N-Channel Lateral DMOS FETs (Available Only In Extended Hi-Rel Flow) SDDE-/DE- Part Number V (BR)DS Min (V) V GS(th) Max (V) r DS(on) Max ( ) C rss Max (pf) t ON Max (ns) SDDE-. @ V GS = V. SDDE-. @ V GS = V. Ultra-High Speed Switching t ON : ns Ultra-Low Reverse Capacitance:. pf Low Guaranteed r DS @ V Low Turn-On Threshold Voltage N-Channel Enhancement Mode High Speed System Performance Low Insertion Loss at High Frequencies Low Transfer Signal Loss Simple Driver Requirement Single Supply Operation Fast Analog Switch Fast Sample-and-Holds Pixel-Rate Switching DAC Deglitchers High-Speed Driver The SDDE-/DE- are enhancement-mode MOSFETs designed for high speed low-glitch switching in audio, video, and high-frequency applications. The SDDE- is normally used for -V analog switching. These MOSFETs utilize lateral construction to achieve low capacitance and ultra-fast switching speeds. These MOSFETs do not have a gate protection Zener diode which results in lower gate leakage and voltage capability from gate to substrate. A poly-silicon gate is featured for manufacturing reliability. The SDDE/DE are available only in the extended hi-rel flow. The flow complies with the requirements of MIL-PRF-9 for JANTX discrete devices. For similar products see: quad array SDI-, and Zener protected SDDE-/DE-/DE-. TO-6AF (TO-7) S Body Substrate (Case) D G Top View Gate-Drain, Gate-Source Voltage............................... V Gate-Substrate Voltage....................................... V Drain-Source Voltage SDDE-........................ V SDDE-)........................ V Source-Drain Voltage SDDE- V SDDE- V Drain-Substrate Voltage SDDE- V SDDE- V Source-Substrate Voltage SDDE- V SDDE- V Drain Current................................................ ma Lead Temperature ( / 6 from case for seconds)................ C Storage Temperature.................................... 6 to C Operating Junction Temperature.......................... to C Power Dissipation a.......................................... mw Notes: a. Derate mw/ C above C Applications Information See Applications Note AN Document Number: 79 S-889 Rev. E, -Dec-
SDDE-/DE- Limits SDDE- SDDE- Parameter Symbol b Test Conditions b Typ c Min Max Min Max Unit Static V GS = V BS = V, I D = A Drain-Source Breakdown Voltage V (BR)DS V GS = V BS = V, I D = na Source-Drain Breakdown Voltage V (BR)SD V GD = V BD = V, I S = na Drain-Substrate Breakdown Voltage V (BR)DBO V GB = V, I D = na, Source Open V Source-Substrate Breakdown Voltage V (BR)SBO V GB = V, I S = A, Drain Open Drain-Source Leakage I DS(off) V GS = V BS = V Source-Drain Leakage I SD(off) V GD = V BD = V V DS = V. V DS = V.9 V SD = V. na V SD = V.8 Gate Leakage I GBS V DB = V SB = V, V GB = V... Threshold Voltage V GS(th) V DS = V GS, I D = A, V SB = V.8.... V V GS = V 8 7 7 V Drain-Source On-Resistance r SB = V DS(on) I D = ma V GS = V 8 V GS = V V GS = V 6 V GS = V Dynamic Forward Transconductance g fs g os V DS = V, V SB = V, I D = ma f = khz.9 ms Gate Node Capacitance C (GS+GD+GB)... Drain Node Capacitance C (GD+DB) V DS = V, f = MHz... Source Node Capacitance C (GS+SB) V GS = V BS = V.7.. pf Reverse Transfer Capacitance C rss... Switching Turn-On Time Turn-Off Time t d(on). t r VSB V = V, V IN to V, R G =.6 t d(off) V DD = V, R L = 68 t f 6 ns Notes: a. unless otherwise noted. DMCBB b. B is is the body (substrate) and V (BR) is breakdown. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. Document Number: 79 S-889 Rev. E, -Dec-
SDDE-/DE- rds(on) Drain-Source On-Resistance ( ) 8 6 On-Resistance vs. Gate-Source Voltage V GS = V V V Leakage na na pa pa Leakage Current vs. Applied Voltage ID (off) @ VGS = VBG = V IS(off) @ VGD = VBD = V ISBO @ VGB = V, Drain Open I S(off) I SBO I GSS (Diode) I D(off) 8 6 V SB Source-Body Voltage (V) pa 8 6 Applied Voltage (V) ( ) rds(on) Drain-Source On-Resistance ( ) R L 8 6 7 6 On-Resistance vs. Temperature I D = ma, V BS = V V GS = V V V V 6 6 Switching Characteristics 6 7 gfs Forward Transconductance V GS(th) Gate-Source Threshold Voltage (V) 6 8 Common-Source Forward Transconductance vs. Drain Current V DS = V V BS = V T A = C C C I D Drain Current (ma) Threshold Voltage vs. Temperature V GS = V DS = V TH I D = ma V BS = V V V V. V 6 6 t f Fall Time (ns) Document Number: 79 S-889 Rev. E, -Dec-
SDDE-/DE- V GS(th) Gate-Source Threshold Voltage (V) Threshold Voltage vs. Substrate-Source Voltage V GS = V DS = V TH I D = A H L Leakage (na) Leakage Current vs. Temperature I D(off) @ V GS = V BS = V, V DS = V I S(off) @ V GD = V BD = V, V SD = V I GSS @ V GS = V I SBO @ V SB = V Drain Open I GSS (Diode) I S(off) I D(off) I SBO 8 6 7 V BS Body-Source Voltage (V) 8 Capacitance vs. Gate-Source Voltage V DS = V, f = MHz V GS = V BS A A A Body Leakage Current vs. Drain-Body Voltage I D = ma Capacitance (pf) 6 C (GS+SB) C (GS+GD+GB) C (GD+DB) Body Leakage I B na na na pa pa ma C (DG) 8 6 pa 8 6 V GS Gate-Source Voltage (V) V DB Drain-Body Voltage (V) V DS = V I D = ma Input Admittance V DS = V I D = ma Forward Admittance g fs b is g is b fs.. Document Number: 79 S-889 Rev. E, -Dec-
SDDE-/DE- V DS = V I D = ma Reverse Admittance V DS = V I D = ma Output Admittance 9 b rs. +g rg b og. g rg g og.. V BS = V Output Characteristics. Output Conductance vs. Drain Current V BS = V f = khz Drain Current (ma) I D V GS = V V V V gos Output Conductance.8.6.. V V V DS = V 8 6 8 6 V DS Drain-Source Voltage (V) I D Drain Current (ma) To Scope +V DD + V R L V OUT To Scope V IN V % V IN Input pulse: td, tr < ns Pulse width: ns Rep rate: MHz t d(on) t d(off) Sampling Scope tr < 6 ps RIN = M CIN = pf BW = MHz +V DD V OUT V t r % % t f 9% Document Number: 79 S-889 Rev. E, -Dec-