V DS -30 V V GS Max ± 20 V PD - 9759 * HEXFET Power MOSFET R DS(on) max (@V GS = -V) 65 mω ' R DS(on) max (@V GS = -4.5V) 270 mω 6 Micro3 TM (SOT-23) Application(s) System/Load Switch Features and Benefits Features Benefits Industry-standard pinout Multi-vendor compatibility Compatible with existing Surface Mount Techniques results in Easier manufacturing RoHS compliant containing no lead, no bromide and no halogen Environmentally friendly MSL, Consumer qualification Increased reliability Absolute Maximum Ratings Symbol Parameter Max. Units V DS Drain-Source Voltage -30 V I D @ T A = 25 C Continuous Drain Current, V GS @ V -2.3 I D @ T A = 70 C Continuous Drain Current, V GS @ V -.8 A I DM Pulsed Drain Current -2 P D @T A = 25 C Maximum Power Dissipation.25 P D @T A = 70 C Maximum Power Dissipation 0.80 W Linear Derating Factor W/ C V GS Gate-to-Source Voltage ± 20 V T J, T STG Junction and Storage Temperature Range -55 to + 50 C Thermal Resistance Symbol Parameter Typ. Max. Units R θja Junction-to-Ambient e R θja Junction-to-Ambient (t<s) f 99 ORDERING INFORMATION: See detailed ordering and shipping information on the last page of this data sheet. Notes through are on page www.irf.com C/W 05/27/20
Electric Characteristics @ T J = 25 C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage -30 V V GS = 0V, I D = -250µA V (BR)DSS / T J Breakdown Voltage Temp. Coefficient -3.7 mv/ C Reference to 25 C, I D = -ma R DS(on) Static Drain-to-Source On-Resistance 35 65 V GS = -V, I D = -2.3A d mω 220 270 V GS = -4.5V, I D = -.8A d V GS(th) Gate Threshold Voltage -.3-2.4 V V DS = V GS, I D = -µa I DSS.0 V DS = -24V, V GS = 0V Drain-to-Source Leakage Current µa 50 V DS = -24V, V GS = 0V, T J = 25 C I GSS Gate-to-Source Forward Leakage - V GS = -20V na Gate-to-Source Reverse Leakage V GS = 20V R G Internal Gate Resistance 2 Ω gfs Forward Transconductance 2.3 S V DS = -V, I D =-2.3A Q g Total Gate Charge 2.0 I D = -2.3A Q gs Gate-to-Source Charge 0.57 nc V DS =-5V Q gd Gate-to-Drain ("Miller") Charge.2 V GS = -4.5V d t d(on) Turn-On Delay Time 7.5 V DD =-5Vd t r Rise Time 4 I D = -.0A ns t d(off) Turn-Off Delay Time 9.0 R G = 6.8Ω t f Fall Time 8.6 V GS = -4.5V C iss Input Capacitance 60 V GS = 0V C oss Output Capacitance 39 pf V DS = -25V C rss Reverse Transfer Capacitance 25 ƒ =.0KHz Source - Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current -.3 MOSFET symbol D I SM (Body Diode) showing the A Pulsed Source Current integral reverse -2 G (Body Diode)Ãc p-n junction diode. S V SD Diode Forward Voltage -.2 V T J = 25 C, I S = -.3A, V GS = 0V d t rr Reverse Recovery Time 2 8 ns T J = 25 C, V R = -24V, I F =-.3A Q rr Reverse Recovery Charge 5.3 8.0 nc di/dt = A/µs d 2 www.irf.com
-I D, Drain-to-Source Current (A) R DS(on), Drain-to-Source On Resistance (Normalized) -I D, Drain-to-Source Current (A) -I D, Drain-to-Source Current (A) 60µs PULSE WIDTH Tj = 25 C VGS TOP -V -4.5V -3.7V -3.5V -3.3V -3.0V -2.7V BOTTOM -2.5V 60µs PULSE WIDTH Tj = 50 C VGS TOP -V -4.5V -3.7V -3.5V -3.3V -3.0V -2.7V BOTTOM -2.5V -2.5V -2.5V -V DS, Drain-to-Source Voltage (V) -V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics.6.4 I D = -2.3A V GS = -V.2 T J = 50 C T J = 25 C.0 V DS = -5V 60µs PULSE WIDTH 2 3 4 5 6 7 -V GS, Gate-to-Source Voltage (V) 0.8 0.6-60 -40-20 0 20 40 60 80 20 40 60 T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature www.irf.com 3
-I SD, Reverse Drain Current (A) -I D, Drain-to-Source Current (A) C, Capacitance (pf) -V GS, Gate-to-Source Voltage (V) 0 C oss C rss V GS = 0V, f = MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd C iss 4.0 2.0.0 8.0 6.0 I D = -2.3A V DS = -24V V DS = -5V V DS = -6.0V 4.0 2.0 0.0 0 2 3 4 5 -V DS, Drain-to-Source Voltage (V) Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage OPERATION IN THIS AREA LIMITED BY R DS (on) T J = 50 C µsec msec msec T J = 25 C DC V GS = 0V 0.3 0.5 0.7 0.9..3 -V SD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage T A = 25 C Tj = 50 C Single Pulse -V DS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 4 www.irf.com
Thermal Response ( Z thja ) C/W -I D, Drain Current (A) 2.5 V DS R D 2.0 R G V GS D.U.T..5 V GS.0 Pulse Width µs Duty Factor % + - V DD 0.5 0.0 25 50 75 25 50 T A, Ambient Temperature ( C) Fig 9. Maximum Drain Current vs. Ambient Temperature Fig a. Switching Time Test Circuit V DS 90% % V GS t d(on) t r t d(off) t f 0 Fig b. Switching Time Waveforms D = 0.50 0.20 0. 0.05 0.02 SINGLE PULSE ( THERMAL RESPONSE ) Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthja + T A E-006 E-005 0.000 0.00 t, Rectangular Pulse Duration (sec) Fig. Typical Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5
R DS(on), Drain-to -Source On Resistance (m Ω) R DS (on), Drain-to -Source On Resistance (mω) 500 I D = -2.3A 600 400 300 500 400 Vgs = -4.5V 300 200 T J = 25 C 200 T J = 25 C Vgs = -V 0 2 4 6 8 2 4 6 8 20 0 0 5 5 20 -V GS, Gate -to -Source Voltage (V) -I D, Drain Current (A) Fig 2. Typical On-Resistance vs. Gate Voltage Fig 3. Typical On-Resistance vs. Drain Current Current Regulator Same Type as D.U.T. V GS Q GS Q G Q GD 2V.2µF 50KΩ.3µF D.U.T. + V - DS V G V GS 3mA Charge I G I D Current Sampling Resistors Fig 4a. Basic Gate Charge Waveform Fig 4b. Gate Charge Test Circuit 6 www.irf.com
-V GS(th), Gate threshold Voltage (V) Single Pulse Power (W) 2.2 0 2.0 800.8.6 I D = -µa 600.4 400.2 200.0-75 -50-25 0 25 50 75 25 50 T J, Temperature ( C ) 0 E-7 E-6 E-5 E-4 E-3 E-2 E- E+0 Time (sec) Fig 5. Typical Threshold Voltage vs. Junction Temperature Fig 6. Typical Power vs. Time www.irf.com 7
Micro3 (SOT-23) Package Outline Dimensions are shown in millimeters (inches) 5 6 B 6 A 5 D 3 E E 5 [0.006] M CBA 2 e e H 4 L c A A2 A NOTES: Recommended Footprint 0.972 C 0. [0.004] C 3X b 0.20 [0.008] M C B A DIMENSIONS SYMBOL MILLIMETERS INCHES MIN MAX MIN MAX A 0.89.2 A 0. 0.0004 A2 0.88.02 b 0.30 0.50 c 0.08 0.20 D 2.80 3.04 E 2. 2.64 E.20.40 e 0.95 BSC %6& e.90 BSC %6& L 0.40 0.60 L 0.54 REF REF L2 0.25 BSC BSC 0 8 0 8 L2 0.802 0.950 2.742 3X L 7 Micro3 (SOT-23/TO-236AB) Part Marking Information.900. DIMENSIONING & TOLERANCING PER ANSI Y4.5M-994 2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 3. CONTROLLING DIMENSION: MILLIMETER. 4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE. 5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H. 6. DIMENSIONS D AND E ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.0 INCH] PER SIDE. 7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE. 8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB. RWHV7KLVSDUWPDUNLQJLQIRUPDWLRQDSSOLHVWRGHYLFHVSURGXFHGDIWHU '$7(&2'( 3$5780%(5 &X:,5( +$/2*()5(( ; 3$5780%(5&2'(5()(5(&( $,5/0/ %,5/0/ &,5/0/ ',5/0/ (,5/0/ ),5/0/ *,5/0/ +,5/0/,,5/0/ -,5/0/.,5/0/ /,5/0/ 0,5/0/,5/0/ 3,5/0/ 5,5/0/ /27&2'( /($')5(( :,)35(&('('%</$67',*,72)&$/('$5<($5 :,)35(&('('%<$/(77(5 $ $ % % & & ' ' ( ) * + -. ; Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 8 www.irf.com <($5 < <($5 < :25. :((. : $ % & ' ; < = :25. :((. :
Micro3 Tape & Reel Information Dimensions are shown in millimeters (inches) 2.05 (.080 ).95 (.077 ) 4. (.6 ) 3.9 (.54 ).6 (.062 ).5 (.060 ).85 (.072 ).65 (.065 ).32 (.05 ).2 (.045 ) TR 3.55 (.39 ) 3.45 (.36 ) 8.3 (.326 ) 7.9 (.32 ) FEED DIRECTION 4. (.6 ) 3.9 (.54 ). (.043 ) 0.9 (.036 ) 0.35 (.03 ) 0.25 (.0 ) 78.00 ( 7.008 ) MAX. 9.90 (.390 ) 8.40 (.33 ) NOTES:. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-48 & EIA-54. Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ www.irf.com 9
Orderable part number Package Type Standard Pack Form Quantity Micro3 Tape and Reel 3000 Note Qualification information Qualification level Moisture Sensitivity Level RoHS compliant Cons umer (per JEDEC JES D47F guidelines ) MS L Micro3 (per IPC/JE DEC J-S T D-020D ) Yes Qualification standards can be found at International Rectifier s web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400µs; duty cycle 2%. ƒ Surface mounted on in square Cu board. Refer to application note #AN-994. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (3) 252-75 TAC Fax: (3) 252-7903 Visit us at www.irf.com for sales contact information.05/20 www.irf.com