PHOTO SCR OPTOCOUPLERS

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1 DESCRIPTION The and AN0 have a gallium-arsenide infrared emitting diode optically coupled with a light activated silicon controlled rectifier in a dual in-line package. FEATURES 0 A, T L compatible, solid state relay 5 W logic indicator lamp driver 00 V symmetrical transistor coupler Underwriters Laboratory (UL) recognized File #E90700 SCHEMATIC APPLICATIONS Low power logic circuits Telecommunications equipment Portable electronics Solid state relays Interfacing coupling systems of different potentials and impedances. ANODE GATE CATHODE 5 ANODE N/C 3 CATHODE Parameter Symbol Device Value Units TOTAL DEVICE *Storage Temperature T STG All -55 to + C *Operating Temperature T OPR All -55 to +00 C *Lead Solder Temperature T SOL All 0 for 0 sec C *Total Device Power Dissipation (-55 C to C) mw P D All Derate above C 9.0 mw/ C EMITTER *Continuous Forward Current I F All 0 ma *Reverse Voltage V R All V *Forward Current - Peak (300 µs, % Duty Cycle) I F (pk) All.0 A *LED Power Dissipation (-55 C to C) 00 mw P D All Derate above C.0 mw/ C DETECTOR 00 V *Off-State And Reverse Voltage 00 V *Peak Reverse Gate Voltage V *Direct On-State Current 300 ma *Surge On-State Current (00 µs) 0 A *Peak Gate Current 0 ma *Detector Power Dissipation (-55 C to C) 00 mw P D All Derate above C 8.0 mw/ C Note * Indicates JEDEC Registered Data ** Typical values at T A = 5 C 00 Corporation DS30038 /7/0 OF 9

2 ELECTRICAL CHARACTERISTICS (T A = 5 C Unless otherwise specified.) INDIVIDUAL COMPONENT CHARACTERISTICS Parameter Test Conditions Symbol Device Min Typ** Max Unit EMITTER Input Forward Voltage I F = 0 ma V F All..5 V Reverse Leakage Current V R = 3 V I R All 0 µa Capacitance V F = 0 V, f =.0 MHz C J All pf DETECTOR 00 Peak Off-State Voltage R GK = 0 kω, T A =00 C V DM 00 V 00 Peak Reverse Voltage T A =00 C V RM 00 V On-State Voltage I T = 300 ma V T All.3 V Off-State Current V DM = 00 V, T A = 00 C, I DM I F = 0 ma, R GK = 0 kω µa Reverse Current V R = 00 V, T A =00 C, I F = 0 ma I R µa Holding Current V Fx = V, R GK = 7 kω I H All.0 ma TRANSFER CHARACTERISTICS (T A = 5 C Unless otherwise specified.) Characteristics Test Conditions Symbol Device Min Typ** Max Units *Input Current to Trigger *Turn-On Time Package Capacitance ISOLATION CHARACTERISTICS V AK = V, R GK = 0 kω 30 I FT ma V AK = 00 V, R GK = 7 kω V AK = V, I F = 30 ma t on ALL µa R GK = 0 kω, RL = 00 Ω f = MHz (input to output) Input to Output Voltage = 0 Coupled dv/dt, input to output (figure 3) C I-O ALL pf dv/dt ALL 0 V/µS Characteristic Test Conditions Symbol Min Typ** Max Units *Input-Output Isolation Voltage ( I I-0 µa, Vrms, t = min.) V ISO 5300 Vac(rms) *Isolation Resistance (V I-O = 0 VDC) R ISO 0! Isolation Capacitance (V I-O =, f = MHz) C ISO 0.8 pf Note * Indicates JEDEC Registered Data ** Typical values at T A = 5 C OF 9 /7/0 DS30038

3 Figure. Input Current To Trigger vs. Anode-Cathode Voltage K 0K 7K 5K R GK = 0K T A = 5 C V AK - ANODE TO CATHODE VOLTAGE (VOLTS) Figure. Input Current To Trigger vs. Temperature K 0K 7K 5K. R GK = 0K T A = 5 C Figure 3. Input Current To Trigger Distribution vs. Temperature TH PERCENTILE R GK = 0K T A = 5 C 0 TH PERCENTILE Figure. Input Current To Trigger vs. Pluse Width 00 0 R GK = 0K T A = 5 C PULSE WIDTH (MICRO SECONDS) K 0K 7K 5K Figure. Input Characteristics I F vs. V F t on - TURN ON TIME (MICROSECONDS) Figure 5. Turn-On Time vs. Input Current R GK = K 0K 5K t on = t d + I r t r µs I F - FORWARD CURRENT (MILLIAMPERES) I F - INPUT CURRENT (MILLIAMPERES) V AK - FORWARD VOLTAGE (VOLTS) DS30038 /7/0 3 OF 9

4 I M - HOLDING CURRENT (MICROAMPERES) Figure 7. Holding Current vs. Temperature 0,000 5, K 0K 7K 5K TRANSIENT THERMAL IMPEDANCE ( C PER WATT) Figure 8. Maximum Transient Thermal Impedance NOTE: () LEAD TEMPERATURE MEASURED AT THE WIDEST PORTION OF THE SCR ANODE LEAD () AMBIENT TEMPERATURE MEASURED AT A POINT /" FROM THE DEVICE JUNCTION TO AMBIENT TIME (SECONDS) JUNCTION TO LEAD I D - NORMALIZED FORWARD CURRENT (OFF STATE) dv/di - CRITICAL RATE OF RISE APPLIED FORWARD VOLTAGE ( Volt/µ sec) Figure 9. Off-State Forward Current vs. Temperature 0, V AK +V T A +5 C 00V V Figure. dv/dt vs. Temperature K 0K 7K 5K Figure 0. On-State Current vs. Maximum Allowable Temperature 00 MAXIMUM ALLOWABLE TEMPERATURE ( C) I T - ON-STATE CURRENT (AMPERES) AMBIENT TEMP HALF-SINE WAVE AVGERAGE AMBIENT TEMP DC CURRENT ON-STATE CURRENT (AMPERES) Figure. On-State Characteristics V T - ON-STATE VOLTAGE (VOLTS) ANODE LEAD TEMP DC CURRENT ANODE LEAD TEMP / SINE WAVE AVERAGE JUNCTION TEMPERATURE = 5 C JUNCTION TEMPERATURE = 00 C INCREASES TO FORWARD BREAKOVER VOLTAGE OF 9 /7/0 DS30038

5 Vp = 800 Volts tp =.00 Seconds f = 5 Hertz TA = 5 C +00 V AC 00 Ω + DUT H Vp.3 Vp - Vp 0 KΩ tp dv / dt EXPONENTIAL RAMP GEN. OSCILLOSCOPE Fig. 3 Coupled dv/dt - Test Circuit ICAL APPLICATIONS 0A, T L COMPATIBLE, SOLID STATE RELAY LOAD Use of the for high sensitivity, 5300 V isolation capability, provides this highly reliable solid state relay design. This design is compatible with 7, 7S and 7H series T L logic systems inputs and 0V AC loads up to 0A. +5V "COIL" 70 Ω 00 Ω SC0 7 Ω 0. µf "CONTACT" 0 V AC 5K IN0 () 7 Ω 5W, LOGIC INDICATOR LAMP DRIVER INDICATER LAMP The high surge capability and non-reactive input characteristics of the allow it to directly couple, without buffers, T L and DTL logic to indicator alarm devices, without danger of introducing noise and logic glitches. +5V LOGIC INPUT 70 Ω 00 Ω 0 V AC 5K 0. µf 00V SYMMETRICAL TRANSISTOR COUPLER Use of the high voltage PNP portion of the provides a 00V transistor capable of conducting positive and negative signals with current transfer ratios of over %. This function is useful in remote instrumentation, high voltage power supplies and test equipment. Care should be taken not to exceed the 0mW power dissipation rating when used at high voltages. INPUT OUTPUT DS30038 /7/0 5 OF 9

6 Package Dimensions (Through Hole) PIN ID. Package Dimensions (Surface Mount) 0.3 (8.89) (8.38) 0.70 (.8) 0.0 (.0) 3 PIN ID (.8) 0.0 (.0) SEATING PLANE (.78) 0.05 (.) 0.00 (5.08) 0.35 (3.3) 0.3 (8.89) (8.38) (.78) 0.05 (.) (7.) 0.5 (3.90) 0.00 (.5) 0.0 (0.5) 0.0 (0.) 0.00 (.5) 0.00 (0.5) MIN 0.0 (0.0) (0.0) 0 to (7.) 0.00 (5.08) 0.5 (.8) 0.0 (0.5) 0.0 (0.) 0.00 (0.5) MIN 0.00 (.5) Lead Coplanarity : 0.00 (0.0) MAX 0.0 (0.0) MIN 0.35 (8.00) MIN 0.05 (0.30) MAX 0.0 (0.) (0.0) Package Dimensions (0. Lead Spacing) Recommended Pad Layout for Surface Mount Leadform 0.70 (.8) 0.0 (.0) (.78) 0.00 (.5) 0.3 (8.89) (8.38) SEATING PLANE 0.00 (5.08) 0.35 (3.3) (.78) 0.05 (.) 0.5 (0.5) 0.95 (7.9) 0.00 (.5) (0.7) 0.5 (3.90) 0.00 (.5) 0.00 (0.0) MIN 0.0 (0.0) (0.0) 0.0 (0.5) 0.0 (0.) 0.00 (.5) 0.00 (0.) 0 to 5 NOTE All dimensions are in inches (millimeters) OF 9 /7/0 DS3038

7 ORDERING INFORMATION Option Order Entry Identifier Description S.S Surface Mount Lead Bend SD.SD Surface Mount; Tape and reel W.W 0. Lead Spacing VDE W.300W VDE 088, 0. Lead Spacing 3S.3S VDE 088, Surface Mount 3SD.3SD VDE 088, Surface Mount, Tape & Reel Carrier Tape Specifications ( D Taping Orientation).85 ± ± ± 0..0 ± 0..0 ± 0. Ø.55 ± ± ± ± 0..0 ± ± MAX 0.30 ± 0.0 Ø. ± 0. User Direction of Feed NOTE All dimensions are millimeters DS30038 /7/0 7 OF 9

8 Americas Customer Response Center 770 Las Colinas Ridge Suite 00 Irving, TX 73 Tel: Fax: China Hong Kong Ltd. Shenzhen Representative Office Room 307, Shun Hing Square Di Wang Commercial Centre 0 Shen Nan Road East Shenzhen, P.R.C Tel: Fax: China Japan Ltd Hong Kong Ltd. Shanghai Representative Office Room 0, Shanghai International Trade Centre No. 00 Yan An (W) Road Shanghai, P.R.C Tel: Fax: Finland Itakatu 3 D 3 FIN Heisinki Finland Tel: Fax: France Centre d' Affairs "Le Parc de Massy" Z.I. De la Bonde bis, Rue Marcel Paul - Bat.B F-97 Massy Cedex France Tel: Fax: Germany GmbH Oskar-von-Miller-Strasse e D-85 Furstenfeldbruck Germany Tel: Fax: Hong Kong Hong Kong Ltd 9/F, CMG Asia Tower The Gateway II, 5 Canton Road Tsimshatsui East, Kowloon Hong Kong Tel: Fax: Italy Srl Via Carducci, Sesto San Giovanni (Ml) Italy Tel: Fax: Japan F Bancho-kaikan - Gobancho, Chiyoda-ku, Tokyo, Japan Tel: Fax: Japan Osaka Office Shin-Osaka Meiko Building 8F -3-, Mlyahara, Yodogawa-ku Osaka, Japan Tel: Fax: Korea Fairchild Korea Semiconductor, Ltd. 8-3, Dodang-Dong, Wonmi-ku, Puchon, Kyunggi-Do, Korea, 0-7 Tel: Fax: Korea Fairchild Korea Semiconductor, Ltd. Suwon Office th Floor Song-i Building, 97-, Youngtong-Dong, Paldal-ku, Suwon, Kyunggi-Do, Korea, -70 Tel: Fax: Korea Fairchild Korea Semiconductor, Ltd. Kumi Office 5th Floor Shinlim Building 7-, Songjung-Dong, Kumi, Kyoungsangbuk-Do, Korea, Tel: Fax: Mexico Av. Vallarta #3 Flr. Col. Cd Granjas Zapopan Jalisco 0 Mexico Tel: Fax: Singapore Asia Pacific Pte. Ltd. 3 Orchard Road #0-0/03 Shaw House Singapore 3888 Tel: Fax: /3 Sweden Industrlvagen 7 SE-7 8 Solna Sweden Tel: Fax: Taiwan Hong Kong Ltd. Taiwan Branch /F. No. 7 Tu Hwa North Road Taipei, Taiwan Tel: Fax: UK Ltd. 0 Interface Business Park Wootton Bassett Swindon SN 8SY United Kingdom Tel: Fax: OF 9 /7/0 DS30038

9 DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in labeling, can be reasonably expected to result in a significant injury of the user.. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. DS30038 /7/0 9 OF 9

PHOTO SCR OPTOCOUPLERS

PHOTO SCR OPTOCOUPLERS PACKAGE SCHEMATIC 6 6 ANODE 6 GATE CATHODE 2 5 ANODE N/C 3 4 CATHODE 6 DESCRIPTION The HC series consists of a gallium-arsenide infrared emitting diode optically coupled with a light activated silicon