N8W-V Small Signal Fast Switching Diode Features These diodes are also available in other case styles including the DO case with the type designation N8, the e MiniMELF case with the type designation LL8, and the SOT case with the type designation IMBD8-V. Silicon epitaxial planar diode Fast switching diodes Lead (Pb)-free component Component in accordance to RoHS 00/9/EC and WEEE 00/96/EC Mechanical Data Case: SOD plastic case Weight: approx. 0. mg Packaging Codes/Options: GS8/0 k per " reel (8 mm tape), 0 k/box GS08/ k per 7" reel (8 mm tape), k/box 7 Parts Table Part Ordering code Marking Remarks N8W-V N8W-V-GS8 or N8W-V-GS08 A Tape and Reel Absolute Maximum Ratings T amb = C, unless otherwise specified Parameter Test condition Symbol Value Unit Reverse voltage V R 7 V Repetitive peak reverse voltage V RRM 00 V Average rectified current half wave rectification with resistive load f 0 Hz I F(AV) 0 ) ma Surge forward current t < s and = C I FSM 00 ma Power dissipation P tot 0 ) mw Note: ) Valid provided that electrodes are kept at ambient temperature. Thermal Characteristics T amb = C, unless otherwise specified Parameter Test condition Symbol Value Unit Thermal resistance junction to ambient air R thja 7 ) K/W Junction temperature 0 C Storage temperature T stg - 6 to + 0 C Note: ) Valid provided that electrodes are kept at ambient temperature. Document Number 878
N8W-V Electrical Characteristics T amb = C, unless otherwise specified Forward voltage Parameter Test condition Symbol Min Typ. Max Unit I F = 0 ma V F 000 mv I F = 00 ma V F 00 mv V R = 0 V I R na Leakage current V R = 7 V I R µa V R = 00 V I R 00 µa V R = 0 V, T J = 0 C I R 0 µa Diode capacitance V F = V R = 0 V C D pf Voltage rise when switching ON (tested with 0 ma pulses) tested with 0 ma pulses, t p = 0. µs, rise time < 0 ns, f p = ( to 00) khz V fr. V I F = 0 ma, I R = ma, V R = 6 V, Reverse recovery time t R L = 00 Ω rr ns Rectification efficiency f = 00 MHz, V RF = V ην 0. Rectification Efficiency Measurement Circuit 60 Ω nf kω V RF = V V O 76 Document Number 878
N8W-V Typical Characteristics T amb = C, unless otherwise specified 0 0 = 00 C = C..0 = C f = MHz I F (ma) 0 C D (V R ) C D (0 V) 0.9 0.8 0-0.7 77 0-0 V F (V) 70 0 6 8 0 V R (V) Figure. Forward characteristics Figure. Relative Capacitance vs. Reverse Voltage 0 0 = C f = khz 0 0 r f (Ω) 0 I R (na) 0 0 78 0-0 - 0 0 I F (ma) Figure. Dynamic Forward Resistance vs. Forward Current 0 V R = 0 V 0 00 00 7 ( C) Figure. Leakage Current vs. Junction Temperature P tot - Power Dissipation (mw) 0809 00 0 00 0 00 0 00 0 00 0 0 0 0 00 0 T amb - Ambient Temperature ( C) Figure. Admissible Power Dissipation vs. Ambient Temperature Document Number 878
N8W-V I FRM (A) 00 0 I v = t P /T T = /f P I FRM t P V = 0 T 0. 0. 0. 0. 0-0 - 0-0 - 0-0 7 t P (s) Figure 6. Admissible Repetitive Peak Forward Current vs. Pulse Duration t Package Dimensions in millimeters (inches): SOD 7 Document Number 878
Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to N8W-V. Meet all present and future national and international statutory requirements.. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (987) and its London Amendments (990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. Class I and II ozone depleting substances in the Clean Air Act Amendments of 990 by the Environmental Protection Agency (EPA) in the USA. Council Decision 88/0/EEC and 9/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use products for any unintended or unauthorized application, the buyer shall indemnify against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B., D-70 Heilbronn, Germany Document Number 878
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