d b c d a c a a a c d b

Size: px
Start display at page:

Download "d b c d a c a a a c d b"

Transcription

1 Beha Uverty Faculty of Egeerg Shoubra Electrcal Egeerg eartmet Frt Year commucato. t emeter Eam ate: 3 0 ECE: Electroc Egeerg fudametal urato : 3 hour K=.38 3 J/K h= J. q=.6 9 C m o =9. 3 Kg [S] =.5 cm 3 [S] m e =.8 m o [S] m h =0.8 m o [S] E g =. e [S] μ =400 cm /. [S] μ = 400 cm /. ε o = F/cm ε r =.7 Eg =. e Soluto Queto ( mark) wer th queto the form of table. Chooe the correct awer (oly oe awer acceted). For trc emcoductor.. (a) ll bod are comlete at 0 K (b) Part of valace electro releaed at hgh T (c) There are ome murte added (d) Both (a) ad (b) The collo due to. May chage both magtude ad drecto of the carrer eed (a) Iozed murte (b) Lattce vbrato (c) Thermal moto (d) rft of artcle 3 the tme betwee collo creaed, the moblty. (a) Rema cotat (b) ecreaed (c) creaed (d) affected oly by the murte cocetrato 4 the dog cocetrato creae above 5, the moblty. (a) Rema cotat (b) affected oly by the murte cocetrato (c) creaed (d) ecreaed 5 Fck low ca decrbe. (a) ffuo heomea (b) rft heomea (c) Both drft ad dffuo (d) No of the above 6 For the fabrcato of Ga jucto. The mot commo method. (a) ffuo (b) Evaorato (c) Etay (d) Io mlatato 7 The learly graded jucto are uually made by (a) ffuo (b) Evaorato (c) Etay (d) Io mlatato 8 The jucto deleto wdth vare a 3 (a) (b) (c) (d) 9 the revere ba voltage creae, the deleto caactace. (a) ecreae (b) Icreae (c) become zero (d) Rema cotat For the actve mode of oerato of bolar jucto trator. The EBJ/CBJ mut be coected a (a) Forward/Forward (b) Revere/Revere (c) Forward/Revere (d) Revere/forward For a bolar jucto trator (BJT), the bae rego (a) Moderately doed (b) ery th (c) Lghtly doed (d) Both(b) ad(c) Mot of the electro the bae of a trator flow (a) Out of the bae lead (b) Ito the collector (c) Ito the emtter (d) Ito the bae uly d b c d a c a a a c d b Page of 9

2 Queto (0 mark) a I a emcoductor, the Ferm level 50 me below the coducto bad. What the robablty of fdg a electro a tate KT below the valace bad edge E at room temerature? b bar of lco 0. mm log ad ha acro ecto of mm. Oe volt mreed acro the bar reult a curret of 8 m. umg that the curret due to electro, calculate:. Cocetrato of free electro ad. The drft velocty. c The dog roce of a S chage t coductvty. There alway a certa ecfc dog level that caue the coductvty to be a mmum. tye emcoductor doed wth that ecfc level. Calculate the mmum value of the coductvty. (T=300 K) (a) Soluto F( E) e EE F KT E E E E KT E F F E E g E e F e F( E) e (b) R 5 3 I 8 L R 6 R m.5cm 3 L q cm vd E cm / ec 700 m / Page of 9

3 (c) q q e h qe qh d t mmum coductvty 0 d d d qh qe d 0 d qe q h e h e h cm cm m m m cm Page 3 of 9

4 Queto 3 (0 mark) a Ela the deedece of moblty o temerature. (ot more tha 6 le) e KT b Prove that: q e c bar of lco of legth cm llumated at oe ed creatg Δ= Δ = cm 3 ece electro ad hole. If the dffuo legth L for the morty hole 4 3 cm ad f all the ece electro ad hole recombe at the other ed of the bar. Calculate ad lot the teady tate ece morty hole dtrbuto Δ() a fucto of the dtace alog the bar. (Ht Ue the aromato, e =+, for <<.) Soluto (a) t hgh temerature (T>50 K) the moblty maly lmted by the lattce vbrato. μ decreae wth creae of T (μ α T 3/ ). t low temerature (T<50 K) the moblty maly lmted by the ozed murte. μ creae wth creae of T (μ α T 3/ ). (b) EF E e kt de E qd d J qμe q 0 d EF E de q EF E def de qμe e kt q d kt kt d d de F 0 d The q μ kt kt μ q T Page 4 of 9

5 (c) Cotuty equato (o lght/teady tate) Note (the lght aborbed very mall rego.e at =0 ad creatg a ece of morty carrer of cm 3 but the em coductor doe ot eoe to lght 0 L Th equato ha a oluto a: L ( ) Ce C e L Note L = cm ad L = 4 3 cm ce L L L e whe The ( ) C ( ) C ( ) L L or C C ()=(C C ) ( ) L ** t = 0 = o = e C +C = I ** t =L =0 e (C +C ) 0.(C C )=0 II By olvg (I) ad (II) C =5.5 C = 4.5 cm -3 3 =0 X= = cm ( ).5 5 Thu for /L << the dtrbuto become lear ot eoetal a how Page 5 of 9

6 Queto 4 (8 mark) a For the how abrut jucto drve a ereo for the electrc feld the rego < <. b efe: the barrer otetal ad the derve the ereo for the barrer otetal (bult otetal) term of the dog cocetrato c abrut lco jucto at zero ba ha doat cocetrato of N = 7 cm 3 ad N = 5 5 cm 3. T = 300 K.. Calculate the Ferm level o each de of the jucto wth reect to the trc Ferm level.. Calculate the bult otetal.. eterme the eak electrc feld for th jucto. (a) ψ() d E ( ) ρ ( ) d d ε d ψ Soluto E 0 de() d E() E() E 0 de() d E() E E E() E ma E(0) (b) Barrer otetal: whe the tye materal ut cotact wth the tye materal, free electro from tye dffue ad cro the jucto ad combe wth hole the tye materal leavg behd (+ve o) the urface of the tye. Whle ( ve o) o the tye reg. Thee otve ad egatve o createe a electrc feld whch tur roduce a electrcc otetal (barrer otetal) that revet more electro from crog the jucto. ervato: traght forward utl: o KT NN l q

7 (c) d abrut lco jucto at zero ba ha doat cocetrato of N = 7 cm 3 ad N = 5 5 cm 3. T = 300 K. v. Calculate the Ferm level o each de of the jucto wth reect to the trc Ferm level. v. Calculate the bult otetal. v. eterme the eak electrc feld for th jucto. de: 5 KT KT N 5 EF E l l 0.06l 0.33e q q.5 de: 7 KT P KT N E EF l l 0.06l 0.408e q q.5 b 7 5 KT NN 5 l 0.06l q.5 N N N E E ma (0) b cm0.46m ma (0) / 4 cm E E Page 7 of 9

8 Queto 5 (0 mark) b RN a Gve that:. q N N N rve a ereo for the deleto caactace of the +, ad the draw the relato betwee the recrocal of the quared of the caactace ad the revere voltage. b deal oe ded lco + jucto ha uform dog o both de of the abrut jucto. The dog relato N = 50 N. Gve that: b = 0.75, R =, T = 300 K ad the cro ectoal area of the jucto = 5 5 cm, eterme:. N ad N., for R =. The jucto caactace. c half wave rectfer wth a traformer couled ut how the adjacet fgure. raw the waveform o ad. Calculate the value of (), o (), averge ad F out. Soluto (a) b R N q N N N for N N dq d C... d d R C ( b R ) C ( ) ( b R ) C b R b R R. (b) b KT NN 50N l 0.06l q.5 50N l.5 50N N N 50N cm cm 7 3 Page 8 of 9

9 SN ( S P ) N 03. rm ( S )3. 0 oavg OUTf 50 f Hz b R (0.75 ) 4.86 cm.86m C C ( ) b (0.75 ) C 5.55 F / cm R C C F F (c) Page 9 of 9

Semiconductor Device Physics

Semiconductor Device Physics 1 Semcoductor evce Physcs Lecture 7 htt://ztomul.wordress.com 0 1 3 Semcoductor evce Physcs Chater 6 Jucto odes: I-V Characterstcs 3 Chater 6 Jucto odes: I-V Characterstcs Qualtatve ervato Majorty carrers

More information

Lecture #13. Diode Current due to Generation

Lecture #13. Diode Current due to Generation Lecture #13 Juctos OUTLINE reverse bas curret devatos from deal behavor small-sgal model Readg: Chaters 6. & 7 EE13 Lecture 13, Slde 1 Dode Curret due to Geerato If a electro-hole ar s geerated (e.g. by

More information

( ) Thermal noise ktb (T is absolute temperature in kelvin, B is bandwidth, k is Boltzamann s constant) Shot noise

( ) Thermal noise ktb (T is absolute temperature in kelvin, B is bandwidth, k is Boltzamann s constant) Shot noise OISE Thermal oe ktb (T abolute temperature kelv, B badwdth, k Boltzama cotat) 3 k.38 0 joule / kelv ( joule /ecod watt) ( ) v ( freq) 4kTB Thermal oe refer to the ketc eergy of a body of partcle a a reult

More information

Periodic Table of Elements. EE105 - Spring 2007 Microelectronic Devices and Circuits. The Diamond Structure. Electronic Properties of Silicon

Periodic Table of Elements. EE105 - Spring 2007 Microelectronic Devices and Circuits. The Diamond Structure. Electronic Properties of Silicon EE105 - Srg 007 Mcroelectroc Devces ad Crcuts Perodc Table of Elemets Lecture Semcoductor Bascs Electroc Proertes of Slco Slco s Grou IV (atomc umber 14) Atom electroc structure: 1s s 6 3s 3 Crystal electroc

More information

Diode DC Non-ideal Characteristics

Diode DC Non-ideal Characteristics Dode DC No-deal Characterstcs - e qv/kt V reverse curret ot saturated (geerato the deleto rego) dode breakdow 2 3 recombato the deleto rego l( ) 5 hgh-level jecto of morty carrers l( ) sloeq/ηkt V η η2

More information

Space charge. Lecture 8 09/11/2011. p-n junction with gradient. p-n junction with gradient. V. p-n junction. Space charge

Space charge. Lecture 8 09/11/2011. p-n junction with gradient. p-n junction with gradient. V. p-n junction. Space charge ecture 8 09/11/011 Sace charge. - jucto Sace charge th a gradet Out of equlbrum Sace charge -tye ad -tye regos Usually N >>N A thus q N x = N A /(N +N A x = N /(N +N A A ad x = The sace charge exteds towards

More information

Solid State Device Fundamentals

Solid State Device Fundamentals Sold State Devce Fudametals 9 polar jucto trasstor Sold State Devce Fudametals 9. polar Jucto Trasstor NS 345 Lecture ourse by Alexader M. Zatsev alexader.zatsev@cs.cuy.edu Tel: 718 98 81 4N101b Departmet

More information

UNIVERSITY OF CALIFORNIA, BERKELEY DEPARTMENT OF ELECTRICAL ENGINEERING AND COMPUTER SCIENCES. Midterm I

UNIVERSITY OF CALIFORNIA, BERKELEY DEPARTMENT OF ELECTRICAL ENGINEERING AND COMPUTER SCIENCES. Midterm I UNIVERSITY OF CALIFORNIA, BERKELEY EPARTMENT OF ELECTRICAL ENGINEERING AN COMPUTER SCIENCES EECS 130 Professor Chemg Hu Fall 009 Mdterm I Name: Closed book. Oe sheet of otes s allowed. There are 8 pages

More information

1. MOS: Device Operation and Large Signal Model

1. MOS: Device Operation and Large Signal Model 1. MOS: ece Oerato ad arge Sgal Model Readg: Sedra & Smth Sec. 5.1-5.3 (S&S 5 th Ed: Sec. 4.1-4.3) ECE 10, Fall 011, F. Najmabad Oeratoal Bass of a Feld-Effect Trasstor (1) Cosder the hyothetcal semcoductor

More information

Dopant Compensation. Lecture 2. Carrier Drift. Types of Charge in a Semiconductor

Dopant Compensation. Lecture 2. Carrier Drift. Types of Charge in a Semiconductor Lecture OUTLIE Bc Semcoductor Phycs (cot d) rrer d uo P ucto odes Electrosttcs ctce ot omesto tye semcoductor c be coverted to P tye mterl by couter dog t wth ccetors such tht >. comested semcoductor mterl

More information

ECE 595, Section 10 Numerical Simulations Lecture 19: FEM for Electronic Transport. Prof. Peter Bermel February 22, 2013

ECE 595, Section 10 Numerical Simulations Lecture 19: FEM for Electronic Transport. Prof. Peter Bermel February 22, 2013 ECE 595, Secto 0 Numercal Smulatos Lecture 9: FEM for Electroc Trasport Prof. Peter Bermel February, 03 Outle Recap from Wedesday Physcs-based devce modelg Electroc trasport theory FEM electroc trasport

More information

Physics 114 Exam 2 Fall Name:

Physics 114 Exam 2 Fall Name: Physcs 114 Exam Fall 015 Name: For gradg purposes (do ot wrte here): Questo 1. 1... 3. 3. Problem Aswer each of the followg questos. Pots for each questo are dcated red. Uless otherwse dcated, the amout

More information

EE105 - Fall 2006 Microelectronic Devices and Circuits. Your EECS105 Week

EE105 - Fall 2006 Microelectronic Devices and Circuits. Your EECS105 Week EE15 - Fall 6 Mcroelectroc Devces a Crcuts Prof. Ja M. Rabaey (ja@eecs) Lecture : Semcouctor Bascs Your EECS15 Week Mo Tu We Th Fr 9am 1am Lab 353 Cory Lab 353 Cory Lab 353 Cory 11am Dscusso 93 Cory 1pm

More information

The E vs k diagrams are in general a function of the k -space direction in a crystal

The E vs k diagrams are in general a function of the k -space direction in a crystal vs dagram p m m he parameter s called the crystal mometum ad s a parameter that results from applyg Schrödger wave equato to a sgle-crystal lattce. lectros travelg dfferet drectos ecouter dfferet potetal

More information

Homework #2 Solutions, EE/MSE 486, Spring 2017 Problem 1:

Homework #2 Solutions, EE/MSE 486, Spring 2017 Problem 1: Homework # Solutos, EE/MSE 486, Sprg 017 Problem 1: P o p N N A ( N N A) Here / for type dopg; 4 p p N A N ( N A N) / for p type dog. 4 At 1000C, 3.1*10 16 3/ From the table the otes, we have T 0.603eV

More information

Block-Based Compact Thermal Modeling of Semiconductor Integrated Circuits

Block-Based Compact Thermal Modeling of Semiconductor Integrated Circuits Block-Based Compact hermal Modelg of Semcoductor Itegrated Crcuts Master s hess Defese Caddate: Jg Ba Commttee Members: Dr. Mg-Cheg Cheg Dr. Daqg Hou Dr. Robert Schllg July 27, 2009 Outle Itroducto Backgroud

More information

6.4.5 MOS capacitance-voltage analysis

6.4.5 MOS capacitance-voltage analysis 6.4.5 MOS capactace-voltage aalyss arous parameters of a MOS devce ca be determed from the - characterstcs.. Type of substrate dopg. Isulator capactace = /d sulator thckess d 3. The mmum depleto capactace

More information

ECE606: Solid State Devices Lecture 13 Solutions of the Continuity Eqs. Analytical & Numerical

ECE606: Solid State Devices Lecture 13 Solutions of the Continuity Eqs. Analytical & Numerical ECE66: Sold State Devces Lecture 13 Solutos of the Cotuty Eqs. Aalytcal & Numercal Gerhard Klmeck gekco@purdue.edu Outle Aalytcal Solutos to the Cotuty Equatos 1) Example problems ) Summary Numercal Solutos

More information

ROOT-LOCUS ANALYSIS. Lecture 11: Root Locus Plot. Consider a general feedback control system with a variable gain K. Y ( s ) ( ) K

ROOT-LOCUS ANALYSIS. Lecture 11: Root Locus Plot. Consider a general feedback control system with a variable gain K. Y ( s ) ( ) K ROOT-LOCUS ANALYSIS Coder a geeral feedback cotrol yte wth a varable ga. R( Y( G( + H( Root-Locu a plot of the loc of the pole of the cloed-loop trafer fucto whe oe of the yte paraeter ( vared. Root locu

More information

Carrier Action under Perturbation

Carrier Action under Perturbation Carrer Acto uder Perturbato Eulbrum: o curret ad o formato ca be represeted. Ferm-level s flat! Perturbato s ecessary to artfcally ecode formato perturbed states: electrc feld (drft), cocetrato gradet

More information

Capacitors and PN Junctions. Lecture 8: Prof. Niknejad. Department of EECS University of California, Berkeley. EECS 105 Fall 2003, Lecture 8

Capacitors and PN Junctions. Lecture 8: Prof. Niknejad. Department of EECS University of California, Berkeley. EECS 105 Fall 2003, Lecture 8 CS 15 Fall 23, Lecture 8 Lecture 8: Capacitor ad PN Juctio Prof. Nikejad Lecture Outlie Review of lectrotatic IC MIM Capacitor No-Liear Capacitor PN Juctio Thermal quilibrium lectrotatic Review 1 lectric

More information

Reaction Time VS. Drug Percentage Subject Amount of Drug Times % Reaction Time in Seconds 1 Mary John Carl Sara William 5 4

Reaction Time VS. Drug Percentage Subject Amount of Drug Times % Reaction Time in Seconds 1 Mary John Carl Sara William 5 4 CHAPTER Smple Lear Regreo EXAMPLE A expermet volvg fve ubject coducted to determe the relatohp betwee the percetage of a certa drug the bloodtream ad the legth of tme t take the ubject to react to a tmulu.

More information

Multiple Choice Test. Chapter Adequacy of Models for Regression

Multiple Choice Test. Chapter Adequacy of Models for Regression Multple Choce Test Chapter 06.0 Adequac of Models for Regresso. For a lear regresso model to be cosdered adequate, the percetage of scaled resduals that eed to be the rage [-,] s greater tha or equal to

More information

Simple Linear Regression Analysis

Simple Linear Regression Analysis LINEAR REGREION ANALYSIS MODULE II Lecture - 5 Smple Lear Regreo Aaly Dr Shalabh Departmet of Mathematc Stattc Ida Ittute of Techology Kapur Jot cofdece rego for A jot cofdece rego for ca alo be foud Such

More information

REVIEW OF SIMPLE LINEAR REGRESSION SIMPLE LINEAR REGRESSION

REVIEW OF SIMPLE LINEAR REGRESSION SIMPLE LINEAR REGRESSION REVIEW OF SIMPLE LINEAR REGRESSION SIMPLE LINEAR REGRESSION I lear regreo, we coder the frequecy dtrbuto of oe varable (Y) at each of everal level of a ecod varable (X). Y kow a the depedet varable. The

More information

Ellipsometry Overview

Ellipsometry Overview llpsometry Overvew ~ R Δ p ρ = ta( Ψ) e = ~ Rs ñ(λ) = (λ) + k(λ) ε = ñ 2 p-plae s-plae p-plae plae of cdece s-plae llpsometry buldg-blocks Lght ad Polarzato Materals / Optcal Costats Iteracto of Lght wth

More information

Theory study about quarter-wave-stack dielectric mirrors

Theory study about quarter-wave-stack dielectric mirrors Theor tud about quarter-wave-tack delectrc rror Stratfed edu tratted reflected reflected Stratfed edu tratted cdet cdet T T Frt, coder a wave roagato a tratfed edu. A we kow, a arbtrarl olared lae wave

More information

EE3310 Class notes Part 2. Solid State Electronic Devices - EE3310. Class notes. p-n junctions

EE3310 Class notes Part 2. Solid State Electronic Devices - EE3310. Class notes. p-n junctions EE3310 Class otes Part Verso: Fall 00 These class otes were orgally based o the hadwrtte otes of Larry Overzet. It s exected that they wll be modfed (mroved?) as tme goes o. Ths verso was tyed u by Matthew

More information

Module 1 : The equation of continuity. Lecture 5: Conservation of Mass for each species. & Fick s Law

Module 1 : The equation of continuity. Lecture 5: Conservation of Mass for each species. & Fick s Law Module : The equato of cotuty Lecture 5: Coservato of Mass for each speces & Fck s Law NPTEL, IIT Kharagpur, Prof. Sakat Chakraborty, Departmet of Chemcal Egeerg 2 Basc Deftos I Mass Trasfer, we usually

More information

ECSE-6300 IC Fabrication Laboratory Lecture 6 Diffusion in Silicon. Lecture Outline

ECSE-6300 IC Fabrication Laboratory Lecture 6 Diffusion in Silicon. Lecture Outline ECSE-6300 IC Fabrcato Laboratory Lecture 6 ffuso Slco Prof. Resselaer Polytechc Isttute Troy, NY 1180 Offce: CII-69 Tel.: (518) 76-909 e-mals: luj@rp.edu http://www.ecse.rp.edu/courses/s16/ecse 6300/dex.html

More information

External Electric Field Influence on Charge Carriers and Electrical Parameters of Polycrystalline Silicon Solar Cell

External Electric Field Influence on Charge Carriers and Electrical Parameters of Polycrystalline Silicon Solar Cell Research Joural of Appled ceces, Egeerg ad Techology 4(17: 967-97, 1 IN: 4-7467 Maxwell cetfc Orgazato, 1 ubmtted: ecember, 11 Accepted: Jauary 1, 1 Publshed: eptember 1, 1 Exteral Electrc Feld Ifluece

More information

Predicting the eruption time after observed an eruption of 4 minutes in duration.

Predicting the eruption time after observed an eruption of 4 minutes in duration. Lear Regreo ad Correlato 00 Predctg the erupto tme after oberved a erupto of 4 mute durato. 90 80 70 Iter-erupto Tme.5.0.5 3.0 3.5 4.0 4.5 5.0 5.5 Durato A ample of tererupto tme wa take durg Augut -8,

More information

Born-Oppenheimer Approximation. Kaito Takahashi

Born-Oppenheimer Approximation. Kaito Takahashi o-oppehee ppoato Kato Takahah toc Ut Fo quatu yte uch a ecto ad olecule t eae to ue ut that ft the=tomc UNT Ue a of ecto (ot kg) Ue chage of ecto (ot coulob) Ue hba fo agula oetu (ot kg - ) Ue 4pe 0 fo

More information

( ) 2 2. Multi-Layer Refraction Problem Rafael Espericueta, Bakersfield College, November, 2006

( ) 2 2. Multi-Layer Refraction Problem Rafael Espericueta, Bakersfield College, November, 2006 Mult-Layer Refracto Problem Rafael Espercueta, Bakersfeld College, November, 006 Lght travels at dfferet speeds through dfferet meda, but refracts at layer boudares order to traverse the least-tme path.

More information

Regression and the LMS Algorithm

Regression and the LMS Algorithm CSE 556: Itroducto to Neural Netorks Regresso ad the LMS Algorthm CSE 556: Regresso 1 Problem statemet CSE 556: Regresso Lear regresso th oe varable Gve a set of N pars of data {, d }, appromate d b a

More information

ECE606: Solid State Devices Lecture 11 Interface States Recombination Carrier Transport

ECE606: Solid State Devices Lecture 11 Interface States Recombination Carrier Transport C606: Sold State eves Leture Iterfae States Reombato Carrer Trasport Gerhard Klmek geko@purdue.edu Outle ) SRH formula adapted to terfae states ) Surfae reombato depleto rego 3) Coluso Surfae Reombato

More information

Lecture 2. Dopant Compensation

Lecture 2. Dopant Compensation Lecture 2 OUTLINE Bac Semicoductor Phycs (cot d) (cotd) Carrier ad uo PN uctio iodes Electrostatics Caacitace Readig: Chater 2.1 2.2 EE105 Srig 2008 Lecture 1, 2, Slide 1 Prof. Wu, UC Berkeley oat Comesatio

More information

Basic Physics of Semiconductors

Basic Physics of Semiconductors Chater 2 Basic Physics of Semicoductors 2.1 Semicoductor materials ad their roerties 2.2 PN-juctio diodes 2.3 Reverse Breakdow 1 Semicoductor Physics Semicoductor devices serve as heart of microelectroics.

More information

Correlation and Regression Analysis

Correlation and Regression Analysis Chapter V Correlato ad Regresso Aalss R. 5.. So far we have cosdered ol uvarate dstrbutos. Ma a tme, however, we come across problems whch volve two or more varables. Ths wll be the subject matter of the

More information

University of California at Berkeley College of Engineering Dept. of Electrical Engineering and Computer Sciences.

University of California at Berkeley College of Engineering Dept. of Electrical Engineering and Computer Sciences. Uversty of Clfor t Berkeley College of Egeerg et. of Electrcl Egeerg Comuter Sceces EE 5 Mterm I Srg 6 Prof. Mg C. u Feb. 3, 6 Gueles Close book otes. Oe-ge formto sheet llowe. There re some useful formuls

More information

Quiz 1- Linear Regression Analysis (Based on Lectures 1-14)

Quiz 1- Linear Regression Analysis (Based on Lectures 1-14) Quz - Lear Regreo Aaly (Baed o Lecture -4). I the mple lear regreo model y = β + βx + ε, wth Tme: Hour Ε ε = Ε ε = ( ) 3, ( ), =,,...,, the ubaed drect leat quare etmator ˆβ ad ˆβ of β ad β repectvely,

More information

UNIVERSITY OF OSLO DEPARTMENT OF ECONOMICS

UNIVERSITY OF OSLO DEPARTMENT OF ECONOMICS UNIVERSITY OF OSLO DEPARTMENT OF ECONOMICS Postpoed exam: ECON430 Statstcs Date of exam: Jauary 0, 0 Tme for exam: 09:00 a.m. :00 oo The problem set covers 5 pages Resources allowed: All wrtte ad prted

More information

Built in Potential, V 0

Built in Potential, V 0 9/5/7 Indan Insttute of Technology Jodhur, Year 7 nalog Electroncs (Course Code: EE34) Lecture 3 4: ode contd Course Instructor: hree Prakash Twar Emal: stwar@tj.ac.n Webage: htt://home.tj.ac.n/~stwar/

More information

2. Independence and Bernoulli Trials

2. Independence and Bernoulli Trials . Ideedece ad Beroull Trals Ideedece: Evets ad B are deedet f B B. - It s easy to show that, B deedet mles, B;, B are all deedet ars. For examle, ad so that B or B B B B B φ,.e., ad B are deedet evets.,

More information

EVALUATION OF PERFORMANCE MEASURES OF FMS Bottleneck Model. Part mix Mix of the various part or product styles produced by the system

EVALUATION OF PERFORMANCE MEASURES OF FMS Bottleneck Model. Part mix Mix of the various part or product styles produced by the system Natoal Ittute of Techology Calcut Deartmet of Mechacal Egeerg EVALUATION OF PERFORMANCE MEASURES OF FMS Bottleeck Model Provde tartg etmate of FMS deg arameter uch a roducto rate ad umber of worktato Bottleeck

More information

Trignometric Inequations and Fuzzy Information Theory

Trignometric Inequations and Fuzzy Information Theory Iteratoal Joural of Scetfc ad Iovatve Mathematcal Reearch (IJSIMR) Volume, Iue, Jauary - 0, PP 00-07 ISSN 7-07X (Prt) & ISSN 7- (Ole) www.arcjoural.org Trgometrc Iequato ad Fuzzy Iformato Theory P.K. Sharma,

More information

Basic Physics of Semiconductors

Basic Physics of Semiconductors Chater 2 Basic Physics of Semicoductors 2.1 Semicoductor materials ad their roerties 2.2 PN-juctio diodes 2.3 Reverse Breakdow 1 Semicoductor Physics Semicoductor devices serve as heart of microelectroics.

More information

L5 Polynomial / Spline Curves

L5 Polynomial / Spline Curves L5 Polyomal / Sple Curves Cotets Coc sectos Polyomal Curves Hermte Curves Bezer Curves B-Sples No-Uform Ratoal B-Sples (NURBS) Mapulato ad Represetato of Curves Types of Curve Equatos Implct: Descrbe a

More information

PGE 310: Formulation and Solution in Geosystems Engineering. Dr. Balhoff. Interpolation

PGE 310: Formulation and Solution in Geosystems Engineering. Dr. Balhoff. Interpolation PGE 30: Formulato ad Soluto Geosystems Egeerg Dr. Balhoff Iterpolato Numercal Methods wth MATLAB, Recktewald, Chapter 0 ad Numercal Methods for Egeers, Chapra ad Caale, 5 th Ed., Part Fve, Chapter 8 ad

More information

European Journal of Mathematics and Computer Science Vol. 5 No. 2, 2018 ISSN

European Journal of Mathematics and Computer Science Vol. 5 No. 2, 2018 ISSN Europea Joural of Mathematc ad Computer Scece Vol. 5 o., 018 ISS 059-9951 APPLICATIO OF ASYMPTOTIC DISTRIBUTIO OF MA-HITEY STATISTIC TO DETERMIE THE DIFFERECE BETEE THE SYSTOLIC BLOOD PRESSURE OF ME AD

More information

MOSFET Internal Capacitances

MOSFET Internal Capacitances ead MOSFET Iteral aactace S&S (5ed): Sec. 4.8, 4.9, 6.4, 6.6 S&S (6ed): Sec. 9., 9.., 9.3., 9.4-9.5 The curret-voltae relatoh we have dcued thu far for the MOSFET cature the ehavor at low ad oderate frequece.

More information

Overview of Silicon p-n Junctions

Overview of Silicon p-n Junctions Overview of Silico - Juctios r. avid W. Graham West irgiia Uiversity Lae eartmet of omuter Sciece ad Electrical Egieerig 9 avid W. Graham 1 - Juctios (iodes) - Juctios (iodes) Fudametal semicoductor device

More information

Lecture 3. Electron and Hole Transport in Semiconductors

Lecture 3. Electron and Hole Transport in Semiconductors Lecture 3 lectro ad Hole Trasort i Semicoductors I this lecture you will lear: How electros ad holes move i semicoductors Thermal motio of electros ad holes lectric curret via lectric curret via usio Semicoductor

More information

Semiconductors. PN junction. n- type

Semiconductors. PN junction. n- type Semicoductors. PN juctio We have reviously looked at the electroic roerties of itrisic, - tye ad - time semicoductors. Now we will look at what haes to the electroic structure ad macroscoic characteristics

More information

European Journal of Mathematics and Computer Science Vol. 5 No. 2, 2018 ISSN

European Journal of Mathematics and Computer Science Vol. 5 No. 2, 2018 ISSN Europea Joural of Mathematc ad Computer Scece Vol. 5 o., 018 ISS 059-9951 APPLICATIO OF ASYMPTOTIC DISTRIBUTIO OF MA-HITEY STATISTIC TO DETERMIE THE DIFFERECE BETEE THE SYSTOLIC BLOOD PRESSURE OF ME AD

More information

CSE 5526: Introduction to Neural Networks Linear Regression

CSE 5526: Introduction to Neural Networks Linear Regression CSE 556: Itroducto to Neural Netorks Lear Regresso Part II 1 Problem statemet Part II Problem statemet Part II 3 Lear regresso th oe varable Gve a set of N pars of data , appromate d by a lear fucto

More information

10.2 Series. , we get. which is called an infinite series ( or just a series) and is denoted, for short, by the symbol. i i n

10.2 Series. , we get. which is called an infinite series ( or just a series) and is denoted, for short, by the symbol. i i n 0. Sere I th ecto, we wll troduce ere tht wll be dcug for the ret of th chpter. Wht ere? If we dd ll term of equece, we get whch clled fte ere ( or jut ere) d deoted, for hort, by the ymbol or Doe t mke

More information

3. Carriers. 3.1 Carriers in semiconductors. 3.2 Equilibrium Carriers. 3.3 Excess Carriers

3. Carriers. 3.1 Carriers in semiconductors. 3.2 Equilibrium Carriers. 3.3 Excess Carriers 3. Carrers v.18.aug 3.1 Carrers semcoductors tyes (electros, holes), roertes (charge, mass, m eergy, coducto) trsc / extrsc morty / majorty 3. qulbrum Carrers ad grahcal / aalytcal solutos mass acto law

More information

Lecture 7. Large and Small Signal Modelling of PN Junction Diodes

Lecture 7. Large and Small Signal Modelling of PN Junction Diodes ecture 7 are a Small Sal Moell of PN Jucto oes ths lecture you wll lear: Crcut moels of PN jucto oes Small sal moel of olear crcut elemets Small sal moels of PN jucto oes Jucto resstace a cataces Curret

More information

Fig. 1: Streamline coordinates

Fig. 1: Streamline coordinates 1 Equatio of Motio i Streamlie Coordiate Ai A. Soi, MIT 2.25 Advaced Fluid Mechaic Euler equatio expree the relatiohip betwee the velocity ad the preure field i ivicid flow. Writte i term of treamlie coordiate,

More information

On a Truncated Erlang Queuing System. with Bulk Arrivals, Balking and Reneging

On a Truncated Erlang Queuing System. with Bulk Arrivals, Balking and Reneging Appled Mathematcal Scece Vol. 3 9 o. 3 3-3 O a Trucated Erlag Queug Sytem wth Bul Arrval Balg ad Reegg M. S. El-aoumy ad M. M. Imal Departmet of Stattc Faculty Of ommerce Al- Azhar Uverty. Grl Brach Egypt

More information

ELECTRICAL PROPEORTIES OF SOLIDS

ELECTRICAL PROPEORTIES OF SOLIDS DO PHYSICS ONLINE ELECTRICAL PROPEORTIES OF SOLIDS ATOMIC STRUCTURE ucleus: rotos () & electros electros (-): electro cloud h h DE BROGLIE wave model of articles mv ELECTRONS IN ATOMS eergy levels i atoms

More information

Centroids & Moments of Inertia of Beam Sections

Centroids & Moments of Inertia of Beam Sections RCH 614 Note Set 8 S017ab Cetrods & Momets of erta of Beam Sectos Notato: b C d d d Fz h c Jo L O Q Q = ame for area = ame for a (base) wdth = desgato for chael secto = ame for cetrod = calculus smbol

More information

SCIENCE CHINA Technological Sciences. Theoretical study of piezotronic heterojunction

SCIENCE CHINA Technological Sciences. Theoretical study of piezotronic heterojunction SCIENCE CHINA Techologcal Sceces November do: 10.1007/s11431-013-5358-3 013 Vol.56 No.11: 1 7 do: 10.1007/s11431-013-5358-3 Theoretcal study of ezotroc heterojucto FENG XaoLog 1 ZHANG Ya 1* & WANG ZhogL

More information

EP2200 Queueing theory and teletraffic systems. Queueing networks. Viktoria Fodor KTH EES/LCN KTH EES/LCN

EP2200 Queueing theory and teletraffic systems. Queueing networks. Viktoria Fodor KTH EES/LCN KTH EES/LCN EP2200 Queueg theory ad teletraffc systems Queueg etworks Vktora Fodor Ope ad closed queug etworks Queug etwork: etwork of queug systems E.g. data packets traversg the etwork from router to router Ope

More information

Uniform magnetic susceptibilities

Uniform magnetic susceptibilities Uform magetc susceptbltes Typcal behavors ad measuremet techques SUSCPTIILIT UNIFORM & MAGNTOMTRIS page 1 - M ICFP- lectroc propertes of solds (Fabrce ert Varous behavors of M(H magetzato M Lear respose

More information

CS473-Algorithms I. Lecture 12b. Dynamic Tables. CS 473 Lecture X 1

CS473-Algorithms I. Lecture 12b. Dynamic Tables. CS 473 Lecture X 1 CS473-Algorthm I Lecture b Dyamc Table CS 473 Lecture X Why Dyamc Table? I ome applcato: We do't kow how may object wll be tored a table. We may allocate pace for a table But, later we may fd out that

More information

Lecture Notes #9: Class #11

Lecture Notes #9: Class #11 Chem 40a Lecture Note #9: Cla # ecombiatio uder differet light iteity - Low level ijectio v High level ijectio We looed at recombiatio/geeratio : We uually wor away from the equilibrium. o we wat

More information

For the following statements, mark ( ) for true statement and (X) for wrong statement and correct it.

For the following statements, mark ( ) for true statement and (X) for wrong statement and correct it. Benha University Faculty of Engineering Shoubra Electrical Engineering Department First Year communications. Answer all the following questions Illustrate your answers with sketches when necessary. The

More information

REVIEW OF SIMPLE LINEAR REGRESSION SIMPLE LINEAR REGRESSION

REVIEW OF SIMPLE LINEAR REGRESSION SIMPLE LINEAR REGRESSION REVIEW OF SIMPLE LINEAR REGRESSION SIMPLE LINEAR REGRESSION I liear regreio, we coider the frequecy ditributio of oe variable (Y) at each of everal level of a ecod variable (X). Y i kow a the depedet variable.

More information

b. There appears to be a positive relationship between X and Y; that is, as X increases, so does Y.

b. There appears to be a positive relationship between X and Y; that is, as X increases, so does Y. .46. a. The frst varable (X) s the frst umber the par ad s plotted o the horzotal axs, whle the secod varable (Y) s the secod umber the par ad s plotted o the vertcal axs. The scatterplot s show the fgure

More information

Power Flow S + Buses with either or both Generator Load S G1 S G2 S G3 S D3 S D1 S D4 S D5. S Dk. Injection S G1

Power Flow S + Buses with either or both Generator Load S G1 S G2 S G3 S D3 S D1 S D4 S D5. S Dk. Injection S G1 ower Flow uses wth ether or both Geerator Load G G G D D 4 5 D4 D5 ecto G Net Comple ower ecto - D D ecto s egatve sg at load bus = _ G D mlarl Curret ecto = G _ D At each bus coservato of comple power

More information

Signal,autocorrelation -0.6

Signal,autocorrelation -0.6 Sgal,autocorrelato Phase ose p/.9.3.7. -.5 5 5 5 Tme Sgal,autocorrelato Phase ose p/.5..7.3 -. -.5 5 5 5 Tme Sgal,autocorrelato. Phase ose p/.9.3.7. -.5 5 5 5 Tme Sgal,autocorrelato. Phase ose p/.8..6.

More information

Lecture 7: Properties of Materials for Integrated Circuits Context

Lecture 7: Properties of Materials for Integrated Circuits Context Lecture 7: Propertes of Materals for Itegrate Crcuts Cotext Over the last two weeks, we revewe: Basc passve compoets Capactors Resstors Iuctors Lear crcut moels Phasor otato Trasfer fuctos Boe plots 1

More information

8 The independence problem

8 The independence problem Noparam Stat 46/55 Jame Kwo 8 The depedece problem 8.. Example (Tua qualty) ## Hollader & Wolfe (973), p. 87f. ## Aemet of tua qualty. We compare the Huter L meaure of ## lghte to the average of coumer

More information

{ }{ ( )} (, ) = ( ) ( ) ( ) Chapter 14 Exercises in Sampling Theory. Exercise 1 (Simple random sampling): Solution:

{ }{ ( )} (, ) = ( ) ( ) ( ) Chapter 14 Exercises in Sampling Theory. Exercise 1 (Simple random sampling): Solution: Chapter 4 Exercses Samplg Theory Exercse (Smple radom samplg: Let there be two correlated radom varables X ad A sample of sze s draw from a populato by smple radom samplg wthout replacemet The observed

More information

Silicon solar cell under electromagnetic wave in steady state: effect of the telecommunication source's power of radiation

Silicon solar cell under electromagnetic wave in steady state: effect of the telecommunication source's power of radiation IOP Coferece Seres: Materals Scece ad Egeerg Slco solar cell uder electromagetc wave steady state: effect of the telecommucato source's power of radato To cte ths artcle: I Zerbo et al 1 IOP Cof. Ser.:

More information

UNIT 2 SOLUTION OF ALGEBRAIC AND TRANSCENDENTAL EQUATIONS

UNIT 2 SOLUTION OF ALGEBRAIC AND TRANSCENDENTAL EQUATIONS Numercal Computg -I UNIT SOLUTION OF ALGEBRAIC AND TRANSCENDENTAL EQUATIONS Structure Page Nos..0 Itroducto 6. Objectves 7. Ital Approxmato to a Root 7. Bsecto Method 8.. Error Aalyss 9.4 Regula Fals Method

More information

Suppresion of Corona in Stator Winding of Synchronous Machines

Suppresion of Corona in Stator Winding of Synchronous Machines Proceedgs of the 5th WSES t. Cof. o Power Systems ad Electromagetc Compatblty, Corfu, Greece, ugust 23-25, 25 (pp38-42) Suppreso of Coroa Stator Wdg of Sychroous Maches DNEL MYE Departmet of Theory of

More information

COLLEGE OF ENGINEERING PUTRAJAYA CAMPUS FINAL EXAMINATION SEMESTER / 2014

COLLEGE OF ENGINEERING PUTRAJAYA CAMPUS FINAL EXAMINATION SEMESTER / 2014 OLLEGE OF ENGNEERNG PUTRAJAYA AMPUS FNAL EXAMNATON SEMESTER 013 / 014 PROGRAMME SUBJET ODE SUBJET : Bachelor of Electrcal & Electrocs Egeerg (Hoours) Bachelor of Electrcal Power Egeerg (Hoours) : EEEB73

More information

Spreadsheet Problem Solving

Spreadsheet Problem Solving 1550 1500 CO Emmssos for the US, 1989 000 Class meetg #6 Moday, Sept 14 th CO Emssos (MMT Carbo) y = 1.3x 41090.17 1450 1400 1350 1300 1989 1990 1991 199 1993 1994 1995 1996 1997 1998 1999 000 Year GEEN

More information

ABSTRACT. Siddharth Potbhare Master of Science, 2005

ABSTRACT. Siddharth Potbhare Master of Science, 2005 ABSTRACT Ttle of Thess: CHARACTERIZATION OF 4H-SC MOSFETs USING FIRST PRINCIPLES COULOMB SCATTERING MOBILITY MODELING AND DEVICE SIMULATION Sddharth Potbhare Master of Scece 005 Thess drected by: Professor

More information

INTRODUCTION TO INERTIAL CONFINEMENT FUSION

INTRODUCTION TO INERTIAL CONFINEMENT FUSION INRODUCION O INERIAL CONFINEMEN FUSION R. Bett Lecture 1 Formula or hot pot temperature Reved dyamc model ad gto codto Etropy he ormula below wa derved Lecture 9. It repreet the maxmum value o the cetral

More information

Computational Geometry

Computational Geometry Problem efto omputatoal eometry hapter 6 Pot Locato Preprocess a plaar map S. ve a query pot p, report the face of S cotag p. oal: O()-sze data structure that eables O(log ) query tme. pplcato: Whch state

More information

Quiz #3 Practice Problem Set

Quiz #3 Practice Problem Set Name: Studet Number: ELEC 3908 Physical Electroics Quiz #3 Practice Problem Set? Miutes March 11, 2016 - No aids excet a o-rogrammable calculator - ll questios must be aswered - ll questios have equal

More information

1. Linear second-order circuits

1. Linear second-order circuits ear eco-orer crcut Sere R crcut Dyamc crcut cotag two capactor or two uctor or oe uctor a oe capactor are calle the eco orer crcut At frt we coer a pecal cla of the eco-orer crcut, amely a ere coecto of

More information

ON THE MOTION OF PLANAR BARS SYSTEMS WITH CLEARANCES IN JOINTS

ON THE MOTION OF PLANAR BARS SYSTEMS WITH CLEARANCES IN JOINTS ON THE MOTION OF PLANAR BARS SYSTEMS WITH CLEARANCES IN JOINTS Şl uv dr g Ja-Crsta GRIGORE, Uverstatea d Pteşt, strtîrgu dvale Nr Prof uv dr g Ncolae PANDREA, Uverstatea d Pteşt, strtîrgu dvale Nr Cof

More information

On the energy of complement of regular line graphs

On the energy of complement of regular line graphs MATCH Coucato Matheatcal ad Coputer Chetry MATCH Cou Math Coput Che 60 008) 47-434 ISSN 0340-653 O the eergy of copleet of regular le graph Fateeh Alaghpour a, Baha Ahad b a Uverty of Tehra, Tehra, Ira

More information

Functions of Random Variables

Functions of Random Variables Fuctos of Radom Varables Chapter Fve Fuctos of Radom Varables 5. Itroducto A geeral egeerg aalyss model s show Fg. 5.. The model output (respose) cotas the performaces of a system or product, such as weght,

More information

å 1 13 Practice Final Examination Solutions - = CS109 Dec 5, 2018

å 1 13 Practice Final Examination Solutions - = CS109 Dec 5, 2018 Chrs Pech Fal Practce CS09 Dec 5, 08 Practce Fal Examato Solutos. Aswer: 4/5 8/7. There are multle ways to obta ths aswer; here are two: The frst commo method s to sum over all ossbltes for the rak of

More information

Simple Linear Regression. How To Study Relation Between Two Quantitative Variables? Scatter Plot. Pearson s Sample Correlation.

Simple Linear Regression. How To Study Relation Between Two Quantitative Variables? Scatter Plot. Pearson s Sample Correlation. Correlato & Regreo How To Study Relato Betwee Two Quattatve Varable? Smple Lear Regreo 6. A Smple Regreo Problem I there relato betwee umber of power boat the area ad umber of maatee klled? Year NPB( )

More information

Problem Set 3: Model Solutions

Problem Set 3: Model Solutions Ecoomc 73 Adaced Mcroecoomc Problem et 3: Model oluto. Coder a -bdder aucto wth aluato deedetly ad detcally dtrbuted accordg to F( ) o uort [,]. Let the hghet bdder ay the rce ( - k)b f + kb to the eller,

More information

Chapter 6. pn-junction diode: I-V characteristics

Chapter 6. pn-junction diode: I-V characteristics Chatr 6. -jucto dod: -V charactrstcs Tocs: stady stat rsos of th jucto dod udr ald d.c. voltag. ucto udr bas qualtatv dscusso dal dod quato Dvatos from th dal dod Charg-cotrol aroach Prof. Yo-S M Elctroc

More information

State space systems analysis

State space systems analysis State pace ytem aalyi Repreetatio of a ytem i tate-pace (tate-pace model of a ytem To itroduce the tate pace formalim let u tart with a eample i which the ytem i dicuio i a imple electrical circuit with

More information

C-1: Aerodynamics of Airfoils 1 C-2: Aerodynamics of Airfoils 2 C-3: Panel Methods C-4: Thin Airfoil Theory

C-1: Aerodynamics of Airfoils 1 C-2: Aerodynamics of Airfoils 2 C-3: Panel Methods C-4: Thin Airfoil Theory ROAD MAP... AE301 Aerodyamcs I UNIT C: 2-D Arfols C-1: Aerodyamcs of Arfols 1 C-2: Aerodyamcs of Arfols 2 C-3: Pael Methods C-4: Th Arfol Theory AE301 Aerodyamcs I Ut C-3: Lst of Subects Problem Solutos?

More information

Available online at ScienceDirect. Energy Procedia 55 (2014 ) The recombination parameter J 0.

Available online at   ScienceDirect. Energy Procedia 55 (2014 ) The recombination parameter J 0. valable ole at www.scecedrect.com SceceDrect Eergy Proceda 55 (014 ) 53 6 4 Iteratoal Coferece o Slco Photovoltacs, SlcoPV 014 The recombato arameter 0 dres Cuevas* Research School of Egeerg, The ustrala

More information

Singular Value Decomposition. Linear Algebra (3) Singular Value Decomposition. SVD and Eigenvectors. Solving LEs with SVD

Singular Value Decomposition. Linear Algebra (3) Singular Value Decomposition. SVD and Eigenvectors. Solving LEs with SVD Sgular Value Decomosto Lear Algera (3) m Cootes Ay m x matrx wth m ca e decomosed as follows Dagoal matrx A UWV m x x Orthogoal colums U U I w1 0 0 w W M M 0 0 x Orthoormal (Pure rotato) VV V V L 0 L 0

More information

STA 108 Applied Linear Models: Regression Analysis Spring Solution for Homework #1

STA 108 Applied Linear Models: Regression Analysis Spring Solution for Homework #1 STA 08 Appled Lear Models: Regresso Aalyss Sprg 0 Soluto for Homework #. Let Y the dollar cost per year, X the umber of vsts per year. The the mathematcal relato betwee X ad Y s: Y 300 + X. Ths s a fuctoal

More information

The Selection Problem - Variable Size Decrease/Conquer (Practice with algorithm analysis)

The Selection Problem - Variable Size Decrease/Conquer (Practice with algorithm analysis) We have covered: Selecto, Iserto, Mergesort, Bubblesort, Heapsort Next: Selecto the Qucksort The Selecto Problem - Varable Sze Decrease/Coquer (Practce wth algorthm aalyss) Cosder the problem of fdg the

More information