A Study of the Secondary Electron Yield of Insulator Cathodes for Plasma Display Panels
|
|
- Sherman Johnston
- 6 years ago
- Views:
Transcription
1 1568 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 48, NO. 8, AUGUST 2001 A Study of the Secondary Electron Yield of Insulator Cathodes for Plasma Display Panels Yasushi Motoyama, Hideomi Matsuzaki, and Hiroshi Murakami Abstract In order to provide a guideline in the search for the optimum cathode materials for plasma display panels (PDPs), formulas for the simple calculation of the secondary electron yield were derived from Hagstrum s theory for an insulator without impurity levels. From these, we obtained the generalized relations between and the band parameters of an insulator and the potential energy of an incident particle, which is an ion or a metastable atom. Unlike metals, it is not work function but the sum of band gap and electron affinity that essentially contributes to of an insulator. By applying these formulas, the values of BaO and MgO for He, Ne, Ar, Kr, and Xe ions and metastable atoms were practically calculated. In particular, the metastable atom-induced values of these insulators were calculated for the first time. The values of these insulators for these noble gas ions are determined by Auger neutralization only. As for MgO, which is at present the most useful insulator cathode for PDPs, the values for Kr and Xe ions become zero. These calculated values of MgO for all noble gas ions were compared with experimental results reported previously. Index Terms Cathodes, gas discharges, insulators, noble gases, plasma displays, secondary electron emission. has become more important to study of insulators for various noble gases. In this paper, formulas for the simple calculation of of an insulator without impurity levels were derived from Hagstrum s theory. From these formulas, we obtained the generalized relations between and the band parameters of an insulator and the potential energy of an incident particle, which is an ion or a metastable atom, to clarify the factors determining. In particular, the metastable atom-induced values of an insulator were calculated for the first time. Moreover by applying these formulas, the values of BaO and MgO for He, Ne, Ar, Kr, and Xe ions and metastable atoms were calculated. These calculated values of MgO were compared with experimental results reported previously. In general, measurement of for an insulator is not always easy because of possible difficulties due to the charge-up effect and so forth. Therefore, it is useful to clarify the theoretical values of an insulator. I. INTRODUCTION ACOLOR plasma display panel (PDP) has been rapidly developed [1] [3] as a wall-mountable high-definition television (HDTV) receiver from such viewpoints as ease of producing a large flat display and high operational speed. However, reductions in the cost and power consumption are required to increase the penetration of PDPs into the marketplace. To reduce power consumption, it is necessary to improve luminous efficiency. One way of doing this is to reduce the discharge voltage. Therefore, the secondary electron yield of the cathode, which closely relates to the discharge voltage, has become an important object of study [4], [5]. As for metal, the generalized relations between values and physical parameters were calculated [6] from Hagstrum s theory [7], [8]. However, as for theoretical values of insulators, except BaO [9], those of MgO for Ne and Ar ions were only calculated [10] after MgO was used as cathodes for monochrome ac PDPs because of its low firing voltage and good durability [11] [13]. In recent years, color ac PDPs, which use the vacuum ultraviolet radiation from Xe gas to excite phosphors, have been put to practical use. Therefore, it Manuscript received November 6, 2000; revised February 20, The review of this paper was arranged by Editor J. Hynecek. The authors are with the NHK Japan Broadcasting Corporation, Tokyo , Japan ( motoyama@strl.nhk.or.jp). Publisher Item Identifier S (01) II. DERIVATION OF SECONDARY ELECTRON YIELD A. Conditions for Secondary Electron Emission According to the research by Hagstrum [7], [8], it is known that secondary electron emission by low-velocity ions, as in conventional gas-discharge phenomena [14], does not depend on kinetic energy but mostly on the potential (internal) energy of the ion. In this case, the mechanism of electron emission consists of the following two processes: i) Auger neutralization (one step); ii) resonance neutralization Auger deexcitation (two steps). Here Auger neutralization, resonance neutralization (the inverse of this is resonance ionization), and Auger deexcitation are tunnel effects as shown in Fig. 1(a) (c), respectively, where the latter two are concerned with the excited state of the atom, especially the metastable states. The notions of physical parameters used in Fig. 1 are defined in Table I, which are also used throughout the paper. When impurity levels do not exist in the band gap of an insulator, the necessary condition that i) and ii) occur is given by and, respectively. Therefore, depending on the combination of an insulator and a gas, the following cases exist: only i) or ii) occurs, both i) and ii) occur, or neither i) nor ii) occur. Moreover, the necessary conditions that the electron can be ejected by the above mechanisms are for i) and for ii). Here, all electronic transitions between ions (atoms) and a solid /01$ IEEE
2 MOTOYAMA: SECONDARY ELECTRON YIELD OF INSULATOR CATHODES 1569 Fig. 1. Schematic diagram illustrating electronic transitions at an insulator surface. (a) Auger neutralization of an ion. (b) Resonance neutralization of an ion. (c) Auger deexcitation of on an excited atom. TABLE I DEFINITION OF PHYSICAL PARAMETERS electron and is considered proportional to. Next, for an electron thus excited to escape from the solid, it is necessary that. Assuming that this escape probability is,we obtain the following expression for the secondary electron yield at a distance (2) are summarized in Fig. 2, also including the processes without electron emission. B. Secondary Electron Yield Based on Auger Neutralization The electron energy distribution function in the valance band of the insulator is given by the product of the state density and the Fermi Dirac distribution function, where the latter can be regarded as a step function at room temperature, that is, for and for.as in Fig. 1(a), when electron 1 moves to the ground state of an atom and electron 2 is excited at the same time, the energy distribution of the excited electron is given by the following expression by using the Auger transform defined in it, with the assumption that the matrix element of this transition is independent of the energies of these electrons [8] where for the electron excited by Auger neutralization is not isotropic. By taking this into consideration, the next formula was proposed introducing parameters and [8] (3) Hagstrum determined, by adjusting with the experimental results of He for Ge. These values are also used in the present calculation. Since a transition occurs when an ion comes a long way to the solid surface, the desired must be an average of over. In practice, however, it is known from experiments that transitions occur collectively at a certain distance [7], [8]. Therefore, substituting the ionization energy at for, we can obtain a good approximation of. In practical calculations, the state density in must be given. But this varies depending on the kind of insulator. So, here the calculations are performed for two cases, a flat band and a parabolic band, to study the influence of the state-density profile on the value. Furthermore, by putting and to normalize the variables, we obtain the following formula from (2) (4) (1) where is the delta function of Dirac and shows the conservation of energy, and is the state density for the excited where ; ;.
3 1570 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 48, NO. 8, AUGUST 2001 Fig. 2. Chart showing the relations and conditions for various electronic transitions at the solid surface including secondary electron emission. The function, which is finite only in is given as follows, depending on the state density assumed: for flat band Here, as in Auger neutralization, assuming is a flat band or a parabolic band, and putting and, we obtain (5) for parabolic band C. Secondary Electron Yield Based on Auger Deexcitation When an ion approaches a solid surface and resonance neutralization occurs, the ion becomes the excited atom. After this process, unless resonance ionization occurs with the condition for a smaller distance, the excited atom is considered to return to the ground state by Auger deexcitation. Accordingly, as a component of the secondary electron yield by an ion, we have to consider as well as the above-mentioned. Specifically, when the transition ratio of Auger neutralization to resonance neutralization is to, then is given by. On the other hand, in the secondary electron yield by a metastable atom, this is considered to be the only component, namely,. Similar to the procedure for obtaining, the energy distribution of the excited electron is given by In Auger deexcitation too, by adopting the same escape probability as in Auger neutralization and the excitation energy at, is obtained as follows: (6) (7) (8) where and. The function, which is finite only in, is given as follows, depending on the state density assumed: for flat band for parabolic band III. RESULTS AND DISCUSSION (9) (10) (11) A. Factors that Determine of Insulator Formulas (2) and (8) indicate that, unlike metals, it is not work function but the sum of band gap and electron affinity that essentially contributes to and of an insulator. As for, from (4), the necessary condition for is, which means. This is a natural result from the energy conservation law. Now, defining new quantities and and taking the former as a variable and the latter and as parameters, we calculated for the flat band from (4) and (5) and that for the parabolic band from (4) and (6), as shown in Fig. 3(a) and (b), respectively. From these figures, it is evident that 1) is not more than 0.5 and increases monotonically with increasing ; 2) when is constant, increases with increasing ; 3) when is constant, increases with decreasing ;
4 MOTOYAMA: SECONDARY ELECTRON YIELD OF INSULATOR CATHODES 1571 Fig. 3. Calculated results of the secondary electron yield based on Auger neutralization as a function of b with the parameters a and : b 2( 0 1)= (2 0 + )=(E =) 0 2; a ( 0 )=2 =" =" ; " =". (a) Flat-band model. (b) Parabolic-band model. 4) the difference in between the flat and parabolic bands increases with decreasing. From these results, the conditions in searching for an insulator cathode with large could be as follows: first, should be small; second, should be small. On the other hand, as for, from (9), the necessary condition for is, which means. Now, defining new quantities and and taking the former as a variable and the latter and as parameters, we calculated for a flat band from (9) and (10), and that for a parabolic band from (9) and (11), as shown in Fig. 4(a) and (b), respectively. The situations of depending on,,, and the state-density profile are similar to those of depending on,, and the state-density profile. Also, the conditions in searching for an insulator cathode with large are similar to those of. and become the maximum limiting values when the electron affinity becomes zero (namely ) as shown in Figs. 3 and 4. It may be considered that these limiting cases also hold for the insulators with negative electron affinity (NEA). B. Calculation of Values of BaO and MgO In the practical calculations of, the values of and are necessary, which are not always obvious. However, it was reported that the difference between and (free space ionization energy) was small, for example, within about 10% [8]. Therefore, for simplicity, calculations were made on the assumption that the values of and were equal to those of and (free space energy of the metastable state), respectively. The values of BaO and MgO for all noble gas ions and metastable atoms were calculated by using the formulas in the previous section. Table III shows these results. The band parameters of BaO and MgO used in these calculations are shown in Table II. The calculated results show that resonance neutralization can not occur with the combinations of these insulators and all noble gases because of the condition. Therefore, values of BaO and MgO for all noble gas ions are determined by Auger neutralization only, namely. The values of BaO for all noble gas ions are similar to those reported in [9]. As for MgO, the calculated values for Kr and Xe ions become zero because of the condition, although values remain finite for all noble-gas metastable atoms. This result is remarkable, since the Xe ions are considered principal incident particles toward cathodes for practical color PDPs. C. Comparisons with Experimental Values of MgO In general, measurement of for an insulator is not always easy because of possible difficulties due to the charge-up effect and so forth. Therefore, as shown in Table IV, measured values of MgO do not always show a constant value in these experiments done by different researchers. In three cases, the values were measured using an ion beam technique in a vacuum [15], [17], [18], in which case the measured values depend on the accelerating voltage of the ions. In the other cases, values were estimated from breakdown voltages in gas [16], [19], [20], in which case the estimated values depend on ( is the electric field, is the gas pressure). Therefore, it is difficult to compare our results with such experimental results quantitatively.
5 1572 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 48, NO. 8, AUGUST 2001 Fig. 4. Calculated results of the secondary electron yield based on Auger deexcitation as a function of b with the parameters a and : b ( 0 1)= (1 0 + )=(E =) 0 1; a 0 = " =" ; " =". (a) Flat-band model. (b) Parabolic-band model. TABLE II BAND PARAMETERS OF BaO AND MgO USED IN THIS STUDY TABLE III VALUES OF E AND E FOR NOBLE GASES AND THE THEORETICALLY CALCULATED VALUES OF BaO AND MgO However, it is useful to compare the general tendency of our results with those of the experimental results in Table IV. Here, the variation tendency of the experimental values depending on the kind of gas ions, coincides well with that of our results. Especially, the small values for the Xe ion in these experiments support the validity of our model. D. Dependence of Values of MgO on State-Density Profile Figs. 5 and 6 show the values of MgO versus and the values of MgO versus respectively. The values for the flat band become larger than those for the parabolic band with decreasing. The values for the flat band also become larger than those of the parabolic band with decreasing. These result from the fact that when and are small, electron transitions principally occur in the upper level of the valence band, where the state density of the flat band is larger than that of the parabolic band. As for and values for noble gases, however, the differences between those for flat and parabolic bands are small as shown in Figs. 5 and 6. Therefore, it can be considered that and of MgO for the noble gases are almost independent of their state-density profile.
6 MOTOYAMA: SECONDARY ELECTRON YIELD OF INSULATOR CATHODES 1573 TABLE IV COMPARISONS OF THE THEORETICALLY CALCULATED VALUES OF MgO WITH EXPERIMENTAL VALUES FROM THE LITERATURE Fig. 5. Calculated values of MgO as a function of b both for the flat-band model (broken line) and parabolic-band model (solid line): b 2( 0 1)= (2 0 + ); a ( 0 )=2 =" =" =0:395; " =" =0:933. neutralization. As for MgO, the values for Kr and Xe ions become zero, although values remain finite for all noble-gas metastable atoms. The calculated values of MgO for all noble gas ions were compared with experimental results reported previously. In general, the measurement of of insulators is not always easy because of possible difficulties due to the charge-up effect and so forth. Therefore, it is useful to clarify the theoretical values of insulators without impurity levels as a first step. These results should act as a useful guideline in the search for the optimum cathode materials for a PDP. As for further work, a study into the influences of 1) charge-up effect; 2) impurity levels; 3) crystalline orientation; 4) adsorption etc., on of insulators is needed. Furthermore, in the PDP-like gas space, due to the back diffusion of electrons, effective secondary electron yield was known to be reduced in comparison with the present in a vacuum [21]. This is also being studied in our research group [22]. Incidentally, after our report on the theoretical study of the of insulators [23], [24], we found a report on a theoretical study dealing with the particular case of MgO [25]. Although this report does not contradict ours, the value of MgO calculated in this report is larger than ours, probably due to the different formula used for escape probability. ACKNOWLEDGMENT The authors would like to thank Dr. F. Sato and all members of the research group for their encouragement and useful suggestions. Fig. 6. Calculated values of MgO as a function of b both for the flat-band model (broken line) and parabolic-band model (solid line): b ( 0 1)=(1 0 + )=(E =) 0 1; a 0 = " = " =0:395; " =" =0:933. IV. CONCLUSION We obtained the generalized relations between and the band parameters of an insulator and the potential energy of an incident particle, which is an ion or a metastable atom. Moreover, the values of BaO and MgO for He, Ne, Ar, Kr, and Xe ions and metastable atoms were calculated. The results show that the values for these noble gas ions are determined only by Auger REFERENCES [1] T. Yamamoto, T. Kuriyama, M. Seki, T. Katoh, T. Takei, T. Kawai, H. Murakami, and K. Shimada, 40-inch-diagonal HDTV DC plasma display, IEEE Trans. Electron Devices, vol. 42, pp , May [2] M. Seki, Y. Takano, T. Katoh, T. Yamamoto, T. Kawai, T. Koura, S. Ueda, T. Takei, T. Tajima, T. Kuriyama, J. Koike, H. Murakami, K. Takahashi, Y. Sasaoka, and M. Kasahara, Development of a 42-inch DC-PDP for Hi-vision (in Japanese), J. Inst. Image Inform. Television Eng., vol. 54, no. 2, pp , [3] T. Nishio and K. Amemiya, High-luminance and high-definition 50-in.- diagonal co-planar color PDPs with T-shaped electrodes, in Proc. SID Int. Symp. Dig. Tech. Papers, May 1999, pp [4] O. Sahni and C. Lanza, Importance of the dependence of the secondary electron emission coefficient on E=p for Paschen breakdown curves in ac plasma panels, J. Appl. Phys., vol. 47, no. 4, pp , [5] M. Ishimoto, D. Hidaka, K. Betsui, and T. Shinoda, Secondary-electron analysis of MgO films in ac plasma displays, in Proc. SID Int. Symp. Dig. Tech. Papers, May 1999, pp
7 1574 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 48, NO. 8, AUGUST 2001 [6] H. Matsuzaki, Discharge characteristics and their analysis of alkaline metal cold cathodes (in Japanese), Trans. Inst. Elect. Eng. Jpn., vol. 111-A, no. 11, pp , [7] H. D. Hagstrum, Theory of Auger ejection of electrons from metals by ions, Phys. Rev., vol. 96, no. 2, pp , [8], Theory of Auger neutralization of ions at the surface of a diamond-type semiconductor, Phys. Rev., vol. 122, no. 1, pp , [9] Y. Takeishi, Ejection of electrons from barium oxide by noble gas ions, J. Phys. Soc. Jpn., vol. 17, no. 2, pp , [10] M. O. Aboelfotoh and J. A. Lorenzen, Influence of secondary-electron emission from MgO surfaces on voltage-breakdown curves in Penning mixtures for insulated-electrode discharge, J. Appl. Phys., vol. 48, no. 11, pp , [11] T. Urade, T. Iemori, M. Osawa, N. Nakayama, and I. Morita, A protecting layer for the dielectric in ac plasma panels, IEEE Trans. Electron Devices, vol. ED-23, pp , Mar [12] H. Uchiike, K. Miura, N. Nakayama, T. Shinoda, and Y. Fukushima, Secondary electron emission characteristics of dielectric materials in ac-operated plasma display panels, IEEE Trans. Electron Devices, vol. ED-23, pp , Nov [13] N. J. Chou and O. Sahni, Comments on Secondary electron emission characteristics of dielectric materials in ac-operated plasma display panels, IEEE Trans. Electron Devices, vol. ED-25, pp , Jan [14] Y. K. Shin, J. K. Lee, C. H. Shon, and W. Kim, Ion energy distribution in alternating-current plasma display panel cell, Jpn. J. Appl. Phys., pt. 2, vol. 38, no. 2B, pp. L174 L177, [15] N. J. Chou, Ion-induced secondary-electron emission from MgO films, J. Vac. Sci. Technol., vol. 14, no. 1, pp , [16] S. Ho, M. Saji, S. Ihara, M. Shiiki, K. Suzuki, A. Yuhara, A. Yokoyama, M. Ishigaki, R. Sato, N. Kouchi, and Y. Hatano, Numerical analysis of discharge voltage and light emission efficiency in ac-pdps, in Proc. Int. Display Workshops 98, Dec. 1998, pp [17] K. S. Moon, J. Lee, and K.-W. Whang, Electron ejection from MgO thin films by low energy noble gas ions: Energy dependence and initial instability of the secondary electron emission coefficient, J. Appl. Phys., vol. 86, no. 7, pp , [18] E.-H. Choi, J.-Y. Lim, Y.-G. Kim, J.-J. Ko, D.-I. Kim, C.-W. Lee, and G.-S. Cho, Secondary electron emission coefficient of a MgO single crystal, J. Appl. Phys., vol. 86, no. 11, pp , [19] G. Auday, P. Guillot, and J. Galy, Secondary emission of dielectrics used in plasma display panels, J. Appl. Phys., vol. 88, no. 8, pp , [20] V. V. Elsbergen, P. K. Bachmann, and T. Juestel, Ion-induced secondary electron emission: A comparative study, in SID Int. Symp. Dig. Tech. Papers, May 2000, pp [21] O. Sahni and C. Lanza, Influence of the secondary electron emission coefficient of argon on Paschen breakdown curves in ac plasma panels for neon +0.1% argon mixture, J. Appl. Phys., vol. 47, no. 11, pp , [22] Y. Murakami, H. Matsuzaki, H. Murakami, and N. Ikuta, Effective secondary electron yield of a cathode for plasma display panel, Jpn. J. Appl. Phys., no. 5A, pp , [23] Y. Motoyama, M. Ushirozawa, and H. Matsuzaki, Calculation of the secondary electron yield of insulator for PDP cathode, (in Japanese), IEICE Tech. Rep. EID99-46, July [24] Y. Motoyama, M. Ushirozawa, H. Matsuzaki, Y. Takano, and M. Seki, Study on the secondary electron yield of insulator for PDP cathode, Bull. Am. Phys. Soc. (52 Gas. Electron. Conf.), vol. 44, no. 4, p. 52, Oct [25] J. Yoon, I. Lee, J.-W. Lee, and B. Oh, Intrinsic and effective secondary electron emission coefficients in ac plasma display panel, Jpn. J. Appl. Phys., vol. 2A, pp , Yasushi Motoyama received the B.E. and M.E. degrees in electrical information engineering from Yokohama National University, Japan in 1984 and 1986, respectively. In 1986, he joined the NHK Japan Broadcasting Corporation. From 1986 to 1989, he worked at the NHK Niigata Broadcasting Station, Niigata Prefecture. Since then, he has been with the Science and Technical Research Laboratories, NHK, Tokyo, and has been engaged in research of plasma display devices. Mr. Motoyama is a member of the Institute of Image Information and Television Engineers. Hideomi Matsuzaki was born in Tokyo, Japan on April 28, He received the B.E. degree in applied physics, and the M.E. and Ph.D. degrees in electronic engineering, all from the University of Tokyo, Japan, in 1967, 1969, and 1972, respectively. Since 1972, he has been with the Science and Technical Research Laboratories, NHK Japan Broadcasting Corporation, Tokyo, where he has been engaged in the research and development of plasma display panels. His current research interest is electrical and optical phenomena in gases and their applications. Dr. Matsuzaki is a member of the Institute of Image Information and Television Engineers and the Institute of Electrical Engineers of Japan. Hiroshi Murakami received the B.E. degree in electrical communication engineering and the Ph.D. degree in electronic engineering from Osaka University, Japan, in 1967 and 1988, respectively. In 1967, he joined the NHK Japan Broadcasting Corporation. He has been engaged in the research and development of plasma displays at the Science and Technical Research Laboratories, NHK, Tokyo, since 1967, except one year from 1998 to 1999, when he was the Secretary-General of the Hi-Vision PDP Consortium, NHK Engineering Services, Inc. Dr. Murakami received the SID Special Recognition Award in 1994 and awards for his contribution to the development and commercialization of HDTV plasma displays from both the ITE and the IEICE in He is a member of the Society for Information Displays, the Institute of Image Information and Television Engineers, and the Institute of Electronics, Information, and Communication Engineers.
IEEE TRANSACTIONS ON PLASMA SCIENCE 1. Calculation of Secondary Electron Emission Yield From MgO Surface. Yasushi Motoyama and Fumio Sato
IEEE TRANSACTIONS ON PLASMA SCIENCE 1 Calculation of Secondary Electron Emission Yield From MgO Surface Yasushi Motoyama and Fumio Sato Abstract Secondary electron emission yield values for rare-gas particles
More informationMaterial Technology for Energy-efficient PDPs
Material Technology for Energyefficient PDPs The power consumption of plasma display panels (PDP) is rising as their size and resolution increase. To stem this rise, PDPs should be made more energy efficient
More informationAnalysis of a MgO Protective Layer Deposited with Ion-Beam-Assisted Deposition in an AC PDP
Journal of the Korean Physical Society, Vol. 49, No. 6, December 2006, pp. 2332 2337 Analysis of a MgO Protective Layer Deposited with Ion-Beam-Assisted Deposition in an AC PDP Zhao Hui Li, Eou Sik Cho
More informationReduction of Power Consumption of Counter Electrode Structure in AC-PDP
Mol. Cryst. Liq. Cryst., Vol. 564: pp. 85 93, 2012 Copyright Kyungpook National Univeristy ISSN: 1542-1406 print/1563-5287 online DOI: 10.1080/15421406.2012.691690 Reduction of Power Consumption of Counter
More informationImprovement of MgO Characteristics Using RF-Plasma Treatment in AC Plasma Display Panel
Mol. Cryst. Liq. Cryst., Vol. 531: pp. 73=[373] 81=[381], 2010 Copyright # Taylor & Francis Group, LLC ISSN: 1542-1406 print=1563-5287 online DOI: 10.1080/15421406.2010.499331 Improvement of MgO Characteristics
More informationSimulation of the cathode surface damages in a HOPFED during ion bombardment
Simulation of the cathode surface damages in a HOPFED during ion bombardment Hongping Zhao, Wei Lei, a Xiaobing Zhang, Xiaohua Li, and Qilong Wang Department of Electronic Engineering, Southeast University,
More informationInfluence of Axial Magnetic Field on the Electrical Breakdown and Secondary Electron Emission in Plane-Parallel Plasma Discharge
Vol:5, No:8, 211 Influence of Axial Magnetic Field on the Electrical Breakdown and Secondary Electron Emission in Plane-Parallel Plasma Discharge Sabah I. Wais, Raghad Y. Mohammed, Sedki O. Yousif International
More informationThe Effect of Discharge Characteristics on Dielectric Barrier Discharges According to the Relative Permittivity
, pp.21-27 http://dx.doi.org/10.14257/astl.2017.145.05 The Effect of Discharge Characteristics on Dielectric Barrier Discharges According to the Relative Permittivity Don-Kyu Lee Electrical Engineering,
More informationIonization Detectors. Mostly Gaseous Detectors
Ionization Detectors Mostly Gaseous Detectors Introduction Ionization detectors were the first electrical devices developed for radiation detection During the first half of the century: 3 basic types of
More informationMONOCHROMATIZATION AND POLARIZATION OF THE NEON SPECTRAL LINES IN CONSTANT/VARIABLE MAGNETIC FIELD
Romanian Reports in Physics 69, 49 (217) MONOCHROMATIZATION AND POLARIZATION OF THE NEON SPECTRAL LINES IN CONSTANT/VARIABLE MAGNETIC FIELD I. GRUIA, L.C. CIOBOTARU* University of Bucharest, Faculty of
More informationAn Investigation of the Secondary Electron Emission Coefficient of Aluminum and Graphite Disc Electrodes
An Investigation of the Secondary Electron Emission Coefficient of Aluminum and Graphite Disc Electrodes S. Radwan 1 and M. Bourham 2 (1) Accelerators & Ion Sources Department, Basic Nuclear Science Division,
More informationElectrical Breakdown in Low-Pressure Nitrogen in Parallel Electric and Magnetic Fields
Electrical Breakdown in Low-Pressure Nitrogen in Parallel Electric and Magnetic Fields Karim Abu-Elabass Department of machinery and electrical equipment, Prince Sultan Industrial Institute, Military Industries
More informationHigh-Precision Evaluation of Ultra-Shallow Impurity Profiles by Secondary Ion Mass Spectrometry
High-Precision Evaluation of Ultra-Shallow Impurity Profiles by Secondary Ion Mass Spectrometry Yoko Tada Kunihiro Suzuki Yuji Kataoka (Manuscript received December 28, 2009) As complementary metal oxide
More informationAdjustment of electron temperature in ECR microwave plasma
Vacuum (3) 53 Adjustment of electron temperature in ECR microwave plasma Ru-Juan Zhan a, Xiaohui Wen a,b, *, Xiaodong Zhu a,b, Aidi zhao a,b a Structure Research Laboratory, University of Science and Technology
More informationChapter VI: Ionizations and excitations
Chapter VI: Ionizations and excitations 1 Content Introduction Ionization in gases Ionization in solids Fano factor 2 Introduction (1) Ionizations created by charged particles (incident particles or particles
More informationStatistical Instability of Barrier Micro-Discharges Operating in Townsend Regime
Statistical Instability of Barrier Micro-Discharges Operating in Townsend Regime V. P. Nagorny, V. N. Khudik Plasma Dynamics Corporation, Waterville, OH 43566 New kind of instability of a macroscopic physical
More informationELECTROMAGNETIC WAVES
VISUAL PHYSICS ONLINE MODULE 7 NATURE OF LIGHT ELECTROMAGNETIC WAVES SPECTRA PRODUCED BY DISCHARGE TUBES CATHODE RAYS (electron beams) Streams of electrons (negatively charged particles) observed in vacuum
More informationJOURNAL OF APPLIED PHYSICS 102,
JOURNAL OF APPLIED PHYSICS 102, 014904 2007 Generation mechanism of residual direct current voltage in a liquid crystal display and its evaluation parameters related to liquid crystal and alignment layer
More informationHigh Beta Discharges with Hydrogen Storage Electrode Biasing in the Tohoku University Heliac
J. Plasma Fusion Res. SERIES, Vol. 8 (2009) High Beta Discharges with Hydrogen Storage Electrode Biasing in the Tohoku University Heliac Hiroyasu UTOH, Kiyohiko NISHIMURA 1), Hajime UMETSU, Keiichi ISHII,
More informationTemperature dependence of spin diffusion length in silicon by Hanle-type spin. precession
Temperature dependence of spin diffusion length in silicon by Hanle-type spin precession T. Sasaki 1,a), T. Oikawa 1, T. Suzuki 2, M. Shiraishi 3, Y. Suzuki 3, and K. Noguchi 1 SQ Research Center, TDK
More informationExperimental study of breakdown voltage and effective secondary electron emission coefficient for a micro-plasma device
INSTITUTE OF PHYSICS PUBLISHING Plasma Sources Sci. Technol. 13 (2004) 207 212 PLASMA SOURCES SCIENCE AND TECHNOLOGY PII: S0963-0252(04)75197-X Experimental study of breakdown voltage and effective secondary
More informationEffective Capacitance Enhancement Methods for 90-nm DRAM Capacitors
Journal of the Korean Physical Society, Vol. 44, No. 1, January 2004, pp. 112 116 Effective Capacitance Enhancement Methods for 90-nm DRAM Capacitors Y. K. Park, Y. S. Ahn, S. B. Kim, K. H. Lee, C. H.
More informationEE6701 HIGH VOLTAGE ENGINEERING UNIT II-DIELECTRIC BREAKDOWN PART A
EE6701 HIGH VOLTAGE ENGINEERING UNIT II-DIELECTRIC BREAKDOWN PART A 1. Mention the gases used as the insulating medium in electrical apparatus? Most of the electrical apparatus use air as the insulating
More informationPIC/MCC Simulation of Radio Frequency Hollow Cathode Discharge in Nitrogen
PIC/MCC Simulation of Radio Frequency Hollow Cathode Discharge in Nitrogen HAN Qing ( ), WANG Jing ( ), ZHANG Lianzhu ( ) College of Physics Science and Information Engineering, Hebei Normal University,
More informationTM-Radiation From an Obliquely Flanged Parallel-Plate Waveguide
1534 IEEE TRANSACTIONS ON ANTENNAS AND PROPAGATION, VOL. 50, NO. 11, NOVEMBER 2002 TM-Radiation From an Obliquely Flanged Parallel-Plate Waveguide Jae Yong Kwon, Member, IEEE, Jae Wook Lee, Associate Member,
More informationChemistry Instrumental Analysis Lecture 5. Chem 4631
Chemistry 4631 Instrumental Analysis Lecture 5 Light Amplification by Stimulated Emission of Radiation High Intensities Narrow Bandwidths Coherent Outputs Applications CD/DVD Readers Fiber Optics Spectroscopy
More informationBreakdown behavior in radio-frequency argon discharges
PHYSICS OF PLASMAS VOLUME 10, NUMBER 3 MARCH 2003 H. B. Smith, C. Charles, and R. W. Boswell Plasma Research Laboratory, Research School of Physical Sciences and Engineering, Australian National University,
More informationDevelopment of a High-Speed VUV Camera System for 2-Dimensional Imaging of Edge Turbulent Structure in the LHD
Development of a High-Speed VUV Camera System for 2-Dimensional Imaging of Edge Turbulent Structure in the LHD Masaki TAKEUCHI, Satoshi OHDACHI and LHD experimental group National Institute for Fusion
More informationDEPOSITION OF THIN TiO 2 FILMS BY DC MAGNETRON SPUTTERING METHOD
Chapter 4 DEPOSITION OF THIN TiO 2 FILMS BY DC MAGNETRON SPUTTERING METHOD 4.1 INTRODUCTION Sputter deposition process is another old technique being used in modern semiconductor industries. Sputtering
More informationPhotoelectron spectroscopy Instrumentation. Nanomaterials characterization 2
Photoelectron spectroscopy Instrumentation Nanomaterials characterization 2 RNDr. Věra V Vodičkov ková,, PhD. Photoelectron Spectroscopy general scheme Impact of X-ray emitted from source to the sample
More informationCHARACTERIZATION OF A DC PLASMA WITH HOLLOW CATHODE EFFECT
Romanian Reports in Phisics, Vol. 56, No., P. 71-76, 004 CHARACTERIZATION OF A DC PLASMA WITH HOLLOW CATHODE EFFECT A. R. PETRE 1, M. BÃZÃVAN 1, V. COVLEA 1, V.V. COVLEA 1, ISABELLA IOANA OPREA, H. ANDREI
More informationComparison of hollow cathode and Penning discharges for metastable He production
INSTITUTE OF PHYSICS PUBLISHING Plasma Sources Sci. Technol. 11 (2002) 426 430 Comparison of hollow cathode and Penning discharges for metastable He production PLASMA SOURCES SCIENCE AND TECHNOLOGY PII:
More informationStructural Optimization of Silicon Carbide PIN Avalanche Photodiodes for UV Detection
Journal of the Korean Physical Society, Vol. 56, No. 2, February 2010, pp. 672 676 Structural Optimization of Silicon Carbide PIN Avalanche Photodiodes for UV Detection Ho-Young Cha School of Electronic
More informationarxiv: v1 [physics.app-ph] 24 Dec 2018
Characterization of charge neutralizer using carbon-nanotube field emitter Shuhei Okawaki, Satoshi Abo, Fujio Wakaya, a) Hayato Yamashita, Masayuki Abe, and Mikio Takai Graduate School of Engineering Science,
More informationEnergy fluxes in plasmas for fabrication of nanostructured materials
Energy fluxes in plasmas for fabrication of nanostructured materials IEAP, Universität Kiel 2nd Graduate Summer Institute "Complex Plasmas" August 5-13, 2010 in Greifswald (Germany) AG 1 Outline Motivation
More informationINFLUENCE OF MAGNETIC FIELD ON MONOCHROME VISIBLE LIGHT IN ELECTROPOSITIVE ELECTRONEGATIVE GAS MIXTURES DISCHARGES PLASMA
THE PUBLISHING HOUSE PROCEEDINGS OF THE ROMANIAN ACADEMY, Series A, OF THE ROMANIAN ACADEMY Volume 7, Number /, pp. 3 3 INFLUENCE OF MAGNETIC FIELD ON MONOCHROME VISIBLE LIGHT IN ELECTROPOSITIVE ELECTRONEGATIVE
More informationModeling nonthermal plasmas generated in glow discharges*
Pure Appl. Chem., Vol. 71, No. 10, pp. 1837±1844, 1999. Printed in Great Britain. q 1999 IUPAC Modeling nonthermal plasmas generated in glow discharges* I. Revel, Ph. Belenguer, J. P. Boeuf and L. C. Pitchford²
More informationCombinatorial RF Magnetron Sputtering for Rapid Materials Discovery: Methodology and Applications
Combinatorial RF Magnetron Sputtering for Rapid Materials Discovery: Methodology and Applications Philip D. Rack,, Jason D. Fowlkes,, and Yuepeng Deng Department of Materials Science and Engineering University
More informationIonization Detectors
Ionization Detectors Basic operation Charged particle passes through a gas (argon, air, ) and ionizes it Electrons and ions are collected by the detector anode and cathode Often there is secondary ionization
More informationRadionuclide Imaging MII Detection of Nuclear Emission
Radionuclide Imaging MII 3073 Detection of Nuclear Emission Nuclear radiation detectors Detectors that are commonly used in nuclear medicine: 1. Gas-filled detectors 2. Scintillation detectors 3. Semiconductor
More informationSputtering Yield of Noble Gas Irradiation onto Tungsten Surface
J. Adv. Simulat. Sci. Eng. Vol. 3, No. 2, 165 172. c 2016 Japan Society for Simulation Technology Sputtering Yield of Noble Gas Irradiation onto Tungsten Surface Hiroaki Nakamura 1,2,*, Seiki Saito 3,
More informationMS482 Materials Characterization ( 재료분석 ) Lecture Note 2: UPS
2016 Fall Semester MS482 Materials Characterization ( 재료분석 ) Lecture Note 2: UPS Byungha Shin Dept. of MSE, KAIST 1 Course Information Syllabus 1. Overview of various characterization techniques (1 lecture)
More informationRemoval of Cu Impurities on a Si Substrate by Using (H 2 O 2 +HF) and (UV/O 3 +HF)
Journal of the Korean Physical Society, Vol. 33, No. 5, November 1998, pp. 579 583 Removal of Cu Impurities on a Si Substrate by Using (H 2 O 2 +HF) and (UV/O 3 +HF) Baikil Choi and Hyeongtag Jeon School
More informationDiscovered by German scientist Johann Hittorf in 1869 and in 1876 named by Eugen Goldstein.
DO PHYSICS ONLINE CATHODE RAYS CATHODE RAYS (electron beams) Streams of electrons (negatively charged particles) observed in vacuum tubes - evacuated glass tubes that are equipped with at least two metal
More informationLee Chen, Merritt Funk, and Radha Sundararajan Tokyo Electron America, Austin, Texas 78741
Measurement of electron temperatures and electron energy distribution functions in dual frequency capacitively coupled CF 4 /O 2 plasmas using trace rare gases optical emission spectroscopy Zhiying Chen,
More informationION Pumps for UHV Systems, Synchrotrons & Particle Accelerators. Mauro Audi, Academic, Government & Research Marketing Manager
ION Pumps for UHV Systems, Synchrotrons & Particle Accelerators Mauro Audi, Academic, Government & Research Marketing Manager ION Pumps Agilent Technologies 1957-59 Varian Associates invents the first
More informationChapter Test B. Chapter: Arrangement of Electrons in Atoms. possible angular momentum quantum numbers? energy level? a. 4 b. 8 c. 16 d.
Assessment Chapter Test B Chapter: Arrangement of Electrons in Atoms PART I In the space provided, write the letter of the term or phrase that best completes each statement or best answers each question
More informationEffect of Spiral Microwave Antenna Configuration on the Production of Nano-crystalline Film by Chemical Sputtering in ECR Plasma
THE HARRIS SCIENCE REVIEW OF DOSHISHA UNIVERSITY, VOL. 56, No. 1 April 2015 Effect of Spiral Microwave Antenna Configuration on the Production of Nano-crystalline Film by Chemical Sputtering in ECR Plasma
More informationCHAPTER 6: Etching. Chapter 6 1
Chapter 6 1 CHAPTER 6: Etching Different etching processes are selected depending upon the particular material to be removed. As shown in Figure 6.1, wet chemical processes result in isotropic etching
More informationNumerical Simulation of Townsend Discharge, Paschen Breakdown and Dielectric Barrier Discharges Napoleon Leoni, Bhooshan Paradkar
Numerical Simulation of Townsend Discharge, Paschen Breakdown and Dielectric Barrier Discharges Napoleon Leoni, Bhooshan Paradkar HP Laboratories HPL-2009-234 Keyword(s): Townsend Discharge, Paschen Breakdown,
More informationVacuum Electrical Breakdown Characteristics and Surface Condition of Ti Electrodes with Oxidation Conditions
98 Y. Ito et al.: Vacuum Electrical Characteristics and Surface Condition of Electrodes with Oxidation Conditions Vacuum Electrical Characteristics and Surface Condition of Electrodes with Oxidation Conditions
More informationTHE grounding resistance decreases as injected current
194 IEEE TRANSACTIONS ON POWER DELIVERY, VOL. 21, NO. 1, JANUARY 2006 Current-Dependent Grounding Resistance Model Based on Energy Balance of Soil Ionization Shozo Sekioka, Maria I. Lorentzou, Maria P.
More informationarxiv: v1 [physics.plasm-ph] 10 Nov 2014
arxiv:1411.2464v1 [physics.plasm-ph] 10 Nov 2014 Effects of fast atoms and energy-dependent secondary electron emission yields in PIC/MCC simulations of capacitively coupled plasmas A. Derzsi 1, I. Korolov
More informationContinuous viewing angle-tunable liquid crystal display using temperature-dependent birefringence layer
Continuous viewing angle-tunable liquid crystal display using temperature-dependent birefringence layer Jin Seog Gwag 1, In-Young Han 2, Chang-Jae Yu 2, Hyun Chul Choi 3, and Jae-Hoon Kim 1,2,4*, 1 Department
More informationLecture 6 Plasmas. Chapters 10 &16 Wolf and Tauber. ECE611 / CHE611 Electronic Materials Processing Fall John Labram 1/68
Lecture 6 Plasmas Chapters 10 &16 Wolf and Tauber 1/68 Announcements Homework: Homework will be returned to you on Thursday (12 th October). Solutions will be also posted online on Thursday (12 th October)
More informationOptical plasma emission spectroscopy of etching plasmas used in Si-based semiconductor processing
INSTITUTE OF PHYSICS PUBLISHING Plasma Sources Sci. Technol. (00) A A30 PLASMA SOURCES SCIENCE AND TECHNOLOGY PII: S093-05(0)3900-X Optical plasma emission spectroscopy of etching plasmas used in Si-based
More informationMal. Res. Soc. Symp. Proc. Vol Materials Research Society
91 MOLECULAR-DYNAMICS SIMULATION OF THIN-FILM GROWTH MATTHIAS SCHNEIDER,* IVAN K. SCHULLER,* AND A. RAHMAN Materials Science Division, Argonne National Laboratory, Argonne, IL 60439 Supercomputer Institute,
More informationUnit-2 LASER. Syllabus: Properties of lasers, types of lasers, derivation of Einstein A & B Coefficients, Working He-Ne and Ruby lasers.
Unit-2 LASER Syllabus: Properties of lasers, types of lasers, derivation of Einstein A & B Coefficients, Working He-Ne and Ruby lasers. Page 1 LASER: The word LASER is acronym for light amplification by
More informationGraphene Novel Material for Nanoelectronics
Graphene Novel Material for Nanoelectronics Shintaro Sato Naoki Harada Daiyu Kondo Mari Ohfuchi (Manuscript received May 12, 2009) Graphene is a flat monolayer of carbon atoms with a two-dimensional honeycomb
More informationPlasma Optimization in a Multicusp Ion Source by Using a Monte Carlo Simulation
Journal of the Korean Physical Society, Vol. 63, No. 7, October 2013, pp. 0 0 Plasma Optimization in a Multicusp Ion Source by Using a Monte Carlo Simulation M. Hosseinzadeh and H. Afarideh Nuclear Engineering
More informationIntroduction to Plasma
What is a plasma? The fourth state of matter A partially ionized gas How is a plasma created? Energy must be added to a gas in the form of: Heat: Temperatures must be in excess of 4000 O C Radiation Electric
More informationChapter 4 Scintillation Detectors
Med Phys 4RA3, 4RB3/6R03 Radioisotopes and Radiation Methodology 4-1 4.1. Basic principle of the scintillator Chapter 4 Scintillation Detectors Scintillator Light sensor Ionizing radiation Light (visible,
More informationTheory of Gas Discharge
Boris M. Smirnov Theory of Gas Discharge Plasma l Springer Contents 1 Introduction 1 Part I Processes in Gas Discharge Plasma 2 Properties of Gas Discharge Plasma 13 2.1 Equilibria and Distributions of
More informationDynamics of a coplanar-electrode plasma display panel cell. I. Basic operation
JOURNAL OF APPLIED PHYSICS VOLUME 85, NUMBER 7 1 APRIL 1999 Dynamics of a coplanar-electrode plasma display panel cell. I. Basic operation Shahid Rauf a) and Mark J. Kushner b) Department of Electrical
More informationControl of deposition profile of Cu for largescale integration (LSI) interconnects by plasma chemical vapor deposition*
Pure Appl. Chem., Vol. 77, No. 2, pp. 391 398, 2005. DOI: 10.1351/pac200577020391 2005 IUPAC Control of deposition profile of Cu for largescale integration (LSI) interconnects by plasma chemical vapor
More informationIn situ electrical characterization of dielectric thin films directly exposed to plasma vacuum-ultraviolet radiation
JOURNAL OF APPLIED PHYSICS VOLUME 88, NUMBER 4 15 AUGUST 2000 In situ electrical characterization of dielectric thin films directly exposed to plasma vacuum-ultraviolet radiation C. Cismaru a) and J. L.
More informationFINAL REPORT. DOE Grant DE-FG03-87ER13727
FINAL REPORT DOE Grant DE-FG03-87ER13727 Dynamics of Electronegative Plasmas for Materials Processing Allan J. Lichtenberg and Michael A. Lieberman Department of Electrical Engineering and Computer Sciences
More informationFriction Drive Simulation of a SAW Motor with Slider Surface Texture Variation
Advances in Science and Technology Vol. 54 (28) pp 366-371 online at http://www.scientific.net (28) Trans Tech Publications, Switzerland Online available since 28/Sep/2 Friction Drive Simulation of a SAW
More informationPHYS 3446 Lecture #12
PHYS 3446 Lecture #12 Wednesday, Oct. 18, 2006 Dr. 1. Particle Detection Ionization Detectors MWPC Scintillation Counters Time of Flight 1 Announcements Next LPCC Workshop Preparation work Each group to
More informationAppearance Potential Spectroscopy
Appearance Potential Spectroscopy Submitted by Sajanlal P. R CY06D009 Sreeprasad T. S CY06D008 Dept. of Chemistry IIT MADRAS February 2006 1 Contents Page number 1. Introduction 3 2. Theory of APS 3 3.
More informationNumerical Study on Influences of Barrier Arrangements on Dielectric Barrier Discharge Characteristics
504 IEEE TRANSACTIONS ON PLASMA SCIENCE, VOL. 31, NO. 4, AUGUST 2003 Numerical Study on Influences of Barrier Arrangements on Dielectric Barrier Discharge Characteristics Woo Seok Kang, Jin Myung Park,
More informationNumerical Simulation: Effects of Gas Flow and Rf Current Direction on Plasma Uniformity in an ICP Dry Etcher
Appl. Sci. Converg. Technol. 26(6): 189-194 (2017) http://dx.doi.org/10.5757/asct.2017.26.6.189 Research Paper Numerical Simulation: Effects of Gas Flow and Rf Current Direction on Plasma Uniformity in
More informationTHE INFLUENCE OF EXTERNAL MAGNETIC FIELD ON THE RADIATION EMITTED BY NEGATIVE GLOW OF A DC GLOW DISCHARGE
PLASMA PHYSICS THE INFLUENCE OF EXTERNAL MAGNETIC FIELD ON THE RADIATION EMITTED BY NEGATIVE GLOW OF A DC GLOW DISCHARGE M. TOMA, I. A. RUSU, D. O. DOROHOI Plasma Physics Department, A. I. Cuza University,
More informationDischarge and photo-luminance properties of a parallel plates electron emission lighting device
Discharge and photo-luminance properties of a parallel plates electron emission lighting device Chia-Hung Li, 1,2 Ming-Chung Liu, 1,* Chang-Lin Chiang, 1,2 Jung-Yu Li, 1 Shih-Pu Chen, 1 Tai-Chiung Hsieh,
More informationThe Franck-Hertz Experiment Physics 2150 Experiment No. 9 University of Colorado
Experiment 9 1 Introduction The Franck-Hertz Experiment Physics 2150 Experiment No. 9 University of Colorado During the late nineteenth century, a great deal of evidence accumulated indicating that radiation
More informationSimulation of Electron Behavior in PIG Ion Source for 9 MeV Cyclotron X. J. Mu 1, M. Ghergherehchi 1a, Y.H. Yeon 1, J.S. Chai 1
Simulation of Electron Behavior in PIG Ion Source for 9 MeV Cyclotron X. J. Mu 1, M. Ghergherehchi 1a, Y.H. Yeon 1, J.S. Chai 1 1 College of the Electric and Electrical Engineering, Sungkyunkwan University,
More informationEnergy Spectroscopy. Ex.: Fe/MgO
Energy Spectroscopy Spectroscopy gives access to the electronic properties (and thus chemistry, magnetism,..) of the investigated system with thickness dependence Ex.: Fe/MgO Fe O Mg Control of the oxidation
More informationNitrogen Glow Discharge by a DC Virtual Cathode
Nitrogen Glow Discharge by a DC Virtual Cathode Azza M. Shager a, Amany T. Sroor b, Hoda A. El Tayeb a, Hoda A. El Gamal a, and Mohamed M. Masoud a a Plasma Physics and Nuclear Fusion Department, Atomic
More informationThe low-field density peak in helicon discharges
PHYSICS OF PLASMAS VOLUME 10, NUMBER 6 JUNE 2003 Francis F. Chen a) Electrical Engineering Department, University of California, Los Angeles, Los Angeles, California 90095-1597 Received 10 December 2002;
More informationSecondary Ion Mass Spectroscopy (SIMS)
Secondary Ion Mass Spectroscopy (SIMS) Analyzing Inorganic Solids * = under special conditions ** = semiconductors only + = limited number of elements or groups Analyzing Organic Solids * = under special
More informationINTEGRAL AND SPECTRAL CHARACTERISTICS OF ATON STATIONARY PLASMA THRUSTER OPERATING ON KRYPTON AND XENON
1 INTEGRAL AND SPECTRAL CHARACTERISTICS OF ATON STATIONARY PLASMA THRUSTER OPERATING ON KRYPTON AND XENON A.I.Bugrova, A.I.Morozov *, A.S.Lipatov, A.M.Bishaev, V.K.Kharchevnikov, M.V.Kozintseva. Moscow
More informationCollisional radiative model
Lenka Dosoudilová Lenka Dosoudilová 1 / 14 Motivation Equations Approximative models Emission coefficient Particles J ij = 1 4π n j A ij hν ij, atoms in ground state atoms in excited states resonance metastable
More informationInfluence of Temperature Dependence of Solubility on Kinetics for Reactive Diffusion in a Hypothetical Binary System
Materials Transactions, Vol. 49, No. 4 (2008) pp. 715 to 722 #2008 The Japan Institute of Metals Influence of Temperature Dependence of Solubility on Kinetics for Reactive Diffusion in a Hypothetical Binary
More informationModelling Of Mathematical Equation for Determining Breakdown Voltage
2013 First International Conference on Artificial Intelligence, Modelling & Simulation Modelling Of Mathematical Equation for Determining Breakdown Voltage Muhammad S. Laili, Noradila Yusof School of Electrical
More informationDevice simulation and fabrication of field effect solar cells
Bull. Mater. Sci., Vol. 22, No. 3, May 1999, pp. 729-733. Indian Academy of Sciences. Device simulation and fabrication of field effect solar cells KAORI MIYAZAKI*, NOBUYUKI MATSUKI, HIROYUKI SHINNO, HIROSHI
More informationAtomic Level Analysis of SiC Devices Using Numerical Simulation
Atomic Level Analysis of Devices Using Numerical mulation HIRSE, Takayuki MRI, Daisuke TERA, Yutaka ABSTRAT Research and development of power semiconductor devices with (silicon carbide) has been very
More informationImaging Methods: Scanning Force Microscopy (SFM / AFM)
Imaging Methods: Scanning Force Microscopy (SFM / AFM) The atomic force microscope (AFM) probes the surface of a sample with a sharp tip, a couple of microns long and often less than 100 Å in diameter.
More informationSupporting information Chemical Design and Example of Transparent Bipolar Semiconductors
Supporting information Chemical Design and Example of Transparent Bipolar Semiconductors Takeshi Arai 1, Soshi Iimura 1, *, Junghwan Kim 2, Yoshitake Toda 2, Shigenori Ueda 3, 4, and Hideo Hosono 1, 2,
More informationSPECTRAL INVESTIGATION OF A COMPLEX SPACE CHARGE STRUCTURE IN PLASMA
SPECTRAL INVESTIGATION OF A COMPLEX SPACE CHARGE STRUCTURE IN PLASMA S. GURLUI 1, D. G. DIMITRIU 1, C. IONITA 2, R. W. SCHRITTWIESER 2 1 Faculty of Physics, Al. I. Cuza University, 11 Carol I Blvd., RO-700506
More informationSpace Charge Distribution in Polymethyl Methacrylate and Quartz Glass Irradiated by Protons
Sensors and Materials, Vol. 29, No. 8 (217) 1213 1222 MYU Tokyo 1213 S & M 1413 Space Charge Distribution in Polymethyl Methacrylate and Quartz Glass Irradiated by Protons Hiroaki Miyake * and Yasuhiro
More informationwith embedded electrode
NAOSITE: Nagasaki University's Ac Title Author(s) Citation Estimation of surface breakdown vol with embedded electrode Yamashita, Takahiko; Iwanaga, Kazuh Hiroyuki; Fujishima, Tomoyuki; Asar IEEE Transactions
More informationCold-cathode discharges and breakdown in argon: surface and gas phase production of secondary electrons
Plasma Sources Sci. Technol. 8 (1999) R21 R44. Printed in the UK PII: S0963-0252(99)02255-0 REVIEW ARTICLE Cold-cathode discharges and breakdown in argon: surface and gas phase production of secondary
More informationModern Physics for Frommies IV The Universe - Small to Large Lecture 4
Fromm Institute for Lifelong Learning University of San Francisco Modern Physics for Frommies IV The Universe - Small to Large Lecture 4 3 February 06 Modern Physics IV Lecture 4 Agenda Administrative
More informationTorque Performance and Permanent Magnet Arrangement for Interior Permanent Magnet Synchronous Motor
Extended Summary pp.954 960 Torque Performance and Permanent Magnet Arrangement for Interior Permanent Magnet Synchronous Motor Naohisa Matsumoto Student Member (Osaka Prefecture University, matumoto@eis.osakafu-u.ac.jp)
More informationCharacterization of Charge Trapping and Dielectric Breakdown of HfAlOx/SiON Dielectric Gate Stack
Characterization of Charge Trapping and Dielectric Breakdown of HfAlOx/SiON Dielectric Gate Stack Y. Pei, S. Nagamachi, H. Murakami, S. Higashi, S. Miyazaki, T. Kawahara and K. Torii Graduate School of
More informationChap. 19 Miscellaneous Detectors
Chap. 19 Miscellaneous Detectors Up to this point: Gas-filled detectors ion chambers, proportional counters, GM counters Scintillators organic, inorganic Semiconductor-based detectors Si or Ge Other possibilities:
More informationReview of Optical Properties of Materials
Review of Optical Properties of Materials Review of optics Absorption in semiconductors: qualitative discussion Derivation of Optical Absorption Coefficient in Direct Semiconductors Photons When dealing
More informationComprehensive Understanding of Carrier Mobility in MOSFETs with Oxynitrides and Ultrathin Gate Oxides
Comprehensive Understanding of Carrier Mobility in MOSFETs with Oxynitrides and Ultrathin Gate Oxides T. Ishihara*, J. Koga*, and S. Takagi** * Advanced LSI Technology Laboratory, Corporate Research &
More informationDPP06 Meeting of The American Physical Society. Production of negative ion plasmas using perfluoromethylcyclohexane (C 7 F 14 )
1 POSTER JP1.00100 [Bull. APS 51, 165 (2006)] DPP06 Meeting of The American Physical Society Production of negative ion plasmas using perfluoromethylcyclohexane (C 7 F 14 ) Su-Hyun Kim, Robert Merlino,
More informationRadio-Frequency Spectrometry
ANALYTICAL SCIENCES JUNE 1996, VOL. 12 459 Effects Argon of Helium Addition to Glow-Discharge Mass Radio-Frequency Spectrometry Jin-Chun WOOL*, Dong-Min MooN*, Tomokazu TANAKA**, Motoya MATSUNO** and Hiroshi
More information