The SuperFET: A High-Performance GaAs Voltage-Controlled Current Source for Cryogenic Applications

Transcription

1 The SuperFT: High-Perormace Gas Voltage-Cotrolled Curret Source or Cryogeic pplicatios.v.cami, G.Pessia,.Previtali ad P. Ramaioli*. ipartimeto di Fisica dell'uiversita' ad Istituto Nazioale di Fisica Nucleare, 0133 Milao, Italy. * presetly at: Silea Iteratioal, 0063 Milao, Italy OUTLIN: XPRIMNTL MOTIVTION N SPCIFICTIONS; CONSIRTIONS ON TH PRVIOUS SOLUTION; TCHNOLOGICL SPCT; SIGN SOLUTION OF TH NW TST VRSION; XPRIMNTL RSULTS; SUMMRY. Wolte3, Jue 4-6,

2 XPRIMNTL MOTIVTION N SPCIFICTIONS TH XPRIMNT IS LOCT T TH LRG HRON COLLIR T CRN, IN GNV. VRY HIGH NRGY BM OF PRTICL WITH NRGY IN TH TeV RGION WILL CROSS TH TCTOR HVING LIQUI RGON TNK S TH RVLING MIUM; WHIL CROSSING TH LIQUI, PRTICLS CRT IONIZTION INSI RGON; INCINT BM QUI. CIRCUIT -HV LIQUI RGON TOP VIW CURRNT SNSITIV PRMPLIFIR WILL R-OUT TH CURRNT GNRT BY TH LCTRONS. TH PPLICTION OF N LCTRIC FIL LLOWS TO COLLCT TH CRT CHRGS; TH SGMNTTION OF TH SPC INSI TH LIQUI LLOWS TO GT INFORMTION ON TH POSITION OF TH CRT CHRGS N IT SRVS LSO FOR TH OPTIMIZTION OF TH CHRG TRNSFR BTWN TH TCTOR N TH PRMPLIFIR; Wolte3, Jue 4-6, 1998

3 CONSIRTIONS ON TH PRVIOUS SOLUTION () TH TYPICL SIGNL SHP IS TRINGL OF BOUT 400s TIM LNGTH. TH MXIMUM NRGY IS XPCT TO CRTS CHRG GIVING RIS SIGNL CURRNT OF BOUT 8m. FIRST CURRNT SNSITIV PRMPLIFIR BL TO MT THS SPCS. HS BN RLIZ N TST. 8m 400s 3.5V TH PRMPLIFIR CONSIST IN Gas MSFT MONOLITHIC INTGRT CIRCUIT. 430Ω TH YNMIC OF TH PRMPLIFIR WS BOUT 3.5V, LIMIT BY TO TH BRKOWN OF TH MSFTs TRNSISTORS US. RLTIVLY SMLL FBCK RSISTNC WS THN US TO MNG TH LRG SIGNL XPCT. TH SMLL VLU OF TH FBCK RSISTNC LIMITS TH FINL NRGY RSOLUTION U TO ITS SSOCIT PRLLL NOIS, INVRSLY PROPORTIONL TO ITS VLU. Wolte3, Jue 4-6,

4 CONSIRTIONS ON TH PRVIOUS SOLUTION (B) TWO PRMPLIFIRS R CCOMMOT ON SINGL CHIP = ON COMPLT PRMPLIFIR TH PRMPLIFIR IS COMPOS OF ONLY - TYP MSFT TRNSISTORS. TH MSFT INPUT VIC HS N R OF L G x W = 3 x 4000 μm. Series Noise esity [V/Hz] 100 T = 87 K 10 1 LPM White Noise NM 0, Frequecy [Hz] RSULTS * SLW RT 160 V/μs SWING (WITH 100Ω LO) 3.5V POWR ISSIPTION 66 mw SRIS WHIT NOIS 0.3 V/ Hz 1/ NOIS COFFICINT 1-13 V ISPRSION OF TH CHRCTRISTIC (500 5 % SMPLS) * I TR. NUCL. SCI. VOL.43, p.1649 (1996) NIM VOL. 395, p.134 (19997) Wolte3, Jue 4-6,

5 TCHNOLOGICL SPCT THIS FIRST PRMPLIFIR USS ONLY TH -TYP MSFTs HVING TH LOWR NOIS IN TH MONOLITHIC PROCSS SLCT (TriQuit). OWING TO THIR OPING LVL, TH -TYP MSFTs, HV RLTIVLY LOW BRKOWN VOLTG WHICH HS LIMIT TH VOLTG XCURSION OF TH PRMPLIFIR. V BR BR ε = qn BR, 400kV/cm C RGION OF INTRST C RGION OF INTRST BUT TH PROCSS HS VILBL MOR TYP OF MSFTs, WITH IFFRNT OPING LVL, UP TO NOW NOT CONSIR FOR THIR LRG 1/ NOIS. TH -TYP, IN PRTICULR, IS TH ON HVING TH LOWR OPING PROFIL, WITH THRSHOL VOLTG SLIGHTLY POSITIV. W THN STRT TO US TH -TYP MSFT, LOCTING IT IN CIRCUIT POSITIONS WHR ITS NOIS IS NOT RFLCT T TH INPUT, BUT TH YNMIC VOLTG XCURSION IS XPCT TO B LRG. Type o FT M Temperature 300 K 77 K 4 K 300 K 77 K 4 K 300 K 77 K 4 K Threshold voltage [V] V Max. -S op. voltage [V] ~ ~ / actor H = C ift [10-6 Joule] /d 76 /d /d 10.8 /d 100 /d FROM BOV: N doors/cm 3 Wolte3, Jue 4-6,

6 SIGN SOLUTION OF TH NW PROTOTYP VRSION () TH FIRST STP WS TO RLIZ N HYBRI MSFT HVING TH NOIS OF -TYP N TH YNMIC PRFORMNCS OF TH -TYP. TH SIR WY IS TO RLIZ CSCO BTWN -TYP N N -TYP G TH -TYP H S VRY LRG 1/ NOIS N LSO POOR TRNSCONUCTNC (LRG WHIT NOIS) WHICH MY B RFLCT T TH INPUT OF TH STRUCTUR. S THINKS R IMPROV IF N INTRMIT STG IS INSRT BTWN TH INPUT -TYP MSFT N TH - TYP MSFT. THIS CN B M FOLLOWING TWO POSSIBILITIS: WITH M-TYP MSFT WHICH HS LRG TRNSCONUCTNC BUT LRG 1/ NOIS WITH -TYP MSFT WHICH HS LOWR TRNSCONUCTNC N LOW 1/ NOIS; G M S SOLUTIONS N HS BN IMPLMNT. RSULTS WILL B PRSNT ONLY FOR VRSION. G S Wolte3, Jue 4-6,

7 SIGN SOLUTION OF TH NW PROTOTYP VRSION (B) μm S SCON STG μm G M C μm M μm.5mm G S μm.5mm SCON INTICL CHNNL IS LOCT HR Wolte3, Jue 4-6,

8 XPRIMNTL RSULTS: C CHRCTRISTICS () V<Vgs<-.8V 0 mv step T=300K RIN V OFFST Ids [mp] = SMICONUCTOR NLYZR (HP414B) CONNCTIONS 15K Vds [Volt] V S 50 M 1.5 ΔVgs(STP)=10mV Vgs=- 0.65V T=77K V IS W=50000 Ids [m] GT GROUN Vds [Volt] Wolte3, Jue 4-6,

9 XPRIMNTL RSULTS: C CHRCTRISTICS (B) Ids [m] ΔVgs(STP)=10mV T=77K TRNSCONUCTNC 1m BIS CURRNT FOR TH -TYP INPUT MSFT; OUTPUT IMPNC 1MegΩ μ = g m R S 30000! Vds [Volt] Ids [mp] V<Vgs<-.5V 0 mv step T=4.K Vds [Volt] VN T 4.K TH BRKOWN OF TH SUPRFT IS STILL OF CONSIRBL VLU. Wolte3, Jue 4-6,

10 XPRIMNTL RSULTS: C CHRCTRISTICS (C) WHIL TH OUTPUT IMPNC N BRKOWN PN MINLY ON TH OUBL CSCO CTION, TH TRNSCONUCTNC OF TH SUPRFT PNS ON TH OPRTING CURRNT OF TH INPUT MSFT N CN B MOULT BY JUSTING ITS BISING CURRNT. Ids [mp] Ids [mp] Vgs [Volt] T=77K T=77K 10 m 5 m 0 m 3 m I = 5 m ΔI S =1.1m ΔV GS =15mV Vds [Volt] V IS V S I Q1 = 0m 3m 5m 10m 50 GT RIN M W=50000 GROUN 15K TRNSCONUCTNC RCH VLU OF TH ORR OF 5m OF RIN CURRNT FOR TH INPUT -TYP MSFT TRNSISTOR. V OFFST Wolte3, Jue 4-6,

11 XPRIMNTL RSULTS: C CHRCTRISTICS () TH INPUT GT CURRNT HS BN LSO STUI THNKS TO TH POSSIBILITY TO CHNG TH RIN VOLTG OF TH INPUT MSFT. V IS V S Sup V S = -V -1.5V -1V -0.5V 50 GT RIN FINL VRSION M W=50000 GROUN + - Sup 15K V OFFST Ids [mp] T=77K V - 1 V V - V Vgs [Volt] V GS OF TH M-TYP MSFT IS SLIGHTLY LRGR THN V. IF PRLLL NOIS HS TO B MINIMIZ, TH RIGHT RGION OF OPRTION IS BTWN 0.5V N 1V FOR TH V S OF TH INPUT -TYP MSFT. THIS WY TH INPUT GT CURRNT IS LSS THN 10. Wolte3, Jue 4-6,

12 XPRIMNTL RSULTS: YNMIC CHRCTRISTICS () VCC = CURRNT GNRTOR =OUTPUT BUFFR 500 1,.., 5 BOUT = FBCK NTWORK } Sup R V Sup - INPUT C R C Wolte3, Jue 4-6,

13 XPRIMNTL RSULTS: YNMIC CHRCTRISTICS (F) 4.7p Sup T=300K Vs=9.6V Isup=10m STP 150p 100 R = 100K C = 6.8p T=77K Vs=10V Isup=10m T=77K Vs=0.35V Isup=10m T=4.K Vs=10V Isup=10m Wolte3, Jue 4-6,

14 XPRIMNTL RSULTS: NOIS PRFORMNCS () TH MSURMNT SYSTM WS PUT INSI FRY CG. HP4195: SPCTRUM NLYZR 4.7p e Sup Cd 3600p GIN = 50 R = 10Meg C = 6.8p Pre gai 1 C C d Wolte3, Jue 4-6,

15 XPRIMNTL RSULTS: NOIS PRFORMNCS () SO FR TH SRIS NOIS S BN MSUR T 77K. V/ Hz 10 1 e = 0.1V/ = Hz V Vds=500mV Id=16m Simulated Noise V/ Hz 10 1 e = 0.1V/ T=77K 14 = Vds=1V Id=16m Simulated Noise Hz V 0.1 T=77K [MegHz] [MegHz] INTRPOLTING FORMUL: et = e + V/ Hz TH NOIS PRMTRS US IN TH INTRPOLTING FORMUL R NOT MTHMTICL FIT, BUT R XTRCT FROM NOTHR MSURMNT. Wolte3, Jue 4-6,

16 XPRIMNTL RSULTS: NOIS PRFORMNCS (B) GIN = 50 i 4.7p e Sup RC -CR τ Cd R = 10Meg C v o ROH SCHWRZ UR3: RMS VOLTMTR v OUTPUT VOLTG: o ( C + C C ) d i + = C e + + i ( ωc ) TRNSLT TO CHRG: i Q o = + ω ( C ) d + Ci + C e + Q FINLLY T TH VOLTMTR OUTPUT W GT TH INTGRT CHRG, WHICH, FTR CLIBRTION GIVS: RMS = NC = ( ) C + C + C α + β + γτ i τ d i e Wolte3, Jue 4-6,

17 XPRIMNTL RSULTS: NOIS PRFORMNCS (C) NC (el) NC (0s) NC (50s) NC (100s) NC (00s) Lieare (NC (100s)) Lieare (NC (00s)) Lieare (NC (50s)) Lieare (NC (0s)) Vds=0.5V Ids=16m y = 7.801x R = y = x R = y = x R = y = x R = Cd (pf) Slope^ Sl^ Liear (Sl^) y = x R = Vds=0.5V Ids=16m 1/tau (sec) NC = ( C ) d + Ci + C α + β + γτ i τ BY VRYING TH INPUT CPCITNC Cd STRIGHT LIN PROPORTIONL TO ONLY TH SRIS NOIS IS OBTIN. e SL = e α + β τ TH TRMS OF TH LINR FIT GIV TH VLU OF TH SRIS NOIS N TH 1/ NOIS TO B US IN TH SPCTRUM. FOR I S =16m N V S =0.5V W GT: e = 0.1V/ = Hz V Wolte3, Jue 4-6,

18 XPRIMNTL RSULTS: NOIS PRFORMNCS () NC (el) NC (0s) NC (50s) NC (100s) NC (00s) Lieare (NC (100s)) Lieare (NC (00s)) Lieare (NC (50s)) Lieare (NC (0s)) y = 7.801x R = Vds=1V Id=16m y = x R = y = 5.647x R = y = 4.776x R = Cd (pf) Slope^ SL^ Liear (SL^) y = x R = Vds=1V Id=16m 1/tau (sec) e = 0.1V/ = Hz V CONSIRTION: NC ( C + C + C ) d i e α + β τ FOR LRG Cd VLUS. BUT TH PRMPLIFIR S POL TO TH OVRLL TRNSFR FUNCTION GIVN BY: SOLUTION: NC IS PROPORTIONL TO C d + C, WHIL TH BNWITH OF TH PRMPLIFIR IS PROPORTIONL TO C OVR C d RTIO. CHNGING BOTH C N C d WITH TH SM RTIO VOIS TH PRMPLIFIR RROR IN TH TRNSFR FUNCTION * NIM Vol. 36, p.466 (1995) p am ω T C d C + C i + C * Wolte3, Jue 4-6,

19 SUMMRY LOW NOIS Gas MSFT, TH SUPRFT, BL TO WORK T CRYOGNIC TMPRTURS N BL TO SUSTIN LRG VOLTG SWING HS BN SIGN N RLIZ. TH MSFT R IS L G W= , TH SRIS WHIT NOIS IS BOUT 0.1V/ Hz, WHIL TH 1/ COMPONNT HS COFFICINT OF BOUT V. THNK TO TH US OF LOW OP MSFT IN CSCO WITH TH INPUT MSFT NW QUIVLNT VIC IS RLIZ, CPBL TO HV VOLTG SWING S LRG S 1V T 77K. FIRST MONOLITHIC TST STRUCTUR HS BN IMPLMNT ON MONOLITHIC CHIP, TO TST TH VIC. TH OMINNT POL MPLIFIR RLIZ HS PROV TH YNMIC POTNTILITY OF TH SUPRFT : SIGNL SWING OF 10V HS BN MSUR. NOIS CHRCTRISTIC HS BN LSO VRIFI BY MSURING TH NOIS OF TH SUPRFT WITH TH OMINNT POL MPLIFIR FBCK S CHRG SNSITIV PRMPLIFIR: INPUT NOIS IS FFCT IN NGLIGIBL WY BY TH SCON STG Wolte3, Jue 4-6,