Light generation and control in SOI Photonic crystals
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1 TF Krauss, WavePro No.1/32 Light generation and control in SOI Photonic crystals Thomas F Krauss University of, School of Physics and Astronomy,, UK Liam O'Faolain, Abdul Shakoor, Karl Welna Christelle Monat, Bill Corcoran, Ben Eggleton, CUDOS Matteo Galli, Dario Gerace, Simone Portalupi, Lucio Claudio Andreani, Pavia Francesco Priolo, Giorgia Franzo, Catania
2 TF Krauss, WavePro No.2/32 How grey silicon can help you generate new colours
3 1. SOI Photonic crystals TF Krauss, WavePro No.3/ nm Si waveguide, airbridge or oxide clad
4 Mechanism! TF Krauss, WavePro No.4/32 a! In the slow light regime, one can imagine the mode taking a longer route - that s why it takes more time, and why there is more light inside the structure.! Cavities can be understood as waveguides with their ends plugged up.!
5 Nonlinear wavelength conversion TF Krauss, WavePro No.5/32
6 Third harmonic generation TF Krauss, WavePro No.6/32 I " = P " A # n g n eff C. Monat et al., Nature Photonics, April 2009
7 Signal/Noise Monitoring - Concept TF Krauss, WavePro No.7/32 B. Corcoran et al., Optical signal processing on a silicon chip at 640Gb/s using slow-light, Optics Express 18, 7770 (2010)
8 Bandwidth TF Krauss, WavePro No.8/ Gbit/s -> 500fs pulses B. Corcoran et al., Optical signal processing on a silicon chip at 640Gb/s using slow-light, Optics Express 18, 7770 (2010)
9 TF Krauss, WavePro No.9/32 2. New colours from cavities
10 High Q cavity TF Krauss, WavePro No.10/32 Real space Q!45 k Fourier space Light cone High Q (low loss) comes from lack of radiation within escape cone/ light cone. S. Noda et al., Nature 425, p.944 (2003)
11 Farfield TF Krauss, WavePro No.11/32 High Q (low loss) comes from lack of radiation within the light cone. But where does the cavity emission actually go? 0 k
12 Solution: Secondary grating TF Krauss, WavePro No.12/32
13 Solution: Secondary grating TF Krauss, WavePro No.13/32 S. L. Portalupi et al., Optics Express July 2010
14 Solution: Secondary grating TF Krauss, WavePro No.14/32 a 2a "!/a!!/a!!/a! k 2!/a! 2!/2a!
15 TF Krauss, WavePro No.15/32 S. L. Portalupi et al., Optics Express July 2010
16 Harmonic Generation TF Krauss, WavePro No.16/32 Nonlinear effects (here: Second and third harmonic generation) observed due to high intensity buildup and far-field engineering M Galli et al. Optics Express, December 2010
17 SHG surface effect TF Krauss, WavePro No.17/32 E x Nearfield Experiment Farfield Model Farfield
18 THG bulk effect TF Krauss, WavePro No.18/32 E y Nearfield Experiment Farfield Model Farfield
19 THG and SHG in Si cavities TF Krauss, WavePro No.19/32 M Galli et al. Optics Express, December 2010
20 Output power TF Krauss, WavePro No.20/32 Output power is absolutely useless for photonics (Referee NPhot) M Galli et al. Optics Express, December 2010
21 TF Krauss, WavePro No.21/32
22 THG emission vs. Nanolaser TF Krauss, WavePro No.22/32! 100 "W
23 TF Krauss, WavePro No.23/32
24 TF Krauss, WavePro No.24/32 3. Silicon (linear) light emission?
25 Defect emission from A Centres TF Krauss, WavePro No.25/32 Nature Materials 2005 Bandedge A-Centre A-Centre A-type trapping centres.attributed to silicon vacancies (10K)
26 Defect emission from Hydrogen implants TF Krauss, WavePro No.26/32 Room-temperature emission at telecom wavelengths from silicon photonic crystal nanocavities R. Lo Savio et al., accepted for publication in Appl. Phys. Lett.
27 TF Krauss, WavePro No.27/32 E. M. Purcell, Phys. Rev. 69, 37 (1946). Nature News & Views, 1997 f = 3"3 Q P 4# 2 V! rad = " nonrad " rad +" nonrad
28 TF Krauss, WavePro No.28/32! rad = " nonrad " rad +" nonrad The Purcell-factor makes defect emission Roomtemperatureable
29 Further improvements? TF Krauss, WavePro No.29/32 Surface defects (Plasma process) Bulk defects (SOITEC process)
30 TF Krauss, WavePro No.30/32
31 TF Krauss, WavePro No.31/32 1 pw 3000 x SOI!
32 Conclusion TF Krauss, WavePro No.32/32
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