FM769 N-Channel PowerTrench MOFET 3 V, 9. mω Features Max r (on) = 9. mω at V G = V, I = 3. A Max r (on) =. mω at V G =. V, I =. A Advanced Package and ilicon combination for low r (on) and high efficiency Next generation enhanced body diode technology, engineered for soft recovery ML robust package design % UIL tested RoH Compliant General escription This N-Channel MOFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of C/C converters using either synchronous or conventional switching PWM controllers.it has been optimized for low gate charge, low r (on), fast switching speed ang body diode reverse recovery performance. Applications IMVP Vcore witching for Notebook VRM Vcore witching for esktop and server OringFET / Load witching C-C Conversion FM769 N-Channel PowerTrench MOFET Top Bottom Pin G G 6 3 7 Power 6 8 MOFET Maximum Ratings T A = C unless otherwise noted ymbol Parameter Ratings Units V rain to ource Voltage 3 V V G Gate to ource Voltage (Note ) ± V I Thermal Characteristics rain Current -Continuous (Package limited) T C = C -Continuous (ilicon limited) T C = C -Continuous T A = C (Note a) 3. -Pulsed E A ingle Pulse Avalanche Energy (Note 3) mj Power issipation T C = C 7 P Power issipation T A = C (Note a). T J, T TG Operating and torage Junction Temperature Range - to + C A W R θjc Thermal Resistance, Junction to Case. R θja Thermal Resistance, Junction to Ambient (Note a) Package Marking and Ordering Information C/W evice Marking evice Package Reel ize Tape Width Quantity FM769 FM769 Power 6 3 mm 3 units emiconductor Components Industries, LLC. October-7, Rev.3 Publication Order Number: FM769/
Electrical Characteristics T J = C unless otherwise noted ymbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV rain to ource Breakdown Voltage I = μa, V G = V 3 V ΔBV Breakdown Voltage Temperature ΔT J Coefficient I = μa, referenced to C 6 mv/ C I Zero Gate Voltage rain Current V = V, V G = V μa I G Gate to ource Leakage Current, Forward V G = V, V = V na On Characteristics V G(th) Gate to ource Threshold Voltage V G = V, I = μa.. 3. V ΔV G(th) ΔT J Gate to ource Threshold Voltage Temperature Coefficient I = μa, referenced to C -6 mv/ C V G = V, I = 3. A 7.6 9. r (on) tatic rain to ource On Resistance V G =. V, I =. A.. mω V G = V, I = 3. A, T J = C.6 3.3 g F Forward Transconductance V = V, I = 3. A ynamic Characteristics C iss Input Capacitance 6 pf V = V, V G = V, C oss Output Capacitance 33 7 pf f = MHz C rss Reverse Transfer Capacitance 36 pf R g Gate Resistance.8.6 Ω FM769 N-Channel PowerTrench MOFET witching Characteristics t d(on) Turn-On elay Time 8. 7 ns t r Rise Time V = V, I = 3. A, ns t d(off) Turn-Off elay Time V G = V, R GEN = 6 Ω 8 33 ns t f Fall Time.6 ns Q g Total Gate Charge V G = V to V nc Q g Total Gate Charge V G = V to. V V = V, 7 nc Q gs Gate to ource Charge I = 3. A 3.3 nc Q gd Gate to rain Miller Charge. nc rain-ource iode Characteristics V G = V, I =. A (Note ).76. V ource to rain iode Forward Voltage V V G = V, I = 3. A (Note ).8. t rr Reverse Recovery Time 3 37 ns I F = 3. A, di/dt = A/μs Q rr Reverse Recovery Charge 7 nc t rr Reverse Recovery Time 8 33 ns I F = 3. A, di/dt = 3 A/μs Q rr Reverse Recovery Charge 6 nc Notes:. R θja is determined with the device mounted on a in pad oz copper pad on a. x. in. board of FR- material. R θjc is guaranteed by design while R θca is determined by the user's board design. a) C/W when mounted on a b) in pad of oz copper C/W when mounted on a minimum pad of oz copper.. Pulse Test: Pulse Width < 3 μs, uty cycle <.%. 3. E A of mj is based on starting T J = C, L =.3 mh, I A = A, V = 7 V, V G = V. % test at L =. mh, I A = A.. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
Typical Characteristics T J = C unless otherwise noted I, RAIN CURRENT (A) NORMALIZE RAIN TO OURCE ON-REITANCE 3 PULE URATION = 8 μs UTY CYCLE =.% MAX 3.6...3....9 Figure. I = 3. A V G = V V G =. V V G = V V G = V V, RAIN TO OURCE VOLTAGE (V) V G = V V G = 3. V NORMALIZE RAIN TO OURCE ON-REITANCE V G = V PULE URATION = 8 μs V G = V UTY CYCLE =.% MAX 3 On Region Characteristics Figure. Normalized On-Resistance vs rain Current and Gate Voltage.8-7 - - 7 T J, JUNCTION TEMPERATURE ( o C) r(on), RAIN TO OURCE ON-REITANCE (mω) 3 3 V G = 3. V V G = V I, RAIN CURRENT (A) I = 3. A V G =. V PULE URATION = 8 μs UTY CYCLE =.% MAX T J = o C T J = o C 6 8 V G, GATE TO OURCE VOLTAGE (V) FM769 N-Channel PowerTrench MOFET Figure 3. Normalized On Resistance vs Junction Temperature Figure. On-Resistance vs Gate to ource Voltage I, RAIN CURRENT (A) 3 PULE URATION = 8 μs UTY CYCLE =.% MAX V = V T J = o C T J = o C T J = - o C 3 V G, GATE TO OURCE VOLTAGE (V) I, REVERE RAIN CURRENT (A). V G = V T J = o C T J = o C T J = - o C....6.8.. V, BOY IOE FORWAR VOLTAGE (V) Figure. Transfer Characteristics Figure 6. ource to rain iode Forward Voltage vs ource Current 3
Typical Characteristics T J = C unless otherwise noted VG, GATE TO OURCE VOLTAGE (V) 8 6 I = 3. A 8 6 Figure 7. V = V V = V Q g, GATE CHARGE (nc) V = V. 3 V, RAIN TO OURCE VOLTAGE (V) Gate Charge Characteristics Figure 8. Capacitance vs rain to ource Voltage CAPACITANCE (pf) f = MHz V G = V C iss C oss C rss FM769 N-Channel PowerTrench MOFET IA, AVALANCHE CURRENT (A) T J = o C T J = o C T J = o C.. t AV, TIME IN AVALANCHE (ms) I, RAIN CURRENT (A) 3 V G =. V V G = V Limited by Package R θjc =. o C/W 7 T C, CAE TEMPERATURE ( o C) Figure 9. Unclamped Inductive witching Capability Figure. Maximum Continuous rain Current vs Case Temperature I, RAIN CURRENT (A) us ms THI AREA I ms LIMITE BY r (on) ms INGLE PULE s. T J = MAX RATE s R θja = o C/W C T A = o C... V, RAIN to OURCE VOLTAGE (V) P(PK), PEAK TRANIENT POWER (W) V G = V INGLE PULE R θja = o C/W T A = o C. - -3 - - t, PULE WITH (sec) Figure. Forward Bias afe Operating Area Figure. ingle Pulse Maximum Power issipation
Typical Characteristics T J = C unless otherwise noted NORMALIZE THERMAL IMPEANCE, Z θja.. UTY CYCLE-ECENING ORER =....... - -3 - - t, RECTANGULAR PULE URATION (sec) Figure 3. INGLE PULE R θja = o C/W P M t t NOTE: UTY FACTOR: = t /t PEAK T J = P M x Z θja x R θja + T A Junction-to-Ambient Transient Thermal Response Curve FM769 N-Channel PowerTrench MOFET
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