The k p Method. Electronic Properties of Semiconductors. Bearbeitet von Lok C Lew Yan Voon, Morten Willatzen
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1 The k p Method Electronic Properties of Semiconductors Bearbeitet von Lok C Lew Yan Voon, Morten Willatzen 1. Auflage Buch. xi, 445 S. Hardcover ISBN Format (B x L): 15,5 x 23,5 cm Gewicht: 1830 g Weitere Fachgebiete > Technik > Werkstoffkunde, Mechanische Technologie > Materialwissenschaft: Elektronik, Optik Zu Leseprobe schnell und portofrei erhältlich bei Die Online-Fachbuchhandlung beck-shop.de ist spezialisiert auf Fachbücher, insbesondere Recht, Steuern und Wirtschaft. Im Sortiment finden Sie alle Medien (Bücher, Zeitschriften, CDs, ebooks, etc.) aller Verlage. Ergänzt wird das Programm durch Services wie Neuerscheinungsdienst oder Zusammenstellungen von Büchern zu Sonderpreisen. Der Shop führt mehr als 8 Millionen Produkte.
2 Contents Acronyms... xxi 1 Introduction What Is k p Theory? Electronic Properties of Semiconductors Other Books Part I Homogeneous Crystals 2 One-Band Model Overview k p Equation Perturbation Theory Canonical Transformation EffectiveMasses Electron LightHole HeavyHole Nonparabolicity Summary Perturbation Theory Valence Band Overview Dresselhaus Kip Kittel Model Hamiltonian Eigenvalues L, M, N Parameters Properties Six-Band Model for Diamond Hamiltonian DKKSolution KaneSolution xiii
3 xiv Contents 3.4 Wurtzite Overview BasisStates Chuang Chang Hamiltonian Gutsche Jahne Hamiltonian Summary Perturbation Theory Kane Models Overview First-Order Models Four-Band Model Eight-Band Model Second-Order Kane Model LöwdinPerturbation Four-Band Model Full-Zone k p Model Band Model Other Models Wurtzite Four-Band: Andreev-O Reilly Eight-Band: Chuang Chang Eight-Band: Gutsche Jahne Summary Method of Invariants Overview DKKHamiltonian HybridMethod Formalism Introduction SpatialSymmetries SpinorRepresentation Valence Band of Diamond NoSpin Magnetic Field Spin-OrbitInteraction Six-Band Model for Diamond Spin-OrbitInteraction k-dependent Part Four-Band Model for Zincblende Eight-Band Model for Zincblende WeilerHamiltonian Band Model for Zincblende SymmetrizedMatrices InvariantHamiltonian...123
4 Contents xv T BasisMatrices Parameters Wurtzite Six-Band Model Quasi-CubicApproximation Eight-Band Model MethodofInvariantsRevisited Zincblende Wurtzite Summary Spin Splitting Overview Dresselhaus Effect in Zincblende Conduction State Valence States Extended Kane Model Sign of Spin-Splitting Coefficients Linear Spin Splittings in Wurtzite Lower Conduction-Band e States A, B, C Valence States Linear Spin Splitting Summary Strain Overview Perturbation Theory StrainHamiltonian Löwdin Renormalization Valence Band of Diamond DKKHamiltonian Four-BandBir PikusHamiltonian Six-BandHamiltonian MethodofInvariants StrainedEnergies Four-Band Model Six-Band Model DeformationPotentials Eight-Band Model for Zincblende Perturbation Theory MethodofInvariants Wurtzite Perturbation Theory MethodofInvariants...184
5 xvi Contents Examples Summary Part II Nonperiodic Problem 8 Shallow Impurity States Overview Kittel Mitchell Theory Exact Theory Wannier Equation Donor States Acceptor States Luttinger Kohn Theory Simple Bands Degenerate Bands Spin-OrbitCoupling Baldereschi Lipari Model Hamiltonian Solution Summary Magnetic Effects Overview Canonical Transformation One-Band Model Degenerate Bands Spin-OrbitCoupling Valence-Band Landau Levels Exact Solution General Solution Extended Kane Model Landé g-factor Zincblende Wurtzite Summary Electric Field Overview One-Band Model of Stark Effect Multiband Stark Problem Basis Functions MatrixElementsoftheCoordinateOperator Multiband Hamiltonian Explicit Form of Hamiltonian Matrix Contributions
6 Contents xvii 10.4 Summary Excitons Overview ExcitonicHamiltonian One-Band Model of Excitons Multiband Theory of Excitons Formalism ResultsandDiscussions Zincblende Magnetoexciton Summary Heterostructures: Basic Formalism Overview Bastard s Theory Envelope-Function Approximation Solution Example Models General Properties One-Band Models Derivation Burt Foreman Theory Overview Envelope-Function Expansion Envelope-Function Equation Potential-EnergyTerm Conventional Results Boundary Conditions Burt ForemanHamiltonian Beyond Burt Foreman Theory? Sercel Vahala Theory Overview Spherical Representation CylindricalRepresentation Four-Band Hamiltonian in Cylindrical Polar Coordinates WurtziteStructure Arbitrary Nanostructure Orientation Overview RotationMatrix General Theory [110] Quantum Wires Spurious Solutions Summary...361
7 xviii Contents 13 Heterostructures: Further Topics Overview Spin Splitting Zincblende Superlattices StraininHeterostructures ExternalStress StrainedHeterostructures ImpurityStates Donor States Acceptor States Excitons One-Band Model Type-IIExcitons Multiband Theory of Excitons Magnetic Problem One-Band Model Multiband Model StaticElectricField TransverseStarkEffect LongitudinalStarkEffect Multiband Theory Conclusion A Quantum Mechanics and Group Theory A.1 Löwdin Perturbation Theory A.1.1 Variational Principle A.1.2 PerturbationFormula A.2 Group Representation Theory A.2.1 Great Orthogonality Theorem A.2.2 Characters A.3 Angular-Momentum Theory A.3.1 Angular Momenta A.3.2 Spherical Tensors A.3.3 Wigner-Eckart Theorem A.3.4 Wigner 3 j Symbols B Symmetry Properties B.1 Introduction B.2 Zincblende B.2.1 PointGroup B.2.2 Irreducible Representations B.3 Diamond B.3.1 SymmetryOperators B.3.2 Irreducible Representations
8 Contents xix B.4 Wurtzite B.4.1 Irreducible Representations C Hamiltonians C.1 BasisMatrices C.1.1 s = C.1.2 l = C.1.3 J = C.2 JM J States C.3 Hamiltonians C.3.1 Notations C.3.2 Diamond C.3.3 Zincblende C.3.4 Wurtzite C.3.5 Heterostructures C.4 Summary of k p Parameters References Index...443
Lok С. Lew Yan Voon Morten Willatzen. The k-p Method. Electronic Properties of Semiconductors. Springer
Lok С. Lew Yan Voon Morten Willatzen The k-p Method Electronic Properties of Semiconductors Springer Acronyms xxi 1 Introduction 1 1.1 What Is к p Theory? 1 1.2 Electronic Properties of Semiconductors
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