PN8 PN8 PNP Switching Transistor This device is designed for very high speed saturated switching at collector currents to ma. Sourced from process 6. TO-9. Emitter. Base 3. ollector Absolute Maximum Ratings* T A = unless otherwise noted Symbol Parameter alue Units EO ollector-emitter oltage - BO ollector-base oltage - EBO Emitter-Base oltage -. I ollector urrent - ontinuous - ma T J, T STG Operating and Storage Junction Temperature Range - ~ * These ratings are limiting values above which the serviceability of any semiconductor device may be impaird. NOTES:. These ratings are based on a maximum junction temperature of degrees.. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Electrical haracteristics T A = unless otherwise noted Symbol Parameter Test ondition Min. Max. Units Off haracteristics (BR)ES ollector-emitter Breakdown oltage * I = -µa, BE = - EO(SUS) ollector-emitter Sustaining oltage * I =- 3.mA, I B = - (BR)BO ollector-base Breakdown oltage I = -µa, I E = - (BR)EBO Emitter-Base Breakdown oltage I E = -µa, I = -. I ES ollector utoff urrent E = -6., BE = E = -6., BE =, T A = 6 On haracteristics h FE D urrent Gain I = -.ma, E = -. I = -ma, E = -3. I = -ma, E = -. E (sat) ollector-emitter Saturation oltage I = -ma, I B = -.ma I = -ma, I B = -.ma BE (sat) Base-Emitter Saturation oltage I = -ma, I B = -.ma I = -ma, I B = -.ma Small Signal haracteristics f T urrent Gain Bandwidth Product I = -ma, E = -., f = MHz I = -ma, E = -, f = MHz 3 3 -. -. -. -. -.7 -.9 -. iob Input apacitance BE = -., I =, f =.MHz 3. pf cb ollector-base apacitance BE = -., I E =, f =.MHz 3. pf 7 7 µa µa MHz MHz Fairchild Semiconductor orporation Rev. B, November
Electrical haracteristics T A = unless otherwise noted (ontinued) Symbol Parameter Test ondition Min. Max. Units Switching haracteristics t on Turn-on Time, BE (off) = ns t d Delay Time I = -ma, I B = -.ma ns t r Rise Time ns t off Turn-off Time, I = -ma, ns t s Storage Time I B = I B = -ma ns t f Fall Time ns t s Storage Time I = -ma, I B = I B = -ma ns * Pulse Test: Pulse Width 3ms, Duty ycle.% PN8 Thermal haracteristics T A = unless otherwise noted Symbol Parameter Max. Units P D Total Device Dissipation Derate above 3.8 mw mw/ R θj Thermal Resistance, Junction to ase /W R θja Thermal Resistance, Junction to Ambient 37 /W Fairchild Semiconductor orporation Rev. B, November
Typical hracteristics h - TYPIAL PULSED URRENT GAIN FE - vs ollector urrent... I - OLLETOR URRENT (ma) =. E - OLLETOR EMITTER OLTAGE () ESAT...3.. oltage vs ollector urrent β =. I - OLLETOR URRENT (ma) - PN8 - BASE EMITTER OLTAGE () BESAT..8.6.. Figure. Typical Pulsed urrent Gain vs ollector urrent oltage vs ollector urrent β = -. I - OLLETOR URRENT (ma) Figure 3. Base-Emitter Saturation oltage vs ollector urrent - BASE EMITTER ON OLTAGE () BEON Figure. ollector-emitter Saturation oltage vs ollector urrent.8.6.. ollector urrent. I - OLLETOR URRENT (ma) - = E Figure. Base-Emitter On oltage vs ollector urrent I - OLLETOR URRENT (na) BO. = B. 7 T A - AMBIENT TEMPERATURE ( ) Figure. ollector utoff urrent vs Ambient Temperature P - POWER DISSIPATION (mw) D 7 6 3 SOT-3 TO-9 7 o TEMPERATURE ( ) Figure 6. Power Dissipation vs Ambient Temperature Fairchild Semiconductor orporation Rev. B, November
Typical hracteristics (ontinued) APAITANE (pf).8..6. I = ibo I = obo - - -6-8 REERSE BIAS OLTAGE () F =. MHz - - OLLETOR OLTAGE () E - - - -8 MHz -6 MHz - 6 MHz - MHz MHz 9 MHz MHz. I - OLLETOR URRENT (ma) PN8 Figure 7. Input/Output apacitance vs Reverse Bias oltage Figure 8. ontours of onstant Gain Bandwidth Produtct (f T ) SWITHING TIMES (ns) - REERSE BASE-EMITTER OLTAGE () BE(O) t r t d I - OLLETOR URRENT (ma) 3 Figure 9. Switching Times vs ollector urrent I = I B = I B BE (O) = Delay Time vs. Turn On Base urrent / Reverse Emitter oltage t = ns d 3. ns I = ma. 3 I - TURN ON BASE URRENT (ma) B ns 8. ns. ns Figure. Delay Time vs Turn On Base urrent/reverse Emitter oltage t s t f SWITHING TIMES (ns) B I = ma I B = I B = ma BE (O) = t f t r t s - T A - AMBIENT TEMPERATURE ( ).. Figure. Switching Times vs Ambient Temperature Figure. Rise Time vs ollector and Turn-On Base urrents t d Turn-On Base urrents. I - OLLETOR URRENT (ma) t =. ns f. ns ns ns Fairchild Semiconductor orporation Rev. B, November
Typical hracteristics (ontinued) B...3.. t = ns s...3.. I - TURN-OFF BASE URRENT (ma) B 8. ns. ns I =. ma 3. ns B 3 Turn-On / Turn-Off Base urrents I = ma 3 I - TURN-OFF BASE URRENT (ma) B t = ns s ns ns 6. ns PN8 Figure 3. Storage Time vs Turn-On/Turn-Off Base urrent Figure. Storage Time vs Turn-On/Turn-Off Base urrents B 8 6 t = ns s 6 8 I - TURN-OFF BASE URRENT (ma) B ns ns. ns Figure. Storage Time vs Turn-On/Turn-Off Base urrent I = ma B...3.. t = ns f Base urrents...3.. I - TURN-OFF BASE URRENT (ma) B ns ns I =. ma Figure 6. Fall Time vs Turn-On/Turn-Off Base urrents B 3 t = 6. ns f Base urrents I = ma 3 I - TURN-OFF BASE URRENT (ma) B. ns. ns Figure 7. Fall Time vs Turn-On/Turn-Off Base urrents B 8 6 t = 8. ns f I = ma 6 8 I - TURN-OFF BASE URRENT (ma) B 6. ns. ns 3. ns Figure 8. Fall Time vs Turn-On/Turn-Off Base urrents Fairchild Semiconductor orporation Rev. B, November
Test ircut PN8 BB E = -.. KΩ 3 Ω IN PW = ns Z IN = Ω t r. ns Ω. µf. KΩ To Sampling Scope Z IN kω t r <. ns t ON BB = ground IN = -.8 t OFF BB = 8. IN = 9.8 I = ma, I B =. ma, I B =. ma Figure. t on, t off Test ircuit Fairchild Semiconductor orporation Rev. B, November
Package Dimensions PN8 TO-9.8 +.. 3.86MAX.6 ±..7TYP [.7 ±.]. ±..38 +...7TYP [.7 ±.] 3.6 ±. (R.9) (.).7 ±..8 ±..38 +.. Dimensions in Millimeters Fairchild Semiconductor orporation Rev. B, November
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