V DS 30 V V GS Max ± 20 V R DS(on) max (@V GS = V) R DS(on) max (@V GS = 4.5V) m: 54 m: G S PD - 97432 HEXFET Power MOSFET 2 3 D Micro3 TM (SOT-23) Application(s) Load/ System Switch Features and Benefits Features ORDERING INFORMATION: See detailed ordering and shipping information on the last page of this data sheet. Benefits Industry-standard pinout Multi-vendor compatibility Compatible with existing Surface Mount Techniques results in Easier manufacturing RoHS compliant containing no lead, no bromide and no halogen Environmentally friendly MSL Increased reliability Absolute Maximum Ratings Symbol Parameter Max. Units V DS Drain-Source Voltage 30 V I D @ T A = 25 C Continuous Drain Current, V GS @ V 2.7 I D @ T A = 70 C Continuous Drain Current, V GS @ V 2.2 A I DM Pulsed Drain Current P D @T A = 25 C Maximum Power Dissipation.3 P D @T A = 70 C Maximum Power Dissipation 0.8 W Linear Derating Factor 0.0 W/ C V GS Gate-to-Source Voltage ± 20 V T J, T STG Junction and Storage Temperature Range -55 to + 50 C Thermal Resistance Symbol Parameter Typ. Max. Units R θja Junction-to-Ambient e R θja Junction-to-Ambient (t<s) f 99 Notes through are on page www.irf.com C/W /4/09
Electric Characteristics @ T J = 25 C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V (BR)DSS Drain-to-Source Breakdown Voltage 30 V ΔV (BR)DSS /ΔT J Breakdown Voltage Temp. Coefficient 0.03 V/ C R DS(on) Static Drain-to-Source On-Resistance 23 54 80 mω V GS(th) Gate Threshold Voltage.3.7 2.3 V I DSS Drain-to-Source Leakage Current μa 50 I GSS Gate-to-Source Forward Leakage na Gate-to-Source Reverse Leakage - R G Internal Gate Resistance 7.6 Ω gfs Forward Transconductance 2.6 S Q g Total Gate Charge.0 Q gs Gate-to-Source Charge 0.34 nc Q gd Gate-to-Drain ("Miller") Charge 0.34 t d(on) Turn-On Delay Time 4. t r Rise Time 3.3 t d(off) Turn-Off Delay Time 4.5 ns t f Fall Time 2.9 C iss Input Capacitance C oss Output Capacitance 29 pf C rss Reverse Transfer Capacitance 2 Source - Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units V GS = 20V V GS = -20V V DS = V, I D = 2.7A I D = 2.7A V DS =5V V GS = 4.5V d I D =.0A R G = 6.8Ω V GS = 4.5V V GS = 0V V DS = 5V ƒ =.0MHz Conditions V GS = 0V, I D = 250μA Reference to 25 C, I D = ma V GS = 4.5V, I D = 2.2A d V GS = V, I D = 2.7A d V DS = V GS, I D = 25μA V DS =24V, V GS = 0V V DS = 24V, V GS = 0V, T J = 25 C V DD =5Vd Conditions I S Continuous Source Current.6 MOSFET symbol I SM (Body Diode) showing the A Pulsed Source Current integral reverse (Body Diode)Ãc p-n junction diode. V SD Diode Forward Voltage.0 V T J = 25 C, I S = 2.7A, V GS = 0V d t rr Reverse Recovery Time 9.0 4 ns T J = 25 C, V R = 5V, I F =2.7A Q rr Reverse Recovery Charge 0.3 0.4 nc di/dt = A/μs d 2 www.irf.com
I D, Drain-to-Source Current (A) R DS(on), Drain-to-Source On Resistance (Normalized) I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) 60μs PULSE WIDTH Tj = 25 C VGS TOP.0V 8.00V 4.50V 3.50V 3.25V 3.00V 2.50V BOTTOM 2.25V 60μs PULSE WIDTH Tj = 50 C VGS TOP.0V 8.00V 4.50V 3.50V 3.25V 3.00V 2.50V BOTTOM 2.25V 0. 2.25V 0.0 0. V DS, Drain-to-Source Voltage (V) 2.25V 0. 0. V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.0 I D = 2.7A V GS = V.5 T J = 50 C 0. T J = 25 C.0 V DS = 5V 60μs PULSE WIDTH 0.0.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 V GS, Gate-to-Source Voltage (V) 0.5-60 -40-20 0 20 40 60 80 20 40 60 T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3
I SD, Reverse Drain Current (A) I D, Drain-to-Source Current (A) C, Capacitance (pf) V GS, Gate-to-Source Voltage (V) 0 V GS = 0V, f = MHZ C iss = C gs + C gd, C ds SHORTED 2.0 I D = 2.7A C rss = C gd C oss = C ds + C gd.0 8.0 V DS = 24V V DS = 5V C iss 6.0 C oss 4.0 C rss 2.0 V DS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 0.0 0.0 0.5.0.5 2.0 2.5 Q G, Total Gate Charge (nc) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage OPERATION IN THIS AREA LIMITED BY R DS (on) μsec T J = 50 C msec 0 T J = 25 C V GS = 0V 0.0 0.2 0.4 0.6 0.8.0.2 V SD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 0. T A = 25 C Tj = 50 C Single Pulse msec 0.0 0. V DS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 4 www.irf.com
I D, Drain Current (A) 3.0 V DS R D 2.5 2.0 R G V GS D.U.T. + - V DD.5.0 0.5 0.0 25 50 75 25 50 T A, Ambient Temperature ( C) Fig a. Switching Time Test Circuit V DS 90% V GS Pulse Width µs Duty Factor 0. % Fig 9. Maximum Drain Current Vs. Ambient Temperature % V GS t d(on) t r t d(off) t f Fig b. Switching Time Waveforms 0 Thermal Response ( Z thja ) D = 0.50 0.20 0. 0.05 0.02 0.0 0. 0.0 SINGLE PULSE ( THERMAL RESPONSE ) E-006 E-005 0.000 0.00 0.0 0. t, Rectangular Pulse Duration (sec) Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc + Tc Fig. Typical Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5
R DS(on), Drain-to -Source On Resistance (mω) R DS (on), Drain-to -Source On Resistance (mω) 300 50 260 220 I D = 2.7A Vgs = 4.5V 80 40 T J = 25 C Vgs = V 60 T J = 25 C 20 2 4 6 8 2 4 6 8 20 50 0 2 4 6 8 2 V GS, Gate -to -Source Voltage (V) I D, Drain Current (A) Fig 2. Typical On-Resistance Vs. Gate Voltage Fig 3. Typical On-Resistance Vs. Drain Current Id Vds Vgs Vgs(th) 0 20K K DUT L VCC Qgodr Qgd Qgs2 Qgs Fig 4a. Basic Gate Charge Waveform Fig 4b. Gate Charge Test Circuit 6 www.irf.com
V GS(th), Gate threshold Voltage (V) Power (W) 2.5 2.0 80 60.5 I D = 25uA I D = 250uA 40.0 20 0.5-75 -50-25 0 25 50 75 25 50 T J, Temperature ( C ) Fig 5. Typical Threshold Voltage Vs. Junction Temperature 0 E-005 0.000 0.00 0.0 0. Time (sec) Fig 6. Typical Power Vs. Time www.irf.com 7
Micro3 (SOT-23) Package Outline Dimensions are shown in millimeters (inches) 5 6 B 6 A 5 D 3 E E 0.5 [0.006] M CBA 2 e e H 4 L c A A2 C 0. [0.004] C A 3X b 0.20 [0.008] M C B A NOTES: Recommended Footprint 0.972 DIMENSIONS SYMBOL MILLIMETERS INCHES MIN MAX MIN MAX A 0.89.2 A 0.0 0. 0.0004 A2 0.88.02 b 0.30 0.50 c 0.08 0.20 D 2.80 3.04 E 2. 2.64 E.20.40 e 0.95 BSC %6& e.90 BSC %6& L 0.40 0.60 L 0.54 REF REF L2 0.25 BSC BSC 0 8 0 8 L2 0.802 0.950 2.742 3X L 7.900. DIMENSIONING & TOLERANCING PER ANSI Y4.5M-994 2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 3. CONTROLLING DIMENSION: MILLIMETER. 4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE. 5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H. 6. DIMENSIONS D AND E ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.0 INCH] PER SIDE. 7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE. 8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB. Micro3 (SOT-23/TO-236AB) Part Marking Information Notes: This part marking information applies to devices produced after 02/26/200 PART NUMBER PART NUMBER CODE REFERENCE: A = IRLML2402 B = IRLML2803 C = IRLML6302 D = IRLML53 E = IRLML6402 F = IRLML640 G = IRLML2502 H = IRLML5203 I = IRLML0030 J = IRLML2030 K = IRLML0 L = IRLML0060 M = IRLML0040 Note: A line above the work week (as shown here) indicates Lead - Free. Y = YEAR W = WEEK LOT CODE W = (-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR W = (27-52) IF PRECEDED BY A LETTER 200 A 27 A 2002 B 28 B 2003 C 29 C 2004 D 30 D 2005 E 2006 F 2007 G 2008 H 2009 J 20 K 50 X 5 Y 52 Z Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 8 www.irf.com YEAR Y 200 2002 2 2003 3 2004 4 2005 5 2006 6 2007 7 2008 8 2009 9 20 0 YEAR Y WORK WEE K W 0 A 02 B 03 C 04 D 24 25 26 WORK WEE K X Y Z W
Micro3 Tape & Reel Information Dimensions are shown in millimeters (inches) 2.05 (.080 ).95 (.077 ) 4. (.6 ) 3.9 (.54 ).6 (.062 ).5 (.060 ).85 (.072 ).65 (.065 ).32 (.05 ).2 (.045 ) TR 3.55 (.39 ) 3.45 (.36 ) 8.3 (.326 ) 7.9 (.32 ) FEED DIRECTION 4. (.6 ) 3.9 (.54 ). (.043 ) 0.9 (.036 ) 0.35 (.03 ) 0.25 (.0 ) 78.00 ( 7.008 ) MAX. 9.90 (.390 ) 8.40 (.33 ) NOTES:. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-48 & EIA-54. Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ www.irf.com 9
Orderable part number Package Type Standard Pack Form Quantity Micro3 Tape and Reel 3000 Note Qualification information Qualification level Moisture Sensitivity Level RoHS compliant Cons umer (per JEDEC JES D47F guidelines ) MS L Micro3 (per IPC/JE DEC J-S T D-020D ) Yes Qualification standards can be found at International Rectifier s web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400μs; duty cycle 2%. ƒ Surface mounted on in square Cu board Refer to application note #AN-994. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (3) 252-75 TAC Fax: (3) 252-7903 Visit us at www.irf.com for sales contact information./2009 www.irf.com