Nov P-Channel Enhancement Mode Field Effect Transistor General Description The uses advanced trench technology to provide excellent R DS(ON), low gate charge, and operation with gate voltages as low as.5v, in the small SOT33 footprint. It can be used for a wide variety of applications, including load switching, low current inverters and low current DC-DC converters. Features V DS (V) = -3V I D = -1.A R DS(ON) < 15mΩ (V GS = -V) R DS(ON) < mω (V GS = -.5V) R DS(ON) < 8mΩ (V GS = -.5V) SC-7 (SOT-33) Top View D G S D G S Absolute Maximum Ratings T A =5 C unless otherwise noted Parameter Symbol Maximum Drain-Source Voltage -3 Gate-Source Voltage Continuous Drain T A =5 C Current A T A =7 C Pulsed Drain Current B Power Dissipation A T A =5 C T A =7 C Junction and Storage Temperature Range V DS V GS I DM T J, T STG ±1-1. I D -1. - P D.35. -55 to 15 Units V V A W C Thermal Characteristics Parameter Symbol Typ Max Units Maximum Junction-to-Ambient A t s 3 36 C/W R θja Maximum Junction-to-Ambient A Steady-State 35 5 C/W Maximum Junction-to-Lead C Steady-State R θjl 8 3 C/W Alpha & Omega Semiconductor, Ltd.
Electrical Characteristics (T J =5 C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV DSS Drain-Source Breakdown Voltage I D =-5µA, V GS =V -3 V I DSS Zero Gate Voltage Drain Current V DS =-V, V GS =V -1 T J =55 C -5 µa I GSS Gate-Body leakage current V DS =V, V GS =±1V ± na V GS(th) Gate Threshold Voltage V DS =V GS I D =-5µA -.6-1 -1. V I D(ON) On state drain current V GS =-.5V, V DS =-5V - A V GS =-V, I D =-1.A 1 15 mω T J =15 C 173 R DS(ON) Static Drain-Source On-Resistance V GS =-.5V, I D =-1.A 17 mω V GS =-.5V, I D =-1A 7 8 mω g FS Forward Transconductance V DS =-5V, I D =-1.A 3.5 S V SD Diode Forward Voltage I S =-1A,V GS =V -.85-1 V I S Maximum Body-Diode Continuous Current -.5 A DYNAMIC PARAMETERS C iss Input Capacitance 9 pf C oss Output Capacitance V GS =V, V DS =-15V, f=1mhz 55 pf C rss Reverse Transfer Capacitance pf R g Gate resistance V GS =V, V DS =V, f=1mhz 1 Ω SWITCHING PARAMETERS Q g Total Gate Charge 5.6 nc Q gs Gate Source Charge V GS =-.5V, V DS =-15V, I D =-1A.7 nc Q gd Gate Drain Charge 1.58 nc t D(on) Turn-On DelayTime 6. ns t r Turn-On Rise Time V GS =-V, V DS =-15V, R L =15Ω, 3. ns t D(off) Turn-Off DelayTime R GEN =3Ω 1. ns t f Turn-Off Fall Time 1.5 ns t rr Body Diode Reverse Recovery Time I F =-1A, di/dt=a/µs 13. ns Q rr Body Diode Reverse Recovery Charge I F =-1A, di/dt=a/µs 5. nc A: The value of R θja is measured with the device mounted on 1in FR- board with oz. Copper, in a still air environment with T A =5 C. The value in any a given application depends on the user's specific board design. The current rating is based on the t s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θja is the sum of the thermal impedence from junction to lead R θjl and lead to ambient. D. The static characteristics in Figures 1 to 6,1,1 are obtained using 8 µs pulses, duty cycle.5% max. E. These tests are performed with the device mounted on 1 in FR- board with oz. Copper, in a still air environment with T A =5 C. The SOA curve provides a single pulse rating. Alpha & Omega Semiconductor, Ltd.
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 8 -V -5V -V V GS =-3.5V -3V 8 V DS =-5V 5 C -I D (A) 6 -.5V -I D (A) 6 15 C -.V 1 3 5 -V DS (Volts) Fig 1: On-Region Characteristics.5 1 1.5.5 3 3.5 -V GS (Volts) Figure : Transfer Characteristics 3 1.8 R DS(ON) (mω) 5 15 V GS =-.5V V GS =-.5V V GS =-V 1 3 5 6 -I D (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Normalized On-Resistance 1.6 1. 1. 1 V GS =-V V GS =-.5V V GS =-.5V I D =-1A.8 5 5 75 15 15 175 Temperature ( C) Figure : On-Resistance vs. Junction Temperature 35 1.E+1 3 I D =-1A 1.E+ R DS(ON) (mω) 5 15 5 C 15 C -I S (A) 1.E-1 1.E- 1.E-3 1.E- 1.E-5 15 C 5 C 5 6 8 -V GS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.E-6....6.8 1. 1. 1. -V SD (Volts) Figure 6: Body-Diode Characteristics Alpha and Omega Semiconductor, Ltd.
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 V DS =-15V I D =-1A 6 5 C iss -V GS (Volts) 3 Capacitance (pf) 3 1 C oss Crss 1 3 5 -Q g (nc) Figure 7: Gate-Charge Characteristics 5 15 5 3 -V DS (Volts) Figure 8: Capacitance Characteristics -I D (Amps).. 1. T J(Max) =15 C T A =5 C R DS(ON) limited.1s µs 1ms ms µs Power (W) 1 1 8 6 T J(Max) =15 C T A =5 C. 1s s DC.1.1 1 -V DS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E).1.1.1 1 Pulse Width (s) Figure : Single Pulse Power Rating Junction-to- Ambient (Note E) Z θja Normalized Transient Thermal Resistance 1.1 D=T on /T T J,PK =T A +P DM.Z θja.r θja R θja =36 C/W Single Pulse In descending order D=.5,.3,.1,.5,.,.1, single pulse.1.1.1.1.1.1 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance P D T on T Alpha & Omega Semiconductor, Ltd.
SC-7 3L Package Data θ SYMBOLS A A1 A b C D E E1 F e e1 L θ1 DIMENSIONS IN MILLIMETERS MIN MAX.9 1....9 1..5... 1.8. 1.15 1.35...3..65 BSC 1.3 BSC..3 1 8 NOTE: 1. LEAD FINISH: 15 MICROINCHES ( 3.8 um) MIN. THICKNESS OF Tin/Lead (SOLDER) PLATED ON LEAD. TOLERANCE ±. mm ( mil) UNLESS OTHERWISE SPECIFIED 3. COPLANARITY :. mm. OTHER NAME OF THIS PACKAGE IS CALLED SOT-33 PACKAGE MARKING DESCRIPTION RECOMMENDATION OF LAND PATTERN P N W L T SC-7 3L PART NO. CODE PART NO. CODE 1 NOTE: P - PART NUMBER CODE. N - FOUNDRY AND ASSEMBLY LOCATION CODE W - YAER AND WEEK CODE. L T - ASSEMBLY LOT CODE. Rev. A
SC-7 3L Tape and Reel Data SC-7 3L Carrier Tape SC-7 3L Reel SC-7 3L Tape Leader / Trailer & Orientation