T95N02R. Power MOSFET 95 Amps, 24 Volts. N Channel DPAK
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1 NTD95NR Power MOSFET 95 mps, Volts N Channel DPK Features High Power and Current Handling Capability Fast Switching Performance Low R DS(on) to Minimize Conduction Loss Low Gate Charge to Minimize Switching Losses Pb Free Packages are vailable pplications CPU Motherboard Vcore pplications High Frequency DC DC Converters Motor Drives Bridge Circuits MXIMUM RTINGS ( unless otherwise specified) Parameter Symbol Value Unit to Source Voltage V DSS V Gate to Source Voltage V GS ± V Thermal Resistance, Junction to Case Total Power T = 5 C Current T = 5 C, Limited by Package T = 5 C, Limited by Wires Thermal Resistance, Junction to mbient (Note ) Total Power T = 5 C Current T = 5 C Thermal Resistance, Junction to mbient (Note ) Total Power T = 5 C Current T = 5 C R JC P D I D I D R J P D ID R J P D ID Operating Junction and Storage Temperature T J, T STG to 5 Continuous Source Current (Body Diode) I S 5 Single Pulse to Source valanche Energy (V DD = 5 V, V G =, I PK =, L = mh, R G = 5 ) Lead Temperature for Soldering Purposes (/8 in from case for seconds) C/W W C/W W C/W W C E S 8 mj T L 6 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.. Surface mounted on FR board using in sq pad size (Cu area =.7 in sq [ oz] including traces).. Surface mounted on FR board using the minimum recommended pad size (Cu area =. in sq). G V (BR)DSS R DS(ON) TYP I D MX*.5 V V V *I D MX in the product summary table is continuous and steady at 5 C. Y WW T95NR G D S DPK CSE 69 (Surface Mount) STYLE DPK CSE 69D (Straight Lead) STYLE MRKING DIGRMS & PIN SSIGNMENTS Gate Gate YWW T95 NRG YWW T95 NRG = Year = Work Week = Device Code = Pb Free Package Source Source ORDERING INFORMTION See detailed ordering and shipping information in the package dimensions section on page of this data sheet. Semiconductor Components Industries, LLC, 6 July, 6 Rev. Publication Order Number: NTD95NR/D
2 NTD95NR THERML RESISTNCE RTINGS Parameter Symbol Value Unit Junction to Case () R JC.5 C/W Junction to mbient Steady State (Note ) R J 5 Junction to mbient Steady State (Note ) R J. Surface mounted on FR board using in sq pad size (Cu area =.7 in sq [ oz] including traces).. Surface mounted on FR board using the minimum recommended pad size (Cu area =. in sq). ELECTRICL CHRCTERISTICS ( unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit OFF CHRCTERISTICS to Source Breakdown Voltage V (BR)DSS V GS = V, I D = 5 9 V to Source Breakdown Voltage Temperature Coefficient V (BR)DSS /T J 5 mv/ C Zero Gate Voltage Current I DSS V GS = V, V DS = V.5 T J = 5 C Gate to Source Leakage I GSS V DS = V, V GS = ± V ± n ON CHRCTERISTICS (Note 5) Gate Threshold Voltage V GS(TH) V GS = V DS, I D = 5.. V Negative Threshold Temperature Coefficient V GS(TH) /T J 5. mv/ C to Source On Resistance R DS(on) V GS =.5 V, I D = m V GS = V, I D =.5 5. Forward Transconductance gfs V GS = V, I D = S Input Capacitance C ISS Total Gate Charge Q T CHRGES, CPCITNCES ND GTE RESISTNCE pf Output Capacitance C OSS VGS = V, f =. MHz, VDS = V Reverse Transfer Capacitance C RSS 9 nc Q GS VGS =.5 V, VDS = V; ID =. Q GD 9. SWITCHING CHRCTERISTICS Turn on Delay Time t d(on) ns Rise Time t r V GS = V, V DD = V, 8 Turn off Time t d(off) I D =, R G = 6 Fall Time t f 7 DRIN SOURCE DIODE CHRCTERISTICS Forward Diode Voltage V SD V GS = V, I S =.8. V Reverse Recovery Time t RR 5 ns Charge Time T a V GS = V, d ISD /dt = / s, Discharge Time T b I S = Reverse Recovery Charge Q RR 5 nc 5. Pulse Test: Pulse Width s, Duty Cycle %.
3 I D, DRIN CURRENT () NTD95NR TYPICL CHRCTERISTICS V GS = V 8 7. V V DS V 6 5. V. V 8. V 6.6 V. V 8. V 8 6. V 6 T J = C.8 V.6 V. V T J = 55 C I D, DRIN CURRENT () V DS, DRIN TO SOURCE VOLTGE (V) V GS, GTE TO SOURCE VOLTGE (V) Figure. On Region Characteristics Figure. Transfer Characteristics R DS(on), DRIN TO SOURCE RESISTNCE ( ) I D = V GS, GTE TO SOURCE VOLTGE (V) I D, DRIN CURRENT () R DS(on), DRIN TO SOURCE RESISTNCE ( ) V GS =.5 V V GS = V 7 Figure. On Resistance versus Gate to Source Voltage Figure. On Resistance versus Current and Gate Voltage R DS(on), DRIN TO SOURCE RESISTNCE (NORMLIZED) I D = 95 V GS = V T J, JUNCTION TEMPERTURE ( C) I DSS, LEKGE (n) V GS = V T J = 5 C T J = C V DS, DRIN TO SOURCE VOLTGE (V) Figure 5. On Resistance Variation with Temperature Figure 6. to Source Leakage Current versus Voltage
4 NTD95NR TYPICL CHRCTERISTICS C, CPCITNCE (pf) C ISS V DS = V C RSS V GS = V C ISS C OSS C RSS V GS V DS GTE TO SOURCE OR DRIN TO SOURCE VOLTGE (V) V GS, GTE TO SOURCE VOLTGE (V) 6 5 Q GS V DS Q GD Q T I D = 8 6 Q g, TOTL GTE CHRGE (nc) V GS 8 V DS, DRIN TO SOURCE VOLTGE (V) Figure 7. Capacitance Variation Figure 8. Gate to Source and to Source Voltage versus Total Charge t, TIME (ns) V DS = V I D = V GS = V t r t f t d(off) t d(on) R G, GTE RESISTNCE ( ) Figure 9. Resistive Switching Time Variation versus Gate Resistance I S, SOURCE CURRENT () V GS = V V SD, SOURCE TO DRIN VOLTGE (V) Figure. Diode Forward Voltage versus Current ORDERING INFORMTION Device Package Shipping NTD95NR DPK 75 Units / Rail NTD95NRG DPK (Pb Free) 75 Units / Rail NTD95NR DPK 75 Units / Rail NTD95NR G DPK (Pb Free) 75 Units / Rail NTD95NRT DPK 5 Units / Tape & Reel NTD95NRTG DPK (Pb Free) 5 Units / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D.
5 NTD95NR PCKGE DIMENSIONS DPK (SINGLE GUGE) CSE 69 ISSUE V S F B R L H J C T SETING PLNE E U Z NOTES:. DIMENSIONING ND TOLERNCING PER NSI Y.5M, 98.. CONTROLLING DIMENSION: INCH. INCHES MILLIMETERS DIM MIN MX MIN MX B C D E F H J L.9 BSC.9 BSC R S...6. U..5 V Z.55.9 D PL. (.5) M T STYLE : PIN. GTE. DRIN. SOURCE. DRIN SOLDERING FOOTPRINT* SCLE : mm inches *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 5
6 NTD95NR PCKGE DIMENSIONS DPK CSE 69D ISSUE B V B R C E NOTES:. DIMENSIONING ND TOLERNCING PER NSI Y.5M, 98.. CONTROLLING DIMENSION: INCH. S T SETING PLNE F G K D PL J. (.5) M T H Z INCHES MILLIMETERS DIM MIN MX MIN MX B C D E F G.9 BSC.9 BSC H J K R S V Z.55.9 STYLE : PIN. GTE. DRIN. SOURCE. DRIN ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. ll operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/ffirmative ction Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICTION ORDERING INFORMTION LITERTURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 56, Denver, Colorado 87 US Phone: or 8 86 Toll Free US/Canada Fax: or Toll Free US/Canada orderlit@onsemi.com N. merican Technical Support: Toll Free US/Canada Europe, Middle East and frica Technical Support: Phone: 79 9 Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative NTD95NR/D
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