G417/418/419 Precision MO Analog witches Features Benefits Applications 1-V Analog ignal Range On-Resistance r (on) : 2 Fast witching Action t ON : 1 ns Ultra Low Power Requirements P :3 nw TTL and MO ompatible MiniIP and OI Packaging 44-V upply Max Rating escription Wide ynamic Range Low ignal Errors and istortion Break-Before-Make witching Action imple Interfacing Reduced Board pace Improved Reliability Precision Test Equipment Precision Instrumentation Battery Powered ystems ample-and-hold ircuits Military Radios Guidance and ontrol ystems Hard isk rives The G417/418/419 monolithic MO analog switches were designed to provide high performance switching of analog signals. ombining low power, low leakages, high speed, low on-resistance and small physical size, the G417 series is ideally suited for portable and battery powered industrial and military applications requiring high performance and efficient use of board space. To achieve high-voltage ratings and superior switching performance, the G417 series is built on iliconix s high voltage silicon gate (HVG) process. Break-before-make is guaranteed for the G419, which is an PT configuration. An epitaxial layer prevents latchup. The G417 and G418 respond to opposite control logic levels as shown in the Truth Table. Functional Block iagram and Pin onfiguration G417 ual-in-line and OI 8 N 2 7 GN 3 6 4 Truth Table Logic G417 G418 ON OFF 1 OFF ON Logic =.8 V, Logic 1 = 2.4 V Top View G419 ual-in-line and OI 1 8 2 7 GN 3 6 4 Truth Table G419 Logic W 1 W 2 ON OFF 1 OFF ON Logic =.8 V, Logic 1 = 2.4 V Top View Updates to this data sheet may be obtained via facsimile by calling iliconix FaxBack, 1-48-97-6. Please request FaxBack document #71. iliconix -288 Rev., 28-Apr-97 1
G417/418/419 Ordering Information Temp Range Package Part Number G417/418 G417J 4 to 8 8-Pin Plastic MiniIP G418J G417Y 8-Pin Narrow OI G418Y G417AK, G417AK/883 to 12 8-Pin erip G418AK, G418AK/883 G419 4 to 8 8-Pin Plastic MiniIP G419J 8-Pin Narrow OI G419Y to 12 8-Pin erip G419AK, G419AK/883 Absolute Maximum Ratings Voltages Referenced to.................................................. 44 V GN................................................. 2 V.............................. (GN.3 V) to () +.3 V igital Inputs a V, V.................. () 2 V to () + 2 V or 3 ma, whichever occurs first urrent, (Any Terminal) ontinuous...................... 3 ma urrent ( or ) Pulsed 1 ms, 1% duty cycle............. 1 ma torage Temperature (AK uffix).............. 6 to 1 (J, Y uffix)........... 6 to 12 Power issipation (Package) b 8-Pin Plastic MiniIP c................................ 4 mw 8-Pin Narrow OI d................................. 4 mw 8-Pin erip e...................................... 6 mw Notes: a. ignals on X, X, or X exceeding or will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to P Board. c. erate 6 mw/ above 7 d. erate 6. mw/ above 2 e. erate 12 mw/ above 7 chematic iagram (Typical hannel) Level hift/ rive Figure 1. 2 iliconix -288 Rev., 28-Apr-97
pecifications a Parameter Analog witch ymbol Test onditions Unless Otherwise pecified G417/418/419 A uffix to 12 uffix 4 to 8 = 1 V, = = V, V = 2.4 V,.8 V f Temp b Typ c Min d Max d Min d Max d Unit Analog ignal Range e V ANALOG 1 1 1 1 V rain-ource On-Resistance witch Off Leakage urrent hannel On Leakage urrent igital ontrol Input urrent V Low Input urrent V High ynamic haracteristics r (on) I = 1 ma, V = 12. V = 13. V, = 13. V I (off) = 16. V, = 16. V V = 1. V I V = 1. V (off) I (on) = 16. V, = 16. V V = V = 1. V G417 G418 G419 G417 G418 G419 2 3 4.1.2 2.1.2 2.1.7 6.4.4 4.4.7 6.2 2.2 2.7 6.4 4.7 6.2.2.7 12.4 1.7 12 I IL..... I IH..... Turn-On Time t ON = 3, L = 3 pf V = 1 V ee witching Time Turn-Off Time t OFF Test ircuit Transition Time t TRAN V 1 = 1 V = 3, L = 3 pf V 2 = 1 V Break-Before-Make Time elay t = 3, L = 3 pf V 1 = V 2 = 1 V G417 G418 G417 G418 G419 1 17 2 6 14 21 17 2 G419 13 harge Injection Q L = 1 nf, V gen = V, R gen = 6 p ource Off apacitance (off) 8 rain Off apacitance f = 1 MHz, V =V G417 (off) 8 G418 pf G417 hannel On (on) 3 f = 1 MHz, V = V G418 apacitance G419 3 Power upplies Positive upply urrent I+ Negative upply I urrent = 16. V, = 16. V Logic upply urrent I = or V Ground urrent I GN.1 1.1 1.1 1. 1 1 1 1 3 4.2.2.7 12.4 1.7 12 17 2 14 21 17 2 1 1 na A ns A iliconix -288 Rev., 28-Apr-97 3
G417/418/419 pecifications a for Unipolar upplies Parameter Analog witch ymbol Test onditions Unless Otherwise pecified = 12 V, = V A uffix to 12 uffix 4 to 8 = V, V = 2.4 V,.8 V f Temp b Typ c Min d Max d Min d Max d Unit Analog ignal Range e V ANALOG 12 12 V rain-ource On-Resistance ynamic haracteristics r (on) I = 1 ma, V = 3.8 V = 1.8 V Turn-On Time t ON RL = 3, L = 3 pf, V = 8 V 11 Turn-Off Time t OFF L L ee witching Time Test ircuit 4 Break-Before-Make Time elay t = 3, L = 3 pf G419 6 4 harge Injection Q L = 1 nf, V gen = V, R gen = p Power upplies Positive upply urrent I+.1 Negative upply I = 13.2 V, =.2 V urrent V = or V Logic upply urrent I L ns.1 A.1 Ground urrent I GN.1 Notes: a. Refer to PROE OPTION FLOWHART. b. = 2, = as determined by the operating temperature suffix. c. Typical values are for EIGN AI ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. V = input voltage to perform proper function. 4 iliconix -288 Rev., 28-Apr-97
G417/418/419 Typical haracteristics r (on) vs. V and upply Voltage I = 1 ma V 4 r (on) vs. Temperature r(on) 4 3 2 8 V 1 V 12 V 1 V r(on) ( ) 3 2 T A = 12 2 1 2 V 1 2 1 1 1 1 2 V rain Voltage (V) 1 1 1 1 V rain Voltage (V) I (pa) 3 2 1 1 2 Leakage urrents vs. Analog Voltage = 1 V = = V G417/418: I (off), I (off) G419: I (off) G417/418: I (on) G419: I (off), I (on) Q (p) 2 1 1 = 16. V = 16. V = V V = V rain harge Injection L = 1 nf 1 nf 1 pf pf 3 1 1 1 1 V or V rain or ource Voltage (V) 1 1 1 1 V ource Voltage (V) Input witching Threshold vs. upply Voltages 3. Operating Voltage Range V (V) 3. 2. 2. 1. 1.. () () = 7 V = V 1 1 2 2 3 3 4 1 1 1 (V) 42 4 3 2 1 ÉÉ ÉÉÉ V MO ompatible ÉÉÉÉ ÉÉÉÉÉÉ ÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉ TTL ompatible ÉÉÉÉÉÉÉÉ V =.8 V, 2.4 V ÉÉÉÉÉÉÉÉ MO ompatible 2 1 2 3 4 Negative upply (V) = Voltages Used for Production Testing iliconix -288 Rev., 28-Apr-97
G417/418/419 Typical haracteristics (ont d) ton, toff (ns) 12 1 8 6 4 2 witching Time vs. Temperature = 1 V, = = V, V = 3 V Pulse t ON t OFF (db) 14 12 1 8 6 4 2 rosstalk and Off Isolation vs. Frequency G419 ource 1 = 1 V = = V G417/418/419 ource 2 4 2 2 4 6 8 1 12 1 1 k 1 k 1 k 1 M 1 M 1 M Temperature ( ) f Frequency (Hz) 8 witching Time vs. upply Voltages 13 12 witching Time vs. ton, toff (ns) 7 6 = V = V V = 3 V t ON t OFF ton, toff (ns) 11 1 9 8 7 6 4 = V = V V = 3 V t ON t OFF IUPPLY 4 1 11 12 13 14 1 16 upply Voltage (V) Power upply urrents vs. witching Frequency 1 ma = 1 V, = = V, V = V, % ycle 1 ma 1 A 1 A 1 A I+, I I L IUPPLY 3 1 A 1 na 1 na 1 na 1 pa 1 pa 1 pa 1 11 12 13 14 1 16 upply Voltage (V) upply urrent vs. Temperature = 16. V, = 16. V = V, V = V I+, I I GN 1 na 1 1 k 1 k 1 k 1 M 1 M f Frequency (Hz).1 pa 4 2 2 4 6 8 1 12 Temperature ( ) 6 iliconix -288 Rev., 28-Apr-97
G417/418/419 Test ircuits is the steady state output with the switch on. 1 V GN 3 L 3 pf Logic Input witch Input 3 V V V % 9% t r <2 ns t f <2 ns t OFF witch Output V t ON L (includes fixture and stray capacitance) R O = V + r (on) Note: Logic input waveform is inverted for switches that have the opposite logic sense. Figure 2. witching Time (G417/418) V 1 Logic Input 3 V V t r <2 ns t f <2 ns V 2 GN 3 L 3 pf V 1 = V 2 witch Output V 9% t t L (includes fixture and stray capacitance) Figure 3. Break-Before-Make (G419) V 1 Logic Input 3 V V % t r <2 ns t f <2 ns V 2 GN 3 L 3 pf witch Output t TRAN V 1 V 1 V 2 V 2 1% t TRAN 9% L (includes fixture and stray capacitance) = V + r (on) Figure 4. Transition Time (G419) iliconix -288 Rev., 28-Apr-97 7
G417/418/419 Test ircuits (ont d) V g R g 3 V GN L 1 nf X OFF ON Q = x L OFF Figure. harge Injection V R g = V R g =.8 V GN V, 2.4 V GN X TALK Isolation = 2 log = RF bypass V Off Isolation = 2 log V Figure 6. rosstalk (G419) Figure 7. Off Isolation V R g = V, 2.4 V GN Figure 8. Insertion Loss 8 iliconix -288 Rev., 28-Apr-97
G417/418/419 Test ircuits (ont d) N V, 2.4 V G417/418 Meter HP4192A Impedance Analyzer or Equivalent V, 2.4 V G419 2 1 Meter HP4192A Impedance Analyzer or Equivalent GN f = 1 MHz GN f = 1 MHz Figure 9. ource/rain apacitances Applications witched ignal Powers Analog witch The analog switch in Figure 1 derives power from its input signal, provided the input signal amplitude exceeds 4 V and its frequency exceeds 1 khz. This circuit is useful when signals have to be routed to either of two remote loads. Only three conductors are required: one for the signal to be switched, one for the control signal and a common return. A positive input pulse turns on the clamping diode 1 and charges 1. The charge stored on 1 is used to power the chip; operation is satisfactory because the switch requires less than 1 A of stand-by supply current. Loading of the signal source is imperceptible. The G419 s on-resistance is a low 1 for a -V input signal. 1 1.1 F Input UT ontrol G419 GN 1 1 k 2 1 k Figure 1. witched ignal Powers Remote PT Analog witch iliconix -288 Rev., 28-Apr-97 9
G417/418/419 Applications (ont d) Micropower UP Transfer witch When V drops to 3.3 V, the G417 changes states, closing W 1 and connecting the backup cell, as shown in Figure 11. 1 prevents current from leaking back towards the rest of the circuit. urrent consumption by the MO analog switch is around 1 pa; this ensures that most of the power available is applied to the memory, where it is really needed. In the stand-by mode, hundreds of A are sufficient to retain memory data. When the -V supply comes back up, the resistor divider senses the presence of at least 3. V, and causes a new change of state in the analog switch, restoring normal operation. Programmable Gain Amplifier The G419, as shown in Figure 12, allows accurate gain selection in a small package. witching into virtual ground reduces distortion caused by r (on) variation as a function of analog signal amplitude. GaAs FET river The G419, as shown in Figure 13 may be used as a GaAs FET driver. It translates a TTL control signal into 8-V, -V level outputs to drive the gate. V ( V) 1 R 1 43 k V ENE Memory V W L 1 G417 + 3 i ell R 2 383 k GN Figure 11. Micropower UP ircuit G419 R 1 R 2 GaAs FET UT V UT V GN G419 + 8 V Figure 12. Programmable Gain Amplifier Figure 13. GaAs FET river 1 iliconix -288 Rev., 28-Apr-97