arxiv: v1 [cond-mat.str-el] 11 Jul 2017

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1 Dynamic electronic correlation effects in NbO as compared to VO W. H. Brito, 1, M. C. O. Auiar, 3 K. Haule, and G. Kotliar,1 1 Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973, USA. Department of Physics and Astronomy, Ruters University, Piscataway, New Jersey 8854, USA. 3 Departamento de Física, Universidade Federal de Minas Gerais, C. P. 7, , Belo Horionte, MG, Brail. arxiv: v1 [cond-mat.str-el] 11 Jul 17 In this work we present a comparative investiation of the electronic structures of NbO and VO obtained within the combination of density functional theory and cluster-dynamical mean field theory calculations. We investiate the role of dynamic electronic correlations on the electronic structure of the metallic and insulatin phases of NbO and VO, with focus on the mechanism responsible for the ap openin in the insulatin phases. For the rutile metallic phases of both oxides, we obtain that electronic correlations lead to stron renormaliation of the t subbands, as well as the emerence of incoherent Hubbard subbands, sinalin that electronic correlations are also important in the metallic phase of NbO. Interestinly, we find that nonlocal dynamic correlations do play a role in the ap formation of the (bct) insulatin phase of NbO, by a similar physical mechanism as that recently proposed by us in the case of the (M 1) dimeried phase of VO (Phys. Rev. Lett. 117, 564 (16)). Althouh the effect of nonlocal dynamic correlations in the ap openin of bct phase is less important than in the (M 1 and M ) monoclinic phases of VO, their presence indicates that the former is not a purely Peierls-type insulator, as it was recently proposed. I. INTRODUCTION Vanadium and niobium dioxides are rutile-based d 1 systems which undero simultaneous metal-insulator transition (MIT) and structural transition with dimeriation of transition metal atoms. The MIT in vanadium dioxide (VO ) occurs approximately at 34 K 1 and is accompanied by a transition from a hih-temperature rutile (R) phase, shown in Fi. 1, to a low-temperature M 1 or M monoclinic phase (see Fi. 1 and (c)). The MIT in niobium dioxide (NbO ) occurs at much hiher temperatures ( 181 K) 4 and is also accompanied by a structural transition, from a rutile to a body-centered tetraonal (bct) phase, displayed in Fi. 1(d). From the technoloical perspective, their ultrafast switchin under external stimuli is attractive to enineer new electronic devices. Indeed, both oxides have been considered promisin candidates to interate phase transition electronic devices, such as electronic switches and memristors, 5 7 where the NbO has the advantae of operatin over a broad rane of temperatures. Overall, the M 1 and bct structures have similar features. Ascanbe seenin Fi.1 and(d), in thesephases the pairs of transition metal atoms dimerie, and tilt with respect to the rutile c axis. Within a band structure picture, Goodenouh 8 proposedthatthesedistortionswould lead to the openin of a band ap between the electronic states associated with the overlappin d-orbitals alon the rutile c axis, namely a 1 states, and the remainin t states, i.e. the e states. Thus, within the Goodenouh model, the ap in M 1 and bct phases opens due to the lattice distortions. Meanwhile, the failure of density functional theory(dft) calculations to take into account the ap openin in the M 1 phase, 9,1 as well as the existence of localied d electrons in the ia-like chains of M phase, 11 suestthat electroniccorrelationsdo playa roleintheapformationofvo low-temperaturephases. In fact, accordin to recent theoretical calculations, 1 14 the ap appears in the M 1 phase due to the interplay between lattice distortions and electronic correlations, rulin out a purely Peierls-type transition. The calculations performed in Refs. 1 and 13 considered appropriate model Hamiltonians and indicated distinct physical mechanisms for the ap openin of the M 1 phase; on the other hand, in Ref. 14, by usin modern all electron embedded dynamical mean-field theory (DMFT) implementation, we obtained an unified picture for the ap formation in M 1 and M monoclinic phases. In particular, we showed that electrons in all phases of VO are in the near vicinity of a Mott transition, but with the Mott instability arrested in the dimeried phase. In NbO, the role of electronic correlations in the ap formation of bct phase, as well as in the electronic properties of its R phase, has not been addressed so far. Previous DFT calculations, within the local density approximation (LDA), have obtained too small band ap compared to experiment. 19, Moreover, O Hara et al. 1 have suested that the structural transition from the R to the bct phase is of second order type in contrast to experiment. They identified soft-mode instabilities in R phase associated with dimeriation of niobium atoms. Moreover, they proposed that the ap of bct phase appears solely due to the structural distortions and the electronic correlations play no role. Similar conclusion was reached by Eyert. 19 Therefore, in contrast to VO, previous theoretical works have suested that the MIT in NbO is a structurally-driven transition and that the bct phase is a Peierls-type insulator. In this work we address the role of electronic correlations on the ap formation of the insulatin phases of NbO and VO, as well as in the electronic structure of their respective metallic phases, focusin on a comparison

2 R M 1 ison between the nonlocal dynamic correlations in the insulatin phases are presented in subsection III B 3. Finally, in Sec. IV we summarie our findins. x y II. COMPUTATIONAL METHOD (c) (d) M bct Our electronic structure calculations were performed within a fully self-consistent combination of DFT and embedded DMFT. Within our implementation we do not construct any effective model and the electronic chare density is obtained self-consistently. As shown in our previous report, 14 the proper inclusion of liand states as well as the self-consistent evaluation of the chare density are of reat importance to capture the mechanism responsible for the ap openin in VO. In our real space implementation, the DMFT selfenery is expanded in terms of quasi-localied atomic orbitals ( r φ µ m ), iω (r,r ) = r φ µ m φµ m φµ m φµ m r, (1) mm,µµ FIG. 1. Crystal structures of rutile (R) (space roup P4 /mnm), monoclinic M 1 (space roup P 1/c), and (c) monoclinic M (space roup C/m) phases of VO. (d) Crystal structure of body-centeredtetraonal (bct) phase of NbO (space roup I4 1/a). Vanadium and niobium atoms are represented by black spheres while the oxyens by the orane ones. The local axis system used throuhout this work 1 is shown schematically in. between the two compounds; to address these issues, we use a combination of DFT and embedded cluster-dmft methods. 16 Our results indicate that for the rutile metallic phases the electronic correlations lead to stron renormaliationofthet subbandsandtheemerenceofincoherent Hubbard subbands in both oxides, sinalin that electronic correlations are also important in the metallic phase of NbO. Interestinly, we find the presence of siable intersite electronic correlations within the niobium dimers in the bct phase. Accordin to our findins, these nonlocal correlations do play a role in the ap formation of NbO insulatin phase, as found in the M 1 phase of VO. 14 Therefore, our results suest that the structural distortions are not solely responsible for the ap openin of the bct phase, rulin out a purely Peierls-type nature for this phase, as it has been proposed recently. 1 The paper is oranied as follows. In Sec. II we describe the computational method employed in our calculations. Our results for metallic (R) and fully dimeried (M 1 and bct) phases are presented in subsections IIIA and IIIB1, respectively. In subsection IIIB we show our results for the M phase of VO. A eneral compar- where m,m denote the atomic derees of freedom of an atom centered at µ. The sinle-site DMFT approximation is obtained by the truncation φ µ m φ µ m = δ µ,µ φ µ m φµ m, while the cluster-dmft keeps intersite terms φ µ m φ µ m within a iven cluster, which in our case are transition metal dimers. In particular, we employed the sinle-site DMFT for nondimeried atoms and the cluster-dmft for dimeried ones, such as V-V and Nb-Nb dimers in the low-temperature phases. After embeddin the self-enery in the lare Hilbert space with all valence states included, we solve the Dyson equation G iω (r,r ) = [(iω +µ+ V KS (r))δ(r r ) iω (r,r )] 1. () In our cluster-dmft treatment, we adopt the symmetric and antisymmetric combination of orbitals within each transition metal dimer. The associated bondin ( b,α ) and antibondin ( ab,α ) self-eneries can be expressed as a linear combination of the components in the site representation, i.e. in terms of a local ( 11 ) and intersite ( 1 ) components, and b,α = , (3) ab,α = 11 1, (4) where α = {a 1,e (1),e ()}. Finally, we mention that the DFT part of our calculations were carried out within Perdew-Burke-Ernehof eneralied radient approximation (PBE-GGA), 3 as implemented in WienK packae. 4 In our DMFT calculations, the quantum impurity problem was solved usin

3 3 Continuous time quantum Monte Carlo(CTQMC) calculations, 5 considerin the Coulomb interaction U = 6. ev and Hund s couplin J = 1. ev for all phases investiated. In our notation, the a 1 state corresponds to the σ-type d x y d x y overlap alon the c axis, while the e states correspondto the -type d d overlap concernin the d x and d y orbitals. The experimental latticestructuresofvo andnbo phasesaretakenfrom Refs. 6, 9, 34, and 7, respectively. III. RESULTS AND DISCUSSIONS A. Metallic phases We first investiate the R phase of both oxides within our realistic DFT+DMFT approximation. In Fi. we show the calculated DFT+DMFT based total, t, and e σ projected density of states of the rutile phase of both oxides, at temperatures close to their respective MITs. findins suest that the electronic dynamic correlations in NbO are still important. To investiate the strenth of correlations in both oxides, we evaluated the quasiparticle weiht Z α = [1 R α (ω)/ ω] 1 for each dynamical orbital α = {a 1,e (1),e ()}. For non-interactin systems, this quasiparticle weiht is equal to unity, while in a stronly correlated system, such as a Mott insulator, Z vanishes. Our calculated quasiparticle weihts for both oxides are presented in table I. TABLE I. Quasiparticle weihts (Z s) for each dynamical orbital α = {a 1,e (1),e ()} of rutile phases of VO and NbO. VO NbO Z a1.8.3 Z e (1) Z e ().4.57 Z av Total DOS (states/ev) 4 4 total a 1 e σ e (1) e () VO (R) NbO (R) Enery (ev) Projected DOS (states/ev) The obtained values of Z for each t state indicate that the metallic phase of VO is indeed more correlated than that of NbO. However, we stress that the Z values obtained for NbO confirm that correlations are also important in this system. In particular, we observe that the a 1 subband is the most correlated, followed by the e (1) ande ()subbands. ThesmallervaluesofZ obtainedfor VO reveal that electrons in this system are closer to the Mott transition than electrons in NbO, which is in accordance with the more delocalied nature of 4d orbitals of niobium in comparison with the 3d ones of vanadium atoms. FIG.. DFT+DMFT-based total (black dashed line) and projected density of states of R phases of VO and NbO, at T = 39 K and T = 113 K respectively. The projections to a 1, e (1), e (), and e σ states are shown in blue, red, reen, and brown lines, respectively. In comparison with DFT obtained density of states (not shown), we notice that the t states are renormalied due to dynamic correlations, with stroner renormaliation in VO. As can be seen in Fi., these correlations also lead to the emerence of lower and upper Hubbard bands in the spectra of both oxides. For VO, a lower Hubbard band (LHB) is found at -1.1 ev, in areement with experimental measurements 8 and DMFT calculations on the Hubbard model. 1 The upper Hubbard band (UHB), by its turn, is observed at around.5 ev. For NbO the LHB is found at -1.8 ev whereas the UHB at 3 ev. To date, there is not any experimental spectra reported on the R phase of NbO, which could be used for comparison with our findins. Overall, the LHBs come mainly from a 1 states, while the UHBs are mainly due to e states. Althouh the correlation effects are more pronounced in spectral properties of VO, our B. Insulatin phases 1. M 1 and bct phases Structurally, in the M 1 phase of VO as well as in the bct phase of NbO the transition metal atoms dimerie and tilt with respect to the rutile c axis, as shown in Fis. 1 and (d), respectively. These structural distortions, within a band-theory, lead to the splittin of the a 1 subband in bondin and antibondin states, while the e states are upshifted in comparison with its respective position in rutile. For the M 1 phase, previous DFT+DMFT calculations showed that the ap opens due to the interplay of structural distortions and electronic correlations. 1,13 However, their findins pointed out different mechanisms for the ap formation. In fact, in the work by Biermann et al. 1 it was found that non-local correlations, within the vanadium dimers, renormalie down the a 1 bondin-antibondin splittin, suestin that the M 1 phase should be a renormalied Peierls insulator. In contrast, Weber et al. 13 found that the ap formation is driven by an orbital-selective Mott instability of the a 1 electronic states, suestin that the M 1

4 4 should be a Mott-Peierls insulator. More recently, we showed 14 that the ap appears in the M 1 due to sinificant non-local correlations in the presence of stron intersite exchane within the vanadium dimers; this rules out the previous findins in favor of a Mott insulator in the presence of stron intersite superexchane within V- dimers. Enery (ev) Enery (ev) M 1 (VO ) 33 K. Γ Y C Z Γ A E Z Γ B D Z (NbO ) Projected DOS (states/ev) 1 a 1 bond a 1 abond e (1) e () bct 1 K 4. Γ X M Γ Z P N Z1 M X P FIG. 3. Spectral function and projected density of states of M 1 and bct phases at 33 and 1 K, respectively. The projections to a 1, e (1), and e () dimer states are shown in blue, red, and reen lines, respectively. The solid (dashed) blue line corresponds to the projection on the bondin (antibondin) a 1 dimer state. To compare the low temperature phases of VO and NbO, we show in Fi. 3 the calculated spectral function of M 1 and bct phases, with their associated t and e σ projected density of states. Within our DFT+DMFT approach, we obtained two insulatin phases with indirect aps of.55 and.73 ev, for M 1 and bct phases, respectively. As mentioned in Ref. 14, the ap obtained for M 1 is in ood areement with the experimental ap reported by Koethe et al. 8 (.6 ev) and cluster-dmft calculations on the Hubbard model. 1,13 In bct phase of NbO, weobtainedthe indirectapsieof.73ev,which is.49 ev hiher than DFT(GGA) band ap and is in ood areement with recent ellipsometric measurements reported by O Hara et al. (ap of.7 ev). It is worth mentionin, thouh, that our chare ap is underestimated in comparison with the ap of at least 1. ev obtained by Posadas et al. 38 throuh x-ray photoelectron spectroscopic measurements of NbO films. We notice also that, in both oxides, the e states are more coherent than the a 1 states, which suests that the latter is more correlated than the former. Further, the weak LHB associated with the a 1 antibondin state in M 1 phase of VO is not seen in bct phase. The a 1 bondin subbands present coherent peaks at around -.3 and -.7 ev in M 1 of VO and bct phases, respectively. The respective antibondin subbands are centered around.6 and 3.5 ev. This indicates that the bondin-antibondin splittin enery has an increase of 1.34 ev in M 1 phase and.74 ev in bct phase, in comparison with our DFT calculations. Next, in Fi. 4, we show the imainary part of the self-eneries associated with the a 1 dimer electronic states, for both M 1 (black) and bct (red) phases. Probability Im a 1 (ev) Enery (ev) N=1 N=1 M 1 (VO ) bct (NbO ) N= N= S = N=4 S = N=3 N=3 M 1 N= V dimer state Nb dimer state FIG. 4. Imainary part, on real frequency axis, of bondin (dashed lines) and antibondin (solid lines) self-eneries associated with the a 1 dimer electronic states of M 1 (black) and bct (red) phases. In and (c) we show the valence historams of vanadium and niobium dimers in M 1 and bct phases, respectively. In these fiures N denotes the number of electrons in distinct dimer states. Sinlet states (S = ) are indicated by blue arrows. From these self-eneries we notice a similar feature in both systems: the absence of poles in the imainary part of the self-eneries indicates that in bct phase, as in the M 1 phase, once the dimeriation occurs, the Mott instability is arrested. In particular, we notice that the position of the peaks associated with the a 1 antibondin states, which appear at -.58 ev (bct) and -1. ev (M 1 ), indicates that the electrons in M 1 phase are closer to a Mott transition than the ones in bct phase. This suests that the structural distortions are more important in the ap openin of bct phase than in the M 1 phase. In Fi. 4 and (c) we show the valence historams of vanadium and niobium dimers in M 1 and bct phases, respectively. These historams indicate that the sinlet states(blue arrows) associated with the V and Nb-dimers are the states with the hihest probabilities, with occupa- (c) bct

5 5 Enery (ev) Enery (ev) dimeried ia (c) abond 1.5 e (1) up M (AFM) 33 K e () dn. Γ. Y C Z Γ A E Z Γ B D Z e (1) 1.5 M (PM) 33 K e (). Γ Y C Z Γ A E Z Γ B D Z Projected DOS (states/ev) a 1 bond a 1 a Probability Probability N=1 N = 1 N= 5 1 V dimer states 1 S = S = 1/ S = 1/ N = N=3 N = V atomic states N=4 dimeried FIG. 5. DFT+DMFT spectral function and projected density of states of M phase at 33 K, considerin antiferromanetic and paramanetic states. In and, the projections to t states associated with dimeried and ia-like chains of V-atoms are shown in the central and riht panels, respectively. In respect to the dimeried atoms, projections to a 1, e (1), and e () molecular states are shown in blue, red, and reen, respectively. For the ia V-atoms, we use the same colors to each t state, with the contributions of the up and down(dn) spins shown in solid and dashed lines, respectively. In (c) and (d) we show the valence historams of the V-dimer and V states of dimeried and ia atoms, respectively. (d) PM AFM ia 4 tion probabilities of 3% and 35%, respectively, followed by impuritystates with 3 and1electrons(n = 3and 1in our historams). These findins suest that chare fluctuations are more important to the ap formation than spin fluctuations associated with the sinlet-triplet states of the dimers. In respect to this, we mention that recent inelastic X-ray scatterin measurements found that the sinlet-triplet spin excitation enery is.4 ev, 39 in disareement with the theoretical prediction of.13 ev obtained by quantum Monte Carlo calculations. 4 The fact that probability for the triplet state is relatively small in our calculation, suests that the sinlet-triplet splittin is comparable to the band ap, but the precise calculation of the many body enery level is beyond the scope of this work.. M phase Previous experimental works have shown that M phase of VO can be stabilied at ambient conditions by uniaxial stress alon the [11] R axis or by dopin with 3+ ions, such as Cr 3+, Al 3+, Fe 3+, or Ga ,3 As can be seen in Fi. 1(c), in this phase half of vanadium atoms dimerie, without tiltin, whereas the other half experience a ia-like distortion alon the c axis. Further, previous experiments reported the existence of localied d electrons in the ia vanadium chains. Pouet et al. 31 interpreted their findins usin a set of noninteractin independent spin-1/ Heisenber chains. Likewise, D Haenenset al. 3 deducedfromtheirfindinsanantiferromanetic exchane couplin J AF, on the ia chain, of the order of 4 K, at x =.45 in V 1 x Cr x O compounds. More recently, such antiferromanetic orderin has been observed in VO nanorods in the M phase. 33 As reported previously, 14 in our investiation of the M phase we considered paramanetic and antiferromanetic states concernin the ia V-atoms. From our calculated spectral functions, shown in Fi. 5 and, we observe that in both states the M phase presents a ap. In particular, we obtain aps of.58 and.61 ev for the antiferromanetic and paramanetic states, respectively. This indicates that the antiferromanetic orderin related to the d electrons in the ia-like chains plays a minor role in the ap formation of this phase. In both situations the ap opens between the a 1 and e subband, althouh the a 1 states from the ia chains provide a small contribution to the bottom of the conduction band (see central and riht panels of Fi. 5 and ). The a 1 bondin subband presents a coherent peak at -.34 ev (-.31 ev), whereas the antibondin subband is centered at.5 ev (.5 ev) for the paramanetic (antiferromanetic) state. The resultin bondin-antibondin splittin enery is 1 ev larer than obtained by DFT. Further, the a 1 states of ia atoms downshift and become less dispersive in the paramanetic phase, such

6 6 Im (ev) AFM 8 PM 3 1 dimeried b, a 1 ab, a 1 b, e (1) ab, e (1) a 1,dn a 1,up e (1),dn e (1),up Enery (ev) a 1 e (1) ia Enery (ev) AFM PM ia a 1 (up) a 1 (dn) e (1)(up) e (1)(dn) AFM Enery (ev) Re (ev) FIG. 6. Imainary part, on real frequency axis, of bondin and antibondin self-eneries of a 1 and e (1) states of V-dimers (on the left) and of a 1 and e states of ia vanadium atoms (on the riht). Real part of a 1 and e self-eneries of ia (unpaired) vanadium atoms in the antiferromanetic phase. as a Hubbard-like subband. The a 1 states of dimeried V-atoms do not shift. Hence, the low-enery excitations in the paramanetic phase are dominated by the a 1 states of the dimeried V-atoms, in contrast to the antiferromanetic phase wherein both vanadium chains contribute to the top of the valence band. We also observe a restoration of coherence of the occupied states close to the Fermi level when comparin the antiferromanetic with the paramanetic state, which indicates that antiferromanetic orderin suppresses the electronic correlations. In fact, in the valence historam shown in Fi. 5(c) and (d), we observe that the antiferromanetic orderin suppresses the spin fluctuations of the ia V-atoms, while it does not affect the occupation probabilities of states associated with the dimeried atoms. The historam shown in Fi. 5(c) indicates that the sinlet state associated with the V-dimers has the hihest probability (occupation probability of 33%), followedby stateswith N = 3, asfound forthe M 1 phase. To investiate the effects of electronic correlations in the M phase we show in Fi. 6 the imainary part of self-eneries related to the dimeried and ia V- atoms. In the paramanetic phase, we notice that the t states associated with the dimeried atoms do not present any pole in the imainary part of self-enery, as similarly found in M 1 phase. As pointed out in our previous work, 14 in the antiferromaneticphase we find that even the t states associated with the ia atoms do not present a Mott instability. In fact, the sinularity of the self-enery is arrested once the antiferromanetic ordered state is stabilied. Interestinly, as can be seen in Fi. 6, the real part of a 1 self-enery has a stron frequency dependence around the Fermi level, which indicatesthat the a 1 subband isrenormaliedbythis component. On the other hand, in the paramanetic phase (see Fi. 6), the imainary part of self-enery associated with a 1 states of ia V-atoms acquires a pole. As a result, the a 1 subband is splitted by a Mott instability, indicatin that this subband underoes the Mott- Hubbard transition. These findins suest that the M phase is best characteried as a Mott insulator. 3. Nonlocal dynamic correlations in M 1, M, and bct phases As observed in the previous sections, the inclusion of nonlocal dynamic correlations increases the a 1 bondinantibondin splittin enery in the low-temperature phases of VO and NbO. Within the transition metal dimers, treated as a cluster in our DMFT calculations, it is useful to look at the self-eneries in the site representation, where we have the local self-enery, local = 11, and the intersite self-enery, in = 1. In order to compare the effects of nonlocal dynamic correlations for the M 1, M, and bct phases, we show in Fi. 7 the real part of intersite a 1 a 1 and e (1) e (1) self-eneries for each insulatin phase. First, we notice that the frequency dependence of the intersite self-eneries associated with e (1) states is neliible for all the insulatin phases. In contrast, the intersite self-eneries associated with a 1 states depend stronly on frequency in the low-enery part. This indicates the presence of stron intersite correlations within the transition metal dimers. This stron frequency dependence of intersite self-enery was first noticed in the low-temperature phase of Ti O 3, 15 but a stron intersite Coulomb interaction was required for openin the ap. In the M 1 and M phases of VO the intersite components are almost the same, with minor difference in the iω limit, indicatin that in a 1 a 1 () is larer in M 1 phase. Interestinly, the intersite a 1 self-enery in bct phase is frequency dependent as well, but with smaller intensity than in the insulatin phases of VO, as noticeable when takin the iω limit. These results, within an

7 7 Re in (ev) 1 bct 1 3 iω M 1 M FIG. 7. Real part of intersite self-eneries, on imainary frequencyaxis, ofa 1 a 1 (solid lines) ande (1) e (1) (dashed lines) states of M 1 (indio), M (AFM) (orane), and bct (reen) phases. We considered T = 33 K for the monoclinic phases and T = 1 K in the case of bct phase. effective band structure picture (see supplemental material of Ref. 14), support the smaller increase of bondinantibondin splittin enery in bct phase in comparison with the monoclinic phases of VO. Therefore, our findins suest that the Mott physics is important in both oxides, with only somewhat stroner effects in VO. IV. SUMMARY In summary, we performed fully self-consistent allelectron DFT+DMFT calculations to investiate the role of dynamic electronic correlations on the electronic structure of the metallic and insulatin phases of NbO and VO, as well as the mechanism of the ap openin for the insulatin phases, focusin on a comparison between the two compounds. For the rutile phase of both oxides our results indicate that dynamic correlations lead to a renormaliation of t levels and the emerence of Hubbard bands associated with the a 1 (LHB) and e (UHB) states. In particular, we find that the correlation effects are more pronounced in the spectral properties of VO, althouh the calculated quasiparticle weihts Z s show that electronic dynamic correlations in the rutile phase of NbO are still important. The smaller values of Z obtained for VO reveal that electrons in this system are closer to the Mott transition than electrons in NbO, which is expected due to more delocalied nature of 4d orbitals of niobium in comparison with the 3d ones of vanadium atoms. In respect to the insulatin phases of both oxides, we find chare aps of.55 ev and.73 ev for the M 1 and bct phases, respectively, in areement with experiments. For the M phase, by its turn, we obtain chare aps of.58 ev, considerin an antiferromanetic state, and of.61 ev, for the paramanetic state. This indicates that antiferromanetic orderin plays a minor role in the ap formation of this phase. Overall, we observe that the bondin-antibondin splittin enery increases in the presence of nonlocal dynamic correlations, in comparison with our DFT calculations. Interestinly, we find that nonlocal dynamic correlations do play a role in the ap formation of the bct phase, by a similar physical mechanism as in the case of M 1 phase of VO which was proposed in Ref. 14. In particular, the nonlocal dynamic correlations in bct phase are less important for the ap openin than in M 1 and M phases of VO. It indicates that the bct phase of NbO is not a purely Peierls-type insulator, as it wasrecently proposed. 1 Accordin to our results, allphases ofvo and NbO arein the nearvicinity of a Mott transition, but with the Mott instability arrested in the dimeried and antiferromanetic phases. V. ACKNOWLEDGMENTS We acknowlede support from the Brailian aencies CNPq, CAPES, and FAPEMIG. K.H. and G.K. were supported by NSF DMR and NSF DMR , respectively. 1 F. J. Morin, Phys. Rev. Lett. 3, 34 (1959). R. F. Janninck, and D. H. Whitmore, J. Phys. Chem. Solids 7, 1183 (1966). 3 K. Seta, and K. Naito, J. Chem. Thermodynamics 14, 91 (198). 4 Y. Sakai, N. Tsuda, and T. Sakata, J. Phys. Soc. Jpn. 54, 1514 (1985). 5 Z. Yan, C. Ko, and S. Ramanathan, Annu. Rev. Mater. Res. 41, 337 (11). 6 M. D. Pickett and R. S. Williams, Nanotechnoloy 3, 15 (1). 7 M. D. Pickett, G. Medeiros-Ribeiro, and R. S. Williams, Nature Mater. 1, 114 (13). 8 J. B. Goodenouh Phys. Rev. 117, 144 (196). 9 R. M. Wentcovitch, W. W. Schul, P. B. Allen, Phys. Rev. Lett. 7, 3389 (1994). 1 V. Eyert, Ann. Phys. 11, 65 (). 11 J. P. Pouet, H. Launois, J. P. D Haenens, P. Merenda, and T. M. Rice, Phys. Rev. Lett 35, 873 (1975). 1 S. Biermann, A. Poteryaev, A. I. Lichtenstein, and A. Geores, Phys. Rev. Lett. 94, 644 (5). 13 C. Weber, D. D. O Rean, N. D. M. Hine, M. C. Payne, G. Kotliar, and P. B. Littlewood, Phys. Rev. Lett. 18, 564 (1). 14 W. H. Brito, M. C. O. Auiar, K. Haule, and G. Kotliar, Phys. Rev. Lett. 117, 564 (16). 15 A. I. Poteryaev, A. I. Lichtenstein, and G. Kotliar, Phys. Rev. Lett. 93, 8641 (4).

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