PRELIMINARY TO-247. Conditions. T C = 25 C T C = 100 C T j = 25 C V DD < 800 V, T C < 125 C AC (2) Symbol. R th,jc R th,ja

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1 NormallyOn Trench Power JFET Features: Positive Temperature Coefficient for Ease of Paralleling Extremely Fast Switching with No "Tail" Current at 1 C R DS(on) typical of.35 oltage Controlled Low Gate Charge Low Intrinsic Capacitance 4 Product Summary B DS 1 R DS(on)max.45 G(1) D(2,4) Applications: TO247 Solar Inverter S(3) SMPS Power Factor Correction Internal Schematic Induction Heating UPS Motor Drive MAXIMUM RATINGS Parameter Symbol Conditions alue Unit Continuous Drain Current Pulsed Drain Current (1) Short Circuit Withstand Time Power Dissipation I D, TC=25 I D, TC=1 I DM t SC P D T C = 25 C T C = 1 C T j = 25 C DD < 8, T C < 125 C T C = 25 C A A µs W GateSource oltage GS AC (2) 15 to +15 Operating and Storage Temperature T j, T stg 55 to +1 C T sold Lead Temperature for Soldering 1/8" from case < 1 s 2 C (1) Pulse width limited by maximum junction temperature (2) Rg (EXT) = 1 ohm, t p < ns, see Figure 5 for static conditions THERMAL CHARACTERISTICS Parameter Thermal Resistance, junctiontocase Thermal Resistance, junctiontoambient Symbol R th,jc R th,ja Typ alue Max.6 Unit C / W Rev1.3 1/6 May 11

2 ELECTRICAL CHARACTERISTICS Parameter Symbol Conditions Min alue Typ Max Unit Off Characteristics DrainSource Blocking oltage Total Drain Leakage Current Total Gate Reverse Leakage B DS I DSS I GSS GS = 15, I D = 1 µa DS = 1, GS = 15, T j = 25 o C DS = 1, GS = 15, T j = 1 o C GS = 15, DS = 1.2 GS = 15, DS = µa ma On Characteristics DrainSource Onresistance Gate Threshold oltage Gate Forward Current Gate Resistance R DS(on) GS(th) I GFWD R G R G(on) I D = 3 A, GS = 2, T j = 25 C I D = 3 A, GS = 2, T j = 1 C DS = 1, I D = 7 ma GS = 2 f = 1 MHz, drainsource shorted GS >2.7; See Figure µa.25 Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance, energy related C iss C oss C rss C o(er) DD = 1, GS = 15 f = 1 khz DS = to, GS = pf Switching Characteristics Turnon Delay Rise Time Turnoff Delay Fall Time Turnon Energy Turnoff Energy Total Switching Energy Turnon Delay Rise Time Turnoff Delay Fall Time Turnon Energy Turnoff Energy Total Switching Energy Total Gate Charge GateSource Charge GateDrain Charge t on t r t off t f E on E off E ts t on t r t off t f E on E off E ts Q g Q gs Q gd DS =, I D = 3 A, Inductive Load, T j = 25 o C Gate Driver = +15, 15, Rg (EXT) = 1 DS =, I D = 3 A, Inductive Load, T j = 1 o C Gate Driver = +15, 15, Rg (EXT) = 1 DS =, I D = 15 A, GS = Rev1.3 2/6 May ns µj ns µj nc

3 Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics I D = f( DS ); T j = 25 C; parameter: GS I D = f( DS ); T j = 1 C; parameter: GS DS, DrainSource oltage () DS, DrainSource oltage () Figure 3. Typical Output Characteristics I D = f( DS ); T j = 1 C; parameter: GS Figure 4. Typical Transfer Characteristics 1 I D = f( GS ); DS = 5 ; T j = 25 o C DS, DrainSource oltage () GS, GateSource oltage () I G, Gate Current (A) Figure 5. Gate Current I G = f( GS ); parameter: T j 1.E2 1.E3 1 o C 1.E4 1.E5 25 o C 1.E6 1.E7 1.E8 1.E9 1.E GS, GateSource oltage () R DS(on), DrainSource Onresistance () Figure 6. DrainSource Onresistance R DS(on) = f(i D ); GS = 2.; parameter: T j o C 1 o C 25 o C 1 1 Rev1.3 3/6 May 11

4 R DS(on), DrainSource Onresistance () Figure 7. DrainSource Onresistance R DS(ON) = f(t j ); I D = 3A; parameter: GS T j, Junction Temperature ( C) PRELIMINARY R DS(on), DrainSource Onresistance () Figure 8. DrainSource Onresistance R DS(on) = f( GS ); I D = 3A; T j = 25 o C GS, GateSource oltage () Figure 9. Typical Capacitance C = f( DS ); GS = 15 ; f = 1 khz Figure 1. DrainSource Leakage I DSS = f( DS ); GS = 15; parameter: T j 1.E+4 1E4 C, Capacitance (pf) 1.E+3 1.E+2 1.E+1 C iss C oss C rss DS, DrainSource oltage () I DSS, Drain Leakage Current (A) 1E5 1E6 1E7 1 o C 1 o C 25 o C DS, DrainSource oltage () Rev1.3 4/6 May 11

5 PRELIMINARY DIM MILLIMETERS INCHES MIN MAX MIN MAX A A A b b b c D D D e E E L L Q ØP ØP Rev1.3 5/6 May 11

6 Published by SemiSouth Laboratories, Inc. 1 Research Boulevard Starkville, MS USA SemiSouth Laboratories, Inc. 11 Information in this document supersedes and replaces all information previously supplied. Information in this document is provided solely in connection with SemiSouth products. SemiSouth Laboratories, Inc. reserves the right to make changes, corrections, modifications or improvements, to this document without notice. No license, express or implied to any intellectual property rights is granted under this document. Unless expressly approved in writing by an authorized representative of SemiSouth, SemiSouth products are not designed, authorized or warranted for use in military, aircraft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or property or environmental damage. Rev1.3 6/6 May 11