PD - 9757 IRLML000TRPbF HEXFET Power MOSFET V DS 00 V V GS Max ± 6 V G R DS(on) max (@V GS = 0V) 220 m: 3 D R DS(on) max (@V GS = 4.5V) 235 m: S 2 Micro3 TM (SOT-23) IRLML000TRPbF Application(s) Load/ System Switch Features and Benefits Features Industry-standard pinout ORDERING INFORMATION: See detailed ordering and shipping information on the last page of this data sheet. Benefits Multi-vendor compatibility Compatible with existing Surface Mount Techniques results in Easier manufacturing RoHS compliant containing no lead, no bromide and no halogen Environmentally friendly MSL Increased reliability Absolute Maximum Ratings Symbol Parameter Max. Units V DS Drain-Source Voltage 00 V I D @ T A = 25 C Continuous Drain Current, V GS @ 0V.6 I D @ T A = 70 C Continuous Drain Current, V GS @ 0V.3 A I DM Pulsed Drain Current 7.0 P D @T A = 25 C Maximum Power Dissipation.3 P D @T A = 70 C Maximum Power Dissipation 0.8 W Linear Derating Factor 0.0 W/ C V GS Gate-to-Source Voltage ± 6 V T J, T STG Junction and Storage Temperature Range -55 to + 50 C Thermal Resistance Symbol Parameter Typ. Max. Units R θja Junction-to-Ambient e 00 R θja Junction-to-Ambient (t<0s) f 99 Notes through are on page 0 www.irf.com C/W /24/09
IRLML000TRPbF Electric Characteristics @ T J = 25 C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V (BR)DSS Drain-to-Source Breakdown Voltage 00 V ΔV (BR)DSS /ΔT J Breakdown Voltage Temp. Coefficient 0.0 V/ C R DS(on) Static Drain-to-Source On-Resistance 90 235 78 220 mω V GS(th) Gate Threshold Voltage.0 2.5 V I DSS Drain-to-Source Leakage Current 20 µa 250 I GSS Gate-to-Source Forward Leakage 00 na Gate-to-Source Reverse Leakage -00 R G Internal Gate Resistance.3 Ω gfs Forward Transconductance 5.7 S Q g Total Gate Charge 2.5 Q gs Gate-to-Source Charge 0.5 nc Q gd Gate-to-Drain ("Miller") Charge.2 t d(on) Turn-On Delay Time 2.2 t r Rise Time 2. t d(off) Turn-Off Delay Time 9.0 ns t f Fall Time 3.6 C iss Input Capacitance 290 C oss Output Capacitance 27 pf C rss Reverse Transfer Capacitance 3 Source - Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units I S Continuous Source Current. I SM (Body Diode) A Pulsed Source Current 7.0 (Body Diode)Ãc V SD Diode Forward Voltage.3 V t rr Reverse Recovery Time 20 30 ns Q rr Reverse Recovery Charge 3 20 nc V GS = 0V, I D =.6A d V DS = V GS, I D = 25µA V DS =00V, V GS = 0V V DS = 00V, V GS = 0V, T J = 25 C V DD =50Vd Conditions V GS = 0V, I D = 250µA Reference to 25 C, I D = ma V GS = 4.5V, I D =.3A d V GS = 6V V GS = -6V V DS = 50V, I D =.6A I D =.6A V DS =50V V GS = 4.5V d I D =.0A R G = 6.8Ω V GS = 4.5V V GS = 0V V DS = 25V ƒ =.0MHz Conditions MOSFET symbol showing the integral reverse p-n junction diode. T J = 25 C, I S =.A, V GS = 0V d T J = 25 C, V R = 50V, I F =.A di/dt = 00A/µs d 2 www.irf.com
I D, Drain-to-Source Current (A) R DS(on), Drain-to-Source On Resistance (Normalized) I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) IRLML000TRPbF 00 0 60µs PULSE WIDTH Tj = 25 C VGS TOP 0.0V 4.50V 3.50V 3.30V 3.25V 2.50V 2.35V BOTTOM 2.25V 00 0 60µs PULSE WIDTH Tj = 50 C VGS TOP 0.0V 4.50V 3.50V 3.30V 3.25V 2.50V 2.35V BOTTOM 2.25V 0. 2.25V 2.25V 0.0 0. 0 00 V DS, Drain-to-Source Voltage (V) 0. 0. 0 00 V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics 0 2.5 I D =.6A V GS = 0V T J = 50 C 2.0.5 0. T J = 25 C.0 V DS = 50V 60µs PULSE WIDTH 0.0.5 2.0 2.5 3.0 3.5 V GS, Gate-to-Source Voltage (V) 0.5-60 -40-20 0 20 40 60 80 00 20 40 60 T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3
I SD, Reverse Drain Current (A) I D, Drain-to-Source Current (A) C, Capacitance (pf) V GS, Gate-to-Source Voltage (V) IRLML000TRPbF 0000 000 V GS = 0V, f = MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd 6 2 I D =.6A V DS = 80V V DS = 50V V DS = 20V C iss 00 C oss 8 0 C rss 4 0 00 V DS, Drain-to-Source Voltage (V) 0 0 2 3 4 5 6 7 Q G Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 00 00 OPERATION IN THIS AREA LIMITED BY R DS (on) 0 0 T J = 50 C 00µsec msec 0. T J = 25 C V GS = 0V 0.0 0.4 0.6 0.8.0 V SD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 0. T A = 25 C Tj = 50 C Single Pulse 0msec 0.0 0. 0 00 V DS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 4 www.irf.com
I D, Drain Current (A) IRLML000TRPbF 2.0 V DS R D.5 R G V GS D.U.T. + - V DD.0 V GS Pulse Width µs Duty Factor 0. % 0.5 Fig 0a. Switching Time Test Circuit 0.0 25 50 75 00 25 50 T A, Ambient Temperature ( C) V DS 90% Fig 9. Maximum Drain Current Vs. Ambient Temperature 0% V GS t d(on) t r t d(off) t f Fig 0b. Switching Time Waveforms 000 Thermal Response ( Z thja ) 00 0 D = 0.50 0.20 0.0 0.05 0.02 0.0 0. 0.0 SINGLE PULSE ( THERMAL RESPONSE ) E-006 E-005 0.000 0.00 0.0 0. 0 t, Rectangular Pulse Duration (sec) Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc + Tc Fig. Typical Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5
R DS(on), Drain-to -Source On Resistance (mω) R DS (on), Drain-to -Source On Resistance (mω) IRLML000TRPbF 600 550 I D =.6A 270 500 450 400 350 300 T J = 25 C 250 230 20 Vgs = 4.5V Vgs = 0V 250 200 T J = 25 C 90 50 2 4 6 8 0 70 0 2 4 6 8 V GS, Gate -to -Source Voltage (V) I D, Drain Current (A) Fig 2. Typical On-Resistance Vs. Gate Voltage Fig 3. Typical On-Resistance Vs. Drain Current Id Vds Vgs Vgs(th) 0 20K K D DUT L VCC Qgodr Qgd Qgs2 Qgs Fig 4a. Basic Gate Charge Waveform Fig 4b. Gate Charge Test Circuit 6 www.irf.com
V GS(th), Gate threshold Voltage (V) Power (W) IRLML000TRPbF 2.5 00 2.0 80 60.5 I D = 25uA I D = 250uA 40.0 20 0.5-75 -50-25 0 25 50 75 00 25 50 T J, Temperature ( C ) Fig 5. Typical Threshold Voltage Vs. Junction Temperature 0 E-005 0.000 0.00 0.0 0. 0 Time (sec) Fig 6. Typical Power Vs. Time www.irf.com 7
IRLML000TRPbF Micro3 (SOT-23) Package Outline Dimensions are shown in millimeters (inches) 5 6 B 6 A 5 D 3 E E 0.5 [0.006] M CBA 2 e e H 4 L c A A2 C 0.0 [0.004] C A 3X b 0.20 [0.008] M C B A NOTES: Recommended Footprint 0.972 DIMENSIONS SYMBOL MILLIMETERS INCHES MIN MAX MIN MAX A 0.89.2 A 0.0 0.0 0.0004 A2 0.88.02 b 0.30 0.50 c 0.08 0.20 D 2.80 3.04 E 2.0 2.64 E.20.40 e 0.95 BSC %6& e.90 BSC %6& L 0.40 0.60 L 0.54 REF REF L2 0.25 BSC BSC 0 8 0 8 L2 0.802 0.950 2.742 3X L 7.900. DIMENSIONING & TOLERANCING PER ANSI Y4.5M-994 2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 3. CONTROLLING DIMENSION: MILLIMETER. 4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE. 5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H. 6. DIMENSIONS D AND E ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.00 INCH] PER SIDE. 7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE. 8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB. Micro3 (SOT-23/TO-236AB) Part Marking Information Notes: This part marking information applies to devices produced after 02/26/200 PART NUMBER PART NUMBER CODE REFERENCE: A = IRLML2402 B = IRLML2803 C = IRLML6302 D = IRLML503 E = IRLML6402 F = IRLML640 G = IRLML2502 H = IRLML5203 I = IRLML0030 J = IRLML2030 K = IRLML000 L = IRLML0060 M = IRLML0040 N = IRLML2060 Note: A line above the work week (as shown here) indicates Lead - Free. Y = YEAR W = WEEK LOT CODE W = (-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR W = (27-52) IF PRECEDED BY A LETTER WORK YEAR Y WE EK W 200 A 27 A 2002 B 28 B 2003 C 29 C 2004 D 30 D 2005 E 2006 F 2007 G 2008 H 2009 J 200 K 50 X 5 Y 52 Z Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 8 www.irf.com YEAR Y 200 2002 2 2003 3 2004 4 2005 5 2006 6 2007 7 2008 8 2009 9 200 0 WORK WE EK W 0 A 02 B 03 C 04 D 24 25 26 X Y Z
IRLML000TRPbF Micro3 Tape & Reel Information Dimensions are shown in millimeters (inches) 2.05 (.080 ).95 (.077 ) 4. (.6 ) 3.9 (.54 ).6 (.062 ).5 (.060 ).85 (.072 ).65 (.065 ).32 (.05 ).2 (.045 ) TR 3.55 (.39 ) 3.45 (.36 ) 8.3 (.326 ) 7.9 (.32 ) FEED DIRECTION 4. (.6 ) 3.9 (.54 ). (.043 ) 0.9 (.036 ) 0.35 (.03 ) 0.25 (.00 ) 78.00 ( 7.008 ) MAX. 9.90 (.390 ) 8.40 (.33 ) NOTES:. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-48 & EIA-54. Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ www.irf.com 9
IRLML000TRPbF Orderable part number Package Type Standard Pack Form Quantity IRLML000TRPbF Micro3 Tape and Reel 3000 Note Qualification information Qualification level Moisture Sensitivity Level RoHS compliant Cons umer (per JEDEC JES D47F guidelines ) MS L Micro3 (per IPC/JE DEC J-S T D-020D ) Yes Qualification standards can be found at International Rectifier s web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400µs; duty cycle 2%. ƒ Surface mounted on in square Cu board Refer to application note #AN-994. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (30) 252-705 TAC Fax: (30) 252-7903 Visit us at www.irf.com for sales contact information./2009 0 www.irf.com