NTMD3P03, NVMD3P03 Power MOSFET Amps, -30 Volts Dual P Channel SOIC 8 Features
|
|
- Verity Singleton
- 6 years ago
- Views:
Transcription
1 NTMDP, NVMDP Power MOSFET -. mps, - Volts Dual PChannel SOIC Features High Efficiency Components in a Dual SOIC Package High Density Power MOSFET with Low R DS(on) Miniature SOIC Surface Mount Package Saves Board Space Diode Exhibits High Speed with Soft Recovery I DSS Specified at Elevated Temperature valanche Energy Specified Mounting Information for the SOIC Package is Provided ECQ Qualified NVMDPRG These Devices are PbFree and are RoHS Compliant pplications DCDC Converters Low Voltage Motor Control Power Management in Portable and BatteryPowered Products, i.e.: Computers, Printers, PCMCI Cards, Cellular & Cordless Telephones MXIMUM RTINGS (T J = C unless otherwise noted) Rating Symbol Value Unit DraintoSource Voltage V DSS V GatetoSource Voltage Continuous V GS ± V Thermal Resistance Junctiontombient (Note ) Total Power T = C Continuous Drain C Continuous Drain 7 C Pulsed Drain Current (Note ) Thermal Resistance Junctiontombient (Note ) Total Power T = C Continuous Drain C Continuous Drain 7 C Pulsed Drain Current (Note ) Thermal Resistance Junctiontombient (Note ) Total Power T = C Continuous Drain C Continuous Drain 7 C Pulsed Drain Current (Note ) Operating and Storage Temperature Range Single Pulse DraintoSource valanche Energy Starting T J = C (V DD = Vdc, V GS =. Vdc, Peak I L = 7. pk, L = mh, R G = ) Maximum Lead Temperature for Soldering Purposes, / from case for seconds R J P D ID I D I DM R J P D ID I D I DM R J P D ID I D I DM T J, T stg to + C/W W C/W W C/W W C E S mj T L C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.. Minimum FR or G PCB, t = Steady State.. Mounted onto a square FR Board ( in sq, oz Cu. thick single sided), t = steady state.. Mounted onto a square FR Board ( in sq, oz Cu. thick single sided), t seconds.. Pulse Test: Pulse Width = s, Duty Cycle = %. G V DSS R DS(ON) Typ I D Max V V. SOIC SUFFIX NB CSE 7 STYLE PChannel D S MRKING DIGRM* ND PIN SSIGNMENT D D D D EDP YWW S G S G EDP= Specific Device Code = ssembly Location Y = Year WW = Work Week = PbFree Package (Note: Microdot may be in either location) *For additional marking information, refer to pplication Note ND/D. ORDERING INFORMTION Device Package Shipping NTMDPRG SOIC / Tape & (PbFree) Reel NVMDPRG SOIC (PbFree) / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD/D Semiconductor Components Industries, LLC, ugust, Rev. Publication Order Number: NTMDPR/D
2 NTMDP, NVMDP ELECTRICL CHRCTERISTICS (T J = C unless otherwise noted) (Note ) Characteristic Symbol Min Typ Max Unit OFF CHRCTERISTICS DraintoSource Breakdown Voltage (V GS = Vdc, I D = dc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (V DS = Vdc, V GS = Vdc, T J = C) (V DS = Vdc, V GS = Vdc, T J = C) (V DS = Vdc, V GS = Vdc, T J = C) GateBody Leakage Current (V GS = Vdc, V DS = Vdc) GateBody Leakage Current (V GS = + Vdc, V DS = Vdc) ON CHRCTERISTICS V (BR)DSS I DSS.. I GSS I GSS Vdc mv/ C dc ndc ndc Gate Threshold Voltage (V DS = V GS, I D = dc) Temperature Coefficient (Negative) Static DraintoSource OnState Resistance (V GS = Vdc, I D =. dc) (V GS =. Vdc, I D =. dc) V GS(th). R DS(on) Forward Transconductance (V DS = Vdc, I D =. dc) g FS. Mhos DYNMIC CHRCTERISTICS Input Capacitance C iss 7 pf Output Capacitance (V DS = Vdc, V GS = Vdc, f =. MHz) C oss 7 Reverse Transfer Capacitance C rss 7 SWITCHING CHRCTERISTICS (Notes and 7) TurnOn Delay Time Rise Time (V DD = Vdc, I D =. dc, t r TurnOff Delay Time V GS = Vdc, R G =. ) t d(off)... Vdc t d(on) ns Fall Time t f TurnOn Delay Time t d(on) ns Rise Time (V DD = Vdc, I D =. dc, t r TurnOff Delay Time V GS =. Vdc, R G =. ) t d(off) Fall Time t f Total Gate Charge (V DS = Vdc, Q tot nc GateSource Charge V GS = Vdc, Q gs. GateDrain Charge I D =. dc) Q gd. BODYDRIN DIODE RTINGS (Note ) Diode Forward OnVoltage (I S =. dc, V GS = V) (I S =. dc, V GS = V, T J = C) Reverse Recovery Time (I S =. dc, V GS = Vdc, di S /dt = / s) V SD.9.7. Vdc t rr ns t a t b Reverse Recovery Stored Charge Q RR. C. Handling precautions to protect against electrostatic discharge is mandatory.. Indicates Pulse Test: Pulse Width = s max, Duty Cycle = %. 7. Switching characteristics are independent of operating junction temperature.
3 NTMDP, NVMDP TYPICL ELECTRICL CHRCTERISTICS I D, DRIN CURRENT (MPS) V GS = V V GS =. V V GS = V V V GS = V GS = V V GS =. V T V GS =. V J = C V GS =. V V GS =. V V V GS = V GS =. V V GS = V V GS =. V I D, DRIN CURRENT (MPS) V DS > = V T J = C T J = C T J = C V DS, DRINTOSOURCE VOLTGE (VOLTS) V GS, GTETOSOURCE VOLTGE (VOLTS) Figure. OnRegion Characteristics Figure. Transfer Characteristics R DS(on), DRINTOSOURCE RESISTNCE ( ) I D =. T J = C 7 R DS(on), DRINTOSOURCE RESISTNCE ( ) I D =. T J = C 7 V GS, GTETOSOURCE VOLTGE (VOLTS) V GS, GTETOSOURCE VOLTGE (VOLTS) R DS(on), DRINTOSOURCE RESISTNCE ( )..... Figure. OnResistance vs. GatetoSource Voltage T J = C V GS =. V V GS = V I D, DRIN CURRENT (MPS) R DS(on), DRINTOSOURCE RESISTNCE (NOR- MLIZED).... Figure. OnResistance vs. GatetoSource Voltage I D =. V GS = V. 7 T J, JUNCTION TEMPERTURE ( C) Figure. OnResistance vs. Drain Current and Gate Voltage Figure. On Resistance Variation with Temperature
4 NTMDP, NVMDP V GS = V V DS = V V GS = V I DSS, LEKGE (n) V GS, GTETOSOURCE VOLTGE (VOLTS) Q V DS, DRINTOSOURCE VOLTGE (VOLTS) Figure 7. DraintoSource Leakage Current vs. Voltage V DS Q T J = C T J = C Q T V GS C, CPCITNCE (pf) I D =. T J = C Q g, TOTL GTE CHRGE (nc) Figure 9. GatetoSource and DraintoSource Voltage vs. Total Charge t, TIME (ns) C oss C rss T J = C V GS V DS GTETOSOURCE OR DRINTOSOURCE VOLTGE (VOLTS) Figure. Capacitance Variation C iss C rss V DS = V I D =. V GS = V t d(off) t f t d(on) C iss R G, GTE RESISTNCE ( ) Figure. Resistive Switching Time Variation vs. Gate Resistance t r t, TIME (ns) V DS = V I D =. V GS =. V t r t f t d(off) t d(on) I S, SOURCE CURRENT (MPS)... V GS = V T J = C..... R G, GTE RESISTNCE ( ) V SD, DRINTOSOURCE VOLTGE (VOLTS) Figure. Resistive Switching Time Variation vs. Gate Resistance Figure. Diode Forward Voltage vs. Current
5 NTMDP, NVMDP I D, DRIN CURRENT (MPS). V GS = V SINGLE PULSE T C = C dc ms. ms. R DS(on) LIMIT THERML LIMIT PCKGE LIMIT.. V DS, DRINTOSOURCE VOLTGE (VOLTS) Figure. Maximum Rated Forward Biased Safe Operating rea di/dt I S t rr t a t b TIME t p. I S I S Figure. Diode Reverse Recovery Waveform R thja(t), EFFECTIVE TRNSIENT THERML RESPONSE.. D = Chip Normalized to R J at Steady State ( pad) Junction F.7 F. F. F. F Single Pulse mbient. E E E E+ E+ E+ E+ t, TIME (s).. F Figure. FET Thermal Response
6 NTMDP, NVMDP PCKGE DIMENSIONS X B Y Z H G D S C. (.) M Z Y S X S. (.) M SETING PLNE Y. (.) M SOIC NB CSE 77 ISSUE K N X M K SOLDERING FOOTPRINT* J.. NOTES:. DIMENSIONING ND TOLERNCING PER NSI Y.M, 9.. CONTROLLING DIMENSION: MILLIMETER.. DIMENSION ND B DO NOT INCLUDE MOLD PROTRUSION.. MXIMUM MOLD PROTRUSION. (.) PER SIDE.. DIMENSION D DOES NOT INCLUDE DMBR PROTRUSION. LLOWBLE DMBR PROTRUSION SHLL BE.7 (.) TOTL IN EXCESS OF THE D DIMENSION T MXIMUM MTERIL CONDITION.. 7 THRU 7 RE OBSOLETE. NEW STNDRD IS 77. MILLIMETERS INCHES DIM MIN MX MIN MX B....7 C D.... G.7 BSC. BSC H.... J K..7.. M N.... S.... STYLE : PIN. SOURCE. GTE. SOURCE. GTE. DRIN. DRIN 7. DRIN. DRIN SCLE : mm inches *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. listing of SCILLC s product/patent coverage may be accessed at SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. ll operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/ffirmative ction Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICTION ORDERING INFORMTION LITERTURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box, Denver, Colorado 7 US Phone: 77 or Toll Free US/Canada Fax: 77 or 7 Toll Free US/Canada orderlit@onsemi.com N. merican Technical Support: 9 Toll Free US/Canada Europe, Middle East and frica Technical Support: Phone: 79 9 Japan Customer Focus Center Phone: 7 ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative NTMDPR/D
NTMD6P02R2SG. Power MOSFET 6 Amps, 20 Volts. P Channel SOIC 8, Dual Features 6 AMPERES, 20 VOLTS
NTMD6P2R2 Preferred Device Power MOSFET 6 mps, 2 Volts PChannel SOIC, Dual Features Ultra Low R DS(on) Higher Efficiency Extending Battery Life Logic Level Gate Drive Miniature Dual SOIC Surface Mount
More informationNTF6P02T3. Power MOSFET -6.0 Amps, -20 Volts. P-Channel SOT AMPERES -20 VOLTS R DS(on) = 44 m (Typ.)
NTFPT Power MOSFET. Amps, Volts PChannel SOT Features Low R DS(on) Logic Level Gate Drive Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified PbFree Package is Available Typical Applications
More informationNTMS5P02R2G. Power MOSFET 5.4 Amps, 20 Volts. P Channel Enhancement Mode Single SOIC 8 Package
NTMS5PR Power MOSFET 5. mps, Volts PChannel EnhancementMode Single SOIC Package Features High Density Power MOSFET with Ultra Low R DS(on) Providing Higher Efficiency Miniature SOIC Surface Mount Package
More informationT95N02R. Power MOSFET 95 Amps, 24 Volts. N Channel DPAK
NTD95NR Power MOSFET 95 mps, Volts N Channel DPK Features High Power and Current Handling Capability Fast Switching Performance Low R DS(on) to Minimize Conduction Loss Low Gate Charge to Minimize Switching
More informationNTF5P03T3. P Channel SOT AMPERES, 30 VOLTS R DS(on) = 100 m
NTF5PT Preferred Device Power MOSFET 5. mps, Volts PChannel SOT Features Ultra Low R DS(on) Higher Efficiency Extending Battery Life Logic Level Gate Drive Miniature SOT Surface Mount Package valanche
More informationNTGS3446. Power MOSFET 20 V, 5.1 A Single N Channel, TSOP6 Features
Power MOSFET V,. Single NChannel, TSOP Features Ultra Low R DS(on) Higher Efficiency Extending Battery Life Logic Level Gate Drive Diode Exhibits High Speed, Soft Recovery valanche Energy Specified SS
More informationNTF3055L175. Power MOSFET 2.0 A, 60 V, Logic Level. N Channel SOT AMPERES, 60 VOLTS R DS(on) = 175 m
NTF355L75 Power MOSFET. A, 6 V, Logic Level NChannel SOT3 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features
More informationNTD30N02T4G. Power MOSFET 30 Amps, 24 Volts. N Channel DPAK. 30 AMPERES 24 VOLTS R DS(on) = 11.2 m (Typ.)
NTDN Power MOSFET Amps, Volts NChannel Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features PbFree Packages are
More informationNTF Power MOSFET 3.0 Amps, 60 Volts. N Channel SOT A, 60 V R DS(on) = 110 m
NTF55 Preferred Device Power MOSFET. Amps, Volts NChannel SOT Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features
More informationNTD14N03R, NVD14N03R. Power MOSFET 14 Amps, 25 Volts. N Channel DPAK. 14 AMPERES, 25 VOLTS R DS(on) = 70.4 m (Typ)
NTDNR, NVDNR Power MOSFET mps, 5 Volts NChannel DPK Features Planar HDe Process for Fast Switching Performance Low R DS(on) to Minimize Conduction Loss Low C iss to Minimize Driver Loss Low Gate Charge
More informationNTQD6866R2G. Power MOSFET 6.9 Amps, 20 Volts N Channel TSSOP 8 Features. 6.9 AMPERES 20 VOLTS 30 V GS = 4.5 V
Power MOSFET.9 Amps, Volts NChannel TSSOP Features New Low Profile TSSOP Package Ultra Low R DS(on) Higher Efficiency Extending Battery Life Logic Level Gate Drive Diode Exhibits High Speed, Soft Recovery
More informationNTJD4105C. Small Signal MOSFET. 20 V / 8.0 V, Complementary, A / A, SC 88
NTJD5C Small Signal MOSFET V / 8. V, Complementary, +.63 A /.775 A, SC 88 Features Complementary N and P Channel Device Leading 8. V Trench for Low R DS(on) Performance ESD Protected Gate ESD Rating: Class
More informationNDF08N50Z, NDP08N50Z. N-Channel Power MOSFET. Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb Free and are RoHS Compliant
N-Channel Power MOSFET 500 V, 0.69 Features Low ON Resistance Low Gate Charge 0% Avalanche Tested These Devices are Pb Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (T C = 25 C unless otherwise
More informationNTB45N06L, NTBV45N06L. Power MOSFET 45 Amps, 60 Volts. Logic Level, N Channel D 2 PAK. 45 AMPERES, 60 VOLTS R DS(on) = 28 m
Power MOSFET 5 Amps, 6 Volts Logic Level, NChannel D PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features
More informationMMBF4391LT1, MMBF4392LT1, MMBF4393LT1. JFET Switching Transistors. N Channel. Pb Free Packages are Available.
LT1, LT1, LT1 JFET Switching Transistors NChannel Features PbFree Packages are Available MAXIMUM RATINGS Rating Symbol Value Unit DrainSource Voltage V DS Vdc DrainGate Voltage V DG Vdc GateSource Voltage
More informationNTP45N06L, NTB45N06L. Power MOSFET 45 Amps, 60 Volts. Logic Level, N Channel TO 220 and D 2 PAK. 45 AMPERES, 60 VOLTS R DS(on) = 28 m
NTP5N6L, NTB5N6L Power MOSFET 5 Amps, 6 Volts Logic Level, NChannel TO and D PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge
More informationNTMFD4C85N. PowerPhase, Dual N-Channel SO8FL. 30 V, High Side 25 A / Low Side 49 A
NTMFDCN PowerPhase, Dual N-Channel SOFL V, High Side A / Low Side 9 A Features Co Packaged Power Stage Solution to Minimize Board Space Minimized Parasitic Inductances Optimized Devices to Reduce Power
More informationNTB25P06, NVB25P06. Power MOSFET. 60 V, 27.5 A, P Channel D 2 PAK
NTB25P6, NB25P6 Power OSFET 6, 27.5 A, PChannel D 2 PAK Designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes. Features AEC Q Qualified
More informationNTMFS4833NT3G. Power MOSFET. 30 V, 191 A, Single N-Channel, SO-8 FL Features
Power MOSFET 3 V, 191 A, Single N-Channel, SO-8 FL Features Low R S(on) to Minimize Conduction Losses Low Capacitance to Minimize river Losses Optimized Gate Charge to Minimize Switching Losses These are
More informationNTD32N06L. Power MOSFET 32 Amps, 60 Volts. Logic Level, N-Channel DPAK
NTDN6L Power MOSFET Amps, 6 Volts Logic Level, NChannel Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features
More informationBSS84 P-Channel Enhancement Mode Field-Effect Transistor
BSS8 P-Channel Enhancement Mode Field-Effect Transistor Features -. A, - V, R DS(ON) = Ω at V GS = - V Voltage-Controlled P-Channel Small-Signal Switch High-Density Cell Design for Low R DS(ON) High Saturation
More informationMMBFJ309L, MMBFJ310L, SMMBFJ309L, SMMBFJ310L. JFET - VHF/UHF Amplifier Transistor. N Channel
MMBFJ9L, MMBFJL, SMMBFJ9L, SMMBFJL JFET - VHF/UHF Amplifier Transistor NChannel Features Drain and Source are Interchangeable S Prefix for Automotive and Other Applications Requiring Unique Site and Control
More informationNTMFS4935N. Power MOSFET 30 V, 93 A, Single N Channel, SO 8 FL Features
Power MOSFET 3 V, 93, Single N Channel, SO 8 FL Features Low R S(on) to Minimize Conduction Losses Low Capacitance to Minimize river Losses Optimized Gate Charge to Minimize Switching Losses These evices
More informationBAS19LT1G, BAS20LT1G, BAS21LT1G, BAS21DW5T1G. High Voltage Switching Diode HIGH VOLTAGE SWITCHING DIODE
BAS9LTG, BAS20LTG, BAS2LTG, BAS2DWTG High Voltage Switching Diode Features These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Continuous Reverse Voltage Rating Symbol
More informationNGTB40N60FLWG IGBT. 40 A, 600 V V CEsat = 1.85 V
NGTB4N6FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering
More informationMTD6N15T4G. Power Field Effect Transistor DPAK for Surface Mount. N Channel Enhancement Mode Silicon Gate
Power Field Effect Transistor DPAK for Surface Mount NChannel EnhancementMode Silicon Gate This Power FET is designed for high speed, low loss power switching applications such as switching regulators,
More informationNGTG50N60FLWG IGBT. 50 A, 600 V V CEsat = 1.65 V
NGTGN6FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both
More informationFeatures. T A =25 o C unless otherwise noted
NDS65 NDS65 P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode field effect transistors are produced using ON Semiconductor s proprietary, high cell
More informationNTSB40200CTG, NTSJ40200CTG. Very Low Forward Voltage Trench-based Schottky Rectifier. Exceptionally Low V F = 0.53 V at I F = 5 A
NTSBCTG, NTSJCTG Very Low Forward Voltage Trench-based Schottky Rectifier Exceptionally Low V F =.3 V at I F = Features Fine Lithography Trenchbased Schottky Technology for Very Low Forward Voltage and
More information2N7002DW N-Channel Enhancement Mode Field Effect Transistor
2N7002DW N-Channel Enhancement Mode Field Effect Transistor Features Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage
More informationNGTB30N65IHL2WG IGBT. 30 A, 650 V V CEsat = 1.6 V E off = 0.2 mj
NGTB3N65IHL2WG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications,
More informationNGTB30N120LWG IGBT. 30 A, 1200 V V CEsat = 1.75 V E off = 1.0 mj
NGTBNLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications.
More informationNGTB25N120LWG IGBT. 25 A, 1200 V V CEsat = 1.85 V E off = 0.8 mj
NGTBNLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications.
More informationNLSV2T Bit Dual-Supply Non-Inverting Level Translator
2-Bit Dual-Supply Non-Inverting Level Translator The NLSV2T2 is a 2 bit configurable dual supply voltage level translator. The input n and output B n ports are designed to track two different power supply
More informationNL17SZ16. Single Input Buffer
NL7SZ6 Single Input Buffer The NL7SZ6 is a single input Buffer in two tiny footprint packages. The device performs much as LCX multi gate products in speed and drive. Features Tiny SOT 33 and SOT 3 Packages
More informationFeatures. Low gate charge. Symbol Parameter Q1 Q2 Units. Pulsed 8 8 Power Dissipation for Single Operation (Note 1a) (Note 1b) 0.
FDCC FDCC V N & P-Channel PowerTrench MOSFETs General Description Features These N & P-Channel MOSFETs are produced using ON Semiconductor s advanced PowerTrench process that has been especially tailored
More informationNTB60N06, NVB60N06. Power MOSFET. 60 V, 60 A, N Channel D 2 PAK. 60 VOLTS, 60 AMPERES R DS(on) = 14 m
NTB6N6, NVB6N6 Power MOSFET 6 V, 6 A, NChannel D PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features AECQ11
More informationNTMFS4926NT3G. Power MOSFET 30 V, 44 A, Single N Channel, SO 8 FL
NTMFS9N Power MOSFET V, A, Single N Channel, SO 8 FL Features Low R S(on) to Minimize Conduction Losses Low Capacitance to Minimize river Losses Optimized Gate Charge to Minimize Switching Losses Optimized
More informationV N (8) V N (7) V N (6) GND (5)
4-Channel Low Capacitance Dual-Voltage ESD Protection Array Features Three Channels of Low Voltage ESD Protection One Channel of High Voltage ESD Protection Provides ESD Protection to IEC61000 4 2 Level
More informationMBRS140T3G SBRS8140T3G. Surface Mount Schottky Power Rectifier SCHOTTKY BARRIER RECTIFIER 1.0 AMPERE, 40 VOLTS
MBRSTG, SBRS8TG Surface Mount Schottky Power Rectifier Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry
More informationMMBT5550L, MMBT5551L, SMMBT5551L. High Voltage Transistors. NPN Silicon
MMBT55L, MMBT555L, SMMBT555L High Voltage Transistors NPN Silicon Features AECQ Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements
More informationNGTB20N120IHRWG. 20 A, 1200 V V CEsat = 2.10 V E off = 0.45 mj
NGTB2N2IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, provides and superior performance
More informationNGTB40N135IHRWG. 40 A, 1350 V V CEsat = 2.40 V E off = 1.30 mj
NGTB4N3IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance
More informationonlinecomponents.com
MMBZ5xxBLT Series, SZMMBZ5xxBLTG Series Zener Voltage Regulators 5 mw SOT Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT package. These devices are designed
More informationNGTB40N120FL2WG. IGBT - Field Stop II. 40 A, 1200 V V CEsat = 2.0 V E off = 1.10 mj
NGTBNFLWG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching
More informationMJW18020G. NPN Silicon Power Transistors High Voltage Planar 30 AMPERES 1000 VOLTS BV CES 450 VOLTS BV CEO, 250 WATTS
NPN Silicon Power Transistors High Voltage Planar The MJW18020 planar High Voltage Power Transistor is specifically Designed for motor control applications, high power supplies and UPS s for which the
More informationNGTG25N120FL2WG. IGBT - Field Stop II. 25 A, 1200 V V CEsat = 2.0 V E off = 0.60 mj
NGTGNFLWG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching
More informationNL17SZ17. Single Non-Inverting Buffer with Schmitt Trigger
NL7SZ7 Single Non-Inverting Buffer with Schmitt Trigger The NL7SZ7 is a single Non inverting Schmitt Trigger Buffer in two tiny footprint packages. The device performs much as LCX multi gate products in
More informationBC847BPDXV6T5G. SBC847BPDXV6 NPN/PNP Dual General Purpose Transistor
BC847BPDX6, SBC847BPDX6 NPN/PNP Dual General Purpose Transistor This transistor is designed for general purpose amplifier applications. It is housed in the SOT563 which is designed for low power surface
More information2N5655G, 2N5657G. Plastic NPN Silicon High-Voltage Power Transistors 0.5 AMPERE POWER TRANSISTORS NPN SILICON VOLTS, 20 WATTS
, Plastic NPN Silicon High-Voltage Power Transistors These devices are designed for use in lineoperated equipment such as audio output amplifiers; lowcurrent, highvoltage converters; and AC line relays.
More informationNL17SG07. Buffer with Open Drain. Output Y
NL7SG07 Buffer with Open Drain Output The NL7SG07 MiniGate is an advanced high speed CMOS Buffer with Open Drain Output in ultra small footprint. The NL7SG07 input structures provides protection when voltages
More informationMMBZ5221BLT1 Series. Zener Voltage Regulators. 225 mw SOT 23 Surface Mount
MMBZ5BLT Series Zener Voltage Regulators 5 mw SOT Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT package. These devices are designed to provide voltage
More informationMMBZ5221BLT1 Series. Zener Voltage Regulators. 225 mw SOT 23 Surface Mount
MMBZ5BLT Series Preferred Device Zener Voltage Regulators 5 mw SOT Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT package. These devices are designed
More information2N5401. PNP Silicon. These are Pb Free Devices* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM
Preferred Device Amplifier Transistors PNP Silicon Features These are PbFree Devices* MAXIMUM RATINGS Rating Symbol alue Unit Collector Emitter oltage CEO 1 Collector Base oltage CBO 16 Emitter Base oltage
More informationNCV8402D, NCV8402AD. Dual Self-Protected Low-Side Driver with Temperature and Current Limit
Dual Self-Protected Low-Side Driver with Temperature and Current Limit NCVD/AD is a dual protected Low Side Smart Discrete device. The protection features include overcurrent, overtemperature, ESD and
More information2N4123, 2N4124. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS
N413, General Purpose Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS CollectorEmitter Voltage CollectorBase Voltage Rating Symbol Value Unit N413 N413 V CEO 5 V CBO 4 EmitterBase
More informationPZT2222A. NPN Silicon Planar Epitaxial Transistor SOT 223 PACKAGE NPN SILICON TRANSISTOR SURFACE MOUNT
NPN Silicon Planar Epitaxial Transistor This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT223 package which is designed for
More informationMUR3020PTG SUR83020PTG MUR3040PTG MUR3060PTG SUR83060PTG. SWITCHMODE Power Rectifiers ULTRAFAST RECTIFIERS 30 AMPERES, VOLTS
MUR00PTG, SUR00PTG, MUR00PTG, MUR00PTG, SUR00PTG SWITCHMODE Power Rectifiers These state of the art devices are designed for use in switching power supplies, inverters and as free wheeling diodes. Features
More informationFFSB1265A. Silicon Carbide Schottky Diode 650 V, 12 A
FFSB165 Silicon Carbide Schottky Diode 65 V, 1 Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared
More informationNTMFS4119NT3G. Power MOSFET. 30 V, 30 A, Single N Channel, SO 8 Flat Lead
Power MOFET V,, ingle N Channel, O 8 Flat Lead Features Low R (on) Fast witching Times Low Inductance O 8 Package These are Pb Free evices V (BR) R (on) Typ I Max (Note ) pplications Notebooks, raphics
More information1PMT5920B Series. 3.2 Watt Plastic Surface Mount POWERMITE Package PLASTIC SURFACE MOUNT 3.2 WATT ZENER DIODES VOLTS
PMT90B Series. Watt Plastic Surface Mount POWERMITE Package This complete new line of. Watt Zener Diodes are offered in highly efficient micro miniature, space saving surface mount with its unique heat
More informationBAT54XV2 Schottky Barrier Diode
June 2015 BAT54XV2 Schottky Barrier Diode Features Low Forward Voltage Drop Flat Lead, Surface Mount Device at 0.60mm Height Extremely Small Outline Plastic Package SOD523F Moisture Level Sensitivity 1
More informationBC337, BC337-25, BC Amplifier Transistors. NPN Silicon. These are Pb Free Devices. Features MAXIMUM RATINGS
BC337, BC337-25, BC337-4 Amplifier Transistors NPN Silicon Features These are PbFree Devices COLLECTOR MAXIMUM RATINGS Rating Symbol alue Unit 2 BASE Collector Emitter oltage CEO 45 dc Collector Base oltage
More informationNGTB40N120FL2WG. IGBT - Field Stop II. 40 A, 1200 V V CEsat = 2.0 V E off = 1.10 mj
NGTBNFLWG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching
More informationElerical Characteristics T C = 5 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BS Drain-Source Break
FQD3P50TM-F085 500V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor s proprietary, planar stripe, DMOS technology.
More informationFFSB2065B-F085. Silicon Carbide Schottky Diode 650 V, 20 A
FFSB265B-F85 Silicon Carbide Schottky Diode 65 V, 2 Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability
More informationNLSV2T Bit Dual-Supply Inverting Level Translator
2-Bit Dual-Supply Inverting Level Translator The NLSV2T240 is a 2 bit configurable dual supply voltage level translator. The input A n and output B n ports are designed to track two different power supply
More informationNGTB15N60S1EG. IGBT - Short-Circuit Rated. 15 A, 650 V V CEsat = 1.5 V
NGTBN6SEG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective NonPunch Through (NPT) Trench construction, and provides superior performance in
More informationNUD3160, SZNUD3160. Industrial Inductive Load Driver
Industrial Inductive Load Driver This microintegrated part provides a single component solution to switch inductive loads such as relays, solenoids, and small DC motors without the need of a freewheeling
More informationBC846, BC847, BC848 Series. General Purpose Transistors. NPN Silicon
BC846, BC847, BC848 Series General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC7/SOT2 which is designed for low power
More informationI D Max T A = 25 C (Notes 3 & 5) -6.8A -5.8A. Top View
Product Line of 2 COMPLEMENTRY PIR ENHNCEMENT MODE MOSFET Product Summary Device (BR)DSS R DS(on) max Q1 2 Q2-2 I D Max T = 2 C (Notes 3 & ) 2mΩ @ = 4. 8. 28mΩ @ = 2. 7.2 33mΩ @ = -4. 4mΩ @ = -2. Description
More informationNL17SV16. Ultra-Low Voltage Buffer
N7S6 Ultra-ow oltage Buffer The N7S6X5T is an ultra high performance single Buffer fabricated in sub micron silicon gate 0.35 m technology with excellent performance down to 0.9. This device is ideal for
More information2N4921, 2N4922, 2N4923. Medium Power Plastic NPN Silicon Transistors 1.0 AMPERE GENERAL PURPOSE POWER TRANSISTORS VOLTS, 30 WATTS
2N4923 is a Preferred Device MediumPower Plastic NPN Silicon Transistors These highperformance plastic devices are designed for driver circuits, switching, and amplifier applications. Features Low Saturation
More informationMUR405, MUR410, MUR415, MUR420, MUR440, MUR460
4, 4, 41, 42, 44, 46 42 and 46 are Preferred Devices SWITCHMODE Power Rectifiers These state of the art devices are a series designed for use in switching power supplies, inverters and as free wheeling
More informationP2N2907ARL1G. Amplifier Transistor. PNP Silicon. These are Pb -Free Devices* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS
Amplifier Transistor PNP Silicon Features These are Pb -Free Devices* MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage V CEO 6 CollectorBase Voltage V CBO 6 EmitterBase Voltage V EBO Collector
More informationMC14557B. 1-to-64 Bit Variable Length Shift Register
MC -to- it Variable Length Shift Register The MC is a static clocked serial shift register whose length may be programmed to be any number of bits between and. The number of bits selected is equal to the
More informationNSVJ6904DSB6. Advance Information N-Channel JFET 25 V, 20 to 40 ma, 40 ms, Dual
NSVJ694DSB6 Advance Information N-Channel JFET V, to 4 ma, 4 ms, Dual The NSVJ694DSB6 is a composite type of JFET designed for compact size and high efficiency which can achieve high gain performance.
More informationBC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series, NSVBC847BDW1T2G, BC848CDW1T1G
BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series, NSBC847BDW1T2G, BC848CDW1T1G Dual General Purpose Transistors NPN Duals SOT363 CASE 419B STYLE 1 These transistors are designed for general
More informationBC487, BC487B. High Current Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM
High Current Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR 1 MAXIMUM RATINGS Rating Symbol alue Unit Collector Emitter oltage CEO 60 dc Collector Base oltage CBO 60 dc Emitter
More informationNCV8450, NCV8450A. Self-Protected High Side Driver with Temperature and Current Limit
NCV85, NCV85A Self-Protected High Side Driver with Temperature and Current Limit The NCV85/A is a fully protected High Side Smart Discrete device with a typical R DS(on) of. and an internal current limit
More information2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor
N7000 / N700 / NS700A N-Channel Enhancement Mode Field Effect Transistor Features High ensity Cell esign for Low R S(ON) Voltage Controlled Small Signal Switch Rugged and Reliable High Saturation Current
More informationFGH40T120SQDNL4. IGBT - Ultra Field Stop. 40 A, 1200 V V CEsat = 1.7 V E off = 1.1 mj
FGHTSQDNL IGBT - Ultra Field Stop This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding
More information2N3903, 2N3904. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS. THERMAL CHARACTERISTICS (Note 1)
N393, N393 is a Preferred Device General Purpose Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Vdc Collector
More informationFDC3535. P-Channel Power Trench MOSFET -80 V, -2.1 A, 183 mω. FDC3535 P-Channel Power Trench MOSFET
FC55 P-Channel Power Trench MOSFET -8 V, -. A, 8 mω Features Max r S(on) = 8 mω at V S = - V, I = -. A Max r S(on) = mω at V S = -.5 V, I = -.9 A High performance trench technology for extremely low r
More informationNB3L553/D. 2.5 V / 3.3 V / 5.0 V 1:4 Clock Fanout Buffer
2.5 V / 3.3 V / 5.0 V :4 Clock Fanout Buffer Description The is a low skew to 4 clock fanout buffer, designed for clock distribution in mind. The specifically guarantees low output to output skew. Optimal
More information2N4403. PNP Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM
N443 Preferred Device General Purpose Transistors PNP Silicon Features PbFree Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit BASE Collector Emitter Voltage V CEO 4 Vdc Collector
More informationN-Channel 30-V (D-S) MOSFET
N-Channel 3-V (D-S) MOSFET DTK43 PRODUCT SUMMRY V DS (V) R DS(on) ( ) I D () a, e Q g (Typ).38 at V GS = V 98 3 82 nc.44 at V GS = 4.5 V 98 FETURES TrenchFET Power MOSFET % R g and UIS Tested Compliant
More information2N4401. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM
Preferred Device General Purpose Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Vdc Collector Base
More informationMMBT3906L, SMMBT3906L. General Purpose Transistor. PNP Silicon
General Purpose Transistor PNP Silicon Features S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ Qualified and PPAP Capable These Devices are PbFree,
More informationFDG6322C Dual N & P Channel Digital FET
FG6C ual N & P Channel igital FET General escription These dual N & P-Channel logic level enhancement mode field effect transistors are produced using ON Semiconductor's proprietary, high cell density,
More informationSN74LS157MEL. Quad 2 Input Multiplexer LOW POWER SCHOTTKY
Quad 2 Input Multiplexer The LSTTL/ MSI is a high speed Quad 2-Input Multiplexer. Four bits of data from two sources can be selected using the common Select and Enable inputs. The four buffered outputs
More informationNLSV22T244. Dual 2-Bit Dual-Supply Non-Inverting Level Translator
Dual 2-Bit Dual-Supply Non-Inverting Level Translator The NLSV22T244 is a dual 2 bit configurable dual supply bus buffer level translator. The input ports A and the output ports B are designed to track
More informationFeatures. Bottom Drain Contact G1 S1 S1 U-DFN D1 D1/D2. Bottom View G2 S2 S2 Top View Pin Configuration
DMN216LHB DUL N-CHNNEL ENHNCEMENT MODE MOSFET DVNCE INFORMTION Product Summary V (BR)DSS 2V Description R DS(on)max I D T = +25 C 15.5mΩ @ V = 4.5V 7.5 16.5mΩ @ V = 4.V 7.3 19mΩ @ V = 3.1V 6.9 2mΩ @ V
More informationMMBD1201 / MMBD1202 / MMBD1203 / MMBD1204 / MMBD1205 Small Signal Diodes
MMBD0 / MMBD0 / MMBD0 / MMBD04 / MMBD05 Small Signal Diodes Ordering Information SOT- Part Number Top Mark Package Packing Method MMBD0 4 SOT- L Tape and Reel MMBD0 5 SOT- L Tape and Reel MMBD0 6 SOT-
More information74HC of 8 Decoder/ Demultiplexer. High Performance Silicon Gate CMOS
of 8 Decoder/ Demultiplexer High Performance Silicon Gate CMOS The 74HC38 is identical in pinout to the LS38. The device inputs are compatible with standard CMOS outputs; with pullup resistors, they are
More informationFeatures. Symbol Parameter N-Channel P-Channel Units. Drain-Source Voltage, Power Supply Voltage V V GSS. Gate-Source Voltage, 8-8 V I D
FC6C ual N & P Channel, igital FET General escription These dual N & P Channel logic level enhancement mode field effect transistors are produced using ON Semiconductor's proprietary, high cell density,
More informationNE522 High Speed Dual Differential Comparator/Sense Amp
HighSpeed DualDifferential Comparator/Sense Amp Features 5 ns Maximum Guaranteed Propagation Delay 0 A Maximum Input Bias Current TTL-Compatible Strobes and Outputs Large Common-Mode Input oltage Range
More informationNTD4965N. Power MOSFET. 30 V, 68 A, Single N Channel, DPAK/IPAK
NTD96N Power MOSFET V, 68, Single N hannel, DPK/IPK Features Low R DS(on) to Minimize onduction Losses Low apacitance to Minimize Driver Losses Optimized Gate harge to Minimize Switching Losses Three Package
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
More informationMBRB4030G, NRVBB4030T4G
BRB3G, NRVBB3TG Preferred Device SWITCHODE Power Rectifier These state of the art devices use the Schottky Barrier principle with a proprietary barrier metal. Features Guardring for Stress Protection aximum
More information