ACADEMIC QUALIFICATIONS
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1 Curriculum vitae Name: Haji Shirinzadeh Fathers Name: Aghajare Date of Birth: 29 Dec 1957 Nationality: Iranian Marital Status: Marred Permanent Address: 46 (A) Zibasher, Ahwaz. IRAN Phone numbers (IR) or Correspondences: Materials and Energy Research Center (MERC) Ministry of Science and Research Technology Semiconductor Division, Tel: (+98) , , Fax: (+98) Mobil: http: www. Passport No: H Date of Issue: Date of Expire: ACADEMIC QUALIFICATIONS Degree Year Subject (S) % Of Marks University / Institute B.Sc PCM 64.00% Barkatullah (India) Uni.Bhopal M.Sc Electronic 62.45% Barkatullah (India) Physics Univ.Bhopal PG.Com Bas,For,Pas,WS 71.00% C.C.I. (India) Science Ph.D. (Physics) Dbase 1999 Microstructure of Magnetic films by MBE system At Delhi University. & National Physical Laboratory (NPL). New Delhi. (India) Postdoctoral Fellowship (PDF) 2002 Studies of semiconductor from III-V, II-VI and IV-VI materials At Semiconductor Science and Quantum-Functional Semiconductor Research Center (QSRC) at Dongguk University 26, 3-ga Pildong Junggu Seoul, Korea, Additional Qualification in Computers Languages Basic, Fortran, Pascal, Turbo Pascal, C++ 1
2 Software s Systems Software Development Operation system Hardware Exposure MS-Windows, Ms-Word, WordStar, Lotus123, Ms-Excel, PageMaker, Windows-98, AutoCAD Pentium, Commercial Consultants (I) MS-DOS, UNIX, LAN Micro system Experience. Multi-user leave system (A) Mahaveer Computer Center Bhopal University & T.T.T.I National Physical Laboratory, NewDelhi (India) Current University: Materials and Energy Research Center (MERC) Current Faculty: Semiconductors Current Department: Physics Specialization: Fabrication of GMR and CMR materials by MBE, EBE and LPE and Characterization by RHEED, AES, SIMS also Semiconductor thin films, Present Position: Working as Asst. Professor, on semiconductor from II-VI and IV-VI for "Fabrication and Characterization of New Ferroelectrics materials thin films for FRAM " at, Materials and Energy Research Center (MERC) I am working on the topic Research Experience 1. Experience in a Modified Molecular Beam Epitaxy system (MBE) used for preparation of thin films of Colossal magnetoresistive La1-X Mx MnO3 (M = Sr,Ca,Ba; x = ) system. Microprobe reflection high-energy electron diffraction (RHEED) is used for surface and monitors the crystallographic details. 2. Auger electron spectroscopy (AES) is used for surface analysing and depth profiling too, 3. Secondary ion mass spectroscopy (SIMS) is used for determination of the chemical composition of the outermost atomic layer of the grown structure which could be compared to AES; the main advantages of SIMS are high absolute sensitivity for many elements and high mass resolutions, 2
3 The Quadruple mass spectrometer included in the SIMS system also utilized for effective diagnostics of the ambient gas in the deposition chamber. Scanning electron microscopy (SEM) is used for displaying the structure of the film surface. All of the above analytical techniques are postgrowth in-situ techniques, they give important information about surfaces of films grown with MBE. Study of Physical characteristics which are key for exploitation these complex perovskites. Optimising the growth of thin films and controlling cation doping and controlling oxygen stoichiomertry has been tried. And subsequent annealing treatments could significantly change the magnetic and transport behaviour of colossal magnetoresistive (CMR) material as well as microstructure. In order to examine the grain boundaries of series of thin films (LaxSrxMnO3 )samples SEM and TEM studies have been carried out. Giant magnetoresistive (GMR) thin films Co/Cu/Co sandwiches prepared on single crystalline oriented Silicon Si (111) substrate. The thickness of the Cu and Co layer varied by 10. thickا ا The GMR effect falls off very slowly with increasing separation of the ferromagnetic layers. For Cu layer upto 12, thickا the coupling between two Co layer is antiferromagnetic which can be transferred to ferromagnetic by an applied field. The films are irradiated with protons generated by pelletron. I have studied the distortion of the lattice as a result of irradiation and its impact on the magnetoresistive property of GMR and material La1-x Srx MnO3 (CMR) thin films. It has been noticed that upto a dosage limit of ~10 13 ions/cm2 for highest fluence (5x1015ions/cm2), there is an improvement in magnetoresistivity beyond which the sample condition gets deteriorated to exhibit semiconducting behavior. Brief Research Plan : Study of Ferroelectrics on base of IV-VI semiconductors and motivation of research object; the physical properties of narrow gap IV-VI semiconductors and the influence of disorder produce by defects and impurities on phase transitions Study of new ferroelectrics phase transition in ternary and quaternary solid solutions of IV-VI semiconductor and role of off-center ions that is play important in the appearance of Ferro electricity in the phase crystals, etc. in thin films from- and other strongly correlated systems and development of analytical model in order to gain deeper insight regarding different exotic behaviors of these materials which would help in maneuvering them to suit requisite purposes. 3
4 References 1. Prof. Shavkat Yuldashev Academe of Science Tashkent, Uzbekistan (Visiting professor) In Quantum functional semiconductor research center (QSRC) at Dogguk University, Seoul. South Korea. or Tell Fax: Dr. Dipten Bhattacharya (Scientist) Cryogenic Division, National Physical Laboratory (NPL) Dr.K.S.Krishnan Marg. New Delhi , India Ph.No: , Ext dipten@csnpl.ren.nic.in 3. Prof. Shahnawaz Dept. Physics and Astrophysics University of Delhi, New Delhi INDIA 4. Dr. V.S. Tomar, (Scientist) Joseph Voltage and SQUID Division, National Physical Laboratory New Delhi, INDIA. Ph.No ,Ext Tomar@csnpl.ren.nic.in Publications Papers Presentation at conferences & seminars and Journals 1. Properties of Magnetic Multi-layers Fifteenth National Symposium on cryogenics National Physical Laboratory, New Delhi Studies of Giant Magneto-resistance Sixteenth National Symposium on cryogenics (SNSC-97) Indian Institute Of Technology, Kharagpur Motivation for electronic Irradiation 4
5 Nuclear Science Center (NSC) New Delhi 1998 (INDIA). 4. Colossal magnetoresistance in La-Sr-MnO3 irradiated with 28MeV Proton Advance in Superconductivity and its Application in Microwave (ASAM-98) Dept of Physics & Astrophysics, University of Delhi 1998 (INDIA) 5. Magnetization in magnetic multilayer Co/Cu system irradiated with 28MeV Proton. Department of atomic energy (DAE) Solid State Physics Symposium Kurukshetra University, Kurukshetra 1998 (INDIA) 6. Magnetization in magnetic multilayer Co/Cu system irradiated with 28MeV Proton. Topical Conference on Microstructure and surface Morphology Evolution in thin films The Abduls Salam International Center for theoretical physics (ICTP) Trieste (Italy) Giant magnetoresistance in magnetic multilayer Co/Cu system irradiated with 28MeV Proton, First Region Conference Magnetism, and Superconducting material (MSM-99) Sharif University of Technology Tehran, (IRAN) Structural and Magnetic properties of Fe/Cu multilayer films with varying Cu Layer. Shahnawaz, H.Szadeh, V.S.Tomar, Present in Dept.of Atomic Energy (DAE). Oct 6-8,1999. DAE-BRNS Workshop on thin film multilayer. 9. Studies on percolation in Y-Ba-Cu-O and Bi-Pb-Sr-Ca-Cu-O systems D.Mishra, H.S.zadeh, Presented in international Conference Magnetic superconductor materials,usa. J. Phys C. Feb 22 (2000). 10. The interlayer exchange coupling through copper layer in giant magnetoresistance mnltilayers by MBE grown mnltilayer. H.Szadeh, V.S.Tomar, Shahnawaz. J.mat.Sc.feb 25, Giant magnetoresistance and oscillations in interlayer exchange coupling in Co/Cu/Co multilayers. H.Szadeh, V.S.Tomar, Shahnawaz. Jmat.Sc.April 18, The irradiation effect on microstructur and CMR on La(Sr)MnO 3 the film grown by MBE. H.S zadeh, V. S. Tomar, Shahnawaz. J.mat.Sc.Feb 25, The phenomenon of CMR and some experimental results. H.S.zadeh, V.S.Tomar, Shahnawaz J. Physical Review. April 3,2000. Commutated PAPERS ON SEMICONDUCTORS MATERIALS UNDER COMMUTATION 14. DLTS in a two-dimensional electron gas system formed by an AlGaN/GaN heterojunction H. C. Jeon, H.S.zadeh, Y. S. Jeong, J. H. Na, S. S. Man, H. S. Lee, C. J. Park, Y. S. Park, H. Y. Cho, T. W. Kang (Dongguk university), 5
6 15. Studies of electrical properties of ferromagnetic III-V semiconductors H.S.zadeh, T.W.Kang, (2002-3) 16. Study of X-Ray microanalysis beveling technique with high depth resolution SIMS on AlGaN/GaN system H. S. Zadeh, H. C. Jeon, T. W. Kang (2002-3) Quantum Functional Semiconductor Research Center, Dongguk University, Seoul. Korea 17. The experimental evidence of atomic resolution imaging of Ga 1-x Mn x As dilute magnetic semiconductor at lower concentration impurities grown by LPE. H. S. Zadeh, H. C. Jeon, T. W. Kang (2002-3) The above-mentioned all in formation is to best of my knowledge. Place: Materials and Energy Research Center (MERC) Date: 04/09/2007 (Haji Shirinzadeh) hszadeh@yahoo.com : hszade@csnpl.ren.nic.in > h_szadeh@dgu.ac.kr < hszadeh@hotmail.com h-szadeh@merc.ac.ir 6
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