Energy fluxes in plasmas for fabrication of nanostructured materials
|
|
- Magdalene Zoe Reeves
- 6 years ago
- Views:
Transcription
1 Energy fluxes in plasmas for fabrication of nanostructured materials IEAP, Universität Kiel 2nd Graduate Summer Institute "Complex Plasmas" August 5-13, 2010 in Greifswald (Germany) AG 1
2 Outline Motivation Contributions to the total energy influx The method of calorimetric probes Example 1: Deposition of c-bn Example 2: Generation of silver nano clusters Summary 1 AG 2
3 Motivation Contributions to the total energy influx The method of calorimetric probes Example 1: Deposition of c-bn Example 2: Generation of silver nano clusters Summary 2 AG 3
4 Motivation Deposition and modification of functional thin films and materials by plasmas Treatment of heat sensitive materials Chemical reactions induced by electrons Modification and fine tuning by ions... Film properties depend on [1]: substrate temperature pressure particle energies... [1] Thornton, J. Vac. Sci. Technol. 11, 4,
5 Examples SiOx thin films: Protective layers Adhesion control Diffusion barriers... Picture taken from [2]. c-bn thin films: Protective coatings [3]: Chemical inert against oxidation Very hard Excellent thermal conductivity Noble metal nano clusters [4]: Anti-bacterial coatings Optical devices / filters Sensors... Photo: Peter Binder [2] Schäfer et al.: Plasma Process. Polym. 2009, 6, [3] Sell et al.: Surf. and Coat. Technol. 2003, , [4] Faupel et al: Contrib. Plasma Phys. 2007, 47, 7,
6 Motivation Contributions to the total energy influx The method of calorimetric probes Example 1: Deposition of c-bn Example 2: Generation of silver nano clusters Summary 5 6
7 Contributions to the total energy influx plasma electrons ions surface J e =n e J i=ne kbte e 0 pl S exp 2kBT e 2 me kbte k BT e exp 0.5 e 0 pl S mi neutrals J rec = j i E ion W radiation J e, sec = j e E kin W J cond =qc R= n j n E B surface: chem. reactions recombination film growth sec. electron emission J total = J x [5] Kersten et al.: Vacuum 2001, 63, 3,
8 Motivation Contributions to the total energy influx The method of calorimetric probes Example 1: Deposition of c-bn Example 2: Generation of silver nano clusters Summary 7 8
9 The method of calorimetric probes Substrate dummy : Material: Brass Radius: 0.5 cm Connections: thermo couple (type K) copper wire for probe bias Ceramic shielding: Material: Macor low heat conductivity high heat capacity keeps backside of the dummy at constant temperature 8 9
10 Change of enthalpy during heating: H h =C S T h=p in Pout Change of enthalpy during cooling: H c =C S T c =P out Total or integral energy influx: P in=c S [ T h T c ] 9 [5] Kersten et al.: Vacuum 2001, 63, 3,
11 Calibration of the calorimetric probe: Exposing the probe to a source of known power: Electrons are accelerated towards the positively biased probe [6]. [6] Stahl et al.: Rev. Sci. Instrum., 2010, 81, CS 11 10
12 Motivation Contributions to the total energy influx The method of calorimetric probes Example 1: Deposition of c-bn Example 2: Generation of silver nano clusters Summary 11 12
13 Excursion: Magnetron sputtering mv v B r L= q B r L, e r L, i ion sputtered atom E B target magnets collision cascades in the target material number of sputtered atoms Y S= number of impinging ions [7] Betz, Wien: Int. J. Mass. Spectrom. 140, 1994 [8] Hippler et al.: Low Temperature Plasmas, Wiley-VCH,
14 Experimental conditions: -- 3'' hot pressed h-bn target MHz -- pressures: Pa Investigations on: -- power -- probe bias -- pressure -- nitrogen and oxygen addition 13 14
15 Plasma parameter measured with double probe: Conditions: 400 W 80 sccm argon flow Pa Plasma parameters obtained from double probe measurements are used to calculate the different contributions of impinging electrons and ions and recombination at the surface. [9] Ulrich et al.: Surf. Coat. Techn
16 Determination of the energy influx by neutral sputtered atoms: SRIM [10,11] simulations: Projectile energy (Ar): Voltage at electrode (~200 ev) Incident angle: 90 Displacement energy: 15 ev Lattice binding energy: 3 ev Surface binding energy: 3 ev Density of h-bn target: 2.28 g/cm2 Results: YS ~ 0.1 Only 0.78% of the sputtered particles reach the probe Mean kinetic energy ~6.3 ev [10] [11] Chen: IEEE Trans. P. Sci, 1998, 26, 6 AG AG 15 16
17 Contributions by different plasma species and processes: Energy influx by neutral sputtered atoms is the dominating effect. Calculations are higher than the values from the measurement because: No SEE included No collisions of sputtered atoms All sputtered atoms are incorporated Estimations of Pi, Pe, Prec represent the upper limit 16 17
18 The influence of oxygen addition Oxygen addition reduces internal stress and c-bn content Increasing energy influx due to negatively charged oxygen ions. Hysteresis caused by target poisoning 17 [12] Ulrich et al.: Thin Solid Films, 2009, 518,
19 Motivation Contributions to the total energy influx The method of calorimetric probes Example 1: Deposition of c-bn Example 2: Generation of silver nano clusters Summary 18 19
20 Experimental conditions: 2 ' silver target 5-75 DC pressures: Pa POSTER 19 20
21 The influence of the total pressure Experimental conditions: 50 W Ar flow : He flow = 1:1 Biased probe, because of the low energy influx at floating or grounded operation
22 The influence of helium addition Experimental conditions: 50 W p=10-40 Pa Helium neutral collisions open new paths for sputtered atoms to loose energy [13], thus enhances cluster formation. [13] Wagatsuma, Hirokawa, 1988, Anal. Chem., 60,
23 Summary: Introduction to calorimetric probe method Examples for different types of magnetron discharges: Model of total energy influx comparison to measurements 22 23
24 Thanks to: J. Ye, S. Ulrich T. Peter, T. Strunskus, V. Zaporojtchenko, F. Faupel M. Wolter, H. Kersten 1 24
25 Thank you for your attention! end 25
Study of DC Cylindrical Magnetron by Langmuir Probe
WDS'2 Proceedings of Contributed Papers, Part II, 76 8, 22. ISBN 978-737825 MATFYZPRESS Study of DC Cylindrical Magnetron by Langmuir Probe A. Kolpaková, P. Kudrna, and M. Tichý Charles University Prague,
More informationIncreased ionization during magnetron sputtering and its influence on the energy balance at the substrate
Institute of Experimental and Applied Physics XXII. Erfahrungsaustausch Oberflächentechnologie mit Plasma- und Ionenstrahlprozessen Mühlleithen, 10.-12. März, 2015 Increased ionization during magnetron
More informationPlasma diagnostics of pulsed sputtering discharge
Plasma diagnostics of pulsed sputtering discharge Vitezslav Stranak Zdenek Hubicka, Martin Cada and Rainer Hippler University of Greifswald, Institute of Physics, Felix-Hausdorff-Str. 6, 174 89 Greifswald,
More informationOn the Impact of Electron Temperature in Magnetron Sputtering Benchmarked with Energy Flux Measurements
Contrib. Plasma Phys. 55, No. 10, 701 713 (2015) / DOI 10.1002/ctpp.201510020 On the Impact of Electron Temperature in Magnetron Sputtering Benchmarked with Energy Flux Measurements F. Haase 1, D. Lundin
More informationThe Computational Simulation of the Positive Ion Propagation to Uneven Substrates
WDS' Proceedings of Contributed Papers, Part II, 5 9,. ISBN 978-8-778-85-9 MATFYZPRESS The Computational Simulation of the Positive Ion Propagation to Uneven Substrates V. Hrubý and R. Hrach Charles University,
More informationIn situ electrical characterization of dielectric thin films directly exposed to plasma vacuum-ultraviolet radiation
JOURNAL OF APPLIED PHYSICS VOLUME 88, NUMBER 4 15 AUGUST 2000 In situ electrical characterization of dielectric thin films directly exposed to plasma vacuum-ultraviolet radiation C. Cismaru a) and J. L.
More informationDOE WEB SEMINAR,
DOE WEB SEMINAR, 2013.03.29 Electron energy distribution function of the plasma in the presence of both capacitive field and inductive field : from electron heating to plasma processing control 1 mm PR
More informationEffect of Spiral Microwave Antenna Configuration on the Production of Nano-crystalline Film by Chemical Sputtering in ECR Plasma
THE HARRIS SCIENCE REVIEW OF DOSHISHA UNIVERSITY, VOL. 56, No. 1 April 2015 Effect of Spiral Microwave Antenna Configuration on the Production of Nano-crystalline Film by Chemical Sputtering in ECR Plasma
More information6.5 Optical-Coating-Deposition Technologies
92 Chapter 6 6.5 Optical-Coating-Deposition Technologies The coating process takes place in an evaporation chamber with a fully controlled system for the specified requirements. Typical systems are depicted
More informationAdjustment of electron temperature in ECR microwave plasma
Vacuum (3) 53 Adjustment of electron temperature in ECR microwave plasma Ru-Juan Zhan a, Xiaohui Wen a,b, *, Xiaodong Zhu a,b, Aidi zhao a,b a Structure Research Laboratory, University of Science and Technology
More informationSubstrate Thermal Heating Rates as a Function of Magnetically Controlled Plasma Impedance on Rotary Cathodes
Substrate Thermal Heating Rates as a Function of Magnetically Controlled Plasma Impedance on Rotary Cathodes Patrick Morse, Russ Lovro, Timmy Strait, Mike Rost Sputtering Components Inc. Owatonna Minnesota
More informationSCALING OF HOLLOW CATHODE MAGNETRONS FOR METAL DEPOSITION a)
SCALING OF HOLLOW CATHODE MAGNETRONS FOR METAL DEPOSITION a) Gabriel Font b) Novellus Systems, Inc. San Jose, CA, 95134 USA and Mark J. Kushner Dept. of Electrical and Computer Engineering Urbana, IL,
More informationDEPOSITION OF THIN TiO 2 FILMS BY DC MAGNETRON SPUTTERING METHOD
Chapter 4 DEPOSITION OF THIN TiO 2 FILMS BY DC MAGNETRON SPUTTERING METHOD 4.1 INTRODUCTION Sputter deposition process is another old technique being used in modern semiconductor industries. Sputtering
More informationHiden EQP Applications
Hiden EQP Applications Mass/Energy Analyser for Plasma Diagnostics and Characterisation EQP Overview The Hiden EQP System is an advanced plasma diagnostic tool with combined high transmission ion energy
More informationPHYSICAL VAPOR DEPOSITION OF THIN FILMS
PHYSICAL VAPOR DEPOSITION OF THIN FILMS JOHN E. MAHAN Colorado State University A Wiley-Interscience Publication JOHN WILEY & SONS, INC. New York Chichester Weinheim Brisbane Singapore Toronto CONTENTS
More information''Formation and Deposition of Nanoclusters'' Rainer Hippler. University of Greifswald Hoboken 31 July 2008
''Formation and Deposition of Nanoclusters'' Rainer Hippler University of Greifswald Hoboken 31 July 28 Hansestadt Greifswald Home town of Caspar David Friedrich Rainer Hippler Hoboken 28 2 Marktplatz
More informationIn search for the limits of
In search for the limits of rotating cylindrical magnetron sputtering W. P. Leroy, S. Mahieu, R. De Gryse, D. Depla DRAFT Dept. Solid State Sciences Ghent University Belgium www.draft.ugent.be Planar Magnetron
More informationKeywords. 1=magnetron sputtering, 2= rotatable cathodes, 3=substrate temperature, 4=anode. Abstract
Managing Anode Effects and Substrate Heating from Rotatable Sputter Targets. F. Papa*, V. Bellido-Gonzalez**, Alex Azzopardi**, Dr. Dermot Monaghan**, *Gencoa Technical & Business Support in US, Davis,
More informationEffect of Noble Gas. Plasma Processing Laboratory University of Houston. Acknowledgements: DoE Plasma Science Center and NSF
Ion Energy Distributions in Pulsed Plasmas with Synchronous DC Bias: Effect of Noble Gas W. Zhu, H. Shin, V. M. Donnelly and D. J. Economou Plasma Processing Laboratory University of Houston Acknowledgements:
More informationSecondary ion mass spectrometry (SIMS)
Secondary ion mass spectrometry (SIMS) ELEC-L3211 Postgraduate Course in Micro and Nanosciences Department of Micro and Nanosciences Personal motivation and experience on SIMS Offers the possibility to
More informationReactive magnetron sputter deposition: a journey from target to substrate
Reactive magnetron sputter deposition: a journey from target to substrate D. Depla Dedicated Research on Advanced Films and Targets Ghent University Setting the scene Who? Some keywords Main features of
More informationA novel sputtering technique: Inductively Coupled Impulse Sputtering (ICIS)
IOP Conference Series: Materials Science and Engineering A novel sputtering technique: Inductively Coupled Impulse Sputtering (ICIS) To cite this article: D A L Loch and A P Ehiasarian 2012 IOP Conf. Ser.:
More informationThis is an author produced version of a paper presented at 2nd PATCMC, June 6th-8th 2011 Plzeň, Czech Republic.
http://uu.diva-portal.org This is an author produced version of a paper presented at 2nd PATCMC, June 6th-8th 2011 Plzeň, Czech Republic. Kubart, T. 2011. Process modelling for reactive magnetron sputtering
More informationTheoretical analysis of ion kinetic energies and DLC film deposition by CH 4 +Ar (He) dielectric barrier discharge plasmas
Vol 16 No 9, September 2007 c 2007 Chin. Phys. Soc. 1009-1963/2007/16(09)/2809-05 Chinese Physics and IOP Publishing Ltd Theoretical analysis of ion kinetic energies and DLC film deposition by CH 4 +Ar
More informationPlasma based modification of thin films and nanoparticles. Johannes Berndt, GREMI,Orléans
Plasma based modification of thin films and nanoparticles Johannes Berndt, GREMI,Orléans What is a plasma? A plasma is a ionized quasineutral gas! + electron electrons Neon bottle Ne atom Ne ion: Ne +
More informationSome more equations describing reactive magnetron sputtering.
Some more equations describing reactive magnetron sputtering D. Depla, S. Mahieu, W. Leroy, K. Van Aeken, J. Haemers, R. De Gryse www.draft.ugent.be discharge voltage (V) 44 4 36 32 28..5 1. 1.5 S (Pumping
More informationRepetition: Practical Aspects
Repetition: Practical Aspects Reduction of the Cathode Dark Space! E x 0 Geometric limit of the extension of a sputter plant. Lowest distance between target and substrate V Cathode (Target/Source) - +
More information1. INTRODUCTION 2. EXPERIMENTAL SET-UP CHARACTERIZATION OF A TUBULAR PLASMA REACTOR WITH EXTERNAL ANNULAR ELECTRODES
Romanian Reports in Physics, Vol. 57, No. 3, P. 390-395, 2005 CHARACTERIZATION OF A TUBULAR PLASMA REACTOR WITH EXTERNAL ANNULAR ELECTRODES C. PETCU, B. MITU, G. DINESCU National Institute for Lasers,
More informationMICROCHIP MANUFACTURING by S. Wolf
by S. Wolf Chapter 15 ALUMINUM THIN-FILMS and SPUTTER-DEPOSITION 2004 by LATTICE PRESS CHAPTER 15 - CONTENTS Aluminum Thin-Films Sputter-Deposition Process Steps Physics of Sputter-Deposition Magnetron-Sputtering
More informationPlasma processes under low and atmospheric pressure.
Plasma processes under low and atmospheric pressure. O.Kylián, J. Hanuš, A. Choukourov, J. Kousal, A. Kuzminova, P. Solar, A. Shelemin, H. Biederman Charles University in Prague Faculty of Mathematics
More informationLecture 6 Plasmas. Chapters 10 &16 Wolf and Tauber. ECE611 / CHE611 Electronic Materials Processing Fall John Labram 1/68
Lecture 6 Plasmas Chapters 10 &16 Wolf and Tauber 1/68 Announcements Homework: Homework will be returned to you on Thursday (12 th October). Solutions will be also posted online on Thursday (12 th October)
More informationThe Benefit of Wide Energy Range Spectrum Acquisition During Sputter Depth Profile Measurements
The Benefit of Wide Energy Range Spectrum Acquisition During Sputter Depth Profile Measurements Uwe Scheithauer, 82008 Unterhaching, Germany E-Mail: scht.uhg@googlemail.com Internet: orcid.org/0000-0002-4776-0678;
More informationRGA modelling and simulation to include pressure dependence in the ion source
RGA modelling and simulation to include pressure dependence in the ion source Jeyan Sreekumar, Boris Brkic, Tom Hogan and Steve Taylor Mass Spectrometry Group Department of Electrical Engineering and Electronics
More informationChapter 7 Plasma Basic
Chapter 7 Plasma Basic Hong Xiao, Ph. D. hxiao89@hotmail.com www2.austin.cc.tx.us/hongxiao/book.htm Hong Xiao, Ph. D. www2.austin.cc.tx.us/hongxiao/book.htm 1 Objectives List at least three IC processes
More informationApplication of Rarefied Flow & Plasma Simulation Software
2016/5/18 Application of Rarefied Flow & Plasma Simulation Software Yokohama City in Japan Profile of Wave Front Co., Ltd. Name : Wave Front Co., Ltd. Incorporation : March 1990 Head Office : Yokohama
More informationSPUTTER-WIND HEATING IN IONIZED METAL PVD+
SPUTTER-WIND HEATING IN IONIZED METAL PVD+ Junqing Lu* and Mark Kushner** *Department of Mechanical and Industrial Engineering **Department of Electrical and Computer Engineering University of Illinois
More informationIntroduction to Thin Film Processing
Introduction to Thin Film Processing Deposition Methods Many diverse techniques available Typically based on three different methods for providing a flux of atomic or molecular material Evaporation Sputtering
More informationChapter 7. Plasma Basics
Chapter 7 Plasma Basics 2006/4/12 1 Objectives List at least three IC processes using plasma Name three important collisions in plasma Describe mean free path Explain how plasma enhance etch and CVD processes
More informationSTRONG DOUBLE LAYER STRUCTURE IN THERMIONIC VACUUM ARC PLASMA *
STRONG DOUBLE LAYER STRUCTURE IN THERMIONIC VACUUM ARC PLASMA * V. TIRON 1, L. MIHAESCU 1, C.P. LUNGU 2 and G. POPA 1 1 Faculty of Physics, Al. I. Cuza University, 700506, Iasi, Romania 2 National Institute
More informationJune 5, 2012: Did you miss it? No Problem. Next chance in Venus in Front of the Sun and there is more: plasma imaging!
July 18 20, 2012 5th Int. Workshop on "Thin Films Applied To Superconducting RF And New Ideas For Pushing The Limits Of RF Superconductivity" Jefferson Lab, VA Strong localization of ionization in high
More informationProportional Counters
Proportional Counters 3 1 Introduction 3 2 Before we can look at individual radiation processes, we need to understand how the radiation is detected: Non-imaging detectors Detectors capable of detecting
More informationLECTURE 5 SUMMARY OF KEY IDEAS
LECTURE 5 SUMMARY OF KEY IDEAS Etching is a processing step following lithography: it transfers a circuit image from the photoresist to materials form which devices are made or to hard masking or sacrificial
More informationSection 5: Thin Film Deposition part 1 : sputtering and evaporation. Jaeger Chapter 6. EE143 Ali Javey
Section 5: Thin Film Deposition part 1 : sputtering and evaporation Jaeger Chapter 6 Vacuum Basics 1. Units 1 atmosphere = 760 torr = 1.013x10 5 Pa 1 bar = 10 5 Pa = 750 torr 1 torr = 1 mm Hg 1 mtorr =
More informationCombinatorial RF Magnetron Sputtering for Rapid Materials Discovery: Methodology and Applications
Combinatorial RF Magnetron Sputtering for Rapid Materials Discovery: Methodology and Applications Philip D. Rack,, Jason D. Fowlkes,, and Yuepeng Deng Department of Materials Science and Engineering University
More informationElectrical Discharges Characterization of Planar Sputtering System
International Journal of Recent Research and Review, Vol. V, March 213 ISSN 2277 8322 Electrical Discharges Characterization of Planar Sputtering System Bahaa T. Chaid 1, Nathera Abass Ali Al-Tememee 2,
More informationMeasurement of electron energy distribution function in an argon/copper plasma for ionized physical vapor deposition
Measurement of electron energy distribution function in an argon/copper plasma for ionized physical vapor deposition Z. C. Lu, J. E. Foster, T. G. Snodgrass, J. H. Booske, and A. E. Wendt a) Engineering
More informationSimulation of Metal TRAnport. SIMTRA : a tool to predict and understand deposition. K. Van Aeken, S. Mahieu, D. Depla.
Simulation of Metal TRAnport SIMTRA : a tool to predict and understand deposition K. Van Aeken, S. Mahieu, D. Depla www.draft.ugent.be 1) : Why do we calculate? ) Scientific background : How do we calculate?
More informationPlasma-Surface Interactions and Impact on Electron Energy Distribution Function
Plasma-Surface Interactions and Impact on Electron Energy Distribution Function N. Fox-Lyon(a), N. Ning(b), D.B. Graves(b), V. Godyak(c) and G.S. Oehrlein(a) (a) University of Maryland, College Park (b)
More informationPlasmonic Hot Hole Generation by Interband Transition in Gold-Polyaniline
Supplementary Information Plasmonic Hot Hole Generation by Interband Transition in Gold-Polyaniline Tapan Barman, Amreen A. Hussain, Bikash Sharma, Arup R. Pal* Plasma Nanotech Lab, Physical Sciences Division,
More informationSupplementary Figure 1 Detailed illustration on the fabrication process of templatestripped
Supplementary Figure 1 Detailed illustration on the fabrication process of templatestripped gold substrate. (a) Spin coating of hydrogen silsesquioxane (HSQ) resist onto the silicon substrate with a thickness
More informationThe effect of the chamber wall on fluorocarbonassisted atomic layer etching of SiO 2 using cyclic Ar/C 4 F 8 plasma
The effect of the chamber wall on fluorocarbonassisted atomic layer etching of SiO 2 using cyclic Ar/C 4 F 8 plasma Running title: The effect of the chamber wall on FC assisted atomic layer etching of
More informationPIC/MCC Simulation of Radio Frequency Hollow Cathode Discharge in Nitrogen
PIC/MCC Simulation of Radio Frequency Hollow Cathode Discharge in Nitrogen HAN Qing ( ), WANG Jing ( ), ZHANG Lianzhu ( ) College of Physics Science and Information Engineering, Hebei Normal University,
More informationFINAL REPORT. DOE Grant DE-FG03-87ER13727
FINAL REPORT DOE Grant DE-FG03-87ER13727 Dynamics of Electronegative Plasmas for Materials Processing Allan J. Lichtenberg and Michael A. Lieberman Department of Electrical Engineering and Computer Sciences
More informationUltra-High Vacuum Technology. Sputter Ion Pumps l/s
Ultra-High Vacuum Technology 30-400 l/s 181.06.01 Excerpt from the Product Chapter C15 Edition November 2007 Contents General General..........................................................................
More informationReduced preferential sputtering of TiO 2 (and Ta 2 O 5 ) thin films through argon cluster ion bombardment.
NATIOMEM Reduced preferential sputtering of TiO 2 (and Ta 2 O 5 ) thin films through argon cluster ion bombardment. R. Grilli *, P. Mack, M.A. Baker * * University of Surrey, UK ThermoFisher Scientific
More informationSPECTRAL INVESTIGATION OF A COMPLEX SPACE CHARGE STRUCTURE IN PLASMA
SPECTRAL INVESTIGATION OF A COMPLEX SPACE CHARGE STRUCTURE IN PLASMA S. GURLUI 1, D. G. DIMITRIU 1, C. IONITA 2, R. W. SCHRITTWIESER 2 1 Faculty of Physics, Al. I. Cuza University, 11 Carol I Blvd., RO-700506
More informationWe are IntechOpen, the world s leading publisher of Open Access books Built by scientists, for scientists. International authors and editors
We are IntechOpen, the world s leading publisher of Open Access books Built by scientists, for scientists 3,9 116, 12M Open access books available International authors and editors Downloads Our authors
More informationSimulation of the cathode surface damages in a HOPFED during ion bombardment
Simulation of the cathode surface damages in a HOPFED during ion bombardment Hongping Zhao, Wei Lei, a Xiaobing Zhang, Xiaohua Li, and Qilong Wang Department of Electronic Engineering, Southeast University,
More informationLecture 22 Ion Beam Techniques
Lecture 22 Ion Beam Techniques Schroder: Chapter 11.3 1/44 Announcements Homework 6/6: Will be online on later today. Due Wednesday June 6th at 10:00am. I will return it at the final exam (14 th June).
More informationSolutions for Assignment-6
Solutions for Assignment-6 Q1. What is the aim of thin film deposition? [1] (a) To maintain surface uniformity (b) To reduce the amount (or mass) of light absorbing materials (c) To decrease the weight
More informationModelling of the Target Voltage Behaviour in Reactive Sputtering R. De Gryse*, D. Depla University Ghent, Krijgslaan 281/S1, B-9000 GENT, Belgium
Modelling of the Target Voltage Behaviour in Reactive Sputtering R. De Gryse*, D. Depla University Ghent, Krijgslaan 28/S, B-9 GENT, Belgium Abstract It has been shown that at least two mechanisms are
More informationContents: 1) IEC and Helicon 2) What is HIIPER? 3) Analysis of Helicon 4) Coupling of the Helicon and the IEC 5) Conclusions 6) Acknowledgments
Contents: 1) IEC and Helicon 2) What is HIIPER? 3) Analysis of Helicon 4) Coupling of the Helicon and the IEC 5) Conclusions 6) Acknowledgments IEC:! IEC at UIUC modified into a space thruster.! IEC has
More informationAtmospheric pressure Plasma Enhanced CVD for large area deposition of TiO 2-x electron transport layers for PV. Heather M. Yates
Atmospheric pressure Plasma Enhanced CVD for large area deposition of TiO 2-x electron transport layers for PV Heather M. Yates Why the interest? Perovskite solar cells have shown considerable promise
More informationMetal Deposition. Filament Evaporation E-beam Evaporation Sputter Deposition
Metal Deposition Filament Evaporation E-beam Evaporation Sputter Deposition 1 Filament evaporation metals are raised to their melting point by resistive heating under vacuum metal pellets are placed on
More informationReport on Visit to Ruhr University Bochum by International Training Program From October 1st to November 29th 2010
Report on Visit to Ruhr University Bochum by International Training Program From October 1st to November 29th 2010 Graduate school of Engineering, Hori-Sekine Lab. Doctor course student Yusuke Abe Ruhr
More informationTMT4320 Nanomaterials November 10 th, Thin films by physical/chemical methods (From chapter 24 and 25)
1 TMT4320 Nanomaterials November 10 th, 2015 Thin films by physical/chemical methods (From chapter 24 and 25) 2 Thin films by physical/chemical methods Vapor-phase growth (compared to liquid-phase growth)
More informationSong Fengqi, Zhang Lu, Zhu Lianzhong, Ge Jun, Wang Guanghou *
Low energy cluster beam deposited BN films as the cascade for Field Emission 一 Song Fengqi, Zhang Lu, Zhu Lianzhong, Ge Jun, Wang Guanghou * National laboratory of Solid State Microstructures, Department
More informationhttp://www.diva-portal.org This is the published version of a paper presented at Invited talk: 12th International Symposium on Sputtering and Plasma Processes, Kyoto, July 10-12, 2013. Citation for the
More informationARGON EXCIMER LAMP. A. Sobottka, L. Prager, L. Drößler, M. Lenk. Leibniz Institute of Surface Modification
ARGON EXCIMER LAMP A. Sobottka, L. Prager, L. Drößler, M. Lenk 1 Introduction Ar-Zufuhr Excimer-Plasma Inertisierung Polymerfolie Sintermetall Inertisierung Post curing [1] EP 1050395 A2 2 Introduction
More informationTHE PROPERTIES OF THIN FILM DIELECTRIC LAYERS PREPARED BY SPUTTERING
THE PROPERTIES OF THIN FILM DIELECTRIC LAYERS PREPARED BY SPUTTERING Ivana BESHAJOVÁ PELIKÁNOVÁ a, Libor VALENTA a a KATEDRA ELEKTROTECHNOLOGIE, ČVUT FEL, Technická 2, 166 27 Praha 6, Česká republika,
More informationModification of thin films and nanoparticles. Johannes Berndt, GREMI,Orléans
Modification of thin films and nanoparticles Johannes Berndt, GREMI,Orléans Low temperature plasmas not fully ionized Ionization degree 10-6 10-4 far away from thermodynamic equlilibrium T electron >>
More informationA Kinetic Theory of Planar Plasma Sheaths Surrounding Electron Emitting Surfaces
A Kinetic Theory of Planar Plasma Sheaths Surrounding Electron Emitting Surfaces J. P. Sheehan1, I. Kaganovich2, E. Barnat3, B. Weatherford3, H. Wang2, 4 1 2 D. Sydorenko, N. Hershkowitz, and Y. Raitses
More informationThe use of MIM tunnel junctions to investigate kinetic electron excitation in atomic collision cascades
Nuclear Instruments and Methods in Physics Research B 230 (2005) 608 612 www.elsevier.com/locate/nimb The use of MIM tunnel junctions to investigate kinetic electron excitation in atomic collision cascades
More informationarxiv: v1 [physics.plasm-ph] 10 Nov 2014
arxiv:1411.2464v1 [physics.plasm-ph] 10 Nov 2014 Effects of fast atoms and energy-dependent secondary electron emission yields in PIC/MCC simulations of capacitively coupled plasmas A. Derzsi 1, I. Korolov
More informationLaser matter interaction
Laser matter interaction PH413 Lasers & Photonics Lecture 26 Why study laser matter interaction? Fundamental physics Chemical analysis Material processing Biomedical applications Deposition of novel structures
More informationIs plasma important? Influence molecule formation?
Is plasma important? Influence molecule formation? Plasma Structure (space & time) Influence? Daan Schram Eindhoven University of Technology d.c.schram@tue.nl http://www.tue.nl/en/employee/ep/e/d/ep-uid/19780797/?no_cache=1&chash=e23e831cf0c6bebeac6023f04dd3c4b6
More informationM. Audronis 1 and F. Zimone 2 1. Nova Fabrica Ltd. 1. Angstrom Sciences Inc.
M. Audronis 1 and F. Zimone 2 1 Nova Fabrica Ltd. 1 Angstrom Sciences Inc. Email: info@novafabrica.biz 1 Founded in 2013 the company is based in Lithuania (northern EU). NF are involved in two business
More informationMatti Laan Gas Discharge Laboratory University of Tartu ESTONIA
Matti Laan Gas Discharge Laboratory University of Tartu ESTONIA Outline 1. Ionisation 2. Plasma definition 3. Plasma properties 4. Plasma classification 5. Energy transfer in non-equilibrium plasma 6.
More informationK. Takechi a) and M. A. Lieberman Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720
JOURNAL OF APPLIED PHYSICS VOLUME 90, NUMBER 7 1 OCTOBER 2001 Effect of Ar addition to an O 2 plasma in an inductively coupled, traveling wave driven, large area plasma source: O 2 ÕAr mixture plasma modeling
More informationPlasma Deposition (Overview) Lecture 1
Plasma Deposition (Overview) Lecture 1 Material Processes Plasma Processing Plasma-assisted Deposition Implantation Surface Modification Development of Plasma-based processing Microelectronics needs (fabrication
More informationThin and Ultrathin Plasma Polymer Films and Their Characterization
WDS'13 Proceedings of Contributed Papers, Part III, 134 138, 2013. ISBN 978-80-7378-252-8 MATFYZPRESS Thin and Ultrathin Plasma Polymer Films and Their Characterization M. Petr, O. Kylián, J. Hanuš, A.
More informationChapter 5: Nanoparticle Production from Cathode Sputtering. in High-Pressure Microhollow Cathode and Arc Discharges
96 Chapter 5: Nanoparticle Production from Cathode Sputtering in High-Pressure Microhollow Cathode and Arc Discharges 5.1. Introduction Sputtering is a fundamental aspect of plasma operation and has been
More informationPIC-MCC simulations for complex plasmas
GRADUATE SUMMER INSTITUTE "Complex Plasmas August 4, 008 PIC-MCC simulations for complex plasmas Irina Schweigert Institute of Theoretical and Applied Mechanics, SB RAS, Novosibirsk Outline GRADUATE SUMMER
More informationAMS MEASUREMENTS OF DEUTERIUM CAPTURED IN TUNGSTEN LAYERS DEPOSITED BY MAGNETRON SPUTTERING
Romanian Reports in Physics, Vol. 65, No. 4, P. 1258 1264, 2013 AMS MEASUREMENTS OF DEUTERIUM CAPTURED IN TUNGSTEN LAYERS DEPOSITED BY MAGNETRON SPUTTERING A.R. PETRE 1,3, T. ACSENTE 2, M. ENACHESCU 1,
More informationNova 600 NanoLab Dual beam Focused Ion Beam IITKanpur
Nova 600 NanoLab Dual beam Focused Ion Beam system @ IITKanpur Dual Beam Nova 600 Nano Lab From FEI company (Dual Beam = SEM + FIB) SEM: The Electron Beam for SEM Field Emission Electron Gun Energy : 500
More informationElectron cyclotron resonance plasma enhanced direct current sputtering discharge with magnetic-mirror plasma confinement
Electron cyclotron resonance plasma enhanced direct current sputtering discharge with magnetic-mirror plasma confinement M. Mišina, a) Y. Setsuhara, and S. Miyake Joining and Welding Research Institute,
More informationSupporting Information for: Electrical probing and tuning of molecular. physisorption on graphene
Supporting Information for: Electrical probing and tuning of molecular physisorption on graphene Girish S. Kulkarni, Karthik Reddy #, Wenzhe Zang, Kyunghoon Lee, Xudong Fan *, and Zhaohui Zhong * Department
More informationHelium effects on Tungsten surface morphology and Deuterium retention
1 Helium effects on Tungsten surface morphology and Deuterium retention Y. Ueda, H.Y. Peng, H. T. Lee (Osaka University) N. Ohno, S. Kajita (Nagoya University) N. Yoshida (Kyushu University) R. Doerner
More informationRadio-Frequency Spectrometry
ANALYTICAL SCIENCES JUNE 1996, VOL. 12 459 Effects Argon of Helium Addition to Glow-Discharge Mass Radio-Frequency Spectrometry Jin-Chun WOOL*, Dong-Min MooN*, Tomokazu TANAKA**, Motoya MATSUNO** and Hiroshi
More informationExploration into Sputtered ITO Film Properties as a Function of Magnetic Field Strength
Tangential Magnetic Flux, Gauss Exploration into Sputtered ITO Film Properties as a Function of Magnetic Field Strength Patrick Morse and Timmy Strait Sputtering Components Inc. Owatonna Minnesota ABSTRACT
More informationAtomic layer deposition of titanium nitride
Atomic layer deposition of titanium nitride Jue Yue,version4, 04/26/2015 Introduction Titanium nitride is a hard and metallic material which has found many applications, e.g.as a wear resistant coating[1],
More informationPRINCIPLES OF PLASMA DISCHARGES AND MATERIALS PROCESSING
PRINCIPLES OF PLASMA DISCHARGES AND MATERIALS PROCESSING Second Edition MICHAEL A. LIEBERMAN ALLAN J, LICHTENBERG WILEY- INTERSCIENCE A JOHN WILEY & SONS, INC PUBLICATION CONTENTS PREFACE xrrii PREFACE
More informationDEPOSITION AND COMPOSITION OF POLYMER FILMS IN FLUOROCARBON PLASMAS*
DEPOSITION AND COMPOSITION OF POLYMER FILMS IN FLUOROCARBON PLASMAS* Kapil Rajaraman and Mark J. Kushner 1406 W. Green St. Urbana, IL 61801 rajaramn@uiuc.edu mjk@uiuc.edu http://uigelz.ece.uiuc.edu November
More informationThe importance of the momentum flux on the mechanical properties of sputter deposited TiN thin films.
The importance of the momentum flux on the mechanical properties of sputter deposited TiN thin films. S. Mahieu and D. Depla Ghent University Partially Funded by the FWO-Flanders www.draft.ugent.be P.H.
More informationHuashun Zhang. Ion Sources. With 187 Figures and 26 Tables Э SCIENCE PRESS. Springer
Huashun Zhang Ion Sources With 187 Figures and 26 Tables Э SCIENCE PRESS Springer XI Contents 1 INTRODUCTION 1 1.1 Major Applications and Requirements 1 1.2 Performances and Research Subjects 1 1.3 Historical
More informationSecondary ion mass spectrometry (SIMS)
Secondary ion mass spectrometry (SIMS) Lasse Vines 1 Secondary ion mass spectrometry O Zn 10000 O 2 Counts/sec 1000 100 Li Na K Cr ZnO 10 ZnO 2 1 0 20 40 60 80 100 Mass (AMU) 10 21 10 20 Si 07 Ge 0.3 Atomic
More informationEstimating the plasma flow in a recombining plasma from
Paper P3-38 Estimating the plasma flow in a recombining plasma from the H α emission U. Wenzel a, M. Goto b a Max-Planck-Institut für Plasmaphysik (IPP) b National Institute for Fusion Science, Toki 509-5292,
More informationARGON RF PLASMA TREATMENT OF PET FILMS FOR SILICON FILMS ADHESION IMPROVEMENT
Journal of Optoelectronics and Advanced Materials Vol. 7, No. 5, October 2005, p. 2529-2534 ARGON RF PLASMA TREATMENT OF FILMS FOR SILICON FILMS ADHESION IMPROVEMENT I. A. Rusu *, G. Popa, S. O. Saied
More informationSpecial Properties of Au Nanoparticles
Special Properties of Au Nanoparticles Maryam Ebrahimi Chem 7500/750 March 28 th, 2007 1 Outline Introduction The importance of unexpected electronic, geometric, and chemical properties of nanoparticles
More information3.155J/6.152J Microelectronic Processing Technology Fall Term, 2004
3.155J/6.152J Microelectronic Processing Technology Fall Term, 2004 Bob O'Handley Martin Schmidt Quiz Nov. 17, 2004 Ion implantation, diffusion [15] 1. a) Two identical p-type Si wafers (N a = 10 17 cm
More information