 22], s shown in Fig. 3. The men Bi-C distne is 2.24 Å nd the men C-Bi-C bond ngle is bout 94 o. Upon doping potssium, no obvious pek ppers t the positions where the pristine mteril shows strong peks nd the XRD feture is ompletely different from the undoped se. This indites tht doping of potssium toms produes new rystl struture. Notie tht the smples with different x s exhibit ommon XRD pttern mrked by, while the smple with x=2 lso shows solitry pttern mrked by, whih is tully onsistent with the XRD pttern of metl Bi. The existene of Bi in smple E is evidened by the pperne of olorless nd trnsprent liquid on the inner wll of tube, inditing tht prtil triphenylbismuth moleules re deomposed into Bi toms nd phenyls. Given tht ll the three smples exhibit superondutivity round 3.5 K, it is resonble to sribe the 3.5 K SC phse to the rystl struture represented by. As to the 7.2 K SC phse observed in smple E, its very smll frtion mkes it hrd to disern the orresponding rystlliztion informtion from the XRD results. To identify the omplited rystl struture for the 3.5 K SC phse, we first employed the Universl Struture Preditor: Evolutionry Xtllogrphy (USPEX) bsed on the geneti lgorithm [23] to serh for globl stble or metstble strutures in the phse digrm of K y Bi with y=1-4, whih orrespond to the possible rrngement of potssium nd bismuth toms in the doped mterils. In the serh proess, the plne-wve pseudopotentil method s implemented in the Vienn b initio simultion pkge (VASP) progrm [24, 25] ws dopted to relx the tomi positions. The generlized grdient pproximtion (GGA) with Perdew-Burke-Ernzerhof (PBE) formul [26] for the exhnge-orreltion potentils nd the projetor-ugmented wve method (PAW) [27] for ioni potentil were used to model the eletron-eletron nd eletron-ion intertions. The serhed results indite tht one ubi struture of K 4 Bi ould reflet the min hrter of mesured XRD pttern. Then we reple bismuth tom with triphenylbismuth in this struture nd perform full relxtion of tomi positions. The optimized rystl hs three moleules of C 18 H 15 Bi nd twelve K toms in unit ell of dimensions =b==9.473 Å, ndα=β=γ=90 o, s shown in Fig. 3b. Potssium toms represented by blue blls in Fig. 3b re interlted in the interstitil spe of bismuth nd phenyl rings, with deep blue one lose to ertin phenyl ring nd light blue one oupying the enter of green dshed line onneting two bismuth toms. The powder XRD pttern bsed

4 4 () b Intensity (. u.) Lttie C-C-C Bending C-H Bending C-C Strething C-H Strething K 1 K 2 (b) b FIG. 3. (Color online) () The moleulr rrngement in pristine triphenylbismuth is shown in single ell; (b) The rrngement of moleules nd potssium in doped mteril is shown in superell. The grey, purple, nd blue blls represent rbon, bismuth, nd potssium toms, respetively. The hydrogen toms re not given in the figure for lrity. PDOS (Sttes/eV) C-2s C-2p K-4s Bi-6s Bi-5p Energy (ev) FIG. 4. (Color online) Orbitl-resolved prtil density of sttes (PDOS) s funtion of energy. The Fermi energy is set to be zero. The red, blue, blk, green, nd purple solid lines represent PDOS of C-2p, C-2s, K-4s, Bi-6s, nd Bi-5p orbitls, respetively. on the optimized rystl, shown t the bottom of Fig. 2, is in good greement with the one mrked by. This indites tht the doped mterils rystllize into the optimized ubi struture with high probbility. The missing of wek peks in K x (x=1-3) ompred with the theoretil modeling is mostly possible due to poor rystlliztion, mnifested by brod XRD peks in Fig. 2. The orbitl-resolved prtil density of sttes (PDOS) for the optimized rystl re presented in Fig. 4. The existene of fi- K Rmn Shift (m -1 ) FIG. 5. (Color online) Rmn sttering spetr of pristine nd potssium-doped triphenylbismuth olleted t room temperture. Upper right presents the moleulr struture of triphenylbismuth. Five regions of Rmn tive modes, divided by the vertil dshed lines, re shown bove the spetr of pristine mteril. nite PDOS t the Fermi energy indites tht the potssiumdoped system tully lies in the metlli stte, providing support for the observtion of superondutivity t 3.5 K. Among the five orbitl shown in Fig. 4, the C-2p orbitl mkes dominnt ontribution to PDOS in the viinity of the Fermi energy, while the K-4s orbitl hs little ontribution. This result reflets the ft tht the eletron is trnsferred from K-4s to C-2p, whih not only leds to the metlli behvior but lso strongly ffets the vibrtions of phenyl rings. Rmn spetr of pristine nd potssium-doped triphenylbismuth The SC phse ws further hrterized by phse-sensitive Rmn spetr, whih were olleted on n in-house system with Chrge Coupled Devie nd Spetrometer from Prineton Instruments. Five regions of Rmn tive modes from the low to high frequenies orrespond to the lttie nd Bi-phenyl, C-C-C bending, C-H bending, C-C strething, nd C-H strething modes [28]. We observed ll these modes in pristine triphenylbismuth. Upon doping potssium into triphenylbismuth, ll lttie modes re drmtilly suppressed nd the modes in the C-H strething region beome invisible (see Figure 5). Signifint differenes of the spetr between the pristine nd doped smples re in the C-H bending nd C-C strething regions. Upon doping potssium, the 644 nd 993 m 1 C-H bending modes in the pristine mteril shift down with drmti derese in the intensity. By ontrst, the C-H bending modes t 1154 nd 1182 m 1 shift up with n inrese in the intensity. It is obvious tht the mode intensity in the whole C-C strething region gets strong enhnement in the doped smples. An upshift of Rmn spetr is lso observed for the two peks t 1322 nd 1564 m 1 in the pristine mteril, while the pek t 1469 m 1 does not shift its position with the potssium doping. The observtion of both red nd blue shifts of Rmn

5 5 spetr in potssium-doped triphenylbismuth is quite different from the sitution in potssium-doped phennthrene [7] nd piene [10], where only red shifts were observed. Suh red shifts were ttributed to the softening of Rmn modes by the trnsferred eletrons from potssium to phennthrene nd piene moleules. This mehnism should lso work for triphenylbismuth, mking the Rmn modes tend to shift down. On the other hnd, when phenyl is onneted to n X (either metl [29] or hlogen [30]) tom, both the C-H nd C-C modes re ffeted by the C-X bond. In the hlogenobenzenes [30], the frequenies of the C-C strething modes inrese from I-benzene to F-benzene, suggesting tht n inrese of benzene polriztion with inresing the eletronegtivity of hlogen tom mkes the Rmn modes tend to shift up. Bsed on the bove nlyses, the Rmn shifts in our smples ould be understood s the ompeting results between trnsferred eletrons nd enhned polriztion of phenyls, whih is lerly mnifested by the symmetri Rmn line shpe nd the inrese of Rmn intensity in the C-C strething region. Conlusion The present results provide unmbiguous evidene for highly reproduible superondutivity in potssiumdoped triphenylbismuth. The existene of 3.5 K nd 7.2 K SC trnsitions indites tht two stble rystl strutures n be formed upon doping potssium into triphenylbismuth. Similr SC trnsitions round 7.2 K were lso observed in potssiumdoped piene [6], dibenzopentene [8], nd p-terphenyl [9]. The insensitivity of T to the detils of moleules suggests tht the SC phse round 7.2 K rests minly on the ommon struturl unit - phenyl ring. On the other hnd, the findings of SC phses with muh higher T s (18 K in piene [6], 33 K in dibenzopentene [8], nd bove 120 K in p-terphenyl [9]) indite tht the rrngement of phenyl rings plys ruil role in boosting superondutivity. The unique feture of triphenylbismuth-like orgnometlli moleules is the presene of metl tom onneting phenyl rings. Sine the struture of suh systems depends sensitively on the metl tom, finding mterils with different T s is expeted, whih provides bottom-up understnding of the SC mehnism in the phenyl-ring-bsed orgni superondutors. R.S.W. nd J.C. ontribute eqully to this work. We thnk Hi-Qing Lin for strong support nd vluble disussion. This work ws supported by the Ntionl Nturl Siene Foundtion of Chin under Grnts Nos , , nd xjhen@hpstr..n goyun@hubu.edu.n hungzb@hubu.edu.n [1] D. Jérome, A. Mzud, M. Ribult, nd K. Behgrd, J. Phys. Lett. 41, L95-98 (1980). [2] T. Ishiguro, K. Ymji, nd G. Sito, Orgni Superondutors (2nd edition, Springer-Verlg, 1997). [3] A. F. Hebrd, M. J. Rosseinsky, R. C. Hddon, D. W. Murphy, S. H. Glrum, T. T. M. Plstr, A. P. Rmirez, nd A. R. Kortn, Nture 350, (1991). [4] N. Emery, C. Hérold, M. d Astuto, V. Gri, Ch. Bellin, J. F. Mrehe, P. Lgrnge, nd G. Loupis, Phys. Rev. Lett. 95, (2005). [5] J. S. Kim, L. Boeri, J. R. O Brien, F. S. Rzvi, nd R. K. Kremer, Phys. Rev. Lett. 99, (2007). [6] R. Mitsuhshi, Y. Suzuki, Y. Ymnri, H. Mitmur, T. Kmbe, N. Iked, H. Okmoto, A. Fujiwr, M. Ymji, N. Kwski, Y. Mniw, nd Y. Kubozono, Nture 464, (2010). [7] X. F. Wng, R. H. Liu, Z. Gui, Y. L. Xie, Y. J. Yn, J. J. Ying, X. G. Luo, nd X. H. Chen, Nture Commun. 2, (2011). [8] M. Xue, T. Co, D. Wng, Y. Wu, H. Yng, X. Dong, J. He, F. Li, nd G. F. Chen, Si. Rep. 2, 389 (2012). [9] R. S. Wng, Y. Go, Z. B. Hung, nd X. J. Chen, rxiv: , rxiv: , rxiv: (2017). [10] T. Kmbe, X. He, Y. Tkhshi, Y. Ymnri, K. Ternishi, H. Mitmur, S. Shibski, K. Tomit, R. Eguhi, H. Goto, Y. Tkbyshi, T. Kto, A. Fujiwr, T. Kriydo, H. Aoki, nd Y. Kubozono, Phys. Rev. B 86, (2012). [11] A. Ruff, M. Sing, R. Clessen, H. Lee, M. Tomić, H. O. Jeshke, nd R. Vlentí, Phys. Rev. Lett. 110, (2013). [12] S. Heguri, Q. Thi Nhu Phn, Y. Tnbe, nd K. Tnigki, Phys. Rev. B 90, (2014). [13] G. A. Artioli, F. Hmmerth, M. C. Mozzti, P. Crrett, F. Corn, B. Mnnui, S. Mrgdonn, nd L. Mlvsi, Chem. Commun. 51, 1092 (2015). [14] S. Heguri, M. Kobyshi, nd K. Tnigki, Phys. Rev. B 92, (2015). [15] Y. Go, R. S. Wng, X. L. Wu, J. Cheng, T. G. Deng, X. W. Yn, nd Z. B. Hung, At. Phys. Sin. 65, (2016). [16] C. Elshenbroih, Orgnometllis (3rd edition, Weinheim: Wiley-VCH-Verl., 2006). [17] M. Dötterl nd H. G. Alt, Chemthem 4, (2012). [18] F. Gömöry, Superond. Si. Tehnol. 10, (1997). [19] E. Lengyel, M. Nikls, H. S. Jeevn, C. Geibel, nd F. Steglih, Phys. Rev. Lett. 107, (2011). [20] M. Bendele, A. Amto, K. Conder, M. Elender, H. Keller, H.- H. Kluss, H. Luetkens, E. Pomjkushin, A. Rselli, nd R. Khsnov, Phys. Rev. Lett. 104, (2010). [21] D. M. Hwley nd G. Ferguson, J. Chem. So. (A) (1968). [22] P. G. Jones, A. Blshette, D. Henshel, nd A. Weitze, Zeitshrift für Kristllogrphie 210, (1995). [23] C. W. Glss, A. R. Ognov, nd N. Hnsen, Comp. Phys. Comm. 175, (2006). [24] G. Kresse nd J. Hfner, Phys. Rev. B 47, (1993). [25] G. Kresse nd J. Furthmüller, Phys. Rev. B 54, (1996). [26] J. P. Perdew, K. Burke, nd M. Ernzerhof, Phys. Rev. Lett. 77, (1996). [27] P. E. Blöhl, Phys. Rev. B 50, (1994). [28] C. Ludwig nd H.-J. Götze, Spetrohimi At Prt A 51, (1995). [29] K. Shobtke, C. Postmus, J. R. Ferrro, nd K. Nkmoto, Applied Spetrosopy 23, (1969). [30] D. H. Whiffen, J. Chem. So (1956).