YM N-CHANNEL ENHANCEMENT MOE FIEL EFFECT TRANSISTOR Product Summary BV SS R S(ON) Max I Max T A = + C V 7.Ω @ V GS = V ma escription and Applications This MOSFET has been designed to minimize the on-state resistance (R S(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Motor Control Power Management Functions Features and Benefits Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes & ) Halogen and Antimony Free. Green evice (Notes ) Qualified to AEC-Q Standards for High Reliability PPAP Capable (Note ) Mechanical ata Case: SOT Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 9V- Moisture Sensitivity: Level per J-ST- Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-ST-, Method 8 e Terminal Connections: See iagram Weight:.9 grams (Approximate) rain SOT Gate Source G S Top View Equivalent Circuit Top View Ordering Information (Note ) Part Number Compliance Case Packaging -7-F Standard SOT,/Tape & Reel --F Standard SOT,/Tape & Reel Q-7-F Automotive SOT,/Tape & Reel Notes:. No purposely added lead. Fully EU irective /9/EC (RoHS) & //EU (RoHS ) compliant.. See http:///quality/lead_free.html for more information about iodes Incorporated s definitions of Halogen- and Antimony-free, "Green" and Lead-free.. Halogen- and Antimony-free "Green products are defined as those which contain <9ppm bromine, <9ppm chlorine (<ppm total Br + Cl) and <ppm antimony compounds.. Automotive products are AEC-Q qualified and are PPAP capable. Automotive, AEC-Q and standard products are electrically and thermally the same, except where specified. For more information, please refer to https:///quality/product-compliance-definitions/.. For packaging details, go to our website at https:///design/support/packaging/diodes-packaging/. Marking Information K7 K7 = Product Type Marking Code YM = ate Code Marking Y or Y= Year (ex: E = 7) M = Month (ex: 9 = September) ate Code Key Year ~ 7 8 9 Code N ~ E F G H I J K Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov ec Code 7 8 9 O N of
Maximum Ratings (@T A = + C, unless otherwise specified.) Characteristic Symbol Value Unit rain-source Voltage V SS V rain-gate Voltage R GS.M V GR V Gate-Source Voltage Continuous ± V Pulsed GSS ± V Continuous rain Current (Note ) V GS = V Continuous rain Current (Note 7) V GS = V Steady State Steady State T A = + C T A = +8 C T A = + C T A = + C T A = +8 C T A = + C Pulsed Continuous Maximum Continuous Body iode Forward Current (Note 7). I S A Pulsed rain Current (µs Pulse, uty Cycle = %) I M 8 ma I I 7 ma ma Thermal Characteristics (@T A = + C, unless otherwise specified.) Characteristic Symbol Value Unit (Note ) 7 Total Power issipation P mw (Note 7) (Note ) 8 Thermal Resistance, Junction to Ambient R (Note 7) θja C/W Thermal Resistance, Junction to Case (Note 7) R θjc 9 Operating and Storage Temperature Range T J, T STG - to + C Electrical Characteristics (@T A = + C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) rain-source Breakdown Voltage BV SS 7 V V GS = V, I = µa Zero Gate Voltage rain Current @ T C = + C. I SS @ T C = + C µa V S = V, V GS = V Gate-Body Leakage I GSS ± na V GS = ±V, V S = V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V GS(TH).. V V S = V GS, I = µa Static rain-source On-Resistance @ T J = + C @ T J = + C @ T J = + C R S(ON).. 7... V GS =.V, I =.A V GS = V, I =.A V GS = V, I =.A On-State rain Current I (ON).. A V GS = V, V S = 7.V Forward Transconductance g FS 8 ms V S =V, I =.A iode Forward Voltage V S.78. V V GS = V, I S = ma YNAMIC CHARACTERISTICS (Note 9) Input Capacitance C iss pf Output Capacitance C oss pf Reverse Transfer Capacitance C rss.. pf Gate Resistance R g Ω Total Gate Charge (V GS =.V) Q g Gate-Source Charge Q gs 8 Gate-rain Charge Q gd 78 SWITCHING CHARACTERISTICS (Note 9) Turn-On elay Time t (ON).8 Turn-On Rise Time t R. Turn-Off elay Time t (OFF) 7. Turn-Off Fall Time t F. pc ns V S = V, V GS = V f =.MHz V S = V, V GS = V, f =.MHz V S = V, I = ma V = V, I =.A, R L =, V GEN = V, R GEN = Notes:. evice mounted on FR- PCB, with minimum recommended pad layout. 7. evice mounted on x FR- PCB with high coverage oz. Copper, single sided. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. of
V GS, GATE SOURCE CURRENT (V) P d, POWER ISSIPATION (mw) R, STATIC RAIN-SOURCE S(ON) ON-RESISTANCE ( ) R S(ON), NORMALIZE RAIN-SOURCE ON-RESISTANCE ( ) I, RAIN-SOURCE CURRENT (A) R S(ON), NORMALIZE RAIN-SOURCE ON-RESISTANCE ( ). 7.8... V S, RAIN-SOURCE VOLTAGE (V) Fig. On-Region Characteristics.....8. I, RAIN CURRENT (A) Fig. On-Resistance vs. rain Current. I = ma. I = ma. V GS = V, I = ma. - - - 7 9 T j, JUNCTION TEMPERATURE ( C) Fig. On-Resistance vs. Junction Temperature 9 8 7....8 I, RAIN CURRENT (A) Fig. Typical Transfer Characteristics 8 8 V GS, GATE TO SOURCE VOLTAGE (V) Fig. On-Resistance vs. Gate-Source Voltage 7 7 T A, AMBIENT TEMPERATURE ( C) Fig. Max Power issipation vs. Ambient Temperature of
Package Outline imensions Please see http:///package-outlines.html for the latest version. K C K B F H A G J M L All 7 GAUGE PLANE. a L SOT im Min Max Typ A.7.. B... C....89..9 F... G.78..8 H.8..9 J... K.89..97 K.9.. L... L... M.8.. a 8 -- All imensions in mm Suggested Pad Layout Please see http:///package-outlines.html for the latest version. Y Y C imensions Value (in mm) C. X.8 X. Y.9 Y.9 X X of
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