NT355L N-Channel Logic Level Enhancement Mode Field Effect Transistor eneral escription Features These logic level N-Channel enhancement mode power field effect transistors are produced using ON emiconductor's proprietary, high cell density, MO technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as C motor control and C/C conversion where fast switching, low in-line power loss, and resistance to transients are needed. A, 6 V. R (ON) =. Ω @ V = V, R (ON) =. Ω @ V =.5 V. Low drive requirements allowing operation directly from logic drivers. V (TH) < V. High density cell design for extremely low R (ON). High power and current handling capability in a widely used surface mount package. uperot TM -3 uperot TM -6 uperot TM -8 O-8 OT-3 OIC-6 OT-3 OT-3* (J3Z) Absolute Maximum Ratings T A = 5 o C unless otherwise noted ymbol Parameter NT355L Units V rain-ource Voltage 6 V V ate-ource Voltage - Continuous ± V I Maximum rain Current - Continuous (Note a) A - Pulsed 5 P Maximum Power issipation (Note a) 3 W (Note b).3 (Note c).,t T Operating and torage Temperature Range -65 to 5 C THERMAL CHARACTERITIC R θja Thermal Resistance, Junction-to-Ambient (Note a) C/W R θjc Thermal Resistance, Junction-to-Case (Note ) C/W * Order option J3Z for cropped center drain lead. 998 emiconductor Components Industries, LLC. eptember-7, Rev. Publication Order Number: NT355L/
Electrical Characteristics (T A = 5 O C unless otherwise noted ) ymbol Parameter Conditions Min Typ Max Units OFF CHARACTERITIC BV rain-ource Breakdown Voltage V = V, I = 5 µa 6 V BV / Breakdown Voltage Temp. Coefficient I = 5 µa, Referenced to 5 o C 55 mv/ o C I Zero ate Voltage rain Current V = 6 V, V = V µa =5 C 5 µa I F ate - Body Leakage, Forward V = V, V = V na I R ate - Body Leakage, Reverse V = - V, V = V - na ON CHARACTERITIC (Note ) V (th) ate Threshold Voltage V = V, I = 5 µa.6 V V (th) / ate Threshold Voltage Temp. Coefficient I = 5 µa, Referenced to 5 o C - mv / o C R (ON) tatic rain-ource On-Resistance V = V, I = A.7. Ω =5 C.5.8 V =.5 V, I = 3.7 A.3. I (ON) On-tate rain Current V = 5, V = V A g F Forward Transconductance V = 5 V, I = A 7 YNAMIC CHARACTERITIC C iss Input Capacitance V = 5, V = V, 35 pf C oss Output Capacitance f =. MHz pf C rss Reverse Transfer Capacitance 3 pf WITCHIN CHARACTERITIC (Note ) t (on) Turn - On elay Time V = 5, I = A, 5 ns t r Turn - On Rise Time V = V, R EN = 6 Ω 7.5 ns t (off) Turn - Off elay Time 5 ns t f Turn - Off Fall Time 7 ns Q g Total ate Charge V = V, I = A, 3 nc Q gs ate-ource Charge V = V.7 nc Q gd ate-rain Charge 3. nc RAIN-OURCE IOE CHARACTERITIC AN MAXIMUM RATIN I Maximum Continuous rain-ource iode Forward Current.5 A V rain-ource iode Forward Voltage V = V, I =.5 A (Note ).8. V Notes:. R θja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θjc is guaranteed by design while R θca is determined by the user's board design. a. o C/W when mounted on a in pad of oz Cu. b. 95 o C/W when mounted on a.66 in pad of oz Cu. c. o C/W when mounted on a.3 in pad of oz Cu. cale : on letter size paper. Pulse Test: Pulse Width < 3µs, uty Cycle <.%
Typical Electrical Characteristics I, RAIN-OURCE CURRENT (A) 5 5 5 V =V 6.V 5.V.5V.V 3.5V 3.V R (ON), NORMALIZE RAIN-OURCE ON-REITANCE.8.6.. V =.V.5V 5.V 6.V 8.V V 3 5 V, RAIN-OURCE VOLTAE (V).8 5 5 5 I, RAIN CURRENT (A) Figure. On-Region Characteristics. Figure. On-Resistance Variation with rain Current and ate Voltage. R (ON), NORMALIZE RAIN-OURCE ON-REITANCE.8.6...8 I =. A V = V.6-5 -5 5 5 75 5 5, JUNCTION TEMPERATURE ( C) R (ON), ON-REITANCE (OHM).8...6..8. T = 5 C A 5 C 6 8 V, ATE TO OURCE VOLTAE (V) I = A Figure 3. On-Resistance Variation with Temperature. Figure. On-Resistance Variation with ate-to- ource Voltage. I, RAIN CURRENT (A) 8 6 V = 5V T = -55 C J 5 C 5 C I, REVERE RAIN CURRENT (A) 3... V = V T = 5 C A 5 C -55 C.5.5 3 3.5.5 5 V, ATE TO OURCE VOLTAE (V)....6.8.. V, BOY IOE FORWAR VOLTAE (V) Figure 5. Transfer Characteristics. Figure 6. Body iode Forward Voltage Variation with Current and Temperature. 3
Typical Electrical Characteristics (continued) V, ATE-OURCE VOLTAE (V) 8 6 I = A V = V V 3V CAPACITANCE (pf) 5 5 f = MHz V = V C iss C oss C rss 6 8 Q g, ATE CHARE (nc)..3 3 6 V, RAIN TO OURCE VOLTAE (V) Figure 7. ate Charge Characteristics. Figure 8. Capacitance Characteristics. I, RAIN CURRENT (A) 5 3.3 R(ON) LIMIT s C ms ms s us ms. V = V INLE PULE o.3 R θja= C/W T A = 5 C....5 5 3 6 V, RAIN-OURCE VOLTAE (V) POWER (W) 8 6... 3 INLE PULE TIME (EC) INLE PULE R θja = C/W T A= 5 C Figure 9. Maximum afe Operating Area. Figure. ingle Pulse Maximum Power issipation. r(t), NORMALIZE EFFECTIVE TRANIENT THERMAL REITANCE.5...5 =.5...5.. P(pk).. t.5 t ingle Pulse - T = P * R (t). A θja uty Cycle, = t / t..... 3 t, TIME (sec) R (t) = r(t) * R θja θja R θja = C/W Figure. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in note c. Transient thermal response will change depending on the circuit board design.
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