Performance Analysis of GSM Coverage considering Spectral Efficiency, Interference and Cell Sectoring

Transcription

1 Inenainal Junal f Engineeing and Advanced Technlgy (IJEAT) ISSN: , Vlue-2, Iue-4, Apil 2013 efance Analyi f GSM Cveage cnideing Specal Efficiency, Inefeence and Cell Secing Afana Nadia, S. K. Adiya Abac In hi wk, he capaciy and cveage aea f GSM ye have been udied. Thi pape peen he ipance f uing budge calculain, deeining he pah l and cell ange f RF cveage planning and ipving capaciy uing cell-ecing. The aj cnibuin i eiae he cveage f GSM ye which depend n BS anenna heigh, aniing anenna gain, u pwe f BS f ppagain envinen uch a ual, ub-uban and uban cae. MATAB ha been ued f iulain and pefance evaluain f capaciy and cveage in GSM ye. ah l f up and dwn ha been calculaed uing ink Calcula fwae cnideing 3-ec anenna. Analyi eveal ha cveage aea ipve ignificanly cnideing pecal efficiency, inefeence and cell ecing. A an exaple, Ggle Eah and Radi Wk fwae have been ued eiae he cveage aea f a paicula aea. A 3D cveage ap ha been fulaed uing hi eul. Index Te Cell Secing, GSM Cveage, Inefeence pecal Efficiency I. INTRODUCTION In he ealy 1980, a buine wa becing inceaingly inenainal, he cunicain induy fcued excluively n lcal cellula luin, wih vey few cpaible ye. The pble wa lack f capaciy. By he ealy 1990, i wa clea ha analg echnlgy wuld n be able keep up wih deand [1. 1G andad culd n vece all he liiain, uch a, Capaciy liiain, any andad hughu he wld and n daa anfe faciliie. S he nex geneain (2 nd Geneain) cellula newk ae being deigned faciliae high peed daa cunicain affic. The ecnd-geneain (2G) bile cellula ye ue digial adi aniin f affic. Thu, he bunday line beween fi- and ecnd geneain ye i bviu: I i he analg/digial pli. The 2G newk have uch highe capaciy han he fi-geneain ye. NADC (Nh Aeican Digial Cellula) and DMS ae he ecnd geneain bile ye. The D-AMS ued exiing AMS channel and allw f h aniin beween digial and analgue ye in he ae aea. The AMS daa ae i 48.6 kbp. Bu D-AMS culd n al vece he liiain. S GSM (Glbal Sye f Mbile) wa induced. Manucip eceived n Apil, Afana Nadia, Depaen f Elecnic and Cunicain Engineeing, Ea We Univeiy, Dhaka, Bangladeh. S. K. Adiya, fe, Depaen f Applied hyic, Elecnic and Cunicain Engineeing, Dhaka Univeiy, Dhaka, Bangladeh. GSM i wldwide andad ha allw ue f diffeen pea cnnec and hae he evice iulaneuly. GSM ha been he backbne f he phenenal ucce in bile elecunicain ve he la decade. Nw, a he dawn f he ea f ue badband evice, GSM cninue evlve ee new deand. One f GSM' gea engh i i inenainal aing capabiliy, giving cnue a eale evice in abu 160 cunie. Thi ha been a vial dive in gwh, wih aund 300 illin GSM ubcibe cuenly in Eupe and Aia. The Eupean ealized hi ealy n, and in 1982 he Cnfeence f Eupean and Telegaph (CET) fed a udy gup called he Gup Special Mbile (GSM) udy and develp a pan-eupean blic land bile ye [1. Thi pape peen he ipac f he pecal efficiency, inefeence and cell ecing n cveage eiain in GSM. Effec f MS anenna heigh, BS anenna heigh and effec f u pwe f BS have been udied f diffeen aea. The e f hi pape i ganized a fllw. Secin II and III cnain he ye capaciy eiain cnideing inefeence and channel capaciy eiain cnideing pecal efficiency epecively. Secin IV decibe capaciy ipveen uing cell-ecing. Secin V and VI cnain he budge calculain and pah l and cell ange calculain epecively. In ecin VII and VIII, cveage and BS pwe ae eiaed epecively. In ecin IX, ah Mdel ae peened. Secin X give cncluin f he pape. II. INTERFERENCE AND SYSTEM CAACITY Inefeence i he aj liiing fac in he pefance f he cellula adi ye [2. The w aj ype f ye-geneaed cellula inefeence ae a fllw: A. C-channel Inefeence Fequency eue iplie ha a given cveage aea hee ae eveal cell ha ue he ae e f fequencie. Thee cell ae called c-channel cell and he inefeence beween he ignal f hee cell i called c-channel inefeence. F a hexagnal geey [2, D Q 3 N (1) R A all value f Q pvide lage capaciy ince he clue ize N i all, wheea a lage value f Q ipve he aniin qualiy due he alle level f c-channel inefeence [2. 115

2 efance Analyi f GSM Cveage Cnideing Specal Efficiency, Inefeence and Cell-Secing Fig. 1: C-channel Reue Rai veu Clue Size. B. Adjacen Channel Inefeence Inefeence euling f he ignal which ae adjacen in fequency he deied ignal i called adjacen channel inefeence [2. III. SECTRA EFFICIENCY Specal efficiency i defined a he ai f he daa ae in bi pe ecnd he effecively uilized channel bandwidh [3. Wih he value f B T, he channel daa ae i 271 kbp. Becaue he channel bandwidh i 200 khz, he pecal efficiency f GSM i A. Channel Capaciy Specal efficiency i diecly elaed capaciy. The highe he pecal efficiency, he geae he capaciy f he ye. Hee, capaciy i defined a he nube f channel pe MHz pe cell. F a TDMA ye, he capaciy i given by, F a TDMA ye, he capaciy i given by [4, N (1 ) MB (2) Whee N i he nube f ie l pe caie, i he facin f channel allcaed f ignaling, M i he clue ize, and B i he channel bandwidh. F he GSM ye, N i equal 8, and B i equal 200 khz. Wih pefec pwe cnl, fequency hpping and dicninuu aniin wih a vice aciviy fac (VAF) f ½, M i equal 4 uing ni-cell [4. Auing be equal 0.1, he GSM capaciy i hen, 8 (1 0.1) 9 channel / MHz / cell (3) Thee ae a nube f way in which capaciy can be inceaed. In GSM, hi can be achieved by a alle clue ize, ecizain, ipleening channel bwing chee, and aciviy fac. In GSM, ecizain cell in f a 3 ec will deceae he equied clue ize f 4 3. Thi give a capaciy gain f 4/3. IV. CAACITY IMROVEMENT USING CE-SECTORING The ecing echnique inceae he capaciy via a diffeen aegy. In hi ehd, a cell ha he ae cveage pace bu inead f uing a ingle ni-diecinal anenna ha ani in all diecin, eihe 3 6 diecinal anenna ae ued uch ha each f hee anenna pvide cveage a ec f he hexagn [5. Thee ae w ype f ecing: A. 120-Degee Secing When 3 diecinal anenna ae ued, 120 ecing i achieved (each anenna cve 120 ). F exaple, aue n=4. Then he N=4 clue wih 120 ec will have a w cae S/I a fac f 3 lage han he ypical ni cae value f / 6 24, hence dB. Thi i nealy he ae a he ypical N=7 cae ( / db). Ye u eue fac jup f 1/7 1/4, an inceae f 75% [6, [7. Fig. 3: C-channel Inefeence Rai veu Clue Size. B. 60-Degee Secing When 6 diecinal anenna ae ued, 60 ecing i achieved (each anenna cve 60 ). V. THE INK BUDGET CACUATION [8, [9 The deailed adi newk plan can be ub-divided in hee ub-plan: (1) ink budge calculain, (2) Cveage, capaciy planning and pecu efficiency, (3) aaee planning. A. Up Calculain Fig. 2: Capaciy Calculain. Fig. 4: Exaple f ink Budge Up Calculain. 116

3 ah (db) Uban (k) Sub-uban (k) Rual (k) Inenainal Junal f Engineeing and Advanced Technlgy (IJEAT) ISSN: , Vlue-2, Iue-4, Apil 2013 (ah in up) = EIR U (eak EIR f Mbile) (we Received by he bae ain) b EIR = G e = b (we anied f he MS) e + c (cable l a bile) + (any he l) = G (anenna gain) e + B (BTS eniiviy) e = = U b cb (cable l a BTS) + b EIR b (any he l) = [ U c + G [ G b + cb + b + B = [ [ (-4) = 149 db B. Dwn Calculain Fig. 5: Exaple f ink Budge Dwn Calculain. (ah in dwn) = EIR (peak EIR f BTS) d (we eceived by he MS) (we anied by BTS) + EIR = b b gain) e e = (cable l a BTS) + cb b G b (anenna ccb (cbine l a BTS) = M (Mbile eniiviy) + e G (bile anenna Gain) e = c (cable l) + (any he l) = d EIR b = [ d b + G b cb ccb [ M c G = [ [ = 152 db A can be een, hee i an bviu diffeence in he eul f he up and dwn pwe budge calculain, whee he dwn pah l exceed he up pwe l. Thi i an indicain ha he aea cveed by he bae ain anenna adiain i e han he aea cveed by he bile ain anenna, heeby giving e cveage in he dwn diecin. Reducing he pwe in he dwn diecin can educe hi diffeence bu eul in a l f cveage [8. VI. ATH OSS AND CE RANGE CACUATION In able I, pahl and cell ange ae calculaed f ud, ind and in ca by uing a ink Calcula whee he peaing fequency i 900 MHz. Hee we have g highe ahl (143 db) f ud han ind and in ca. We have g highe ange (22.9 k) f ual aea in ud whee he aniing anenna heigh (40), aniing u pwe (42 db), aniing anenna gain (18 dbi) and MS eniiviy (-4 db) ae cnan. Fequency 900 MHz Table I. ah and Cell Calculain Oud Up Dwn In ca Up Dwn Ind Up Dwn VII. COVERAGE ESTIMATION (i) We eiaed cveage by uing Gle Eah and Radi Wk fwae. We have calculaed diance (1.9 k) f Aadgae Shaukabad, Dhaka, Bangladeh. We have g laiude 23deg 45in 27.86ec N and lngiude 90deg 22in 26.35ec E f Ggle Eah. F hee value we have g 3D cveage ap in fig. 6. Fig. 6: 3D Cveage Map. (ii) In Haa Mdel (uban), BS anenna Heigh, MS anenna Heigh, diance beween bae/bile, aniin fequency ae f, f, i, 900MHz epecively f lage ciy. Finally we have g pah l/diance gaph f Radi Wk fwae. 117

4 efance Analyi f GSM Cveage Cnideing Specal Efficiency, Inefeence and Cell-Secing diance a hwn in fig. 9. F hee we can ee ha aniing pwe inceae wih he inceae in diance f uban, ub-uban, ual aea whee he eceiving anenna heigh i fixed. Taniing pwe inceae e wih inceae in diance f uban han ub-uban and ual aea. Inceaing he Cell Tani pwe inceae dwn cveage bu de n affec up cveage. Fig. 7: Diance/ ah Gaph. (iii) If we inceae he anie pwe f 20W 43W, hen diance will be inceaed f 1.9k k. Fig. 8: Diance/ we Gaph. VIII. BS OWER ESTIMATION Ou pwe f bae ain i fund f hee diffeen aea (uban, ububan and ual aea) by uing Haa-Okuua ppagain del [. F uban aea: in G G (4) u F ububan aea: in G G (5) u p F ual aea: in G G (6) aaee f hee fula: = Miniu eceive eniiviy in p G, G = Tanie and eceive anenna gain, p, p = f uban, ububan, pen ual aea epecively = Addiinal Diance in k f = Opeaing Fequency (900 MHz) c Fig. 9: Ou we f Bae Sain a a Funcin f Diance f Uban, Sub-Uban & Rual Aea, a f=900mhz, h()=2. Cen and Analyi: The aniing pwe f uban, ububan and ual aea ae pled a a funcin f Fig. : Ou we f BS veu Diance f Uban Aea a f = 900MHz, h() =2 and G() Vaied f 12 dbi 25 dbi. Cen and Analyi: Fig. i a pl f uban aea aniing pwe a a funcin f diance, a f = 900 MHz, h() = 2 and G() vaied f 12 dbi 25 dbi. F hee we can ee ha deceaing aniing anenna gain inceae aniing pwe f uban aea whee he eceiving anenna heigh i fixed. IX. ATH OSS MODES Haa Mdel: The del i an epiical fulain f he gaphical pah l daa pvided by Okuua. Haa peened he uban aea ppagain l a a andad fula and upplied cecin equain f he ype f aea [11. Uban Aea: lg f lg h( ) (7) ah( ) [ lg h( ) g d Whee, U = pagain l in uban aea (db) f = The caie fequency (150 MHz ~ 1500 MHz) h() = Bae ain anenna heigh ( ) h() = Mbile ain anenna heigh (1 ) d = Diance (1 20 K) F all ediu ciy: ah( ) (1.1g f 0.7) h( ) (db) (8) (1.56g f 0.8) F lage ciy: ah ( ) 3.2[ g(11.75h( )) (db) (9) 4.97 Whee, ah() i a cecin fac. Sububan aea [12, [13: f 2 p 2[lg () Whee, S Open Aea [12, [13: = pah l (db) in ububan aea. 118

5 Inenainal Junal f Engineeing and Advanced Technlgy (IJEAT) ISSN: , Vlue-2, Iue-4, Apil 2013 p 18.33lg Whee, 4.78[lg f f O = pah l (db) in pen aea. 2 (11) f MS anenna heigh and BS anenna heigh uing Okuua-Haa Mdel. In hi pape u pwe f he bae ain ha been al beved inceae wih diance f uban, ub-uban and ual aea. Thi pape ha hwn he ipance f uing budge calculain and deeining he pah l and cell ange f RF cveage planning. XI. ACKNOWEDGMENT The auh wuld like acknwledge wih hank he Mhahin Uddin ahan and Shaul Aefin, ecue, Depaen f Elecnic and Telecunicain Engineeing, Daffdil Inenainal Univeiy f hei valuable dicuin in he pepaain f hi pape. Fig. 11: ah a a Funcin f Diance f Uban, Sub-Uban & Open Aea, a f=900mhz, h()=40. Cen and Analyi: The pah l f uban, ububan and pen aea uing equain 7, and 11 ae pled a a funcin f diance a hwn in fig. 11. F hee we can ee ha pah l inceae wih he inceae in diance f uban, ub-uban, pen ual aea whee he aniing and eceiving anenna heigh ae fixed. ah l inceae e wih inceae in diance f uban han ub-uban and ual aea. Fig. 12: ah veu Diance f Uban Aea a f = 900MHz, h() =2 and h() Vaied f Cen and Analyi: Fig. 12 i a pl f uban aea pah l a a funcin f diance, a f = 900 MHz, h() = 2 and h() vaied f F hee we can ee ha inceaing aniing anenna heigh educe pah l f uban aea whee he eceiving anenna heigh ae fixed. X. CONCUSION In hi pape, he pefance analye in cveage f GSM uing inefeence, pecal efficiency and cell-ecing ha been iulaed and evaluaed f e paaee. The calculain ha dne f pah l and cell ange wih Micf Excel l and ink Calcula cnideing 3 eced anenna. Channel capaciy and ye capaciy ha been eiaed cnideing pecal efficiency and inefeence epecively uing MATAB. Cveage ha been eiaed by uing Ggle Eah and Radi Wk fwae. 3D cveage ap ha been fund uing hi eul. We have eiaed hw pah l f diffeen aea (uch a-uban, ub-uban, and ual) i changed wih he diance by he help REFERENCES [1 T. S.Rappap, Wiele Cunicain, 2nd Ediin, enice Hall, 2002, Ch. 1, pp [2 T. S.Rappap, Wiele Cunicain, 2nd Ediin, enice Hall, 2002, Ch. 3, pp [3 Haykin, S., Cunicain Sye, 4 h Ediin, Willey, Inc., Newyk, [4 Seele, R., ee, C.C., Guld,., GSM, cda One and 3G Sye, Jhn Wiley & Sn d, Baffin ane, Chichee, [5 D. Wajih A. Abu-Al-Saud, Ipving Cveage and Capaciy in Cellula Sye, ecue, EE 499: Wiele & Mbile Cunicain(082).Available:hp://faculy.kfup.edu.a/EE/waji h/file/ee%20499,%20ecue%20.pdf [6 Gag, V. K., and J. E. Wilke, Wiele and enal Cunicain Sye, enice Hall, 1996, ISBN [7 Suzan, W.. and G. A. Thiele, Anenna They and Deign, Wiley, 1998, ISBN [8 A.R. Miha, Fundaenal f Cellula Newk lanning & Opiiain, Jhn Wiley & Sn, 2004, Ch. 2, pp [9 J. epiäinen-m. Manninen, "Radi Ineface Sye lanning f GSM/GRS/UMTS", Kluwe Acadeic ublihe, [ Ali Hakan IŞIK, İnan Gula, Nvel Appach f Opiizain f Cell lanning and Capaciy, Inenainal Junal Of Cunicain, Iue 1, Vlue 3, [11 D. S. A. Mawjud, Evaluain f we Budge and Cell Cveage in Cellula GSM Sye, Al-Rafidain Engineeing, Vl.16 N [12 B. H. Walke, Mbile Radi Newk, Jhn Wiley and Sn, 2002, pp [13 K. ahlavan and A. H. eveque, Wiele Infain Newk, Jhn Wiley and Sn, 1995, pp Afana Nadia bained he B.Sc. Engineeing in Elecnic and Telecunicain Engineeing f Daffdil Inenainal Univeiy, Dhaka, Bangladeh in 2011 and M.S. Engineeing in Telecunicain Engineeing f Ea We Univeiy, Dhaka, Bangladeh in She i cuenly wking a a Gaduae Teaching/Reeach Aian a Elecnic and Cunicain Engineeing depaen a Ea We Univeiy, Dhaka, Bangladeh. She i he aciae ebe f Bangladeh Ce Sciey. He eeach inee i Wiele and Mbile Cunicain. D. Subaa Kua Adiya eceived hi h.d in Elecical Engineeing f Indian Iniue f Technlgy, Khaag, India. He i cuenly wking a a pfe in Depaen f Applied hyic, Elecnic & Cunicain Engineeing, Dhaka Univeiy, Bangladeh. He i a life ebe f Bangladeh Sla Enegy Sciey (BSES) and Bangladeh Elecnic Sciey (BES). Hi aj eeach Inee ae in Inelligen Sye Engineeing, Wiele and Mbile Cunicain and Renewable Enegy Technlgy. 119