"%&$!"# 3 Power-Transistor
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1 "%&$!"# 3 Power-ransistor Features Q' 3 81>>5< >? B=1<<5F5< Q H3 5 <5>D71D5 3 81B75 HR 4E3 D ( & Q5BI <? G? > B5C9CD1>3 5 R 9H"[Z# D5=@5B1DEB5 Q)2 6B55 +? ", 3? =@<91>D Product Summary V 9H ( J R,? >=1H,& -&, Y" I 9 ( EC5>79>55B9>7 C1=@<5 3? 45C?EE(8C(C Q* E1< ? B49>7 D? $ )# 6? BD1B75D1@@<93 1D9? > Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 CI>3 8B? >? ECB53 D9693 1D9? > Q" 1<? 75> 6B ? B49>7 D? # ype #)) ' '! #)# ' '! #) ' '! Package E=%ID**(%+ E=%ID**%+ E=%ID*+%+ Marking (-/C(C (-/C(C (-,C(C Maximum ratings, 1D V E><5CC? D85BG9C5 C@ Parameter Symbol Conditions Value Unit? >D9>E? EC4B19>3 EBB5>D I 9 8 *# ( 6 8 ( )E<C54 4B19>3 EBB5>D *# I 9$\aX_Q 8 +*( F1<1>3 85 5>5B7I E 6H I 9 R =H " *)( Y@!1D5 C? EB3 5 F? <D175 V =H q*( J )? G5B49CC9@1D9? > P `[` 8 )-( K 1>4 CD? B175 D5=@5B1DEB5 V _`S # 3 <9=1D93 3 1D57? BI #' #
2 Parameter Symbol Conditions Values Unit min typ max hermal characteristics -85B=1<B5C9CD1>3 5 :E>3 D9? > 3 1C5 R `@8 % % ) A'K -85B=1<B5C9CD1>3 5 R `@6 =9>9=1<6?? D@B9>D :E>3 D9? > 1=2 95>D 3 = * 3?? <9>7 1B51 +# % %,( Electrical characteristics, 1D V E><5CC? D85BG9C5 C@ Static characteristics B19> C? EB3 5 2 B51;4? G>F? <D175 V "7G#9HH V =H I 9 = ( % % J!1D5 D8B5C8? <4 F? <D175 V =H"`# V 9H 4V =H I 9 V * *& +&- 5B? 71D5 F? <D175 4B19>3 EBB5>D I 9HH V 9H V =H V % (&) ) r6 V 9H V =H V % )( )((!1D5 C? EB3 5 <51;175 3 EBB5>D I =HH V =H V 9H % ) )(( Z6 B19> C? EB3 5? > CD1D5 B5C9CD1>3 5 R 9H"[Z# V =H I 9 %,&1 -&/ Y" V =H I 9 % &+ 1&1 B19> C? EB3 5? > CD1D5 B5C9CD1>3 5 R 9H"[Z# V =H I 9 "HB9# %,& -&, V =H I 9 "HB9# % &( 1&!1D5 B5C9CD1>3 5 R = % *&* % " I^MZ_O[ZPaO`MZOQ g R_ gv 9H g5*gi 9 gr 9H"[Z#YMd I 9 -* )(+ % H )# $,- 1>4 $, *#,55 697EB5 +# 5F93 5? > == H == H == 5@? HI ) + G9D8 3 = *? >5 <1I5B V = D893 ; 6? B4B19> 3? >>53 D9? > ) 9CF5BD93 1<9>CD9<19B
3 Parameter Symbol Conditions Values Unit min typ max Dynamic characteristics 9D1>3 5 C U % +-/(,/-( \< ( ED@ED3 1@13 9D1>3 5 C [ V =H V 9H f & " J % 1+ )*( + 5F5BC5 DB1>C65B3 1@13 9D1>3 5 C ^ % + -, -EB>? >45<1I D9=5 t P"[Z# % ) % Z_ + 9C5 D9=5 t ^ V 99 V =H % % -EB>? 6645<1I D9=5 t P"[RR# I 9 R = " % + % 1 <D9=5 t R % )( %!1D5 81BS5 81B13 D5B9CD93 C,#!1D5 D? C? EB B75 Q S_ % )1 *- Z8!1D5 D? 4B19>3 81B75 Q SP % )) ),G9D3 89>7 3 81B75 Q _c V 99 I 9 V =H D? % )1 */!1D5 3 81B75 D? D1< Q S % -* F? <D175 V \XM`QMa % -&* % J ( ED@ED3 81B75 Q [ V 99 V =H % /( 1+ Z8 Reverse Diode 9? 45 3? >D9>? EC6? BG1B4 3 EBB5>D I H % % ( 6 8 9? 3 EBB5>D I H$\aX_Q % % +*( 9? 45 6? BG1B4 F? <D175 V H9 V =H I < V % )&( )&* J + 5F5BC5 B53? F5BI D9=5 t ^^ V G I < 4I H % /* % Z_ + 5F5BC5 B53? F5BI 3 81B75 Q ^^ Pi < 'Pt V C % )+( % Z8,#,55 697EB5 6? B71D5 3 >
4 1 Power dissipation 2 Drain current P `[`4R" 8 # I 9 4R" 8 V =H " P tot [W] C [ C] C [ C] 3 Safe operating area 4 Max transient thermal impedance I 9 4R"V 9H 8 D 4( Z `@8 4R"t \ t D 4t \ ' <9=9D54 2 I? > CD1D5 ^Q_U_`MZOQ V C V C 1 2 V C 1 =C Z thjc [K/W] (&- (&* =C 1-1 (&) (&(- (&(* (&() V DS [V] t p [s]
5 5 yp output characteristics 6 yp drain-source on resistance I 9 4R"V 9H V R 9H"[Z# 4R"I 9 V V =H R DS(on) [m ] V DS [V] yp transfer characteristics 8 yp forward transconductance I 9 4R"V =H KV 9H g5*gi 9 gr 9H"[Z#YMd g R_ 4R"I 9 V g fs [S] V GS [V]
6 9 Drain-source on-state resistance 1 yp gate threshold voltage IPP57N8N3 G IPI57N8N3 G R 9H"[Z# 4R" V I 9 V =H V =H"`# 4R" V V =H 4V I V R DS(on) [m ] 6 `e\ V GS(th) [V] 2 V j [ C] j [ C] 11 yp capacitances 12 Forward characteristics of reverse diode C 4R"V 9H V =H f & " J I < 4R"V H9 V U 8[ C [pf] I F [A] 1 2 8^ V DS [V] V SD [V]
7 13 Avalanche characteristics 14 yp gate charge IPP57N8N3 G IPI57N8N3 G I 6H 4R"t 6J R =H " V =H 4R"Q SM`Q V I AV [A] 1 V GS [V] t AV [µs] Q gate [nc] 15 Drain-source breakdown voltage 16 Gate charge waveforms V 7G"9HH# 4R" V I 9 = 9 V =H 85 Q g 8 V BR(DSS) [V] 75 7 V S _"`# 65 Q S"`# Q _c Q gate j [ C] Q S_ Q SP
8 PG-O263-3 (D²-Pak)
9 PG-O262-3 (I²-Pak)
10 PG-O22-3
11 Published by Infineon echnologies AG Munich, Germany 27 Infineon echnologies AG All Rights Reserved Legal Disclaimer he information given in this document shall in no event be regarded as a guarantee of conditions or characteristics With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon echnologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon echnologies Office (wwwinfineoncom) Warnings Due to technical requirements, components may contain dangerous substances For information on the types in question, please contact the nearest Infineon echnologies Office Infineon echnologies components may be used in life-support devices or systems only with the express written approval of Infineon echnologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life If they fail, it is reasonable to assume that the health of the user or other persons may be endangered
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