LSIC1MO120E V N-channel, Enhancement-mode SiC MOSFET

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LSIC1MO12E8, 12 V, 8 mohm, TO-247-3L LSIC1MO12E8 12 V N-channel, Enhancement-mode SiC MOSFET RoHS Pb Product Summary Characteristics Value Unit V DS 12 V Typical R DS(ON) 8 mω I D ( T C 1 C) 25 A Circuit Diagram TO-247-3L Features * * Body diode Optimized for highfrequency, high-efficiency applications Extremely low gate charge and output capacitance Low gate resistance for high-frequency switching Normally-off operation at all temperatures Ultra-low on-resistance 1 2 3 Environmental Littelfuse RoHS logo = RoHS conform Littelfuse HF logo = Halogen Free Littelfuse Pb-free logo = Pb-free lead plating RoHS Pb Applications High-frequency applications Solar Inverters Switch Mode Power Supplies UPS Motor Drives High Voltage DC/DC Converters Battery Chargers Induction Heating 217 Littelfuse, Inc. Rev.2, Revised: 9/4/17

LSIC1MO12E8, 12 V, 8 mohm, TO-247-3L Maximum Ratings Characteristics Symbol Conditions Value Unit Continuous Drain Current I D = 2 V, T C = 25 C 39 = 2 V, T C = 1 C 25 Pulsed Drain Current 1 I D(pulse) T C = 25 C 8 A Power Dissipation P D T C = 25 C, T J = 15 C 179 W Operating Junction Temperature T J -55 to 15 C Gate-source Voltage,MAX Absolute maximum values -6 to 22,OP,TR Transient, <1% duty cycle -1 to 25,OP Recommended DC operating values -5 to 2 Storage Temperature T STG - -55 to 15 C Lead Temperature for Soldering T sold - 26 C Mounting Torque M D M3 or 6-32 screw Footnote 1: Pulse width limited by T J,max A V.6 Nm 5.3 in-lb Thermal Characteristics Characteristics Symbol Value Unit Maximum Thermal Resistance, junction-to-case R th,jc,max.7 C/W Maximum Thermal Resistance, junction-to-ambient R th,ja,max 4 C/W Electrical Characteristics (T J = 25 C unless otherwise specified) Characteristics Symbol Conditions Min Typ Max Unit Static Characteristics Drain-source Breakdown Voltage V (BR)DSS = V, I D = 25 μa 12 - - V V Zero Gate Voltage Drain Current DS = 12 V, = V - 1 1 I DSS V DS = 12 V, = V, T J = 15 C - 2 - μa Gate Leakage Current I GSS,F = 2 V, V DS = V - - 1 I GSS,R = -1 V, V DS = V - - 1 na I Drain-source On-state Resistance D = 2 A, = 2 V - 8 1 R DS(ON) I D = 2 A, = 2 V, T J = 15 C - 15 - mω V Gate Threshold Voltage DS =, I D = 1 ma 1.8 2.8 4.,(th) V DS =, I D = 1 ma, T J = 15 C - 1.9 - V Gate Resistance R G f = 1 MHz, V AC = 25 mv - 1. - Ω 217 Littelfuse, Inc. Rev.2, Revised: 9/4/17

LSIC1MO12E8, 12 V, 8 mohm, TO-247-3L Electrical Characteristics (T J = 25 C unless otherwise specified) Value Characteristics Symbol Conditions Unit Min Typ Max Dynamic Characteristics Turn-on Switching Energy E ON - 27 - V DD = 8 V, I D = 2 A, Turn-off Switching Energy E OFF = -5/+2 V, - 6 - μj R G,ext = 2 Ω, L = 1.4 mh Total Per-cycle Switching Energy E TS - 33 - Input Capacitance C ISS - 1825 - Output Capacitance Reverse Transfer Capacitance C OSS C RSS V DD = 8 V, = V, f = 1 MHz, V AC = 25 mv - - 75 15 - - pf C OSS Stored Energy E OSS - 25 - μj Total Gate Charge Q g - 95 - Gate-source Charge Q gs V = 8 V, I DD = 2 A, D = -5/+2 V - 2 - nc Gate-drain Charge Q gd - 35 - Turn-on Delay Time t d(on) - 1 - V = 8 V, V DD = -5/+2 V, GS Rise Time t r I D = 2 A, R G,ext = 2 Ω, - 1 - ns Turn-off Delay Time t R L = 4 Ω, d(off) - 16 - Timing relative to V DS Fall Time t f - 6 - Reverse Diode Characteristics Value Characteristics Symbol Conditions Unit Min Typ Max I Diode Forward Voltage S = 1 A, = V - 3.8 - V SD I S = 1 A, = V, T J = 15 C - 3.4 - V Continuous Diode Forward Current I S VGS = V, T = 25 C - - 35 C Peak Diode Forward Current 1 I SP - - 85 A Reverse Recovery Time t rr - 25 - ns VGS = -5 V, I S = 2 A, Reverse Recovery Charge Q rr V R = 8 V, - 185 - nc Peak Reverse Recovery Current I rrm di/dt = 5.3 A/ns - 16 - A Footnote 1: Pulse width limited by T J,max 217 Littelfuse, Inc. Rev.2, Revised: 9/4/17

LSIC1MO12E8, 12 V, 8 mohm, TO-247-3L Figure 1: Maximum Power Dissipation ( T J = 15 C ) Figure 2: Transfer Characteristics ( V DS = 1 V ) Maximum Power Dissipation (W) 2 18 16 14 12 1 8 6 4 2-75 -25 25 75 125 175 Case Temperature, T C ( C) 9 8 7 6 5 4 3 2 1 15 C 25 C -55 C 5 1 15 2 Gate-Source Voltage, (V) Figure 3: Output Characteristics ( T J = 25 C ) Figure 4: Output Characteristics ( T J = 15 C ) 8 8 2V 6 4 2 18V 16V 14V 12V 6 4 2 = 2V,18V,16V 14V 12V 1V 1V 2 4 6 8 1 Drain-source Voltage, V DS (V) 2 4 6 8 1 Drain-source Voltage, V DS (V) Figure 5: Output Characteristics ( T J = -55 C ) Figure 6: Reverse Conduction Characteristics ( T J = 25 C ) 8 6 4 2 2V 18V 16V 14V 12V 1V 2 4 6 8 1 Drain-source Voltage, V DS (V) 7 Reverse Voltage, V SD (V) 6 5 4 3 2-5V V 5V 1V 1 1 2 3 4 5 6 7 8 Reverse Current, I S (A) 217 Littelfuse, Inc. Rev.2, Revised: 9/4/17

LSIC1MO12E8, 12 V, 8 mohm, TO-247-3L Figure 7: Reverse Conduction Characteristics ( T J = 15 C ) Figure 8: Reverse Conduction Characteristics ( T J = -55 C ) 7 6 Reverse Voltage, V SD (V) 5 4 3 2 1 = -5V V 5V 1V,15V,2V 1 2 3 4 5 6 7 Reverse Current, I S (A) 7 Reverse Voltage, V SD (V) 6 5 4 3 2 1-5V V 5V 1V VGS = 15V,2V 1 2 3 4 5 6 7 Reverse Current, I S (A) 8 8 Figure 9: Transient Thermal Impedance Figure 1: Safe Operating Area ( T C = 25 C ) Transient Thermal Impedance, Z th,jc (Normalized to R th,jc ) 1 1-1 1-2 1-3.5.3.1.5.2.1 Single Pulse -6-5 -4-3 -2-1 1 1 1 1 1 1 1 Pulse Width (s) 1 1 1 1 μs μs 1 ms DC.1.1 1 1 Drain-source Voltage, V DS (V) Figure 11: On-resistance vs. Drain Current Figure 12: Normalized On-resistance On-resistance, R DS(ON) (mω) 2 18 16 14 12 1 8 6 4 2 15 C -55 C 25 C 15 25 35 45 55 65 Normalized On-Resistance, R DS(ON) 1.6 1.4 1.2 1.8.6.4.2 ( = 2 V, I D = 2 A ) -75-5 -25 25 5 75 112515175 Junction Temperature, T J ( C) 217 Littelfuse, Inc. Rev.2, Revised: 9/4/17

LSIC1MO12E8, 12 V, 8 mohm, TO-247-3L Figure 13: Threshold Voltage Figure 14: Drain-source Blocking Voltage Threshold Voltage, (th) (V) 4. 3.5 3. 2.5 2. 1.5 1..5 (I D = 1 ma). -75-5 -25 25 5 75 112515175 Junction Temperature, T J ( C) Normalized Blocking Voltage, V (BR)DSS (V) 1.4 1.3 1.2 1.1 1.99.98.97 (I D = 25 μa).96-75 -5-25 25 5 75 112515175 Junction Temperature, T J ( C) Figure 15: Junction Capacitances Figure 16: Junction Capacitances 1 1 C ISS C ISS Capacitance (pf) 1 1 C OSS Capacitance (pf) 1 1 C OSS 1 ( f = 1 MHz ) C RSS 2 4 6 8 1 1 C RSS ( f = 1 MHz ) 5 1 15 2 Drain Voltage, V DS (V) Drain Voltage, V DS (V) Figure 17: C OSS Stored Energy E OSS Figure 18: Gate Charge 4 2 Stored Energy, E oss (μj) 3 2 1 Gate- source Voltage, (V) 15 1 5 ( V = 8 V, I = 2 A ) DD D 2 4 6 8 1 Drain Voltage, V DS (V) -5 1 2 3 4 5 6 7 8 9 1 Gate Charge, Q g (nc) 217 Littelfuse, Inc. Rev.2, Revised: 9/4/17

LSIC1MO12E8, 12 V, 8 mohm, TO-247-3L Figure 19: Switching Energy vs. Drain Current Figure 2: Switching Energy vs. Gate Resistance Switching Energy (μj) 12 1 8 6 4 2 V DD = 8 V R G,ext = 2 =-5/+2V FWD = LSIC2SD12A1 L = 1.4 mh T J = 25 C ETS E ON E OFF Switching Energy (μj) 7 6 5 4 3 2 1 V DD = 8 V I D = 2A =-5/+2V FWD = LSIC2SD12A1 L = 1.4 mh T J = 25 C E TS E ON E OFF 1 2 3 4 5 2 4 6 8 1 12 External Gate Resistance, R G,ext (Ω) Package Dimensions TO-247-3L Recommended Hole Pattern Layout 2.46 R.93 5.44 5.44 UNIT: mm 1 A Notes: 1. Dimensions are in millimeters 2. Dimension D, E do not include mold flash. Mold flash shall not exceed.127 mm per side measured at outer most extreme of plastic body. 3.øP to have a maximum draft angle of 38.1 mm to the top of the part with a maximum hole diameter of 3.912 mm. Symbol Millimeters Min Nom Max A 4.92 5.29 5.156 A1 2.253 2.38 2.57 A2 1.854 1.981 2.18 D 2.828 2.955 21.82 E 15.773 15.9 16.27 E2 4.191 4.318 4.445 E2/2 1.473 1.524 1.575 e 5.436 L 2.66 2.193 2.32 L1 3.937 4.191 4.445 øp 3.556 3.67 3.658 Q 5.486 5.613 5.74 S 6.45 6.172 6.299 b.991-1.397 b1.991 1.199 1.346 b2 1.651-2.387 b3 1.651 1.999 2.336 b4 2.591-3.429 b5 2.591 3. 3.378 c.381.635.889 c1.381.61.838 D1 17.399 17.526 17.653 D2 1.67 1.194 1.321 E1 13.894 14.21 14.148 øp1 7.61 7.188 7.315 217 Littelfuse, Inc. Rev.2, Revised: 9/4/17

LSIC1MO12E8, 12 V, 8 mohm, TO-247-3L Part Numbering and Marking System Packing Options SIC1MO12E8 L F YYWWD ZZZZZZ-ZZ SIC = SiC 1 = Gen1 MO = MOSFET 12 = Voltage Rating (12 V) E = TO-247-3L 8 = RDS(ON) (8 mohm) YY = Year WW = Week D = Special Code ZZZZZZ-ZZ = Lot Number Part Number Marking Packing Mode M.O.Q LSIC1MO12E8 SIC1MO12E8 Tube 45 Packing Specification TO-247-3L Ø Ø Ø Ø NOTE: 1. All pin plug holes are considered critical dimension 2. Tolerance is to be ±.1 unless otherwise specified 3. Dimension are in inch (and millimeters). 217 Littelfuse, Inc. Rev.2, Revised: 9/4/17

LSIC1MO12E8, 12 V, 8 mohm, TO-247-3L 217 Littelfuse, Inc. Rev.2, Revised: 9/4/17

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