arxiv: v1 [cond-mat.mes-hall] 22 Jan 2019

Transcription

1 agically strained bilayer graphene with flat bs a Luo The State Key Laboratory of Optoelectronic aterials Technologies School of Physics Sun at-sen University, Guangzhou, , P.R. China ariv: v1 [cond-mat.mes-hall] 22 Jan 2019 Twist bilayer graphenes with magical angle have nearly flat b, which become strongly correlated electron systems. Herein, we propose another system based on strained bilayer graphene that have flat b at the intrinsic Fermi level. The top bottom layers are uniaxially stretched along different directions. When the strength directions of the strain satisfy certain condition, the periodical lattices of the two layers are commensurate to each other. The regions with AA, AB BA stacking arrange in a triangular lattice. With magical strain, the bs around the intrinsic Fermi level are nearly flat have large gap from the other bs. This system could provide more feasible platform for graphene-based integrated electronic system with superconductivity. PACS numbers: , , , I. INTRODUCTION Narrow b strongly correlated electronic systems exhibit many exotic physical features, including superconductor, ott insulator spin liquid. The systems could be briefly described by Hubbard model, which is a tight binding model with hopping strength t onsite Coulomb interaction U. The systems with U/t > 5 could be consider to be strongly correlated. For realistic graphene, this ratio is U/t = 1.6 [1], so that graphene is not strongly correlated system. However, a twisted bilayer graphene [2 1] with magical twisting angle have isolated flat b[14 19] near to the intrinsic Fermi level. The effective tight binding model for the flat b [20 22] exhibit the feature of strongly correlated electronic system because U/t > 5. Recent experiments confirm that the phase diagram of the systems include superconductor ott insulator phase [2, 24], or topological nontrivial phase [25 28]. A lot of recent theoretical result have been devoted to explain the superconductivity other novel physics in this system [29 41]. We proposed that a bilayer graphene with magical strain could also have isolated flat b. The top bottom layers are uniaxially stretched along different directions. The strain could be induced by substrates or external pulling forces. We present the conditions to have commensurate lattice for the two layers. Under the suitable strain, the AA stacking region is arranged into the triangular lattice, which is similar to that for the twisted bilayer graphene. The b structure under magical strain are calculated. Previoius studies of strained bilayer graphenes only have partially flat bs [42, 4]. Recent theoretical studies show that the partially flat bs in the graphene with periodical strain could host superconductivity [44]. Because our system have nearly completely flat b, the superconductivity could be more easily induced. Corresponding author:luom28@mail.sysu.edu.cn The article is organized as following: In section II, the lattice structure of the magically strained bilayer graphene is presence. In section III, the b structure given by the tight binding model is presented. In section IV, the conclusion is given. II. THE LATTICE STRUCTURE The lattice structure of a single layer graphene is defined by the primitive translation vectors of the primitive unit cell, which are a 1 = a cˆx a 2 = 2 a cˆx+ 2 a cŷ, with a c = nm being the bond length. The zigzag edge of the graphene is along x axis. The locations of the A sublattice are r A (n,m) = na 1 +ma 2, the locations of the B sublattice are r B (n,m) = na 1 +ma a cˆx+ 1 2 a cŷ, with n m being integers. Under uniaxial strain along direction ˆT = cos(θ)ˆx + sin(θ)ŷ with strength ε, the location of each lattice site is transferred into r θ,ǫ A(B) = (I+ǫ) r A(B), where I is a two-by-two unit matrix ǫ is the strain tensor. The strain tensor is given as [45] ǫ = ε [ cos 2 θ σsin 2 ] θ (1+σ)cosθsinθ (1+σ)cosθsinθ sin 2 θ σcos 2 θ (1) where σ = is the Poissons ratio of graphene. After the strain, the primitive translation vectors are transferred into a θ,ǫ 1(2) = (I + ǫ) a 1(2). In consequence, the first Brillouin zone becomes distorted hexagon. If the strength of the strain satisfies ε < 0.2, the b structure remains gapless. The K K Dirac points with linearbtouchingmoveawayfromthekk points of the first Brillouin zone. With ε = 0.2, the K K Dirac points merge. With ε > 0.2, bulk b gap opens [45]. The magical strained bilayer graphene is consisted of an AA stacking bilayer graphene, whose top bottom layers are strained with the same strength but along θ θ direction, respectively. We designate the primi-

2 The condition that the superlattice is commensurate with the lattice of top bottom layer is q being integer. As a result, the angle of the strain direction should satisfies the condition 2 θ = 1 2 tan 1 N θ (4), where N θ is a non-negative integer, the strength of the strain is given as FIG. 1: (a) The lattice structure of the bilayer graphene with strain parameter N θ = 0, q = 2 p = 1. The lattice sites bonds of the top bottom graphene layers are plotted as blue red, respectively. (b) The reciprocal lattice vectors Brillouin zone of unstrained graphene(black), top strained graphene layer(blue) bottom strained graphene layer(red). The rectangular grid is the Brillouin zones of the superlattice. The circle square points are the K K Dirac points with linear b touching for the corresponding single layer graphene, respectively. (c) The lattice structure of the bilayer graphene with strain parameter N θ = 0, q = 10 p = 1. tive translation vectors of the top layer as a θ,ǫ 1(2) := at 1(2) those of the bottom layer as a θ,ǫ 1(2) := ab 1(2). In addition, we define another translation vectors as a T(B) 1 = a T(B) 2 a T(B) 1. The translation vectors of the superlattice is given by the linear combination of the primitive translation vectors of the top layer as a R 1 = qa T 1 +(q +p)at 2 a R 2 = q a T 1 +(q +p)a T 2 (2), where q p are positive integer. The conditions that the supperlattice is rectangular lattice are a R 1 ˆx = 0 a R 2 ŷ = 0, which gives the condition q = q +p p cos2θ sin2θ. The same translation vectors of the superlattice should be given by the similar linear combination of the primitive translation vectors of the bottom layer as a R 1 = (q +p)a B 1 +qab 2 a R 2 = ( q p)a B 1 +q a B 2 () p ε = pcos 2 θ (p+2q)(1+σ)cosθsinθ pσsin 2 θ (5) The ratio between the length of the two translation vectors is a R 2 / a R 1 =. An example of such bilayer graphene with N θ = 0, q = 2 p = 1 is plotted in Fig. 1(a). The reciprocal lattice vectors the first Brillouin zone of the top bottom graphene layers are plotted in Fig. 1(b). The first Brillouin zone of the two graphene layers are distorted in opposite way. The Dirac points with linear b touching of the two layers (in the absence of the inter-layer coupling) are related by the symmetric operation y y. The effect of the inter-layer coupling between two states with the same k x opposite k y from the two layers might be weak. The b structure of the bilayer graphene is the mix of two Dirac cone with linear dispersion with weak mixing strength, so that flat dispersion along ŷ direction could appears. Another example of such bilayer graphene with N θ = 0, q = 10 p = 1 is plotted in Fig. 1(c). The regions with AA, AB BA stacking are clearly identified. The AA stacking regions locate at the four corners the middle of the unit cell of the superlattice. All AA stacking regions are arranged in a triangular lattice. However, the lattice structures of the AA1 stacking region the AA2 stacking region are a little different, so that the whole system is not strict triangular lattice of AA stacking regions as that in twist bilayer graphene. The AB BA stacking regions also arrange in the triangular lattice. Both type of stacking regions also have two subtypes, designated as AB1(BA1) AB2(BA2). In this article, we focus on the superlattice defined in this section with N θ {1 20}, q { 2} p = 1. The b structures of a few cases with optimal figure of merit are plotted discussed in the next section. any other type of superlattice could be constructed by varying p orthe form ofeq. (2) (). The supercells could containmorethantwoaastackingregionstoomany lattice sites in the supercell, which makes the numerical simulation infeasible. As an example, another superlattice with triangular lattice symmetric is presented in the Appendix. III. THE BAND STRUCTURE The b structure of the magically strained bilayer graphene in the superlattice can be calculated by tight

3 200 (a) (b) FIG. 2: B structure of the magically strained bilayer graphene with Nθ = 6, q = 18 p = 1. (6) binding model. The Hamiltonian is given as ti,j c i cj + c.c. H= hi,ji ( ), where ci is the annihilation (creation) operator of the electron at the i-th lattice cite, ti,j is the hopping parameter between the i-th j-th lattice cites. The summation index cover the pairs of lattice cites hi, ji, whose distance between each other is smaller than 5ac. The detail expression of ti,j could be found in multiple references [10, 12, 15, 17], which includes the intra-layer inter-layer hopping parameter. Applying the Bloch boundary condition of the superlattice, the b structure of the rectangular lattice could be calculated. We found that two types of isolated narrow b exist under certain straining parameters. For the first type of b structure, eight bs around the intrinsic Fermi level are sticked together, which have finite b gap from the higher lower bs. For the second type of b structure, two bs below the intrinsic Fermi level are nearly flat, which have finite b gap from the higher lower bs. We define the figure of merit for the narrow bs as = c(v) c v ), Egap min(egap Ew (7) where Egap is the gap from the conduction(valence) b, Ew is the b width of the narrow bs. The magically strained bilayer graphene with the first type of isolated narrow bs exist for the straining parameter Nθ {4 8}. The optimal figure of merit is , for the systems with Nθ = 6 q = 18. The b structure is plotted in Fig. 2. The b width of the eight bs around the intrinsic Fermi level is 85.6 mev, the gaps from the higher lower bs are 9.7 mev 8.0 mev, respectively. The strength of the strain is ε = The magically strained bilayer graphene with the second type of isolated narrow bs exist for the straining -500 FIG. : B structure of the magically strained bilayer graphene with Nθ = 18, q = 22 p = 1. (a) (b) are the same b structure, except that the y-scale in (b) is zoomed in around the flat b below the intrinsic Fermi level. parameter Nθ > 9. For larger Nθ, the figure of merit could be higher, but the strength of the strain is also larger. For realistic materials, we are only interested in the systems with strain smaller than 0.. With this constrain, the optimal system have straining parameters as Nθ = 18 q = 22, whose figure of merit is 108. The b structure is plotted in Fig.. The b width of the two bs below the intrinsic Fermi level is 0.6 mev, the gaps from the higher lower bs are mev 8.6 mev, respectively. The strength of the strain is ε = The result shows that the third fourth bs below the intrinsic Fermi level are also nearly flat. Inspection of the wave functions of the flat bs show that the electrons in these states are localized at the AA stacking regions. This feature is similar to that of twist bilayer graphene with magical angle [46]. The systems with hole doping could induce flat b conducting physics, so that the exotic physical systems with strongly correlated features could appear. IV. CONCLUSION In conclusion, by stretching the top bottom layer of a bilayer graphene with the same strength of strain

4 4 along different directions, oiré pattern of AA stacking regions could be generated. The AA stacking regions are arranged in a triangular lattice, but the lattice structure of the regions at two sublattices are slightly different. With magical straining parameter, the bs below the intrinsic Fermi level become ultra-flat. The quantum states in these ultra-flat bs are highly localized at the AA stacking regions. a Tri 2 = rsr2 q 2 a 2. Thus, the supercell of the combined bilayer form a triangular superlattice. An example with V. APPENDI The variant of Eq. (2) () could construct different types of superlattice. Herein, we present an example that the superlattice is triangular lattice. Assuming that the translation vectors of the supercell have the same direction as the primitive translation vectors of the unstrained graphene, the relation between the translation vectors of the supercell the primitive translation vectors of the unit cell of the top strained graphene single layer is given as qa T 1 +at 2 = r 1a 1 a T 1 +qat 2 = r 2 a 2 (8), where q is integer, r 1 r 2 are real number. In order to satisfy this condition, the angle strength of the strain is given as θ = ± 1 q 2 [tan 1 ( )+π] (9) 2 ε = 2 4+q 2 (10) Inserting the straining parameter into Eq. (8), the length of the translation vectors of the supercell is given as r 1 = r 2 = (q +2)(1+q 2 )(σ +1) (q 2)(1+q 2 )(σ +1) (11) (12) Because r 1 r 2, the superlattice of the top strained graphene single layer does not form triangular lattice. The bottom graphene single layer is strained along θ direction with the same strength, so that the translation vectors of the supercell is obtained by exchanging r 1 r 2. Defining r s = lcm(q +2,q 2) as the least common multiple of q + 2 q 2, the translation vectors of the supercell of the combined bilayer of the top bottom strained graphene are given as a Tri 1 = rsr1 q+2 a 1 FIG. 4: The lattice structure of the magically strained bilayer graphene with triangular lattice. q = 18 is shown in Fig. 4. The strength of the strain is The supercells of the top bottom single layer are plotted as blue green dash lines, respectively. The supercell of the combined bilayer is plotted as black dash line. Because r s = lcm(16,20) = 80, r s /16 = 5 r s /20 = 4, the supercell of the bilayer system is consisted of the repeats of the supercell of each single layer graphene along a 1 a 2 for four or five times. Along a 1 or a 2 direction, the number of AA stacking regions within the supercell of the bilayer system is n AA = 2qr s /(q 2 4), so that there are (n AA ) 2 regions with AA stacking within one supercell. All of these AA stacking regions are arranged in triangular lattice but have different lattice structure. For this example, there are lattice site in one supercell, so that the diagonalization of the tight binding Hamiltonian is time consuming. If q is larger, the difference among the lattice structure of all AA stacking regions become small. Thus, the whole system is near to a triangular lattice of AA stacking regions. Acknowledgments The project is supported by the National Natural Science Foundation of China (Grant: ). References

5 5 [1]. Schuler,. Rosner, T. O. Wehling, A. I. Lichtenstein,. I. Katsnelson, Phys. Rev. Lett. 111, 06601(201). [2] J.. B. Lopes dos Santos, N.. R. Peres, A. H. Castro Neto, Phys. Rev. Lett. 99, (2007). [] E. J. ele, Phys. Rev. B 81, (R)(2010). [4] S. Shallcross, S. Sharma, W. Lgraf, O. Pankratov, Phys. Rev. B 8, 15402(2011). [5] E. J. ele, Phys. Rev. B 84, 2549(2011). [6] J.. B. Lopes dos Santos, N.. R. Peres, A. H. Castro Neto, Phys. Rev. B 86, (2012). [7] Guy Trambly de Laissardière, Omid Faizy Namarvar, Didier ayou, Laurence agaud, Phys. Rev. B 9, 2515(2016). [8] ingjian Wen, Stephen Carr, Shiang Fang, Efthimios Kaxiras, Ellad B. Tadmor, Phys. Rev. B 98, 25404(2018). [9] Aline Ramires Jose L. Lado, Phys. Rev. Lett. 121, (2018). [10] Adriana Vela,. V. O. outinho, F. J. Culchac, P. Venezuela, Rodrigo B. Capaz, Phys. Rev. B 98, 15515(2018). [11] oung Woo Choi Hyoung Joon Choi, Phys. Rev. B 98, (R)(2018). [12] Jian Kang Oskar Vafek, Phys. Rev. 8, 01088(2018). [1] Felix ndurain, Phys. Rev. B 99, 04542(2019). [14] E. Suárez orell, J. D. Correa, P. Vargas,. Pacheco, Z. Barticevic, Phys. Rev. B 82, (R)(2010). [15] Pilkyung oon ikito Koshino, Phys. Rev. B 87, (201). [16] Hirofumi Nishi, u-ichiro atsushita, Atsushi Oshiyama, Phys. Rev. B 95, (2017). [17] Nguyen N. T. Nam ikito Koshino, Phys. Rev. B 96, 07511(2017). [18]. Angeli, D. elli, A. Valli, A. Amaricci,. Capone, E. Tosatti,. Fabrizio, Phys. Rev. B 98, 2517(2018). [19] it H. Naik anish Jain, Phys. Rev. Lett. 121, (2018). [20] Jörn W. F. Venderbos Rafael. Fernes, Phys. Rev. B 98, 24510(2018). [21] ikito Koshino, Noah F. Q. uan, Takashi Koretsune, asayuki Ochi, Kazuhiko Kuroki, Liang Fu, Phys. Rev. 8, 01087(2018). [22] Noah F. Q. uan Liang Fu, Phys. Rev. B 98, 04510(2018) [2] uan Cao, Valla Fatemi, Shiang Fang, Kenji Watanabe, Takashi Taniguchi, Efthimios Kaxiras Pablo Jarillo- Herrero, Nature, 556, 4C50(2018). [24] uan Cao, Valla Fatemi, Ahmet Demir, Shiang Fang, Spencer L. Tomarken, Jason. Luo, Javier D. Sanchez-amagishi, Kenji Watanabe, Takashi Taniguchi, Efthimios Kaxiras, Ray C. Ashoori Pablo Jarillo- Herrero, Nature, 556, 80C84(2018). [25] Eric. Spanton, Alexer A. Zibrov, Haoxin Zhou, Takashi Taniguchi, Kenji Watanabe, ichael P. Zaletel, Andrea F. oung, Science, 60, 62C66(2018) [26] S. S. Sunku, G.. Ni, B.. Jiang, H. oo, A. Sternbach, A. S. cleod, T. Stauber, L. iong, T. Taniguchi, K. Watanabe, P. Kim,.. Fogler, D. N. Basov, Science, 62, 115C1156(2018). [27] Jia-Bin Qiao, Long-Jing in, Lin He, Phys. Rev. B 98, 25402(2018). [28] Shengqiang Huang, Kyounghwan Kim, Dmitry K. Efimkin, Timothy Lovorn, Takashi Taniguchi, Kenji Watanabe, Allan H. acdonald, Emanuel Tutuc, Brian J. LeRoy, Phys. Rev. Lett. 121, 07702(2018). [29] Cheng-Cheng Liu, Li-Da Zhang, Wei-Qiang Chen, Fan ang, Phys. Rev. Lett. 121, (2018). [0] ury Sherkunov Joseph J. Betouras, Phys. Rev. B 98, (2018). [1] Louk Rademaker Paula ellado, Phys. Rev. B 98, 25158(2018). [2] u-ping Lin Rahul. Nkishore, Phys. Rev. B 98, (2018). [] Teemu J. Peltonen, Risto Ojajärvi, Tero T. Heikkilä, Phys. Rev. B 98, (R)(2018). [4] Hoi Chun Po, Liujun Zou, Ashvin Vishwanath, T. Senthil, Phys. Rev. 8, 01089(2018). [5] ing Su Shi-Zeng Lin, Phys. Rev. B 98, (2018). [6] Dante. Kennes, Johannes Lischner, Christoph Karrasch, Phys. Rev. B 98, (R)(2018). [7] Fengcheng Wu, A. H. acdonald, Ivar artin, Phys. Rev. Lett. 121, (2018). [8] Cenke u Leon Balents, Phys. Rev. Lett. 121, (2018). [9] Hiroki Isobe, Noah F.Q. uan, Liang Fu, Phys. Rev. 8, (2018). [40] J. González T. Stauber, Phys. Rev. Lett. 122, (2019). [41] Kasra Hejazi, Chunxiao Liu, Hassan Shapourian, iao Chen, Leon Balents, Phys. Rev. B 99, 05111(2019). [42] Seon-yeong Choi, Seung-Hoon Jhi oung-woo Son, Nano Lett., 10, 486C489(2010). [4]. Van der Donck, C. De Beule, B. Partoens, F.. Peeters B. Van Duppen, 2D ater.,, 05015(2016). [44] Feng u, Po-Hao Chou, Chung-Hou Chung, Ting-Kuo Lee, Chung-u ou, Phys. Rev. B 98, 20510(2018). [45] Vitor. Pereira, A. H. Castro Neto, N.. R. Peres, Phys. Rev. B 80, (2009). [46] G. Trambly de Laissardière, D. ayou, L. agaud, Nano Lett., 10(), 804C808(2010).