YYWW Product Summary BV SS 3V R S(ON) Max.mΩ @ V GS = V.mΩ @ V GS = 4.V escription and Applications I Max T C = + C 7A A This MOSFET is designed to minimize the on-state resistance (R S(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Engine Management Systems Body Control Electronics C-C Converters S Pin S S 3V 7 C N-CHANNEL ENHANCEMENT MOE MOSFET Features and Benefits Rated to +7 C Ideal for High Ambient Temperature Environments % Unclamped Inductive Switching (Test in Production) Ensures More Reliable and Robust End Application Low R S(ON) Ensures On-State Losses are Minimized Excellent Q gd x R S(ON) Product (FOM) Small Form Factor Thermally Efficient Package Enables Higher ensity End Products Occupies just 33% of the Board Area Occupied by SO- Enabling Smaller End Product % UIS (Avalanche) Rated Totally Lead-Free & Fully RoHS Compliant (Notes & ) Halogen and Antimony Free. Green evice (Note 3) Qualified to AEC-Q Standards for High Reliability PPAP Capable (Note4) Mechanical ata Case: PowerI 3333- Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V- Moisture Sensitivity: Level 3 per J-ST- Terminal Connections Indicator: See iagram Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-ST-, Method e3 Weight:.7 grams (Approximate) G 3 7 6 G Top View Bottom View 4 Top View Internal Schematic S Equivalent Circuit Ordering Information (Note ) Notes: Part Number Case Packaging -7,/Tape & Reel -3 3,/Tape & Reel. No purposely added lead. Fully EU irective /9/EC (RoHS), /6/EU (RoHS ) & /63/EU (RoHS 3) compliant.. See http:///quality/lead_free/ for more information about iodes Incorporated s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green products are defined as those which contain <9ppm bromine, <9ppm chlorine (<ppm total Br + Cl) and <ppm antimony compounds. 4. Automotive products are AEC-Q qualified and are PPAP capable. Refer to Refer to https:///quality/.. For packaging details, go to our website at https:///design/support/packaging/diodes-packaging/. Marking Information YS YS = Product Type Marking Code YYWW = ate Code Marking YY = Last Two igits of Year (ex: = ) WW = Week Code ( to 3) PowerI is a registered trademark of iodes Incorporated. ocument number: S3993 Rev. - of 7 April iodes Incorporated
Maximum Ratings (@T A = + C, unless otherwise specified.) Characteristic Symbol Value Unit rain-source Voltage V SS 3 V Gate-Source Voltage V GSS 6 V Continuous rain Current (Notes 7 & ) V GS = V Continuous rain Current (Note 6) V GS = V T C = + C T C = + C T A = + C T A = + C Maximum Continuous Body iode Forward Current (Note 6) I S 3 A Pulsed rain Current (µs Pulse, uty Cycle = %) I M A Pulsed Body iode Forward Current (µs Pulse, uty Cycle = %) I SM A Avalanche Current, L=.3mH I AS 7 A Avalanche Energy, L=.3mH E AS mj I I 7 A A Thermal Characteristics (@T A = + C, unless otherwise specified.) Characteristic Symbol Value Unit Total Power issipation (Note 7) T C = + C P W Thermal Resistance, Junction to Case (Note 7) R JC 3 C/W Total Power issipation (Note 6) T A = + C P. W Thermal Resistance, Junction to Ambient (Note 6) R JA 6 C/W Operating and Storage Temperature Range T J, T STG - to +7 C Electrical Characteristics (@T A = + C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note ) rain-source Breakdown Voltage BV SS 3 - - V V GS = V, I = μa Zero Gate Voltage rain Current I SS - - μa V S = 4V, V GS = V Gate-Source Leakage I GSS - - na V GS = 6V, V S = V ON CHARACTERISTICS (Note ) Gate Threshold Voltage V GS(TH) - 3 V V S = V GS, I = μa Static rain-source On-Resistance R S(ON) - 4.. V GS = V, I = A mω - 6.. V GS = 4.V, I = 7A iode Forward Voltage V S -.7 V V GS = V, I S = A YNAMIC CHARACTERISTICS (Note 9) Input Capacitance C iss - 37 - V pf S = V, V GS = V, Output Capacitance C oss - 36 - f = MHz Reverse Transfer Capacitance C rss - 4 - Gate Resistance R g -.6 - Ω V S = V, V GS = V, f = MHz Total Gate Charge (V GS = 4.V) Q g - - Total Gate Charge (V GS = V) Q g - 44 - Gate-Source Charge Q gs - 7 - nc V S = V, I = A Gate-rain Charge Q gd - - Turn-On elay Time t (ON) - 6. - Turn-On Rise Time t R - 4.3 - V ns = V, V GS = V, Turn-Off elay Time t (OFF) - - R L =.7Ω, R g = 3Ω, I = A Turn-Off Fall Time t F - - Body iode Reverse Recovery Time t RR - - ns Body iode Reverse Recovery Charge Q RR - 37 - nc I F = A, di/dt = A/μs Notes: 6. R JA is determined with the device mounted on FR-4 substrate PC board, oz copper, with inch square copper plate. R JC is guaranteed by design while R JA is determined by the user s board design. 7. Thermal resistance from junction to soldering point (on the exposed drain pad).. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing.. Package limited. ocument number: S3993 Rev. - of 7 April iodes Incorporated
R S(ON), RAIN-SOURCE ON-RESISTANCE (W) R S(ON), RAIN-SOURCE ON- RESISTANCE (NORMALIZE) R S(ON), RAIN-SOURCE ON-RESISTANCE (mw) R S(ON), RAIN-SOURCE ON-RESISTANCE (mw) I, RAIN CURRENT (A) I, RAIN CURRENT (A). 4. 4. 3. 3.. V GS =.V V GS = 3.V V GS = 4.V V GS = 4.V V GS =.V V GS =3.V 3 V S =.V..... V GS = 3.V V GS =.V V GS =.V V GS =.7V... 3 V S, RAIN-SOURCE VOLTAGE (V) Figure. Typical Output Characteristic T J = T J = T J = T J =7 T J = T J =- 3 4 V GS, GATE-SOURCE VOLTAGE (V) Figure. Typical Transfer Characteristic. 3 7. 6. V GS = 4.V. 4. 3... V GS = V I = A. 4 6 4 6 I, RAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. rain Current and Gate Voltage 4 6 4 6 V GS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic...6 V GS = V T J =7 T J = T J =..6.4 V GS = 4.V, I = 7A.4 T J = T J =.. T J =-..6 V GS = V, I = A 3 I, RAIN CURRENT (A) Figure. Typical On-Resistance vs. rain Current and Temperature.4 - - 7 7 T J, JUNCTION TEMPERATURE ( ) Figure 6. On-Resistance Variation with Temperature ocument number: S3993 Rev. - 3 of 7 April iodes Incorporated
V GS (V) I, RAIN CURRENT (A) I S, SOURCE CURRENT (A) C T, JUNCTION CAPACITANCE (pf) R S(ON), RAIN-SOURCE ON-RESISTANCE (W) V GS(TH), GATE THRESHOL VOLTAGE (V).4 3.....6 V GS = 4.V, I = 7A. I = μa I = ma.4. V GS = V, I = A. - - 7 7 T J, JUNCTION TEMPERATURE ( ) Figure 7. On-Resistance Variation with Temperature - - 7 7 T J, JUNCTION TEMPERATURE ( ) Figure. Gate Threshold Variation vs. Junction Temperature 3 V GS = V f=mhz C iss C oss T J = T J = T J = T J = T J = 7 T J = -.3.6.9. V S, SOURCE-RAIN VOLTAGE (V) Figure 9. iode Forward Voltage vs. Current C rss 3 V S, RAIN-SOURCE VOLTAGE (V) Figure. Typical Junction Capacitance 9 R S(ON) Limited P W =µs 7 6 4 3 V S = V, I = A 3 3 Qg (nc) Figure. Gate Charge.. P W =ms P W =ms P W =ms T J(Max) = 7 T C = Single Pulse UT on Infinite Heatsink V GS = V P W =ms P W =s.. V S, RAIN-SOURCE VOLTAGE (V) Figure. SOA, Safe Operation Area ocument number: S3993 Rev. - 4 of 7 April iodes Incorporated
r(t), TRANSIENT THERMAL RESISTANCE =.7 =. =.3 =.9. =. =.. =. =. =.. =Single Pulse.... t, PULSE URATION TIME (sec) Figure 3. Transient Thermal Resistance R θja (t) = r(t) * R θja R θja = 3 /W uty Cycle, = t / t ocument number: S3993 Rev. - of 7 April iodes Incorporated
Package Outline imensions Please see http:///package-outlines.html for the latest version. A A3 A Pin # I b(4x) E E z(4x) e b E3 Seating Plane L(4x) E4 L(3x) im Min Max Typ A.7.. A... A3.3 b.7.37.3 b... 3. 3.3 3.3..3.7 E 3. 3.3 3.3 E.6.66.6 E3.79.9.4 E4.6.7.6 e.6 L.3.4.4 L.39 z. All imensions in mm Suggested Pad Layout Please see http:///package-outlines.html for the latest version. Y Y Y X3 X X Y4 Y3 imensions Value (in mm) C.6 X.4 X.4 X.3 X3.37 Y.7 Y. Y. Y3 3.7 Y4.4 X C ocument number: S3993 Rev. - 6 of 7 April iodes Incorporated
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