8ETU04 8ETU04S 8ETU04-1

Similar documents
30ETH06 30ETH06S 30ETH06-1

MUR3020WT. Ultrafast Rectifier. t rr = 35ns I F(AV) = 30Amp V R = 200V. Bulletin PD rev. C 05/01. Features. Package Outline

15ETL06PbF 15ETL06FPPbF

MURD620CT. Ultrafast Rectifier. t rr = 25ns I F(AV) = 6Amp V R = 200V. Bulletin PD rev. C 12/03. Features. Package Outline

MUR1620CT MURB1620CT MURB1620CT-1

60EPU02PbF 60APU02PbF

150EBU04. Ultrafast Soft Recovery Diode. t rr = 60ns I F(AV) = 150Amp V R = 400V. Bulletin PD rev. B 02/06

60EPU04PbF 60APU04PbF

Ultrafast, Soft Recovery Diode. Base Cathode Anode N/C

HFB20HJ20C. Ultrafast, Soft Recovery Diode. Features. Description. Absolute Maximum Ratings. 1 PD A V R = 200V I F(AV) = 20A

60EPU04 60APU04. Ultrafast Soft Recovery Diode. t rr = 50ns (typ) I F(AV) = 60Amp V R = 400V. Bulletin PD rev. D 07/01

HFB16HY20CC. Ultrafast, Soft Recovery Diode FRED. 1 PD B V R = 200V I F(AV) = 16A. t rr = 30ns CASE STYLE TO-257AA

TO-220AC. 1

Hyperfast Rectifier, 8 A FRED Pt

Ultrafast, Soft Recovery Diode BASE CATHODE 3 CATHODE

Ultrafast, Soft Recovery Diode BASE CATHODE CATHODE

IRGP20B60PDPbF SMPS IGBT. n-channel WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE

HFA35HB120C PD-20371E. Ultrafast, Soft Recovery Diode FRED. 1 V R = 1200V I F(AV) = 15A. Q rr = 370ns CASE STYLE TO-254AA

IRGP50B60PDPbF. n-channel SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE

SMPS IGBT. n-channel. Thermal Resistance Parameter Min. Typ. Max. Units

50MT060ULS V CES = 600V I C = 100A, T C = 25 C. I27123 rev. C 02/03. Features. Benefits. Absolute Maximum Ratings Parameters Max Units.

IRGIB15B60KD1P INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE. n-channel. Absolute Maximum Ratings

IRGR3B60KD2PbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE. n-channel. Absolute Maximum Ratings Parameter Max.

Ultrafast Rectifier, 2 x 15 A FRED Pt

Parameter Max. Units V CES Collector-to-Emitter Breakdown Voltage 600 I T C = 25 C Continuous Collector Current

250 P C = 25 C Power Dissipation 160 P C = 100 C Power Dissipation Linear Derating Factor

IRGPS40B120UP INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT

Ultrafast Rectifier, 8 A FRED Pt

IRGS4062DPbF IRGSL4062DPbF

IRGB4B60K IRGS4B60K IRGSL4B60K

Ultrafast Rectifier, 8 A FRED Pt

IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF

Hyperfast Rectifier, 1 A FRED Pt

Hyperfast Rectifier, 30 A FRED Pt

FEATURES. Heatsink. 1 2 Pin 1 Pin 2

Ultrafast Rectifier, 8 A FRED Pt

Ultrafast, Soft Recovery Diode BASE CATHODE CATHODE

Ultrafast Rectifier, 16 A FRED Pt

IRGP30B60KD-EP V CES = 600V I C = 30A, T C =100 C. t sc > 10µs, T J =150 C. V CE(on) typ. = 1.95V. Absolute Maximum Ratings. Thermal Resistance

20MT120UF "FULL-BRIDGE" IGBT MTP. UltraFast NPT IGBT V CES = 1200V I C = 40A T C = 25 C. 5/ I27124 rev. D 02/03. Features.

Hyperfast Rectifier, 2 x 15 A FRED Pt

IRGB30B60KPbF IRGS30B60KPbF IRGSL30B60KPbF

IRGB30B60K IRGS30B60K IRGSL30B60K

Absolute Maximum Ratings

Hyperfast Rectifier, 8 A FRED Pt

IRGB4056DPbF. n-channel Lead Free Package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF C

VS-HFA08SD60SPbF. HEXFRED Ultrafast Soft Recovery Diode, 8 A. Vishay Semiconductors. FEATURES BENEFITS PRODUCT SUMMARY

ECONO2 PIM. Parameter Symbol Test Conditions Ratings Units. Parameter Symbol Min Typical Maximum Units

IRG7PA19UPbF. Key Parameters V CE min 360 V V CE(ON) I C = 30A 1.49 V I RP T C = 25 C 300 A T J max 150 C. Features

Hyperfast Rectifier, 2 x 15 A FRED Pt

Ultrafast Rectifier, 8 A FRED Pt

Absolute Maximum Ratings Parameter Max. Units

± 20 Transient Gate-to-Emitter Voltage

Absolute Maximum Ratings

IRF5851. HEXFET Power MOSFET. Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge.

IRGB4B60KD1PbF IRGS4B60KD1PbF IRGSL4B60KD1PbF

Single Phase Fast Recovery Bridge (Power Modules), 61 A

FEATURES DESCRIPTION APPLICATIONS

Hyperfast Rectifier, 30 A FRED Pt

n-channel Standard Pack Orderable part number Form Quantity IRG7PH35UD1MPbF TO-247AD Tube 25 IRG7PH35UD1MPbF

IRGB4062DPbF IRGP4062DPbF

n-channel Solar Inverter Induction Heating G C E Gate Collector Emitter

IRLML2030TRPbF HEXFET Power MOSFET

A I DM W/ C V GS. Thermal Resistance Symbol Parameter Typ. Max. Units

A I DM. W/ C V GS Gate-to-Source Voltage ± 16. Thermal Resistance Symbol Parameter Typ. Max. Units

=25 C Avalanche Energy, single pulse 65 I C. C Soldering Temperature, for 10 seconds 300, (0.063 in. (1.6mm) from case)

IRG7PH35UDPbF IRG7PH35UD-EP

225 P C = 25 C Power Dissipation 40 P C = 100 C Power Dissipation Linear Derating Factor

Ultrafast Rectifier, 2 x 8 A FRED Pt

IRGP30B120KD-E. Motor Control Co-Pack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE. Features V CES = 1200V

ECONO2 6PACK. Parameter Max. Units. Parameter Min Typical Maximum Units

IRGP4263PbF IRGP4263-EPbF

T..HFL SERIES 40 A 70 A 85 A. FAST RECOVERY DIODES T-Modules. Features. Description. Major Ratings and Characteristics. Bulletin I27107 rev.

A I DM. W/ C V GS Gate-to-Source Voltage ± 20. Thermal Resistance Symbol Parameter Typ. Max. Units

IRG7PH42UDPbF IRG7PH42UD-EP

V DSS R DS(on) max I D 80V GS = 10V 3.6A. 29 P A = 25 C Maximum Power Dissipation 2.0 Linear Derating Factor

Ultrafast Rectifier, 30 A FRED Pt

225 P C = 25 C Power Dissipation 160 P C = 100 C Power Dissipation Linear Derating Factor

Ultrafast Rectifier, 2 x 30 A FRED Pt

5SDF 06D2504 Old part no. DM

SMPS MOSFET. V DSS R DS(on) max I D. -150V GS = -10V -27A P C = 25 C Maximum Power Dissipation 250 Linear Derating Factor

Ultrafast Rectifier, 2 x 15 A FRED Pt

IRGP20B120UD-E. UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE. Features V CES = 1200V

V DSS R DS(on) max I D. 100V GS = 10V 7.3A. 58 P A = 25 C Maximum Power Dissipation 2.5 Linear Derating Factor

IR IGBT IRGB4630DPbF IRGIB4630DPbF IRGP4630D(-E)PbF IRGS4630DPbF

IR IGBT IRGB4620DPbF IRGIB4620DPbF IRGP4620D(-E)PbF IRGS4620DPbF

PD A N-CHANNEL MOSFET 1 D2 P-CHANNEL MOSFET. Top View SO-8. 1

AUIRFS4115 AUIRFSL4115

IRGP4063DPbF. n-channel

IRGB4055PbF IRGS4055PbF

VS-5EWL06FN-M3. Ultralow V F Ultrafast Rectifier, 5 A FRED Pt. Vishay Semiconductors. FEATURES DESCRIPTION / APPLICATIONS

STTH10LCD06. Turbo 2 ultrafast - high voltage rectifier for flat panel displays. Description. Features

5SDD 36K5000 Old part no. DV 889B

SMPS MOSFET. V DSS R DS(on) max (mω)

5SDF 13H4505. Fast Recovery Diode. Properties. Key Parameters. VRRM = V Enhanced Safe Operating Area. IFAVm = A Industry standard housing

2 nd Generation thinq! TM SiC Schottky Diode

2 nd Generation thinq! TM SiC Schottky Diode

Ultrafast Soft Recovery Diode, 60 A FRED Pt

Transcription:

8ETU04 8ETU04S 8ETU04- Ultrafast Rectifier Features Ultrafast Recovery Time Low Forward Voltage Drop Low Leakage Current 75 C Operating Junction Temperature t rr = 60ns I F(AV) = 8Amp V R = 400V Description/ Applications International Rectifier's FRED.. series are the state of the art Ultra fast recovery rectifiers specifically designed with optimized performance of forward voltage drop and ultra fast recovery time. The planar structure and the platinum doped life time control, guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in the output rectification stage of SMPS, UPS, DC-DC converters as well as free-wheeling diode in low voltage inverters and chopper motor drives. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. Absolute Maximum Ratings Parameters Max Units V RRM Peak Repetitive Peak Reverse Voltage 400 V I F(AV) Average Rectified Forward Current, T C = 55 C 8 A I FSM Non Repetitive Peak Surge Current, T C = 5 C 0 I FRM Peak Repetitive Forward Current 6 T J, T STG Operating Junction and Storage Temperatures - 65 to 75 C Case Styles 8ETU04 8ETU04S 8ETU04- Base Cathode TO-0AC N/C 3 Anode D PAK N/C 3 Anode TO-6

Electrical Characteristics @ T J = 5 C (unless otherwise specified) Parameters Min Typ Max Units Test Conditions V BR, V r Breakdown Voltage, 400 - - V I R = 0μA Blocking Voltage V F Forward Voltage -.9.3 V I F = 8A - 0.94.0 V I F = 8A, T J = 50 C I R Reverse Leakage Current - 0. μa V R = V R Rated - 0 500 μa T J = 50 C, V R = V R Rated C T Junction Capacitance - 4 - pf V R = 400V L S Series Inductance - 8.0 - nh Measured lead to lead 5mm from package body Dynamic Recovery Characteristics @ T J = 5 C (unless otherwise specified) Parameters Min Typ Max Units Test Conditions t rr Reverse Recovery Time - 35 60 ns I F =.0A, di F /dt = 50A/μA, V R = 30V - 43 - T J = 5 C 67 T J = 5 C I RRM Peak Recovery Current -.8 - A T J = 5 C I F = 8A V R = 00V di F /dt = 00A/μs - 6.3 - T J = 5 C Q rr Reverse Recovery Charge - 60 - nc T J = 5 C - - T J = 5 C Thermal - Mechanical Characteristics Parameters Min Typ Max Units R thjc Thermal Resistance, Junction to Case -.8 C/W R thja Thermal Resistance, Junction to Ambient - - 50 R thcs Thermal Resistance, Case to Heatsink - 0.5 - Wt Weight -.0 - g - 0.07 - (oz) Mounting Torque 6.0 - Kg-cm 5.0 - lbf.in Typical Socket Mount Mounting Surface, Flat, Smooth and Greased

0 00 0 Tj = 75 C Instantaneous Forward Current - I F (A) T = 75 C J T = 50 C J T = 5 C J Reverse Current - I R (μa) Junction Capacitance - C T (pf) 0. 0.0 0.00 Tj = 50 C Tj = 5 C Tj = 0 C Tj = 5 C 0.000 0 0 00 300 400 Reverse Voltage - V R (V) Fig. - Typical Values Of Reverse Current Vs. Reverse Voltage 00 0 T = 5 C J 0. 0 0.5.5.5 Forward Voltage Drop - V FM (V) Fig. - Typical Forward Voltage Drop Characteristics 0 0 00 300 400 Reverse Voltage - V R (V) Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage Thermal Impedance Z thjc ( C/W) 0. D = 0.50 D = 0.0 D = 0. D = 0.05 D = 0.0 D = 0.0 Single Pulse (Thermal Resistance) 0.0 0.0000 0.000 0.00 0.0 0. t, Rectangular Pulse Duration (Seconds) Fig. 4 - Max. Thermal Impedance Z thjc Characteristics P DM t t Notes:. Duty factor D = t/ t. Peak Tj = Pdm x ZthJC+ Tc 3

80 4 Allowable Case Temperature ( C) 70 60 50 40 Square wave (D = 0.50) Rated Vr applied DC see note (3) 30 0 4 6 8 Average Forward Current - IF (AV) (A) Average Power Loss ( Watts ) 8 6 4 RMS Limit D = 0.0 D = 0.0 D = 0.05 D = 0. D = 0. D = 0.5 DC 0 0 4 6 8 Average Forward Current - IF (AV) (A) Fig. 5 - Max. Allowable Case Temperature Vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics 90 500 80 70 If = 6A If = 8A 450 400 350 Vr = 00V Tj = 5 C Tj = 5 C If = 6A If = 8A trr ( ns ) 60 50 Qrr ( nc ) 300 50 00 40 30 Vr = 00V Tj = 5 C Tj = 5 C 0 0 00 di F /dt (A/μs ) Fig. 7 - Typical Reverse Recovery vs. di F /dt 50 0 50 0 0 00 di F /dt (A/μs ) Fig. 8 - Typical Stored Charge vs. di F /dt (3) Formula used: T C = T J - (Pd + Pd REV ) x R thjc ; Pd = Forward Power Loss = I F(AV) x V FM @ (I F(AV) / D) (see Fig. 6); Pd REV = Inverse Power Loss = V R x I R ( - D); I R @ V R = rated V R 4

Reverse Recovery Circuit V R = 00V 0.0 Ω dif/dt F /dt ADJUST L = 70µH G D IRFP50 D.U.T. S Fig. 9- Reverse Recovery Parameter Test Circuit 3 0 I F t a trr t b Q rr 4 I RRM 0.5 I RRM di(rec)m/dt 5 0.75 I RRM di f F /dt /dt. di F /dt - Rate of change of current through zero crossing. I RRM - Peak reverse recovery current 3. t rr - Reverse recovery time measured from zero crossing point of negative going I F to point where a line passing through 0.75 I RRM and 0.50 I RRM extrapolated to zero current 4. Q rr - Area under curve defined by t rr and I RRM Q rr = t rr x I RRM 5. di (rec) M / dt - Peak rate of change of current during t b portion of t rr Fig. - Reverse Recovery Waveform and Definitions 5

Outline Table Conforms to JEDEC Outline TO-0AC Dimensions in millimeters and (inches) Conforms to JEDEC Outline D PAK Dimensions in millimeters and (inches) 6

Outline Table Conforms to JEDEC Outline TO-6 Dimensions in millimeters and (inches) Tape & Reel Information Dimensions in millimeters and (inches) 7

Part Marking Information TO-0AB EXAMPLE: THIS IS A 8ETU04 LOT CODE 789 ASSEMBLED ON WW 9, 00 IN THE ASSEMBLY LINE "C" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER DATE CODE YEAR = 00 WEEK 9 LINE C D PAK THIS IS A 8ETU04S LOT CODE 804 ASSEMBLED ON WW 0, 000 IN THE ASSEMBLY LINE "L" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER DATE CODE YEAR 0 = 000 WEEK 0 LINE L EXAMPLE: TO-6 THIS IS A 8ETU04- LOT CODE 789 ASSEMBLED ON WW 9, 999 IN THE ASSEMBLY LINE "C" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER DATE CODE YEAR 9 = 999 WEEK 9 LINE C 8

Ordering Information Table Device Code 8 E T U 04 - TRL - 3 4 5 6 7 8 - Current Rating (8 = 8A) - E = Single Diode 3 - T = TO-0 4 - U = Ultrafast Recovery 5 - Voltage Rating (04 = 400V) 6 - None = TO-0AB S = D Pak - = TO-6 Option 7 - None = Tube (50 pieces) TRL = Tape & Reel (Left Oriented - for D Pak only) TRR = Tape & Reel (Right Oriented - for D Pak only) 8 - none = Standard Production PbF = Lead-Free Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 33 Kansas St., El Segundo, California 9045, USA Tel: (3) 5-75 TAC Fax: (3) 5-7309 Visit us at for sales contact information. /06 9