FC55 P-Channel Power Trench MOSFET -8 V, -. A, 8 mω Features Max r S(on) = 8 mω at V S = - V, I = -. A Max r S(on) = mω at V S = -.5 V, I = -.9 A High performance trench technology for extremely low r S(on) High power and current handling capability in a widely used surface mount package Fast switching speed % UIL Tested RoHS Compliant eneral escription This P-Channel MOSFET is produced using ON Semiconductor s advanced Power Trench process that has been optimized for r S(on), switching performance and ruggedness. Applications Load Switch Synchronous Rectifier S S 5 Pin SuperSOT TM - MOSFET Maximum Ratings T A = 5 C unless otherwise noted Symbol Parameter Ratings Units V S rain to Source Voltage -8 V V S ate to Source Voltage ± V rain Current -Continuous (Note a) -. I -Pulsed - E AS Single Pulse Avalanche Energy (Note ) 7 mj Power issipation (Note a). P Power issipation (Note b).7 T J, T ST Operating and Storage Junction Temperature Range -55 to +5 C Thermal Characteristics A W R θjc Thermal Resistance, Junction to Case R θja Thermal Resistance, Junction to Ambient (Note a) 78 Package Marking and Ordering Information C/W evice Marking evice Package Reel Size Tape Width Quantity.55 FC55 SSOT- 7 8 mm units Semiconductor Components Industries, LLC. October-7, Rev. Publication Order Number: FC55/
Electrical Characteristics T J = 5 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV SS rain to Source Breakdown Voltage I = -5 μa, V S = V -8 V ΔBV SS Breakdown Voltage Temperature I ΔT J Coefficient = -5 μa, referenced to 5 C - mv/ C I SS Zero ate Voltage rain Current V S = - V, V S = V - μa I SS ate to Source Leakage Current V S = ± V, V S = V ± na On Characteristics V S(th) ate to Source Threshold Voltage V S = V S, I = -5 μa - -. - V ΔV S(th) ΔT J r S(on) ate to Source Threshold Voltage Temperature Coefficient Static rain to Source On Resistance ynamic Characteristics I = -5 μa, referenced to 5 C 5 mv/ C V S = - V, I = -. A 7 8 V S = -.5 V, I = -.9 A 7 V S = - V, I = -. A, T J = 5 C 7 g FS Forward Transconductance V = - V, I = -. A. S C iss Input Capacitance 59 88 pf V S = - V, V S = V, C oss Output Capacitance 9 5 pf f = MHz C rss Reverse Transfer Capacitance pf R g ate Resistance 5.7 Ω mω Switching Characteristics t d(on) Turn-On elay Time.5 ns t r Rise Time V = - V, I = -. A,. ns t d(off) Turn-Off elay Time V S = - V, R EN = Ω 8 ns t f Fall Time.9 ns Total ate Charge V S = V to - V nc Q g(tot) Total ate Charge V S = V to -.5 V V = - V.8 nc Q gs Total ate Charge I = -. A. nc Q gd ate to rain Miller Charge.7 nc rain-source iode Characteristics V S Source to rain iode Forward Voltage V S = V, I S = -. A (Note ) -.8 -. V t rr Reverse Recovery Time 5 ns I F = -. A, di/dt = A/μs Q rr Reverse Recovery Charge 8 nc NOTES:. R θja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θjc is guaranteed by design while R θca is determined by the user's board design. a. 78 C/W when mounted on a in pad of oz copper b.75 C/W when mounted on a minimum pad of oz copper SS SF S F. Pulse Test: Pulse Width < μs, uty cycle <. %.. Starting T J = 5 o C, L = mh, I AS = -5 A, V = -8 V, V S = - V. SS SF S F
Typical Characteristics T J = 5 C unless otherwise noted -I, RAIN CURRENT (A) NORMALIZE RAIN TO SOURCE ON-RESISTANCE 8 V S = - V 5..8.....8. Figure. V S = -.5 V PULSE URATION = 8 μs UTY CYCLE =.5% MAX V S = -.5 V V S = - V V S = -.5 V -V S, RAIN TO SOURCE VOLTAE (V) I = -. A V S = - V NORMALIZE RAIN TO SOURCE ON-RESISTANCE PULSE URATION = 8 μs V S = -.5 V V S = - V UTY CYCLE =.5% MAX 8 On-Region Characteristics Figure. Normalized On-Resistance vs rain Current and ate Voltage. -75-5 -5 5 5 75 5 5 T J, JUNCTION TEMPERATURE ( o C) rs(on), RAIN TO SOURCE ON-RESISTANCE (mω) 5 V S = -.5 V V S = - V -I, RAIN CURRENT (A) I = -. A T J = 5 o C V S = -.5 V PULSE URATION = 8 μs UTY CYCLE =.5% MAX T J = 5 o C 8 -V S, ATE TO SOURCE VOLTAE (V) Figure. Normalized On- Resistance vs Junction Temperature Figure. On-Resistance vs ate to Source Voltage -I, RAIN CURRENT (A) 8 PULSE URATION = 8 μs UTY CYCLE =.5% MAX V S = -5 V T J = 5 o C T J = 5 o C T J = -55 o C 5 -V S, ATE TO SOURCE VOLTAE (V) Figure 5. Transfer Characteristics -IS, REVERSE RAIN CURRENT (A).. V S = V T J = 5 o C T J = 5 o C T J = -55 o C......8.. -V S, BOY IOE FORWAR VOLTAE (V) Figure. Source to rain iode Forward Voltage vs Source Current
Typical Characteristics T J = 5 C unless otherwise noted -VS, ATE TO SOURCE VOLTAE (V) -IAS, AVALANCHE CURRENT (A) 8 I = -. A 9 5 Figure 7. 7 5 V = - V V = - V V = -5 V Q g, ATE CHARE (nc). -V S, RAIN TO SOURCE VOLTAE (V) ate Charge Characteristics Figure 8. Capacitance vs rain to Source Voltage T J = 5 o C T J = 5 o C T J = o C.. t AV, TIME IN AVALANCHE (ms) CAPACITANCE (pf) -I, RAIN CURRENT (A).5..5..5 f = MHz V S = V V S = -.5 V V S = - V C iss C oss C rss R θja = 78 o C/W. 5 5 75 5 5 T C, Ambient TEMPERATURE ( o C) Figure 9. Unclamped Inductive Switching Capability Figure. Maximum Continuous rain Current vs Ambient Temperature -I, RAIN CURRENT (A) THIS AREA IS ms. LIMITE BY r S(on) ms SINLE PULSE TJ = MAX RATE s R θja = 75 o C/W s. T A = 5 o C C.5. -V S, RAIN to SOURCE VOLTAE (V) Figure. Forward Bias Safe Operating Area us ms P(PK), PEAK TRANSIENT POWER (W) V S = - V SINLE PULSE R θja = 75 o C/W T A = 5 o C.5 - - - - t, PULSE WITH (s) Figure. Single Pulse Maximum Power issipation
Typical Characteristics T J = 5 C unless otherwise noted NORMALIZE THERMAL IMPEANCE, Z θja.. UTY CYCLE-ESCENIN ORER =.5...5.. SINLE PULSE R θja = 75 o C/W. - - - - t, RECTANULAR PULSE URATION (sec) Figure. Junction-to-Ambient Transient Thermal Response Curve P M t t NOTES: UTY FACTOR: = t /t PEAK T J = P M x Z θja x R θja + T A 5
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