N-Channel and P-Channel 20 V (D-S) MOSFET

Transcription

1 N-Channel and (D-) MOFET DECRIPTION The attached PICE model describes the typical electrical characteristics of the n-channel and p-channel vertical DMO. The subcircuit model is extracted and optimized over the - 55 C to + 15 C temperature ranges under the pulsed to 5 gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage. A novel gate-to-drain feedback capacitance network is used to model the gate charge characteristics while avoiding convergence difficulties of the switched C gd model. All model parameter values are optimized to provide a best fit to the measured electrical data and are not intended as an exact physical interpretation of the device. CHARACTERITIC N- and ertical DMO Macro Model (ubcircuit Model) Level 3 MO Apply for both Linear and witching Application Accurate over the - 55 C to + 15 C Temperature Range Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics UBCIRCUIT MODEL CHEMATIC N-Channel D D C GD C GD G R G Gy + ETC Gx M C G M 1 R1 3 DBD G R G Gy + ETC Gx M C G M 1 R1 3 DBD This document is intended as a PICE modeling guideline and does not constitute a commercial product datasheet. Designers should refer to the appropriate datasheet of the same number for guaranteed specification limits. Document Number: Rev. A, -May-9 1

2 PECIFICATION, unless otherwise noted PARAMETER YMBOL TET CONDITION IMULATED DATA MEAURED DATA tatic D = G, I D = 5 µa N-Ch 1. - Gate-ource Threshold oltage G(th) D = G, I D = - 5 µa P-Ch 1 - s a. Pulse test; pulse width 3 µs, duty cycle %. b. Guaranteed by design, not subject to production testing. G =.5, I D = 5.7 A N-Ch.1.1 Drain-ource On-tate Resistance a G = -.5, I D = A P-Ch.. R D(on), I D =. A N-Ch..9 G = -.5, I D = -. A P-Ch.37.3 Forward Transconductance a D =, I D = 5.7 A N-Ch 17 g fs D = -, I D = A P-Ch 1 I Diode Forward oltage a =.5 A, G = N-Ch.1. D I = -.1 A, G = P-Ch.1 -. Dynamic b Input Capacitance C iss N-Channel D =, G =, f = 1 MHz Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-ource Charge Gate-Drain Charge Q g Q gs Q gd D = -, G =, f = 1 MHz N-Ch 3 5 P-Ch N-Ch P-Ch N-Ch 9 7 P-Ch 5 5 D =, G =, I D = 5.7 A N-Ch D = -, G = -, I D = A P-Ch 1 3 N-Channel D =, G =.5, I D = 5.7 A D = -, G = -.5, I D = A N-Ch.7 P-Ch 17 N-Ch P-Ch 3 3 N-Ch.9.9 P-Ch UNIT Ω pf nc Document Number: Rev. A, -May-9

3 COMPARION OF MODEL WITH MEAURED DATA, unless otherwise noted N-Channel MOFET 3 G = 5,, 3.5, 3 T J = 15 C 5 15 G = T J = - 55 C R D(on) - On-Resistance (Ω)... G =.5 Capacitance (pf) C iss I D = 5. A D = D = 1 I - ource Current (A) T J = 15 C Q g - Total Gate Charge (nc) Dots and squares represent measured data D - ource-to-drain oltage () Document Number: Rev. A, -May-9 3

4 COMPARION OF MODEL WITH MEAURED DATA, unless otherwise noted MOFET 3 G = 5,, 3.5, 3 T J = 15 C G = T J = - 55 C C iss. 1 R D(on) - On-Resistance (Ω).. G =.5 Capacitance (pf) I D = 5.1 A D = D = 1 I - ource Current (A) T J = 15 C Q g - Total Gate Charge (nc) D - ource-to-drain oltage () Dots and squares represent measured data. Document Number: Rev. A, -May-9

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