pplications l Synchronous MOSFET for Notebook Processor Power l Secondary Synchronous Rectification for Isolated CC Converters l Synchronous Fet for NonIsolated CC Converters l LeadFree HEXFET Power MOSFET V SS R S(on) max Qg (typ.) 40V 5.0m @V GS = 0V 33nC 8 S S S 2 3 7 6 P 95269 Benefits l Very Low R S(on) at 4.5V V GS l Low Gate Charge l Fully Characterized valanche Voltage and Current G 4 5 Top View SO8 bsolute Maximum Ratings Parameter Max. Units V S raintosource Voltage 40 V V GS I @ T = 25 C GatetoSource Voltage Continuous rain Current, V GS @ 0V I @ T = 70 C Continuous rain Current, V GS @ 0V 4 I M Pulsed rain Current 40 P @T = 25 C Power issipation 2.5 W P @T = 70 C Power issipation.6 Linear erating Factor 0.02 W/ C T J Operating Junction and 55 to 50 C T STG Thermal Resistance Storage Temperature Range Parameter Typ. Max. Units R!JL Junctiontorain Lead 20 C/W R!J Junctiontombient 50 ± 20 8 Notes through are on page 9 www.irf.com 09/2/04
Static @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units BV SS raintosource Breakdown Voltage 40 V "#V SS /"T J Breakdown Voltage Temp. Coefficient 0.037 V/ C R S(on) Static raintosource OnResistance 4.0 5.0 m$ 4.7 5.9 V GS(th) Gate Threshold Voltage.35 2.25 V "V GS(th) Gate Threshold Voltage Coefficient 5.6 mv/ C I SS raintosource Leakage Current.0 µ 50 I GSS GatetoSource Forward Leakage 00 n GatetoSource Reverse Leakage 00 gfs Forward Transconductance 8 S Q g Total Gate Charge 33 50 Q gs PreVth GatetoSource Charge 9.6 Q gs2 PostVth GatetoSource Charge 2.8 nc Q gd Gatetorain Charge 0 Q godr Gate Charge Overdrive 0.6 Q sw Switch Charge (Q gs2 Q gd ) 2.8 Q oss Output Charge 8 nc R G Gate Resistance.3 TB $ t d(on) TurnOn elay Time 4 t r Rise Time 2 t d(off) TurnOff elay Time 2 ns t f Fall Time 5.0 C iss Input Capacitance 4500 C oss Output Capacitance 680 pf C rss Reverse Transfer Capacitance 30 valanche Characteristics Parameter Typ. Max. Units E S Single Pulse valanche Energy 50 mj I R valanche Current 4 iode Characteristics Parameter Min. Typ. Max. Units I S Continuous Source Current 3. (Body iode) I SM Pulsed Source Current 40 (Body iode) V S iode Forward Voltage.0 V t rr Reverse Recovery Time 99 50 ns Q rr Reverse Recovery Charge 7 nc 2 www.irf.com Conditions V GS = 0V, I = 250µ Reference to 25 C, I = m V GS = 0V, I = 7 V GS = 4.5V, I = 4 V S = V GS, I = 250µ V S = 32V, V GS = 0V V S = 32V, V GS = 0V, T J = 25 C V GS = 20V V GS = 20V V S = 20V, I = 4 V S = 20V V GS = 4.5V I = 4 V S = 6V, V GS = 0V V = 20V, V GS = 4.5V I = 4 Clamped Inductive Load V GS = 0V V S = 20V ƒ =.0MHz Conditions MOSFET symbol showing the integral reverse pn junction diode. T J = 25 C, I S = 4, V GS = 0V T J = 25 C, I F = 4, V = 20V di/dt = 00/µs
I, raintosource Current &') R S(on), raintosource On Resistance (Normalized) I, raintosource Current () I, raintosource Current () 000 00 VGS TOP 0V 5.0V 4.5V 3.5V 3.3V 3.0V 2.8V BOTTOM 2.5V 000 00 VGS TOP 0V 5.0V 4.5V 3.5V 3.3V 3.0V 2.8V BOTTOM 2.5V 0 0 2.5V 2.5V 0. % 60µs PULSE WITH Tj = 25 C 0. 0 00 V S, raintosource Voltage (V) % 60µs PULSE WITH Tj = 50 C 0. 0 00 V S, raintosource Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics 000.0 2.0 I = 8 V GS = 0V 00.0 0.0 T J = 50 C.5.0 T J = 25 C.0 V S = 25V % 60µs PULSE WITH 0..5 2.0 2.5 3.0 3.5 4.0 V GS, GatetoSource Voltage (V) 0.5 60 40 20 0 20 40 60 80 00 20 40 60 T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized OnResistance Vs. Temperature www.irf.com 3
C, Capacitance (pf) I S, Reverse rain Current () I, raintosource Current () V GS, GatetoSource Voltage (V) 00000 V GS = 0V, f = MHZ C iss = C gs C gd, C ds SHORTE C rss = C gd C oss = C ds C gd 2 0 I = 4 V S = 30V VS= 20V 0000 8 Ciss 6 000 Coss 4 Crss 2 00 0 00 V S, raintosource Voltage (V) 0 0 20 40 60 80 Q G Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. raintosource Voltage Fig 6. Typical Gate Charge Vs. GatetoSource Voltage 000.0 000 OPERTION IN THIS RE LIMITE BY R S (on) 00.0 T J = 50 C 00 0.0 0 T.0 J = 25 C V GS = 0V 0. 0.2 0.4 0.6 0.8.0.2 V S, Sourcetorain Voltage (V) 0. Tc = 25 C Tj = 50 C Single Pulse msec 0msec 0 0 00 000 V S, raintosource Voltage (V) Fig 7. Typical Sourcerain iode Forward Voltage Fig 8. Maximum Safe Operating rea 4 www.irf.com
I, rain Current () V GS(th) Gate threshold Voltage (V) 8 2.4 6 4 2.0 2 0 8 6 4 2.6.2 0.8 I = 250µ 0 25 50 75 00 25 50 T J, Junction Temperature ( C) 0.4 75 50 25 0 25 50 75 00 25 50 T J, Temperature ( C ) Fig 9. Maximum rain Current Vs. Case Temperature Fig 0. Threshold Voltage Vs. Temperature Thermal Response ( Z thj ) 00 0 = 0.50 0.20 0.0 0.05 0.02 0.0 0. 0.0 0.00 0.000 SINGLE PULSE ( THERML RESPONSE ) ) J ) J ) ) ) 2 ) 3 ) 2 ) 3 Ci= )i*ri Ci= i*ri R R 2 R 3 R R 2 R 3 E006 E005 0.000 0.00 0.0 0. 0 00 t, Rectangular Pulse uration (sec) Notes:. uty Factor = t/t2 2. Peak Tj = P dm x Zthja Tc Fig. Maximum Effective Transient Thermal Impedance, Junctiontombient Ri ( C/W) ()i (sec) 0.48 0.3867 26.83.8582 2.69 44.8 www.irf.com 5 ) C )
R S (on), rainto Source On Resistance (m$) E S, Single Pulse valanche Energy (mj) 6 2 I = 8 200 60 I TOP 6.7 7.5 BOTTOM 4 20 8 T J = 25 C 80 4 T J = 25 C 40 0 2.0 4.0 6.0 8.0 0.0 V GS, GatetoSource Voltage (V) 0 25 50 75 00 25 50 Starting T J, Junction Temperature ( C) Fig 2. OnResistance Vs. Gate Voltage Fig 3c. Maximum valanche Energy Vs. rain Current 5V V S L V S L RIVER V R G 20V V GS tp.u.t IS 0.0$ V Fig 3a. Unclamped Inductive Test Circuit V GS Pulse Width < µs uty Factor < 0.%.U.T tp V (BR)SS Fig 4a. Switching Time Test Circuit V S 90% 0% V GS I S t d(on) t r t d(off) t f Fig 3b. Unclamped Inductive Waveforms Fig 4b. Switching Time Waveforms 6 www.irf.com
.U.T ƒ Circuit Layout Considerations (((,( Low Stray Inductance (,((Ground Plane (,((Low Leakage Inductance Current Transformer Reverse Recovery Current river Gate rive Period P.W..U.T. I S Waveform Body iode Forward Current di/dt.u.t. V S Waveform iode Recovery dv/dt = P.W. Period V GS =0V V * R G,((dv/dt controlled by RG,((river same type as.u.t.,((i S controlled by uty Factor "",((.U.T. evice Under Test V Repplied Voltage Inductor Curent Body iode Forward rop Ripple % 5% I S * V GS = 5V for Logic Level evices Fig 5. Peak iode Recovery dv/dt Test Circuit for NChannel HEXFET Power MOSFETs Current Regulator Same Type as.u.t. Vds Id Vgs 50K$ 2V.2F.3F.U.T. V S Vgs(th) V GS 3m I G I Current Sampling Resistors Qgs Qgs2 Qgd Qgodr Fig 6. Gate Charge Test Circuit Fig 7. Gate Charge Waveform www.irf.com 7
SO8 Package Outline imensions are shown in millimeters (inches) E 6 6X 8 7 2 e 5 6 5 3 4 B H 0.25 [.00] IM b E e e H K L y IN CHES MIN MX.0532.0688.0040.0098.03.020.89.968.497.574.050 B S I C.27 B S I C.025 B SIC 0.635 B SIC.2284.2440.0099.096.06.050 0 8 MILLIMET ERS MIN MX.35.75 0.0 0.25 0.33 0.5 c.0075.0098 0.9 0.25 4.80 5.00 3.80 4.00 5.80 6.20 0.25 0.50 0.40.27 0 8 e C y K x 45 N OT E S : 8X b 0.25 [.00] C B 0.0 [.004]. IME NS I ONIN G & T OLE R N CIN G PER S ME Y4.5M994. 2. C ONTR OLLIN G IME NS I ON: MILLIME T ER 3. IME NS I ONS RE S H OWN IN MILLIME T ERS [IN CHES ]. 4. OUT LINE C ONF OR MS T O JE E C OUT LINE MS02. 5 IME NS I ON OES N OT IN CLU E MOL PR OTRUSI ONS. M OL PR OT RU SI ONS N OT T O EX CEE 0.5 [.006]. 6 IME NS I ON OES N OT IN CLU E MOL PR OTRUSI ONS. M OL PR OT RU SI ONS N OT T O EX CEE 0.25 [.00]. 7 IME NS I ON IS T HE LE N GT H OF LE F OR S OLERIN G T O S U BS TR T E. 8X L 7 6.46 [.255] 3X.27 [.050] 8X c F O OT PRINT 8X 0.72 [.028] 8X.78 [.070] SO8 Part Marking E XMPLE: T HIS IS N IRF 70 (MOS F ET ) INT E R N T I ON L RE CT IF IER L O G O XXXX F 70 T E C OE (YWW) P = E SI GN T ES LE F RE E PR OU CT (OPT I ON L) Y = L ST I GIT OF T HE YE R WW = WE EK = S S E MBLY SIT E C OE L OT C OE P RT NU MB ER 8 www.irf.com
SO8 Tape and Reel imensions are shown in millimeters (inches) TERMINL NUMBER 2.3 (.484 ).7 (.46 ) 8. (.38 ) 7.9 (.32 ) FEE IRECTION NOTES:. CONTROLLING IMENSION : MILLIMETER. 2. LL IMENSIONS RE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EI48 & EI54. 330.00 (2.992) MX. NOTES :. CONTROLLING IMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EI48 & EI54. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25 C, L = 0.5mH R G = 25$, I S = 4. ƒ Pulse width % 400µs; duty cycle % 2%. 4.40 (.566 ) 2.40 (.488 ) When mounted on inch square copper board R! is measured at T J approximately 90 C ata and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR s Web site. IR WORL HEQURTERS: 233 Kansas St., El Segundo, California 90245, US Tel: (30) 252705 TC Fax: (30) 2527903 Visit us at www.irf.com for sales contact information.09/04 www.irf.com 9