442A N-Channel Enhancement Mode Field Effect Transistor Features V (V) = 2V I = 12A R (ON) < 1mΩ (V G = 4.5V) R (ON) < 12mΩ (V G = 2.5V) G OIC-8 G Absolute Maximum Ratings unless otherwise noted Parameter ymbol rain-ource Voltage V Gate-ource Voltage Continuous rain Current A Pulsed rain Current B V G I I M Maximum 2 ±12 12 8 Units V V A Power issipation Junction and torage Temperature Range P T J, T TG 3-55 to 15 W C Thermal Characteristics Parameter ymbol Typ Max Units Maximum Junction-to-Ambient A t 1s 23 4 C/W R θja Maximum Junction-to-Ambient A teady-tate 48 65 C/W Maximum Junction-to-Lead C teady-tate R θjl 12 16 C/W
Electrical Characteristics (T J =25 C unless otherwise noted) 442A ymbol Parameter Conditions Min Typ Max Units TATIC PARAMETER BV rain-ource Breakdown Voltage I =25µA, V G =V 2 V I Zero Gate Voltage rain Current V =16V, V G =V 1 µa I G Gate-Body leakage current V =V, V G = ±12V 1 na V G(th) Gate Threshold Voltage V =V G I =25µA.6.8 1.2 V I (ON) On state drain current V G =4.5V, V =5V 6 A R (ON) tatic rain-ource On-Resistance VG=4.5V, I=12A 1 11 mω V G =2.5V, I =1A 11 12 mω g F Forward Transconductance V =5V, I =5A 25 5 V iode Forward Voltage I =12A,V G =V.8 1 V I Maximum Body-iode Continuous Current 4.5 A YNAMIC PARAMETER C iss Input Capacitance 163 pf C oss Output Capacitance V G =V, V =15V, f=1mhz 21 pf C rss Reverse Transfer Capacitance 142 pf R g Gate resistance V G =V, V =V, f=1mhz.8 Ω WITCHING PARAMETER Q g Total Gate Charge 19 nc Q gs Gate ource Charge V G =4.5V, V =15V, I =12A 3.3 nc Q gd Gate rain Charge 5.2 nc t (on) Turn-On elaytime 3 ns t r Turn-On Rise Time V G =1V, V =15V, R L =1.2Ω, 4.7 ns t (off) Turn-Off elaytime R GEN =3Ω 33.5 ns t f Turn-Off Fall Time 6 ns t rr Body iode Reverse Recovery Time I F =1A, di/dt=1a/µs 21 ns Q rr Body iode Reverse Recovery Charge I F =1A, di/dt=1a/µs 11 nc A: The value of R θja is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25 C. The value in any a given application depends on the user's specific board design. The current rating is based on the t 1s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θja is the sum of the thermal impedence from junction to lead R θjl and lead to ambient.. The static characteristics in Figures 1 to 6 are obtained using 8 µs pulses, duty cycle.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25 C. The OA curve provides a single pulse rating.
442A TYPICAL ELECTRICAL AN THERMAL CHARACTERITIC 4 3 1V 2.5V 4.5V 3V 2V 3 25 2 V =5V I (A) 2 1 V G =1.5V I (A) 15 1 5 125 C 25 C 1 2 3 4 5 V (Volts) Fig 1: On-Region Characteristics.5 1 1.5 2 2.5 3 V G (Volts) Figure 2: Transfer Characteristics 25 1.8 R (ON) (mω) 2 15 1 5 V G =2.5V V G =1V V G =4.5V Normalized On-Resistance 1.6 1.4 1.2 1 I =1A V G =1V V G =4.5V V G =2.5V 5 1 15 2 25 3 I (A) Figure 3: On-Resistance vs. rain Current and Gate Voltage.8 25 5 75 1 125 15 175 Temperature ( C) Figure 4: On-Resistance vs. Junction Temperature 4. I =1A 1.E+2 1.E+1 V G =V R (ON) (mω) 3. 2. 1. 125 C 25 C I (A) 1.E+ 1.E-1 1.E-2 1.E-3 125 C 25 C 1.E-4.. 2. 4. 6. 8. 1. V G (Volts) Figure 5: On-Resistance vs. Gate-ource Voltage 1.E-5..2.4.6.8 1. 1.2 V (Volts) Figure 6: Body-iode Characteristics
442A TYPICAL ELECTRICAL AN THERMAL CHARACTERITIC V G (Volts) 5 4 3 2 1 V =15V I =12A 4 8 12 16 2 24 Q g (nc) Figure 7: Gate-Charge Characteristics Capacitance (pf) 25 225 2 175 15 125 1 75 5 25 C oss Crss C iss 5 1 15 2 25 3 V (Volts) Figure 8: Capacitance Characteristics I (Amps) 1. 1. 1..1 R (ON) limited T J(Max) =15 C 1ms 1ms.1s.1 1 1 1 V (Volts) 1s 1s C Figure 9: Maximum Forward Biased afe Operating Area (Note E) 1µs Power (W) 5 4 3 2 1 T J(Max) =15 C.1.1.1 1 1 1 1 Pulse Width (s) Figure 1: ingle Pulse Power Rating Junction-to- Ambient (Note E) Z θja Normalized Transient Thermal Resistance 1 1.1 =T on /T T J,PK =T A +P M.Z θja.r θja R θja =4 C/W ingle Pulse In descending order =.5,.3,.1,.5,.2,.1, single pulse P T on T.1.1.1.1.1.1 1 1 1 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
O-8 Package ata 442A YMBOL A A1 A2 b c E1 e E h L aaa θ IMENION IN MILLIMETER MAX IMENION IN INCHE MIN NOM MIN NOM MAX 1.45 1.5 1.55.57.59.61..1..4.33.19 4.8 3.8 1.45.51.25 5. 4..13.7.189.15.57.2.1.197.157 1.27 BC.5 BC 5.8 6.2.228.244.25.4.5 1.27.1.1.16.2.5.4 8 8 θ NOTE: 1. LEA FINIH: 15 MICROINCHE ( 3.8 um) MIN. THICKNE OF Tin/Lead (OLER) PLATE ON LEA 2. TOLERANCE ±.1 mm (4 mil) UNLE OTHERWIE PECIFIE 3. COPLANARITY :.1 mm 4. IMENION L I MEAURE IN GAGE PLANE
442A O-8 Tape and Reel ata O-8 Carrier Tape O-8 Reel O-8 Tape Leader / Trailer & Orientation