d b c d a c a a a c d b
|
|
- Rosemary McDonald
- 5 years ago
- Views:
Transcription
1 Beha Uverty Faculty of Egeerg Shoubra Electrcal Egeerg eartmet Frt Year commucato. t emeter Eam ate: 3 0 ECE: Electroc Egeerg fudametal urato : 3 hour K=.38 3 J/K h= J. q=.6 9 C m o =9. 3 Kg [S] =.5 cm 3 [S] m e =.8 m o [S] m h =0.8 m o [S] E g =. e [S] μ =400 cm /. [S] μ = 400 cm /. ε o = F/cm ε r =.7 Eg =. e Soluto Queto ( mark) wer th queto the form of table. Chooe the correct awer (oly oe awer acceted). For trc emcoductor.. (a) ll bod are comlete at 0 K (b) Part of valace electro releaed at hgh T (c) There are ome murte added (d) Both (a) ad (b) The collo due to. May chage both magtude ad drecto of the carrer eed (a) Iozed murte (b) Lattce vbrato (c) Thermal moto (d) rft of artcle 3 the tme betwee collo creaed, the moblty. (a) Rema cotat (b) ecreaed (c) creaed (d) affected oly by the murte cocetrato 4 the dog cocetrato creae above 5, the moblty. (a) Rema cotat (b) affected oly by the murte cocetrato (c) creaed (d) ecreaed 5 Fck low ca decrbe. (a) ffuo heomea (b) rft heomea (c) Both drft ad dffuo (d) No of the above 6 For the fabrcato of Ga jucto. The mot commo method. (a) ffuo (b) Evaorato (c) Etay (d) Io mlatato 7 The learly graded jucto are uually made by (a) ffuo (b) Evaorato (c) Etay (d) Io mlatato 8 The jucto deleto wdth vare a 3 (a) (b) (c) (d) 9 the revere ba voltage creae, the deleto caactace. (a) ecreae (b) Icreae (c) become zero (d) Rema cotat For the actve mode of oerato of bolar jucto trator. The EBJ/CBJ mut be coected a (a) Forward/Forward (b) Revere/Revere (c) Forward/Revere (d) Revere/forward For a bolar jucto trator (BJT), the bae rego (a) Moderately doed (b) ery th (c) Lghtly doed (d) Both(b) ad(c) Mot of the electro the bae of a trator flow (a) Out of the bae lead (b) Ito the collector (c) Ito the emtter (d) Ito the bae uly d b c d a c a a a c d b Page of 9
2 Queto (0 mark) a I a emcoductor, the Ferm level 50 me below the coducto bad. What the robablty of fdg a electro a tate KT below the valace bad edge E at room temerature? b bar of lco 0. mm log ad ha acro ecto of mm. Oe volt mreed acro the bar reult a curret of 8 m. umg that the curret due to electro, calculate:. Cocetrato of free electro ad. The drft velocty. c The dog roce of a S chage t coductvty. There alway a certa ecfc dog level that caue the coductvty to be a mmum. tye emcoductor doed wth that ecfc level. Calculate the mmum value of the coductvty. (T=300 K) (a) Soluto F( E) e EE F KT E E E E KT E F F E E g E e F e F( E) e (b) R 5 3 I 8 L R 6 R m.5cm 3 L q cm vd E cm / ec 700 m / Page of 9
3 (c) q q e h qe qh d t mmum coductvty 0 d d d qh qe d 0 d qe q h e h e h cm cm m m m cm Page 3 of 9
4 Queto 3 (0 mark) a Ela the deedece of moblty o temerature. (ot more tha 6 le) e KT b Prove that: q e c bar of lco of legth cm llumated at oe ed creatg Δ= Δ = cm 3 ece electro ad hole. If the dffuo legth L for the morty hole 4 3 cm ad f all the ece electro ad hole recombe at the other ed of the bar. Calculate ad lot the teady tate ece morty hole dtrbuto Δ() a fucto of the dtace alog the bar. (Ht Ue the aromato, e =+, for <<.) Soluto (a) t hgh temerature (T>50 K) the moblty maly lmted by the lattce vbrato. μ decreae wth creae of T (μ α T 3/ ). t low temerature (T<50 K) the moblty maly lmted by the ozed murte. μ creae wth creae of T (μ α T 3/ ). (b) EF E e kt de E qd d J qμe q 0 d EF E de q EF E def de qμe e kt q d kt kt d d de F 0 d The q μ kt kt μ q T Page 4 of 9
5 (c) Cotuty equato (o lght/teady tate) Note (the lght aborbed very mall rego.e at =0 ad creatg a ece of morty carrer of cm 3 but the em coductor doe ot eoe to lght 0 L Th equato ha a oluto a: L ( ) Ce C e L Note L = cm ad L = 4 3 cm ce L L L e whe The ( ) C ( ) C ( ) L L or C C ()=(C C ) ( ) L ** t = 0 = o = e C +C = I ** t =L =0 e (C +C ) 0.(C C )=0 II By olvg (I) ad (II) C =5.5 C = 4.5 cm -3 3 =0 X= = cm ( ).5 5 Thu for /L << the dtrbuto become lear ot eoetal a how Page 5 of 9
6 Queto 4 (8 mark) a For the how abrut jucto drve a ereo for the electrc feld the rego < <. b efe: the barrer otetal ad the derve the ereo for the barrer otetal (bult otetal) term of the dog cocetrato c abrut lco jucto at zero ba ha doat cocetrato of N = 7 cm 3 ad N = 5 5 cm 3. T = 300 K.. Calculate the Ferm level o each de of the jucto wth reect to the trc Ferm level.. Calculate the bult otetal.. eterme the eak electrc feld for th jucto. (a) ψ() d E ( ) ρ ( ) d d ε d ψ Soluto E 0 de() d E() E() E 0 de() d E() E E E() E ma E(0) (b) Barrer otetal: whe the tye materal ut cotact wth the tye materal, free electro from tye dffue ad cro the jucto ad combe wth hole the tye materal leavg behd (+ve o) the urface of the tye. Whle ( ve o) o the tye reg. Thee otve ad egatve o createe a electrc feld whch tur roduce a electrcc otetal (barrer otetal) that revet more electro from crog the jucto. ervato: traght forward utl: o KT NN l q
7 (c) d abrut lco jucto at zero ba ha doat cocetrato of N = 7 cm 3 ad N = 5 5 cm 3. T = 300 K. v. Calculate the Ferm level o each de of the jucto wth reect to the trc Ferm level. v. Calculate the bult otetal. v. eterme the eak electrc feld for th jucto. de: 5 KT KT N 5 EF E l l 0.06l 0.33e q q.5 de: 7 KT P KT N E EF l l 0.06l 0.408e q q.5 b 7 5 KT NN 5 l 0.06l q.5 N N N E E ma (0) b cm0.46m ma (0) / 4 cm E E Page 7 of 9
8 Queto 5 (0 mark) b RN a Gve that:. q N N N rve a ereo for the deleto caactace of the +, ad the draw the relato betwee the recrocal of the quared of the caactace ad the revere voltage. b deal oe ded lco + jucto ha uform dog o both de of the abrut jucto. The dog relato N = 50 N. Gve that: b = 0.75, R =, T = 300 K ad the cro ectoal area of the jucto = 5 5 cm, eterme:. N ad N., for R =. The jucto caactace. c half wave rectfer wth a traformer couled ut how the adjacet fgure. raw the waveform o ad. Calculate the value of (), o (), averge ad F out. Soluto (a) b R N q N N N for N N dq d C... d d R C ( b R ) C ( ) ( b R ) C b R b R R. (b) b KT NN 50N l 0.06l q.5 50N l.5 50N N N 50N cm cm 7 3 Page 8 of 9
9 SN ( S P ) N 03. rm ( S )3. 0 oavg OUTf 50 f Hz b R (0.75 ) 4.86 cm.86m C C ( ) b (0.75 ) C 5.55 F / cm R C C F F (c) Page 9 of 9
Semiconductor Device Physics
1 Semcoductor evce Physcs Lecture 7 htt://ztomul.wordress.com 0 1 3 Semcoductor evce Physcs Chater 6 Jucto odes: I-V Characterstcs 3 Chater 6 Jucto odes: I-V Characterstcs Qualtatve ervato Majorty carrers
More informationLecture #13. Diode Current due to Generation
Lecture #13 Juctos OUTLINE reverse bas curret devatos from deal behavor small-sgal model Readg: Chaters 6. & 7 EE13 Lecture 13, Slde 1 Dode Curret due to Geerato If a electro-hole ar s geerated (e.g. by
More information( ) Thermal noise ktb (T is absolute temperature in kelvin, B is bandwidth, k is Boltzamann s constant) Shot noise
OISE Thermal oe ktb (T abolute temperature kelv, B badwdth, k Boltzama cotat) 3 k.38 0 joule / kelv ( joule /ecod watt) ( ) v ( freq) 4kTB Thermal oe refer to the ketc eergy of a body of partcle a a reult
More informationPeriodic Table of Elements. EE105 - Spring 2007 Microelectronic Devices and Circuits. The Diamond Structure. Electronic Properties of Silicon
EE105 - Srg 007 Mcroelectroc Devces ad Crcuts Perodc Table of Elemets Lecture Semcoductor Bascs Electroc Proertes of Slco Slco s Grou IV (atomc umber 14) Atom electroc structure: 1s s 6 3s 3 Crystal electroc
More informationDiode DC Non-ideal Characteristics
Dode DC No-deal Characterstcs - e qv/kt V reverse curret ot saturated (geerato the deleto rego) dode breakdow 2 3 recombato the deleto rego l( ) 5 hgh-level jecto of morty carrers l( ) sloeq/ηkt V η η2
More informationSpace charge. Lecture 8 09/11/2011. p-n junction with gradient. p-n junction with gradient. V. p-n junction. Space charge
ecture 8 09/11/011 Sace charge. - jucto Sace charge th a gradet Out of equlbrum Sace charge -tye ad -tye regos Usually N >>N A thus q N x = N A /(N +N A x = N /(N +N A A ad x = The sace charge exteds towards
More informationSolid State Device Fundamentals
Sold State Devce Fudametals 9 polar jucto trasstor Sold State Devce Fudametals 9. polar Jucto Trasstor NS 345 Lecture ourse by Alexader M. Zatsev alexader.zatsev@cs.cuy.edu Tel: 718 98 81 4N101b Departmet
More informationUNIVERSITY OF CALIFORNIA, BERKELEY DEPARTMENT OF ELECTRICAL ENGINEERING AND COMPUTER SCIENCES. Midterm I
UNIVERSITY OF CALIFORNIA, BERKELEY EPARTMENT OF ELECTRICAL ENGINEERING AN COMPUTER SCIENCES EECS 130 Professor Chemg Hu Fall 009 Mdterm I Name: Closed book. Oe sheet of otes s allowed. There are 8 pages
More information1. MOS: Device Operation and Large Signal Model
1. MOS: ece Oerato ad arge Sgal Model Readg: Sedra & Smth Sec. 5.1-5.3 (S&S 5 th Ed: Sec. 4.1-4.3) ECE 10, Fall 011, F. Najmabad Oeratoal Bass of a Feld-Effect Trasstor (1) Cosder the hyothetcal semcoductor
More informationDopant Compensation. Lecture 2. Carrier Drift. Types of Charge in a Semiconductor
Lecture OUTLIE Bc Semcoductor Phycs (cot d) rrer d uo P ucto odes Electrosttcs ctce ot omesto tye semcoductor c be coverted to P tye mterl by couter dog t wth ccetors such tht >. comested semcoductor mterl
More informationECE 595, Section 10 Numerical Simulations Lecture 19: FEM for Electronic Transport. Prof. Peter Bermel February 22, 2013
ECE 595, Secto 0 Numercal Smulatos Lecture 9: FEM for Electroc Trasport Prof. Peter Bermel February, 03 Outle Recap from Wedesday Physcs-based devce modelg Electroc trasport theory FEM electroc trasport
More informationPhysics 114 Exam 2 Fall Name:
Physcs 114 Exam Fall 015 Name: For gradg purposes (do ot wrte here): Questo 1. 1... 3. 3. Problem Aswer each of the followg questos. Pots for each questo are dcated red. Uless otherwse dcated, the amout
More informationEE105 - Fall 2006 Microelectronic Devices and Circuits. Your EECS105 Week
EE15 - Fall 6 Mcroelectroc Devces a Crcuts Prof. Ja M. Rabaey (ja@eecs) Lecture : Semcouctor Bascs Your EECS15 Week Mo Tu We Th Fr 9am 1am Lab 353 Cory Lab 353 Cory Lab 353 Cory 11am Dscusso 93 Cory 1pm
More informationThe E vs k diagrams are in general a function of the k -space direction in a crystal
vs dagram p m m he parameter s called the crystal mometum ad s a parameter that results from applyg Schrödger wave equato to a sgle-crystal lattce. lectros travelg dfferet drectos ecouter dfferet potetal
More informationHomework #2 Solutions, EE/MSE 486, Spring 2017 Problem 1:
Homework # Solutos, EE/MSE 486, Sprg 017 Problem 1: P o p N N A ( N N A) Here / for type dopg; 4 p p N A N ( N A N) / for p type dog. 4 At 1000C, 3.1*10 16 3/ From the table the otes, we have T 0.603eV
More informationBlock-Based Compact Thermal Modeling of Semiconductor Integrated Circuits
Block-Based Compact hermal Modelg of Semcoductor Itegrated Crcuts Master s hess Defese Caddate: Jg Ba Commttee Members: Dr. Mg-Cheg Cheg Dr. Daqg Hou Dr. Robert Schllg July 27, 2009 Outle Itroducto Backgroud
More information6.4.5 MOS capacitance-voltage analysis
6.4.5 MOS capactace-voltage aalyss arous parameters of a MOS devce ca be determed from the - characterstcs.. Type of substrate dopg. Isulator capactace = /d sulator thckess d 3. The mmum depleto capactace
More informationECE606: Solid State Devices Lecture 13 Solutions of the Continuity Eqs. Analytical & Numerical
ECE66: Sold State Devces Lecture 13 Solutos of the Cotuty Eqs. Aalytcal & Numercal Gerhard Klmeck gekco@purdue.edu Outle Aalytcal Solutos to the Cotuty Equatos 1) Example problems ) Summary Numercal Solutos
More informationROOT-LOCUS ANALYSIS. Lecture 11: Root Locus Plot. Consider a general feedback control system with a variable gain K. Y ( s ) ( ) K
ROOT-LOCUS ANALYSIS Coder a geeral feedback cotrol yte wth a varable ga. R( Y( G( + H( Root-Locu a plot of the loc of the pole of the cloed-loop trafer fucto whe oe of the yte paraeter ( vared. Root locu
More informationCarrier Action under Perturbation
Carrer Acto uder Perturbato Eulbrum: o curret ad o formato ca be represeted. Ferm-level s flat! Perturbato s ecessary to artfcally ecode formato perturbed states: electrc feld (drft), cocetrato gradet
More informationCapacitors and PN Junctions. Lecture 8: Prof. Niknejad. Department of EECS University of California, Berkeley. EECS 105 Fall 2003, Lecture 8
CS 15 Fall 23, Lecture 8 Lecture 8: Capacitor ad PN Juctio Prof. Nikejad Lecture Outlie Review of lectrotatic IC MIM Capacitor No-Liear Capacitor PN Juctio Thermal quilibrium lectrotatic Review 1 lectric
More informationReaction Time VS. Drug Percentage Subject Amount of Drug Times % Reaction Time in Seconds 1 Mary John Carl Sara William 5 4
CHAPTER Smple Lear Regreo EXAMPLE A expermet volvg fve ubject coducted to determe the relatohp betwee the percetage of a certa drug the bloodtream ad the legth of tme t take the ubject to react to a tmulu.
More informationMultiple Choice Test. Chapter Adequacy of Models for Regression
Multple Choce Test Chapter 06.0 Adequac of Models for Regresso. For a lear regresso model to be cosdered adequate, the percetage of scaled resduals that eed to be the rage [-,] s greater tha or equal to
More informationSimple Linear Regression Analysis
LINEAR REGREION ANALYSIS MODULE II Lecture - 5 Smple Lear Regreo Aaly Dr Shalabh Departmet of Mathematc Stattc Ida Ittute of Techology Kapur Jot cofdece rego for A jot cofdece rego for ca alo be foud Such
More informationREVIEW OF SIMPLE LINEAR REGRESSION SIMPLE LINEAR REGRESSION
REVIEW OF SIMPLE LINEAR REGRESSION SIMPLE LINEAR REGRESSION I lear regreo, we coder the frequecy dtrbuto of oe varable (Y) at each of everal level of a ecod varable (X). Y kow a the depedet varable. The
More informationEllipsometry Overview
llpsometry Overvew ~ R Δ p ρ = ta( Ψ) e = ~ Rs ñ(λ) = (λ) + k(λ) ε = ñ 2 p-plae s-plae p-plae plae of cdece s-plae llpsometry buldg-blocks Lght ad Polarzato Materals / Optcal Costats Iteracto of Lght wth
More informationTheory study about quarter-wave-stack dielectric mirrors
Theor tud about quarter-wave-tack delectrc rror Stratfed edu tratted reflected reflected Stratfed edu tratted cdet cdet T T Frt, coder a wave roagato a tratfed edu. A we kow, a arbtrarl olared lae wave
More informationEE3310 Class notes Part 2. Solid State Electronic Devices - EE3310. Class notes. p-n junctions
EE3310 Class otes Part Verso: Fall 00 These class otes were orgally based o the hadwrtte otes of Larry Overzet. It s exected that they wll be modfed (mroved?) as tme goes o. Ths verso was tyed u by Matthew
More informationModule 1 : The equation of continuity. Lecture 5: Conservation of Mass for each species. & Fick s Law
Module : The equato of cotuty Lecture 5: Coservato of Mass for each speces & Fck s Law NPTEL, IIT Kharagpur, Prof. Sakat Chakraborty, Departmet of Chemcal Egeerg 2 Basc Deftos I Mass Trasfer, we usually
More informationECSE-6300 IC Fabrication Laboratory Lecture 6 Diffusion in Silicon. Lecture Outline
ECSE-6300 IC Fabrcato Laboratory Lecture 6 ffuso Slco Prof. Resselaer Polytechc Isttute Troy, NY 1180 Offce: CII-69 Tel.: (518) 76-909 e-mals: luj@rp.edu http://www.ecse.rp.edu/courses/s16/ecse 6300/dex.html
More informationExternal Electric Field Influence on Charge Carriers and Electrical Parameters of Polycrystalline Silicon Solar Cell
Research Joural of Appled ceces, Egeerg ad Techology 4(17: 967-97, 1 IN: 4-7467 Maxwell cetfc Orgazato, 1 ubmtted: ecember, 11 Accepted: Jauary 1, 1 Publshed: eptember 1, 1 Exteral Electrc Feld Ifluece
More informationPredicting the eruption time after observed an eruption of 4 minutes in duration.
Lear Regreo ad Correlato 00 Predctg the erupto tme after oberved a erupto of 4 mute durato. 90 80 70 Iter-erupto Tme.5.0.5 3.0 3.5 4.0 4.5 5.0 5.5 Durato A ample of tererupto tme wa take durg Augut -8,
More informationBorn-Oppenheimer Approximation. Kaito Takahashi
o-oppehee ppoato Kato Takahah toc Ut Fo quatu yte uch a ecto ad olecule t eae to ue ut that ft the=tomc UNT Ue a of ecto (ot kg) Ue chage of ecto (ot coulob) Ue hba fo agula oetu (ot kg - ) Ue 4pe 0 fo
More information( ) 2 2. Multi-Layer Refraction Problem Rafael Espericueta, Bakersfield College, November, 2006
Mult-Layer Refracto Problem Rafael Espercueta, Bakersfeld College, November, 006 Lght travels at dfferet speeds through dfferet meda, but refracts at layer boudares order to traverse the least-tme path.
More informationRegression and the LMS Algorithm
CSE 556: Itroducto to Neural Netorks Regresso ad the LMS Algorthm CSE 556: Regresso 1 Problem statemet CSE 556: Regresso Lear regresso th oe varable Gve a set of N pars of data {, d }, appromate d b a
More informationECE606: Solid State Devices Lecture 11 Interface States Recombination Carrier Transport
C606: Sold State eves Leture Iterfae States Reombato Carrer Trasport Gerhard Klmek geko@purdue.edu Outle ) SRH formula adapted to terfae states ) Surfae reombato depleto rego 3) Coluso Surfae Reombato
More informationLecture 2. Dopant Compensation
Lecture 2 OUTLINE Bac Semicoductor Phycs (cot d) (cotd) Carrier ad uo PN uctio iodes Electrostatics Caacitace Readig: Chater 2.1 2.2 EE105 Srig 2008 Lecture 1, 2, Slide 1 Prof. Wu, UC Berkeley oat Comesatio
More informationBasic Physics of Semiconductors
Chater 2 Basic Physics of Semicoductors 2.1 Semicoductor materials ad their roerties 2.2 PN-juctio diodes 2.3 Reverse Breakdow 1 Semicoductor Physics Semicoductor devices serve as heart of microelectroics.
More informationCorrelation and Regression Analysis
Chapter V Correlato ad Regresso Aalss R. 5.. So far we have cosdered ol uvarate dstrbutos. Ma a tme, however, we come across problems whch volve two or more varables. Ths wll be the subject matter of the
More informationUniversity of California at Berkeley College of Engineering Dept. of Electrical Engineering and Computer Sciences.
Uversty of Clfor t Berkeley College of Egeerg et. of Electrcl Egeerg Comuter Sceces EE 5 Mterm I Srg 6 Prof. Mg C. u Feb. 3, 6 Gueles Close book otes. Oe-ge formto sheet llowe. There re some useful formuls
More informationQuiz 1- Linear Regression Analysis (Based on Lectures 1-14)
Quz - Lear Regreo Aaly (Baed o Lecture -4). I the mple lear regreo model y = β + βx + ε, wth Tme: Hour Ε ε = Ε ε = ( ) 3, ( ), =,,...,, the ubaed drect leat quare etmator ˆβ ad ˆβ of β ad β repectvely,
More informationUNIVERSITY OF OSLO DEPARTMENT OF ECONOMICS
UNIVERSITY OF OSLO DEPARTMENT OF ECONOMICS Postpoed exam: ECON430 Statstcs Date of exam: Jauary 0, 0 Tme for exam: 09:00 a.m. :00 oo The problem set covers 5 pages Resources allowed: All wrtte ad prted
More informationBuilt in Potential, V 0
9/5/7 Indan Insttute of Technology Jodhur, Year 7 nalog Electroncs (Course Code: EE34) Lecture 3 4: ode contd Course Instructor: hree Prakash Twar Emal: stwar@tj.ac.n Webage: htt://home.tj.ac.n/~stwar/
More information2. Independence and Bernoulli Trials
. Ideedece ad Beroull Trals Ideedece: Evets ad B are deedet f B B. - It s easy to show that, B deedet mles, B;, B are all deedet ars. For examle, ad so that B or B B B B B φ,.e., ad B are deedet evets.,
More informationEVALUATION OF PERFORMANCE MEASURES OF FMS Bottleneck Model. Part mix Mix of the various part or product styles produced by the system
Natoal Ittute of Techology Calcut Deartmet of Mechacal Egeerg EVALUATION OF PERFORMANCE MEASURES OF FMS Bottleeck Model Provde tartg etmate of FMS deg arameter uch a roducto rate ad umber of worktato Bottleeck
More informationTrignometric Inequations and Fuzzy Information Theory
Iteratoal Joural of Scetfc ad Iovatve Mathematcal Reearch (IJSIMR) Volume, Iue, Jauary - 0, PP 00-07 ISSN 7-07X (Prt) & ISSN 7- (Ole) www.arcjoural.org Trgometrc Iequato ad Fuzzy Iformato Theory P.K. Sharma,
More informationBasic Physics of Semiconductors
Chater 2 Basic Physics of Semicoductors 2.1 Semicoductor materials ad their roerties 2.2 PN-juctio diodes 2.3 Reverse Breakdow 1 Semicoductor Physics Semicoductor devices serve as heart of microelectroics.
More informationL5 Polynomial / Spline Curves
L5 Polyomal / Sple Curves Cotets Coc sectos Polyomal Curves Hermte Curves Bezer Curves B-Sples No-Uform Ratoal B-Sples (NURBS) Mapulato ad Represetato of Curves Types of Curve Equatos Implct: Descrbe a
More informationPGE 310: Formulation and Solution in Geosystems Engineering. Dr. Balhoff. Interpolation
PGE 30: Formulato ad Soluto Geosystems Egeerg Dr. Balhoff Iterpolato Numercal Methods wth MATLAB, Recktewald, Chapter 0 ad Numercal Methods for Egeers, Chapra ad Caale, 5 th Ed., Part Fve, Chapter 8 ad
More informationEuropean Journal of Mathematics and Computer Science Vol. 5 No. 2, 2018 ISSN
Europea Joural of Mathematc ad Computer Scece Vol. 5 o., 018 ISS 059-9951 APPLICATIO OF ASYMPTOTIC DISTRIBUTIO OF MA-HITEY STATISTIC TO DETERMIE THE DIFFERECE BETEE THE SYSTOLIC BLOOD PRESSURE OF ME AD
More informationMOSFET Internal Capacitances
ead MOSFET Iteral aactace S&S (5ed): Sec. 4.8, 4.9, 6.4, 6.6 S&S (6ed): Sec. 9., 9.., 9.3., 9.4-9.5 The curret-voltae relatoh we have dcued thu far for the MOSFET cature the ehavor at low ad oderate frequece.
More informationOverview of Silicon p-n Junctions
Overview of Silico - Juctios r. avid W. Graham West irgiia Uiversity Lae eartmet of omuter Sciece ad Electrical Egieerig 9 avid W. Graham 1 - Juctios (iodes) - Juctios (iodes) Fudametal semicoductor device
More informationLecture 3. Electron and Hole Transport in Semiconductors
Lecture 3 lectro ad Hole Trasort i Semicoductors I this lecture you will lear: How electros ad holes move i semicoductors Thermal motio of electros ad holes lectric curret via lectric curret via usio Semicoductor
More informationSemiconductors. PN junction. n- type
Semicoductors. PN juctio We have reviously looked at the electroic roerties of itrisic, - tye ad - time semicoductors. Now we will look at what haes to the electroic structure ad macroscoic characteristics
More informationEuropean Journal of Mathematics and Computer Science Vol. 5 No. 2, 2018 ISSN
Europea Joural of Mathematc ad Computer Scece Vol. 5 o., 018 ISS 059-9951 APPLICATIO OF ASYMPTOTIC DISTRIBUTIO OF MA-HITEY STATISTIC TO DETERMIE THE DIFFERECE BETEE THE SYSTOLIC BLOOD PRESSURE OF ME AD
More informationCSE 5526: Introduction to Neural Networks Linear Regression
CSE 556: Itroducto to Neural Netorks Lear Regresso Part II 1 Problem statemet Part II Problem statemet Part II 3 Lear regresso th oe varable Gve a set of N pars of data , appromate d by a lear fucto
More information10.2 Series. , we get. which is called an infinite series ( or just a series) and is denoted, for short, by the symbol. i i n
0. Sere I th ecto, we wll troduce ere tht wll be dcug for the ret of th chpter. Wht ere? If we dd ll term of equece, we get whch clled fte ere ( or jut ere) d deoted, for hort, by the ymbol or Doe t mke
More information3. Carriers. 3.1 Carriers in semiconductors. 3.2 Equilibrium Carriers. 3.3 Excess Carriers
3. Carrers v.18.aug 3.1 Carrers semcoductors tyes (electros, holes), roertes (charge, mass, m eergy, coducto) trsc / extrsc morty / majorty 3. qulbrum Carrers ad grahcal / aalytcal solutos mass acto law
More informationLecture 7. Large and Small Signal Modelling of PN Junction Diodes
ecture 7 are a Small Sal Moell of PN Jucto oes ths lecture you wll lear: Crcut moels of PN jucto oes Small sal moel of olear crcut elemets Small sal moels of PN jucto oes Jucto resstace a cataces Curret
More informationFig. 1: Streamline coordinates
1 Equatio of Motio i Streamlie Coordiate Ai A. Soi, MIT 2.25 Advaced Fluid Mechaic Euler equatio expree the relatiohip betwee the velocity ad the preure field i ivicid flow. Writte i term of treamlie coordiate,
More informationOn a Truncated Erlang Queuing System. with Bulk Arrivals, Balking and Reneging
Appled Mathematcal Scece Vol. 3 9 o. 3 3-3 O a Trucated Erlag Queug Sytem wth Bul Arrval Balg ad Reegg M. S. El-aoumy ad M. M. Imal Departmet of Stattc Faculty Of ommerce Al- Azhar Uverty. Grl Brach Egypt
More informationELECTRICAL PROPEORTIES OF SOLIDS
DO PHYSICS ONLINE ELECTRICAL PROPEORTIES OF SOLIDS ATOMIC STRUCTURE ucleus: rotos () & electros electros (-): electro cloud h h DE BROGLIE wave model of articles mv ELECTRONS IN ATOMS eergy levels i atoms
More informationCentroids & Moments of Inertia of Beam Sections
RCH 614 Note Set 8 S017ab Cetrods & Momets of erta of Beam Sectos Notato: b C d d d Fz h c Jo L O Q Q = ame for area = ame for a (base) wdth = desgato for chael secto = ame for cetrod = calculus smbol
More informationSCIENCE CHINA Technological Sciences. Theoretical study of piezotronic heterojunction
SCIENCE CHINA Techologcal Sceces November do: 10.1007/s11431-013-5358-3 013 Vol.56 No.11: 1 7 do: 10.1007/s11431-013-5358-3 Theoretcal study of ezotroc heterojucto FENG XaoLog 1 ZHANG Ya 1* & WANG ZhogL
More informationEP2200 Queueing theory and teletraffic systems. Queueing networks. Viktoria Fodor KTH EES/LCN KTH EES/LCN
EP2200 Queueg theory ad teletraffc systems Queueg etworks Vktora Fodor Ope ad closed queug etworks Queug etwork: etwork of queug systems E.g. data packets traversg the etwork from router to router Ope
More informationUniform magnetic susceptibilities
Uform magetc susceptbltes Typcal behavors ad measuremet techques SUSCPTIILIT UNIFORM & MAGNTOMTRIS page 1 - M ICFP- lectroc propertes of solds (Fabrce ert Varous behavors of M(H magetzato M Lear respose
More informationCS473-Algorithms I. Lecture 12b. Dynamic Tables. CS 473 Lecture X 1
CS473-Algorthm I Lecture b Dyamc Table CS 473 Lecture X Why Dyamc Table? I ome applcato: We do't kow how may object wll be tored a table. We may allocate pace for a table But, later we may fd out that
More informationLecture Notes #9: Class #11
Chem 40a Lecture Note #9: Cla # ecombiatio uder differet light iteity - Low level ijectio v High level ijectio We looed at recombiatio/geeratio : We uually wor away from the equilibrium. o we wat
More informationFor the following statements, mark ( ) for true statement and (X) for wrong statement and correct it.
Benha University Faculty of Engineering Shoubra Electrical Engineering Department First Year communications. Answer all the following questions Illustrate your answers with sketches when necessary. The
More informationREVIEW OF SIMPLE LINEAR REGRESSION SIMPLE LINEAR REGRESSION
REVIEW OF SIMPLE LINEAR REGRESSION SIMPLE LINEAR REGRESSION I liear regreio, we coider the frequecy ditributio of oe variable (Y) at each of everal level of a ecod variable (X). Y i kow a the depedet variable.
More informationb. There appears to be a positive relationship between X and Y; that is, as X increases, so does Y.
.46. a. The frst varable (X) s the frst umber the par ad s plotted o the horzotal axs, whle the secod varable (Y) s the secod umber the par ad s plotted o the vertcal axs. The scatterplot s show the fgure
More informationPower Flow S + Buses with either or both Generator Load S G1 S G2 S G3 S D3 S D1 S D4 S D5. S Dk. Injection S G1
ower Flow uses wth ether or both Geerator Load G G G D D 4 5 D4 D5 ecto G Net Comple ower ecto - D D ecto s egatve sg at load bus = _ G D mlarl Curret ecto = G _ D At each bus coservato of comple power
More informationSignal,autocorrelation -0.6
Sgal,autocorrelato Phase ose p/.9.3.7. -.5 5 5 5 Tme Sgal,autocorrelato Phase ose p/.5..7.3 -. -.5 5 5 5 Tme Sgal,autocorrelato. Phase ose p/.9.3.7. -.5 5 5 5 Tme Sgal,autocorrelato. Phase ose p/.8..6.
More informationLecture 7: Properties of Materials for Integrated Circuits Context
Lecture 7: Propertes of Materals for Itegrate Crcuts Cotext Over the last two weeks, we revewe: Basc passve compoets Capactors Resstors Iuctors Lear crcut moels Phasor otato Trasfer fuctos Boe plots 1
More information8 The independence problem
Noparam Stat 46/55 Jame Kwo 8 The depedece problem 8.. Example (Tua qualty) ## Hollader & Wolfe (973), p. 87f. ## Aemet of tua qualty. We compare the Huter L meaure of ## lghte to the average of coumer
More information{ }{ ( )} (, ) = ( ) ( ) ( ) Chapter 14 Exercises in Sampling Theory. Exercise 1 (Simple random sampling): Solution:
Chapter 4 Exercses Samplg Theory Exercse (Smple radom samplg: Let there be two correlated radom varables X ad A sample of sze s draw from a populato by smple radom samplg wthout replacemet The observed
More informationSilicon solar cell under electromagnetic wave in steady state: effect of the telecommunication source's power of radiation
IOP Coferece Seres: Materals Scece ad Egeerg Slco solar cell uder electromagetc wave steady state: effect of the telecommucato source's power of radato To cte ths artcle: I Zerbo et al 1 IOP Cof. Ser.:
More informationUNIT 2 SOLUTION OF ALGEBRAIC AND TRANSCENDENTAL EQUATIONS
Numercal Computg -I UNIT SOLUTION OF ALGEBRAIC AND TRANSCENDENTAL EQUATIONS Structure Page Nos..0 Itroducto 6. Objectves 7. Ital Approxmato to a Root 7. Bsecto Method 8.. Error Aalyss 9.4 Regula Fals Method
More informationSuppresion of Corona in Stator Winding of Synchronous Machines
Proceedgs of the 5th WSES t. Cof. o Power Systems ad Electromagetc Compatblty, Corfu, Greece, ugust 23-25, 25 (pp38-42) Suppreso of Coroa Stator Wdg of Sychroous Maches DNEL MYE Departmet of Theory of
More informationCOLLEGE OF ENGINEERING PUTRAJAYA CAMPUS FINAL EXAMINATION SEMESTER / 2014
OLLEGE OF ENGNEERNG PUTRAJAYA AMPUS FNAL EXAMNATON SEMESTER 013 / 014 PROGRAMME SUBJET ODE SUBJET : Bachelor of Electrcal & Electrocs Egeerg (Hoours) Bachelor of Electrcal Power Egeerg (Hoours) : EEEB73
More informationSpreadsheet Problem Solving
1550 1500 CO Emmssos for the US, 1989 000 Class meetg #6 Moday, Sept 14 th CO Emssos (MMT Carbo) y = 1.3x 41090.17 1450 1400 1350 1300 1989 1990 1991 199 1993 1994 1995 1996 1997 1998 1999 000 Year GEEN
More informationABSTRACT. Siddharth Potbhare Master of Science, 2005
ABSTRACT Ttle of Thess: CHARACTERIZATION OF 4H-SC MOSFETs USING FIRST PRINCIPLES COULOMB SCATTERING MOBILITY MODELING AND DEVICE SIMULATION Sddharth Potbhare Master of Scece 005 Thess drected by: Professor
More informationINTRODUCTION TO INERTIAL CONFINEMENT FUSION
INRODUCION O INERIAL CONFINEMEN FUSION R. Bett Lecture 1 Formula or hot pot temperature Reved dyamc model ad gto codto Etropy he ormula below wa derved Lecture 9. It repreet the maxmum value o the cetral
More informationComputational Geometry
Problem efto omputatoal eometry hapter 6 Pot Locato Preprocess a plaar map S. ve a query pot p, report the face of S cotag p. oal: O()-sze data structure that eables O(log ) query tme. pplcato: Whch state
More informationQuiz #3 Practice Problem Set
Name: Studet Number: ELEC 3908 Physical Electroics Quiz #3 Practice Problem Set? Miutes March 11, 2016 - No aids excet a o-rogrammable calculator - ll questios must be aswered - ll questios have equal
More information1. Linear second-order circuits
ear eco-orer crcut Sere R crcut Dyamc crcut cotag two capactor or two uctor or oe uctor a oe capactor are calle the eco orer crcut At frt we coer a pecal cla of the eco-orer crcut, amely a ere coecto of
More informationON THE MOTION OF PLANAR BARS SYSTEMS WITH CLEARANCES IN JOINTS
ON THE MOTION OF PLANAR BARS SYSTEMS WITH CLEARANCES IN JOINTS Şl uv dr g Ja-Crsta GRIGORE, Uverstatea d Pteşt, strtîrgu dvale Nr Prof uv dr g Ncolae PANDREA, Uverstatea d Pteşt, strtîrgu dvale Nr Cof
More informationOn the energy of complement of regular line graphs
MATCH Coucato Matheatcal ad Coputer Chetry MATCH Cou Math Coput Che 60 008) 47-434 ISSN 0340-653 O the eergy of copleet of regular le graph Fateeh Alaghpour a, Baha Ahad b a Uverty of Tehra, Tehra, Ira
More informationFunctions of Random Variables
Fuctos of Radom Varables Chapter Fve Fuctos of Radom Varables 5. Itroducto A geeral egeerg aalyss model s show Fg. 5.. The model output (respose) cotas the performaces of a system or product, such as weght,
More informationå 1 13 Practice Final Examination Solutions - = CS109 Dec 5, 2018
Chrs Pech Fal Practce CS09 Dec 5, 08 Practce Fal Examato Solutos. Aswer: 4/5 8/7. There are multle ways to obta ths aswer; here are two: The frst commo method s to sum over all ossbltes for the rak of
More informationSimple Linear Regression. How To Study Relation Between Two Quantitative Variables? Scatter Plot. Pearson s Sample Correlation.
Correlato & Regreo How To Study Relato Betwee Two Quattatve Varable? Smple Lear Regreo 6. A Smple Regreo Problem I there relato betwee umber of power boat the area ad umber of maatee klled? Year NPB( )
More informationProblem Set 3: Model Solutions
Ecoomc 73 Adaced Mcroecoomc Problem et 3: Model oluto. Coder a -bdder aucto wth aluato deedetly ad detcally dtrbuted accordg to F( ) o uort [,]. Let the hghet bdder ay the rce ( - k)b f + kb to the eller,
More informationChapter 6. pn-junction diode: I-V characteristics
Chatr 6. -jucto dod: -V charactrstcs Tocs: stady stat rsos of th jucto dod udr ald d.c. voltag. ucto udr bas qualtatv dscusso dal dod quato Dvatos from th dal dod Charg-cotrol aroach Prof. Yo-S M Elctroc
More informationState space systems analysis
State pace ytem aalyi Repreetatio of a ytem i tate-pace (tate-pace model of a ytem To itroduce the tate pace formalim let u tart with a eample i which the ytem i dicuio i a imple electrical circuit with
More informationC-1: Aerodynamics of Airfoils 1 C-2: Aerodynamics of Airfoils 2 C-3: Panel Methods C-4: Thin Airfoil Theory
ROAD MAP... AE301 Aerodyamcs I UNIT C: 2-D Arfols C-1: Aerodyamcs of Arfols 1 C-2: Aerodyamcs of Arfols 2 C-3: Pael Methods C-4: Th Arfol Theory AE301 Aerodyamcs I Ut C-3: Lst of Subects Problem Solutos?
More informationAvailable online at ScienceDirect. Energy Procedia 55 (2014 ) The recombination parameter J 0.
valable ole at www.scecedrect.com SceceDrect Eergy Proceda 55 (014 ) 53 6 4 Iteratoal Coferece o Slco Photovoltacs, SlcoPV 014 The recombato arameter 0 dres Cuevas* Research School of Egeerg, The ustrala
More informationSingular Value Decomposition. Linear Algebra (3) Singular Value Decomposition. SVD and Eigenvectors. Solving LEs with SVD
Sgular Value Decomosto Lear Algera (3) m Cootes Ay m x matrx wth m ca e decomosed as follows Dagoal matrx A UWV m x x Orthogoal colums U U I w1 0 0 w W M M 0 0 x Orthoormal (Pure rotato) VV V V L 0 L 0
More informationSTA 108 Applied Linear Models: Regression Analysis Spring Solution for Homework #1
STA 08 Appled Lear Models: Regresso Aalyss Sprg 0 Soluto for Homework #. Let Y the dollar cost per year, X the umber of vsts per year. The the mathematcal relato betwee X ad Y s: Y 300 + X. Ths s a fuctoal
More informationThe Selection Problem - Variable Size Decrease/Conquer (Practice with algorithm analysis)
We have covered: Selecto, Iserto, Mergesort, Bubblesort, Heapsort Next: Selecto the Qucksort The Selecto Problem - Varable Sze Decrease/Coquer (Practce wth algorthm aalyss) Cosder the problem of fdg the
More information