September FC6N ual N-Channel, igital FET General escription These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild 's proprietary, high cell density, MOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, these N-Channel FET's can replace several digital transistors, with a variety of bias resistors. Features V, A continuous,. A Peak. R S(ON) = Ω @ V =.7 V R S(ON) = Ω @ V =. V. Very low level gate drive requirements allowing direct operation in V circuits. V (th) <.V. Gate-Source Zener for ES ruggedness. >6kV Human Body Model. SOT- SuperSOT TM -6 SuperSOT TM -8 SO-8 SOT- SOIC-6 Mark:. INVERTER APPLICATION Vcc OUT 6 IN G S GN Absolute Maximum Ratings T A = o C unless other wise noted Symbol Parameter FC6N Units V SS, V CC rain-source Voltage, Power Supply Voltage V V S, V IN Gate-Source Voltage, V IN -. to +8 V I, I OUT rain/output Current - Continuous A - Pulsed. P Maximum Power issipation (Note a) (Note b).9 W.7,T STG Operating and Storage Temperature Range - to C ES Electrostatic ischarge Rating MIL-ST-88 Human Body Model (pf / Ohm) 6. kv THERMAL CHARACTERISTICS R θja Thermal Resistance, Junction-to-Ambient (Note a) C/W R θjc Thermal Resistance, Junction-to-Case (Note ) 6 C/W Fairchild Semiconductor Corporation FC6N Rev.
Electrical Characteristics (T A = O C unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BV SS rain-source Breakdown Voltage V = V, I = µa V BV SS / Breakdown Voltage Temp. Coefficient I = µa, Referenced to o C mv / o C I SS Zero Gate Voltage rain Current V S = V, V = V µa = C µa I S Gate - Body Leakage Current V = 8 V, V S = V na ON CHARACTERISTICS (Note ) V (th) / Gate Threshold Voltage Temp.Coefficient I = µa, Referenced to o C -. mv / o C V (th) Gate Threshold Voltage V S = V, I = µa.6.8. V R S(ON) Static rain-source On-Resistance V =.7 V, I = A.8 Ω = C 6. 9 V =. V, I =. A. I (ON) On-State rain Current V =.7 V, V S = V A g FS Forward Transconductance V S = V, I =. A S YNAMIC CHARACTERISTICS C iss Input Capacitance V S = V, V = V, 9. pf C oss Output Capacitance f =. MHz 6 pf C rss Reverse Transfer Capacitance. pf SWITCHING CHARACTERISTICS (Note ) t (on) Turn - On elay Time V = 6 V, I =. A, ns t r Turn - On Rise Time V =. V, R GEN = Ω. ns t (off) Turn - Off elay Time 8 ns t f Turn - Off Fall Time. 7 ns Q g Total Gate Charge V S = V, I = A,.9.7 nc Q gs Gate-Source Charge V =. V nc Q gd Gate-rain Charge.7 nc Inverter Electrical Characteristics (T A = C unless otherwise noted) I O (off) Zero Input Voltage Output Current V CC = V, V I = V µa V I (off) Input Voltage V CC = V, I O = µa. V V I (on) V O =. V, I O =. A V R O (on) Output to Ground Resistance V I =.7 V, I O = A.8 Ω Notes:. R θja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θjc is guaranteed by design while R θca is determined by the user's board design. R θja shown below for single device operation on FR- in still air. a. O C/W on a in pad of oz copper. b. 8 O C/W on a. in of pad of oz copper.. Pulse Test: Pulse Width < µs, uty Cycle <.%. FC6N Rev.
S Typical Electrical Characteristics I, RAIN-SOURCE CURRENT (A).... V =.V...7 V, RAIN-SOURCE VOLTAGE (V) S... R S(on), NORMALIZE RAIN-SOURCE ON-RESISTANCE...8 V =.V..7.6...... I, RAIN CURRENT (A).. Figure. On-Region Characteristics. Figure. On-Resistance Variation with rain Current and Gate Voltage. R S(ON), NORMALIZE RAIN-SOURCE ON-RESISTANCE.8.6...8 I = A V =.7 V R S(on), ON-RESISTANCE (OHM) 9 6 C I = A C.6 - - 7 T, JUNCTION TEMPERATURE ( C) J... V, GATE TO SOURCE VOLTAGE (V) Figure. On-Resistance Variation with Temperature. Figure. On Resistance Variation with Gate-To- Source Voltage. I, RAIN CURRENT (A)... V =.V S T = - C J C C I, REVERSE RAIN CURRENT (A).... V = V T = C J C - C... V, GATE TO SOURCE VOLTAGE (V)...6.8. V, BOY IOE FORWAR VOLTAGE (V) S Figure. Transfer Characteristics. Figure 6. Body iode Forward Voltage Variation with Source Current and Temperature. FC6N Rev.
Typical Electrical Characteristics (continued) V, GATE-SOURCE VOLTAGE (V) I = A.....6 Q, GATE CHARGE (nc) g V S = V V V CAPACITANCE (pf) f = MHz V = V.. V, RAIN TO SOURCE VOLTAGE (V) S C iss C oss C rss Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. I, RAIN CURRENT (A).... RS(ON) LIMIT V =.7V SINGLE PULSE R θja =See note b T A = C.. C s V, RAI N-SOURCE VOLTAGE (V) S ms ms ms POWER (W).. SINGLE PULSE TIME (SEC) SINGLE PULSE R θja=see note b T A = C Figure 9. Maximum Safe Operating Area. Figure. Single Pulse Maximum Power issipation. r(t), NORMALIZE EFFECTIVE TRANSIENT THERMAL RESISTANCE.... =..... Single Pulse..... t, TIME (sec) P(pk) R θja (t) = r(t) * R θja R θja = See Note b t t - T = P * R (t) A θja uty Cycle, = t / t Figure. Transient Thermal Response Curve. Note: Thermal characterization performed using the conditions described in note b.transient thermal response will change depending on the circuit board design. FC6N Rev.
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