arxiv: v1 [cond-mat.mes-hall] 5 Jul 2018

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1 Spin-Orit Protection of Induced Superconductivity in Mjorn Nnowires rxiv:87.94v [cond-mt.mes-hll] 5 Jul 28 Jouri D.S. Bommer, Ho Zhng, Önder Gül, Bs Nijholt, Michel Wimmer, Filipp N. Rykov 2, Julien Grud 3, Donjn Rodic 4, Egor Bev 2, Mtthis Troyer 4,5, Din Cr 6, Séstien R. Plissrd 6, Erik P.A.M. Bkkers,6, Kenji Wtne 7, Tkshi Tniguchi 7, Leo P. Kouwenhoven,8, QuTech nd Kvli Institute of Nnoscience, Delft University of Technology, 26 GA Delft, The Netherlnds 2 Deprtment of Physics, KTH-Royl Institute of Technology, SE-69 Stockholm, Sweden 3 Lortoire de Mthémtiques et Physique Théorique CNRS/UMR 735, Institut Denis Poisson FR2964, Université de Tours, Prc de Grndmont, 372 Tours, Frnce 4 Institut für Theoretische Physik, ETH Zürich, 893 Zürich, Switzerlnd 5 Microsoft Quntum, Redmond, WA 9852, USA 6 Deprtment of Applied Physics, Eindhoven University of Technology, 56 MB Eindhoven, The Netherlnds 7 Advnced Mterils Lortory, Ntionl Institute for Mterils Science, - Nmiki, Tsuku, 35-44, Jpn 8 Microsoft Sttion Q Delft, 26 GA Delft, The Netherlnds Spin-orit interction (SOI), reltivistic effect linking the motion of n electron (orit) with its mgnetic moment (spin), is n essentil ingredient for vrious relistions of topologicl superconductivity, which host Mjorn zero-modes, the uilding locks of topologicl quntum computtion. The prime pltform for topologicl quntum computtion is sed on semiconductor nnowire coupled to conventionl superconductor, the Mjorn nnowire, in which SOI plys key role y protecting the superconducting energy gp. Despite significnt progress towrds topologicl quntum computtion, direct oservtion of SOI in Mjorn nnowires hs een chllenging. Here, we oserve SOI in n InS nnowire coupled to NTiN superconductor. The mgnetic field resilience of our superconductor llows us to trck the evolution of the induced superconducting gp in lrge rnge of mgnetic field strengths nd orienttions, clerly reveling the presence of SOI. Numericl clcultions of our devices confirm our conclusions nd indicte SOI strength of evå, sufficient to crete Mjorn zero-modes. We find tht the direction of the spin-orit field is strongly ffected y the geometry of the superconductor nd cn e tuned y electrosttic gting. Our study provides n importnt guideline to optimise Mjorn circuits. When semiconductor nnowire is coupled to superconductor, the proximity effect opens superconducting energy gp in the density of sttes of the nnowire,2. In generl, mgnetic field suppresses superconductivity y closing the superconducting gp due to Zeemn These uthors contriuted eqully to this work Correspondence to H.Z. (h.zhng-3@tudelft.nl) Present ddress: Deprtment of Physics, Hrvrd University, Cmridge, MA 238, USA Present ddress: CNRS-Lortoire d Anlyse et d Architecture des Systèmes (LAAS), Université de Toulouse, 7 venue du colonel Roche, F-34 Toulouse, Frnce nd oritl effects 3. If the nnowire hs strong SOI, suppression of the superconducting gp is countercted nd sufficiently lrge Zeemn energy drives the system into topologicl superconducting phse, with Mjorn zeromodes loclised t the wire ends,2,4,5. The min experimentl effort in the lst few yers hs focused on detecting these Mjorn zero-modes s zero-is pek in the tunnelling conductnce 6 2. However, SOI, the mechnism providing the topologicl protection, hs een chllenging to detect directly in Mjorn nnowires. A direct oservtion of SOI in Mjorn nnowires is crucil for the design of future topologicl circuits 5,3 6, since the SOI strength sets the Mjorn loclistion length nd the size of the topologicl gp, ltogether determining the strength of topologicl protection 7,8. SOI is reltivistic effect tht results from electrons moving in n electric field (E) experiencing mgnetic field (B SO ) in their moving reference frme tht couples to the electron s spin. The electric field in our system minly results from structurl inversion symmetry of the confinement potentil (Rsh SOI), which depends on the work function difference t the interfce etween the nnowire nd the superconductor nd on voltges pplied to nery electrosttic gtes The Rsh SOI in InS nnowires hs een investigted extensively y mesuring spin-orit relted quntum effects: level repulsion of quntum dot levels 23, nd of Andreev sttes 24, wek nti-loclistion in long diffusive wires 25, nd helicl liquid signture in short qusi-llistic wires 26. However, the effect tht SOI hs on protecting the superconducting gp from closing, key mechnism responsile for creting Mjorn zero-modes, hs not een demonstrted. Here, we revel SOI in n InS nnowire coupled to NTiN superconductor through the dependence of the superconducting gp on the mgnetic field, oth strength nd orienttion. We find tht the geometry of the superconductor on the nnowire strongly modifies the direction of the spin-orit field, which is further tunele y electrosttic gting, in line with the expected modifictions of the electric field due to work function difference nd electrosttic screening t the nnowiresuperconductor interfce.

2 2 Results Device chrcteristion. Figure shows the device imge. An InS nnowire (lue) is covered y NTi/NTiN superconducting contct (purple) nd Cr/Au norml metl contct (yellow). The rrier gte underneth the uncovered wire (red) cn deplete the nnowire, loclly creting tunnel rrier. The tunnelling differentil conductnce (di/dv ) resolves the induced superconducting gp, y sweeping the is voltge (V ) cross the tunnel rrier, s shown in Fig.. The dshed rrow indictes the induced gp of.65 mev. In this device we hve recently shown llistic trnsport 27 nd Mjorn signtures 9. Spin-orit protection of superconductivity. The mgnetic field (B) dependence of the induced gp, with B long three different directions, is shown in Fig. e. The coordinte system is illustrted in Fig. c. The x-xis is long the nnowire, prllel to the electron momentum (k). The z-xis is perpendiculr to the sustrte nd coincides with the electric field (E) direction due to the sptil symmetry of the device nd the ottom gte. Since the Rsh spin-orit field (B SO E k) is perpendiculr to oth k nd E, it points long the y- xis. When B is ligned with x or z (left nd right pnel in Fig. e), oth perpendiculr to B SO, the gp closes slowly (t round.6 T), followed y the emergence of zero-is pek possily chrcteristic of Mjorn zero-mode when B is long the nnowire, lthough we emphsise tht conjecture of Mjorns is not essentil for the purposes of our present study. On the contrry, when B is ligned with the y-xis (middle pnel), prllel to B SO, the gp closes much fster (t round.25 T). Figure f shows the line cuts t B =.25 T long the three xes: for B B SO, the gp is lmost the sme s when B = T, while the gp is closed for B B SO. This oservtion mtches the predictions of the Mjorn nnowire model, s illustrted in Fig. d: when B B SO, SOI countercts the Zeemn-induced gp closing y rotting the spin eigenstte towrds B SO, which reduces the component of the Zeemn field long the direction of the spin eigenstte. In contrst, when B B SO, the spin eigenstte is lwys prllel to B, which prevents spin-orit protection nd results in fst gp closing 28,29. This pronounced nisotropy of the gp closing with respect to different B-directions is universlly oserved in ll our devices for ll gte settings (see Supplementry Fig. ), which is direct consequence of SOI in Mjorn nnowires. Before we discuss the SOI in more detil, we rule out lterntive mechnisms for the nisotropy which cn originte in the ulk superconductor, or the InS nnowire. First, n nisotropic mgnetic field-induced closing of the ulk superconducting gp is excluded for the fields we pply, which re fr elow the criticl field of NTiN (> 9 T) 3. We note tht this is different from luminium films 8,,3,32, where smll mgnetic field (<.3 T) perpendiculr to the film completely suppresses superconductivity, mking them unsuitle to revel SOI from n nisotropic gp closing. Next, we consider Meissner screening currents in NTiN tht cn cuse devitions in the mgnetic field in the nnowire. Our Ginzurg- Lndu simultions show tht the field corrections due to Meissner screening re negligile (Supplementry Fig. 2), since the dimensions of the NTiN film re comprle to the penetrtion depth. The simultions lso show tht vortex formtion is most fvourle long the z-xis (Supplementry Fig. 2), which implies tht the oserved nisotropic gp closing is not cused y gp suppression due to vortices ner the nnowire 33, since we do not oserve the fstest gp closing long z (Fig. f). Finlly, in the InS nnowire, the Zeemn g-fctor cn ecome nisotropic due to quntum confinement 23,34,35. However, our nnowire geometry leds to confinement in oth the y nd z direction, implying similr gp closing long y nd z, inconsistent with our oservtions (Fig. e). Hving excluded the ove mechnisms, we re now left with three effects: spin-splitting of the electron sttes in mgnetic fields with the Lndé g-fctor (Zeemn effect), the oritl effect of the mgnetic field representing the Lorentz force cting on trvelling electrons, nd SOI. To investigte the role of these effects, we use theoreticl three-dimensionl Mjorn nnowire model defined y the Hmiltonin 3 : ( ) p 2 H = µ + V (y, z) τ 2m z + α σ (Ê p)τ z + 2 gµ BB σ + τ x Here, the first term represents the kinetic nd potentil energy, with µ the chemicl potentil mesured from the middle of the helicl gp nd V (y, z) = V G R [, y, z] Ê is the electrosttic potentil in the wire, whose mgnitude is prmeterised y V G, with Ê the direction of the electric field nd R the wire rdius. The oritl effect enters the Hmiltonin vi the vector potentil A in the cnonicl momentum: p = i + ea. Here, e is the electron chrge, is Plnk s constnt, m =.5m e is the effective mss with m e the electron mss. The second term represents Rsh SOI chrcterised y SOI strength α, which we set to.2 evå to find qulittive greement with the mesurements. The third term is the Zeemn term, with n isotropic g-fctor 36 set to 5 nd µ B is the Bohr mgneton. The lst term ccounts for the superconducting proximity effect, which we implement in the wek coupling pproximtion 3, in which the piring gp = in the nnowire, which is tunnel coupled to superconductor with > providing n induced gp of.45 mev t B = T. The Puli mtrices τ nd σ ct in the prticle-hole nd spin spce respectively. We perform numericl simultions of this Hmiltonin on 3D lttice in relistic nnowire geometry using the Kwnt code 37. Additionl detils re provided in the Methods. We identify which effects explin the oserved nisotropic gp closing ehviour y including them seprtely in our simultions. Figure 2 shows the

3 3 mgnetic field dependence of the gp without SOI (setting α = in the Hmiltonin). In contrst to Fig. e the gp closes round.3 T for ll three directions, reflecting the dominnt contriution of the Zeemn effect. In Fig. 2, we turn on the SOI, nd turn off the oritl effect y setting the mgnetic vector potentil A =, which qulittively reproduces the nisotropic ehviour etween the y-xis nd the x nd z-xes. We hve explored other comintions of prmeters nd find tht the experimentl results of Fig. e cn only e reproduced y including SOI. We note tht dding the oritl effect in Fig. 2c shifts the gp closing to field lmost twice s smll for B y, which explins why we oserve gp closing for B y t t round.25 T, fr elow.45 T, the criticl field expected when only the Zeemn effect with g = 5 suppresses the gp. By fitting the curvture of the gp closing long x, s shown y white dshed line in Fig. e, we estimte SOI strength α of.5.35 evå in our devices (see Methods for detils), corresponding to spin-orit energy E SO = m α 2 /2 2 of 2 2 µev. This SOI strength is in greement with the vlues extrcted from level repulsion of Andreev sttes in n dditionl device (Supplementry Fig. 3). In contrst to systems tht do not include superconductor, the confinement potentil in Mjorn nnowires is predominntly set y the work function difference t the nnowire-superconductor interfce nd is less gte-tunele due to electrosttic screening y the grounded superconductor Recently, the level repulsion of Andreev sttes in InS nnowires covered with epitxil luminium hs shown SOI strength of pproximtely. evå 24, slightly lower thn we find for NTiN covered nnowires, which my result from strong coupling to the luminium superconductor, leding to stronger renormlistion of the InS mteril prmeters 7,2 22,38,39. Orienttion of spin-orit field. To resolve the direction of the spin-orit field, we fix the B-mplitude nd continuously rotte the B-direction, prmeterised y the ngle Θ in the zy-plne, s shown in the inset of Fig. 3. Figure 3 shows the dependence of the gp on Θ, where we djust the electric field strength in the nnowire with voltge V SG on the super gte underneth the superconductor (green in Fig. ). We define the ngle t which the gp is hrdest s Θ mx nd find Θ mx = (z-xis) for ll V SG nd in multiple devices (Fig. 3 nd Supplementry Fig. 4). This is illustrted in Fig. 3c, which shows horizontl line cuts for sugp is. The lrgest gp for given B-mplitude is expected for B B SO, indicting tht B SO y, in greement with the E-field direction dictted y the device geometry. Now, we check whether the oritl effect chnges Θ mx. The simultions in Fig. 3 show the effect of mgnetic field rottion on the gp with B SO y, confirming tht Θ mx is indeed lwys given y the direction perpendiculr to B SO, i.e. Θ mx =. Compring the top pnel (without the oritl effect) with the middle pnel (with the oritl effect), we conclude tht the oritl effect does not ffect Θ mx. This conclusion lso holds when we vry the potentil difference V G etween the middle nd outer of the wire (corresponding to V SG ) in the middle pnel nd ottom pnel. We note tht t V G = 2 mev (ottom pnel) the wve function is moved towrds the ottom of the nnowire, which increses strength of the oritl effect y reking the reflection symmetry out the z-xis, s evidenced y the longer ngle rnge over which the gp is closed compred to V G = 4 mev (middle pnel). Experimentlly, we lso oserve this in Fig. 3, with line cuts in Fig. 3d, where the gp is closed over significntly longer ngle rnge with incresing V SG. We note tht we use smll vlues of V G in the simultions, ecuse we expect wek gte response due to effective electrosttic screening y the superconductor, which covers five of the six nnowire fcets 27. Finlly, we turn to second type of device in which the superconducting film only prtilly covers the nnowire fcets (Fig. 4). This prtil superconductor coverge cn modify the orienttion of B SO y chnging the ssocited electric field direction 9, s sketched in the inset of Fig. 4. The electric field in the wire hs two min origins. The first one origintes from the work function difference etween the superconductor nd nnowire, which leds to chrge redistriution. The resulting electric field is expected to rotte wy from the z-xis due to the prtil superconductor coverge which reks the sptil symmetry. In Fig. 4 we rotte B in the zy-plne, perpendiculr to the nnowire xis, nd find tht Θ mx is indeed no longer t zero, ut t 32. The second contriution to the electric field rises from the pplied V SG nd the electrosttic screening due to the grounded superconductor. Chnging V SG should therefore rotte the electric field for prtil coverge. Indeed, we find tht Θ mx shifts y y djusting V SG y 7.5 V (Fig. 4c). Supplementry Fig. 5 shows the field rottion t intermedite V SG. The chnge of Θ mx is lso evident in the nisotropy of the gp closing in mgnetic field sweeps (Supplementry Fig. 6). Our theory simultions confirm tht Θ mx is still given y the direction orthogonl to B SO when the electric field is not necessrily long sptil symmetry xis of the prtilly covered device (Fig. 4d,e). While the oritl effect does not chnge Θ mx (Fig. 4e,f), it does induce symmetry in the energy spectrum round Θ mx when the electric field is not long the mirror plne of the device (Fig. 4 nd Fig. 4e). Clerly, the oritl effect hs significnt effect on the superconducting gp in our devices. Interestingly, the oritl effect ws found to e of minor importnce in epitxil Al-InS nnowires, possily ecuse of stronger confinement of the wvefunction close to the superconductor, leding to smller effective re for flux penetrtion. Future reserch should e directed towrds optimizing the wvefunction confinement ner the superconductor. This optimiztion should im t decresing the oritl effect which suppresses the topologi-

4 4 cl gp 3, nd t incresing the inversion symmetry to induce strong SOI, while preventing too strong nnowiresuperconductor coupling which reduces the g-fctor nd SOI strength due to renormlistion 7,2 22,38,39. In conclusion, the oserved gp closing nisotropy for different mgnetic field orienttions demonstrtes SOI in our Mjorn nnowires, necessry condition to crete Mjorn zero-modes. Our experiments revel tht SOI is strongly ffected y the work function difference t the nnowire-superconductor interfce nd the geometry of the superconductor, while electrosttic gting provides tuneility of SOI. Methods Nnowire growth nd device friction. The InS nnowires used here were grown using Au-ctlysed vpourliquid-solid mechnism in metl orgnic vpour phse epitxy rector, resulting in zinc lende nnowires grown long the [] crystl orienttion, which re free of stcking fults nd disloctions 4. Locl gtes, covered y h-bn dielectric flke, were fricted on silicon sustrte. The nnowires were individully plced over the gtes using micromnipultor 4. The contcts re fricted y exposing the chip to mild oxygen plsm clening fter resist development, followed y immersion in sturted mmonium polysulphide solution diluted y wter to :2 rtio for 3 minutes t 6 C 42. For the norml contcts, the wires re exposed to 3 seconds of in-situ helium ion milling, efore evporting nm Cr nd nm Au. The NTiN contcts re fricted y exposing the nnowire to 5 seconds or Ar plsm etching t 25 W, followed y sputtering of 5 nm NTi nd 85 nm NTiN 27,43. Mesurement detils. The mesurements were performed in dilution refrigertor t n electron temperture of 5 mk using three-xis vector mgnet nd stndrd lockin techniques. Detils of the tight inding simultions. The Hmiltonin defined in the min text is discretised on lttice of relistic nnowire geometry with dimeter of 7 nm nd length of 2 µm using lttice spcing of nm. The nnowire is covered y 35 nm thick superconducting shell covering 3/8 of the circumference of the wire, posititioned on top of the wire (Fig. 2, 3) or rotted from the top to the side y 45 (Fig. 4). Trnsport clcultions re performed y connecting the nnowire to semiinfinite norml leds, seprted y tunnel rrier on one side. The norml leds provide rodening of the peks in the simultions 44,45. The potentil in the wire is given y V (y, z) = V G R (z cos(φ) + y sin(φ)), where V G is the potentil difference etween the middle nd outer points of the wire, R is the rdius of the nnowire, nd Φ prmetrises the direction of the electric field Ê, which is set to Φ = in ll simultions, except for Fig. 4d, where Φ = 45. The vector potentil A = [B y(z z ) B z(y y ),, B x(y y )] T is chosen such tht it does not depend on x nd the offsets x, y, z re chosen such tht the vector potentil verges to zero inside the superconductor, implying totl supercurrent of zero in the superconductor. This choice is supported y the negligile screening currents we oserve in our Ginzurg- Lndu simultions (Supplementry Fig. 2). A is implemented in the tight-inding model y Peierls sustitution in the hopping mplitudes 46. Detils of the Ginzurg-Lndu simultions. To clculte the stry fields in the nnowire due to Meissner screening nd vortex entry in the superconducting contct (Supplementry Fig. 2), we hve performed simultions on the Ginzurg- Lndu model 47 in relistic three-dimensionl geometry using the dimensions of device A. We used penetrtion depth λ = 29 nm nd Ginzurg-Lndu prmeter κ = λ/ξ = 5, in line with the vlues expected for our NTiN film 48, which hs room temperture resistivity of 95 µωcm nd criticl temperture of 5 K. The Ginzurg-Lndu functionl is discretised oth inside the superconducting contct s well s in its surrounding spce 49 using second-order finite difference scheme t mximum internode distnce of.λ. The resulting energy functionl is minimised using the nonliner conjugte grdient method nd the code is implemented on NVidi CUDA rchitecture with high prllelistion. We otin the energy of sttes with vortices t finite mgnetic fields y first introducing rtificil perturtions ner the smple oundry, followed y energy minimistion to find the locl minimum corresponding to specific numer of vortices. The optiml numer of vortices t certin mgnetic field is then determined y finding the stte with the lowest energy glolly. We note tht non-optiml mounts of vortices cn e metstle due to significnt Ben-Livingston rriers for vortex entry, so the ctul numer of vortices is hysteretic nd depends on the dynmics of the mgnetic field. Determintion of SOI strength α from gp closing. In Mjorn nnowire the SOI strength α determines the shpe of the gp closing long B-directions perpendiculr to the spin-orit field B 5 SO (see Supplementry Fig. 7). To find n nlyticl expression for the dependence of the gp closing on α, we strt from the conventionl one-dimensionl Mjorn nnowire Hmiltonin,2, in which the gp size is given y the lowest energy eigenstte: ( (B) = min ɛ 2 + ɛ 2 SO + ɛ 2 Z + () 2 ) () ± 2 ɛ 2 (ɛ 2SO + ɛ2z ) + 2 ɛ2z ()2 Here, ɛ = 2 k 2 /2m µ represents the kinetic energy, with k the electron wve vector nd m =.5m e the effective mss. ɛ SO = αk is the SOI term with α the SOI strength. ɛ Z = gµbb is the Zeemn energy, with g the Lndé g-fctor 2 nd µ B the Bohr mgneton. () is the induced superconducting gp t B = T, which we mesure in the experiments (s indicted in Fig. ). For B B SO (y-xis) nd neglecting the oritl effect the gp closes linerly with the Zeemn energy due to tilting of the nds 28,29 : (B) = () gµbb (2) 2 The oritl effect significntly enhnces the gp closing in our devices (cf. Fig.,2), with strong dependence on the potentil difference V G in the three-dimensionl model. Although the vlue of V G in our devices is unknown, we find tht the oritl effect cn e effectively tken into ccount in the one-dimensionl model y djusting the g-fctor to

5 5 mtch the gp closing long B SO, where SOI disppers nd only the Zeemn nd oritl effect contriute to the gp closing. The vlidity of this pproximtion is demonstrted in Supplementry Fig. 7, where the colour mp shows the gp closing resulting from our numericl clcultions on the threedimensionl tight-inding model (tking the oritl effect into ccount nd using g = 5) nd the dshed white lines show the gp given y eqution () for B x nd y eqution (2) for B y using g = 65. To extrct α from our mesurements, we fit the model given y eqution () nd (2) to the mesured gp closing oth long the wire nd B SO simultneously. We prevent overfitting y independently constrining the free prmeters. First, g is determined y the gp closing long B SO, which only depends on the Zeemn effect. Then, µ follows from the criticl field B C long x, where 2 gµbbc = () 2 + µ 2,2 (note tht B C does not depend on α). The SOI strength α is now the only free prmeter left to fit the curvture of the gp closing long x. This procedure is pplied to four devices (see Fig. f, Supplementry Fig.,c, nd Supplementry Fig. 6), resulting in SOI strength of.5.35 evå. The remining fit prmeters found for device A (Fig. e) re g = 9, µ =.4 mev. The vlues of g nd µ found for the rest of the devices re given in the Supplementry Informtion. Estimtion of SOI strength sed on level repulsion. SOI induces coupling etween sttes of different momentum nd spin in finite length Mjorn nnowires, which leds to level repulsion when energy levels re nerly degenerte 5. Recently this level repulsion etween longitudinl sttes within the sme sund ws used to estimte SOI strength in epitxil Al-InS nnowires 24. Here, we follow the sme procedure to estimte the SOI strength in seperte device with NTiN superconductor tht exhiits such level repulsion. We consider low energy model of two levels dispersing in the mgnetic field due to the Zeemn effect, coupled to ech other y SOI with the mtrix element δ SO: H = [ ] E + gµbb δso 2 δ SO E gµbb 2 We fit the eigenenergies of H to our experimentl dt (Supplementry Fig. 3) to extrct δ SO. The precise vlue of the coupling prmeter δ SO depends not only on α, ut lso on the detils of the confinement nd on the coupling strength to the superconductor 24. A rough estimte, with resonle greement to numericl simultions, ws proposed to e: 2δ SO = απ/l, where L is the length of the wire. The extrcted δ SO is shown in Supplementry Fig. 3 for vrious vlues of the super-gte voltge V SG. As V SG ecomes more negtive, we see n increse in δ SO, consistent with n incresing electric field in the nnowire. We cn estimte α.4.55 evå. 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6 6 22 Mikkelsen, A., Kotetes, P., Krogstrup, P. & Flenserg, K. Hyridiztion t superconductor-semiconductor interfces. Preprint t (28). 23 Ndj-Perge, S. et l. Spectroscopy of spin-orit quntum its in indium ntimonide nnowires. Phys. Rev. Lett. 8, 668 (22). 24 De Moor, M. W. A. et l. Electric field tunle superconductor-semiconductor coupling in Mjorn nnowires. Preprint t (28). 25 Vn Weperen, I. et l. Spin-orit interction in InS nnowires. Phys. Rev. B 9 (25). 26 Kmmhuer, J. et l. Conductnce through helicl stte in n indium ntimonide nnowire. Nt. Commun. 8, 478 (27). 27 Zhng, H. et l. Bllistic superconductivity in semiconductor nnowires. Nt. Commun. 8, 625 (27). 28 Osc, J., Ruiz, D. & Serr, L. Effects of tilting the mgnetic field in one-dimensionl Mjorn nnowires. Phys. Rev. B 89, (24). 29 Rex, S. & Sudø, A. Tilting of the mgnetic field in Mjorn nnowires: Criticl ngle nd zero-energy differentil conductnce. Phys. Rev. B 9, 5429 (24). 3 Vn Woerkom, D. J., Geresdi, A. & Kouwenhoven, L. P. One minute prity lifetime of NTiN Cooper-pir trnsistor. Nt. Phys., 547 (25). 3 Chng, W. et l. Hrd gp in epitxil semiconductorsuperconductor nnowires. Nt. Nnotech., 232 (25). 32 Gziegovic, S. et l. Epitxy of dvnced nnowire quntum devices. Nture 548, 434 (27). 33 Tkei, S., Fregoso, B. M., Hui, H.-Y., Loos, A. M. & Ds Srm, S. Soft superconducting gp in semiconductor Mjorn nnowires. Phys. Rev. B, 8683 (23). 34 Pryor, C. E. & Fltté, M. E. Lndé g fctors nd oritl momentum quenching in semiconductor quntum dots. Phys. Rev. Lett. 96, 2684 (26). 35 Qu, F. et l. Quntized conductnce nd lrge g-fctor nisotropy in InS quntum point contcts. Nno Lett. 6, (26). 36 Iscson, R. A. Electron spin resonnce in n-type InS. Phys. Rev. 69, (968). 37 Groth, C. W., Wimmer, M., Akhmerov, A. R. & Wintl, X. Kwnt: softwre pckge for quntum trnsport. New J. Phys. 6, 6365 (24). 38 Cole, W. S., Ds Srm, S. & Stnescu, T. D. Effects of lrge induced superconducting gp on semiconductor Mjorn nnowires. Phys. Rev. B 92, 745 (25). 39 Reeg, C., Loss, D. & Klinovj, J. Metlliztion of Rsh wire y superconducting lyer in the strongproximity regime. Phys. Rev. B 97, (28). 4 Cr, D., Wng, J., Verheijen, M. A., Bkkers, E. P. A. M. & Plissrd, S. R. Rtionlly designed single-crystlline nnowire networks. Adv. Mter. 26, (24). 4 Flöhr, K. et l. Mnipulting InAs nnowires with sumicrometer precision. Rev. Sci. Instrum. 82, 375 (2) Suytin, D. B., Thelnder, C., Björk, M. T., Mximov, I. & Smuelson, L. Sulfur pssivtion for ohmic contct formtion to InAs nnowires. Nnotechnology 8, 537 (27). 43 Gül, O. et l. Hrd superconducting gp in InS nnowires. Nno Lett. 7, (27). 44 Liu, C.-X., Su, J. D. & Ds Srm, S. Role of dissiption in relistic Mjorn nnowires. Phys. Rev. B 95, 5452 (27). 45 Dnon, J., Hnsen, E. B. & Flenserg, K. Conductnce spectroscopy on Mjorn wires nd the inverse proximity effect. Phys. Rev. B 96, 2542 (27). 46 Hofstdter, D. R. Energy levels nd wve functions of Bloch electrons in rtionl nd irrtionl mgnetic fields. Phys. Rev. B 4, (976). 47 Gropp, W. D. et l. Numericl simultion of vortex dynmics in type-ii superconductors. J. Comput. Phys. 23, (996). 48 Tinkhm, M. Introduction to Superconductivity (Dover Pulictions, 24). 49 Du, Q. & Wu, X. Numericl solution of the threedimensionl Ginzurg Lndu models using rtificil oundry. SIAM J. Numer. Anl. 36, (999). 5 Vn Heck, B., Väyrynen, J. I. & Glzmn, L. I. Zeemn nd spin-orit effects in the Andreev spectr of nnowire junctions. Phys. Rev. B 96, 7544 (27). 5 Stnescu, T. D., Lutchyn, R. M. & Ds Srm, S. Dimensionl crossover in spin-orit-coupled semiconductor nnowires with induced superconducting piring. Physicl Review B 87, 9458 (23). Acknowledgements We thnk O.W.B. Benningshof, A. Geresdi, S. Goswmi, M.W.A. de Moor, M. Quintero-Pérez nd P. Rożek for vlule feedck nd ssistnce. This work hs een supported y the Netherlnds Orgnistion for Scientific Reserch (NWO), Foundtion for Fundmentl Reserch on Mtter (FOM), Europen Reserch Council (ERC) nd Microsoft Corportion Sttion Q. The work of F.N.R. nd E.B. ws supported y the Swedish Reserch Council Grnt No nd y Görn Gustfsson Foundtion for Reserch in Nturl Sciences nd Medicine. Author contriutions J.D.S.B., H.Z. nd Ö.G. fricted the devices, performed the mesurements nd nlysed the dt. B.N. nd M.W. performed the numericl tight-inding simultions. F.N.R., J.G., D.R., E.B. nd M.T. performed the Ginzurg-Lndu simultions. D.C., S.P. nd E.P.A.M.B. grew the InS nnowires. K.W. nd T.T. synthesized the h-bn crystls. H.Z. nd L.P.K. supervised the project. J.D.S.B., H.Z. nd O.G. cowrote the mnuscript with comments from ll uthors.

7 7 di/dv (2e2/h) S N Brrier 5 nm gte Super gte c d -.25 f x k BSO Δ e.9 di/dv (2e2/h). -2 k B=T Bx =.25 T By =.25 T Bz =.25 T -.2 B x 2.2 B BT 2Δ di/dv (2e2/h) Energy z E y BSO.6 VTG (V) -.5 B y B z Figure. Spin-orit induced nisotropic superconducting gp closing in mgnetic fields. () Flse-colour scnning electron microgrph of the Mjorn nnowire device. The device consists of n InS nnowire (lue) contcted y two Cr/Au norml contcts (N, yellow nd grey) nd NTiN superconducting contct (S, purple). Differentil conductnce, di/dv, is mesured y pplying is voltge, V, etween N nd S with the dditionl norml contct kept floting. The nnowire is isolted from the rrier gte (red) nd the super gte (green) y 3 nm thick oron nitride dielectric flke. () di/dv s function of the rrier gte voltge, VT G, t B = T, showing n induced gp of =.65 mev, without ny indiction of unintentionl quntum dot formtion. (c) Schemtic of the nnowire device nd definition of the xes. (d) Bnd digrm of Mjorn nnowire t n externlly pplied mgnetic field B perpendiculr to the spin-orit field BSO. The rrows indicte the totl mgnetic field BT = B + BSO long which the spin eigensttes re directed. At k = the spin lwys ligns with B. At incresing k, BSO increses, cusing the spin to tilt more towrds BSO. (e) di/dv s function of V t mgnetic fields long x, y, z (left, middle, right) for super gte voltge VSG = V. When B is long y the gp closes t smll field of.2 T, while SOI prevents the gp from closing up to.6 T long x nd z. The white dshed lines indicte fit to the gp closing corresponding to α =.5 eva (see Methods for detils). (f ) Horizontl line cuts of e t B indicted y the coloured rrows in e. The gp is mximl t B = T (lck) nd remins lrge t B =.25 T long x nd z (yellow, purple), while the gp is closed long y (lue).

8 8 di/dv (2e2/h) - B y - B z Zeemn + SOI B z 2 - B x - B y - B z Zeemn + SOI + Oritl - 2 B x c B y Zeemn + Oritl 2 B x Figure 2. Simultion of nisotropic superconducting gp closing. () Numericl simultions of differentil conductnce, di/dv, s function of is voltge, V, nd mgnetic field, B, including the Zeemn nd the oritl (Lorentz) effect of the mgnetic field. () Sme s, ut including Zeemn nd SOI insted of the oritl effect, reproducing the nisotropy in Fig. e. (c) Sme s, ut including the Zeemn, SOI nd oritl effect. The oritl effect enhnces the gp closing s compred to. The prmeters used in -c re g = 5, α =.2 eva, µ = 5.6 mev nd VG = -8 mev.

9 9 z.5 θ B y.5.5 V SG = -3 V.5 Without oritl V SG = 2.25 V.5 With oritl, ΔV G = -4 mev V SG = 3.75 V.5 With oritl, ΔV G = 2 mev c y z y -z -y -y z y -9 V <.2 mv d.5.5 B B SO B -3V +2.25V +3.75V B SO -.5 Figure 3. Superconducting gp dependence on mgnetic field orienttion in the plne perpendiculr to the wire xis. () Mesured di/dv, s function of V, upon rottion of B t.3 T over ngles Θ etween z nd y (s indicted in the top left) in second device (device B, see Supplementry Fig. 4 for the sme ehviour in device A). The voltge, V SG on the super gte (see insets) is vried in the three pnels. The gp is hrdest long z t ll V SG. The ngle rnge round z t which the gp is finite shrinks with incresing V SG, reflecting fster gp closing. () Simulted di/dv s function of Θ nd V t.25 T. The top pnel includes the Zeemn effect nd SOI. The middle nd ottom pnels dditionlly include the oritl effect t two vlues of the potentil difference V G etween the top nd middle of the wire. The gp is lwys mximum t B B SO nd t more positive V G the gp is reduced due to the oritl effect. (c) Horizontl line cuts of verged over is rnge V <.2 V t V SG = -3 V, 2.25 V, 3.75 V (lck, yellow, lue). The dshed lines indicte the z-xis (Θ = ). (d) Verticl line cuts of t Θ = (left) nd Θ = 9 (right)..5

10 d N S VSG 5 nm Super gte B c f -y z 9 y -9 9 ΔVG = -4 mev E E ΔVG = -4 mev VSG = -.9 V di/dv (2e2/h) e - di/dv (2e2/h).5 VSG = 5.6 V E BSO Brrier gte di/dv (2e2/h) 9 ΔVG = -8 mev - E -9 -y z 9 y Figure 4. Spin-orit field rotted y vrying the device geometry nd gte voltge. () Tilted view electron microgrph of Mjorn nnowire device prtilly covered with NTiN. In this device the electric field E (nd the ssocited spin-orit field BSO ) cn rotte wy from the z-xis (y-xis) due to symmetric screening nd work function difference, s illustrted in the inset. () Mesured differentil conductnce, di/dv, s function of is voltge, V, nd ngle Θ in the zy-plne t B = 75 mt nd VSG = 5.6 V, with horizontl line cut verged over V <.25 mv in the lower pnel. The gp is mximum t Θmx = 32 s indicted y the dshed line. (c) Sme s, ut t VSG = -.9 V nd B =.5 T. Θmx is gte-tuned to 22. (d-f ), Simulted di/dv t.25 T t vrious potentil differences VG (see inset) with the superconductor rotted to the side y 45 nd including the Zeemn effect, SOI, nd the oritl effect. The illustrtions in the insets indicte the direction of E, which is rotted y 45 from z in d. Θmx follows the direction of E, lso t more negtive VG, in which cse the oritl effect ecomes stronger (cf. e nd f ).

11 Supplementry Informtion: Spin-Orit Protection of Induced Superconductivity in Mjorn Nnowires Jouri D.S. Bommer, Ho Zhng, Önder Gül, Bs Nijholt, Michel Wimmer, Filipp N. Rykov 2, Julien Grud 3, Donjn Rodic 4, Egor Bev 2, Mtthis Troyer 4,5, Din Cr 6, Séstien R. Plissrd 6, Erik P.A.M. Bkkers,6, Kenji Wtne 7, Tkshi Tniguchi 7, Leo P. Kouwenhoven,8, QuTech nd Kvli Institute of Nnoscience, Delft University of Technology, 26 GA Delft, The Netherlnds 2 Deprtment of Physics, KTH-Royl Institute of Technology, SE-69 Stockholm, Sweden 3 Lortoire de Mthémtiques et Physique Théorique CNRS/UMR 735, Institut Denis Poisson FR2964, Université de Tours, Prc de Grndmont, 372 Tours, Frnce 4 Institut für Theoretische Physik, ETH Zürich, 893 Zürich, Switzerlnd 5 Microsoft Quntum, Redmond, WA 9852, USA 6 Deprtment of Applied Physics, Eindhoven University of Technology, 56 MB Eindhoven, The Netherlnds 7 Advnced Mterils Lortory, Ntionl Institute for Mterils Science, - Nmiki, Tsuku, 35-44, Jpn 8 Microsoft Sttion Q Delft, 26 GA Delft, The Netherlnds List of Supplementry Figures Supplementry Figure Anisotropic gp closing in dditionl devices Supplementry Figure 2 Ginzurg-Lndu simultions Supplementry Figure 3 Extrcting the SOI strength from level repulsion Supplementry Figure 4 Gp dependence on mgnetic field orienttion in zy-plne in device A Supplementry Figure 5 Dependence of spin-orit direction on super gte voltge in the device prtilly covered y NTiN Supplementry Figure 6 Gp dependence on mgnetic field orienttion in the device prtilly covered y NTiN Supplementry Figure 7 Extrcting SOI strength from gp closing curvture These uthors contriuted eqully to this work Correspondence to H.Z. (h.zhng-3@tudelft.nl) Present ddress: Deprtment of Physics, Hrvrd University, Cmridge, MA 238, USA Present ddress: CNRS-Lortoire d Anlyse et d Architecture des Systèmes (LAAS), Université de Toulouse, 7 venue du colonel Roche, F-34 Toulouse, Frnce

12 2 Device B 5 nm Device C 5 nm Device B..9 B x B y B z..5 c Device C B x B y B z Supplementry Figure. Anisotropic gp closing in dditionl devices. () Flse coloured scnning electron microgrphs of dditionl devices B (used in Fig. 3) nd C, showing similr nisotropy to the device in Fig. e. (,c), Differentil conductnce, di/dv, s function of the mgnetic field, B, long the x, y, nd z-xes (from left to right). The gp closes t much lower fields long the y-xis thn the x nd z-xes in ll devices fully covered with the superconductor. The white dshed lines indicte fits to the gp closing (see Methods) from which we extrct spin-orit strength α of.3 evå (for ) nd.35 evå (for c), with g = 6, 85 nd µ =.8, 2.7 mev s the remining fit prmeters for,c respectively. The super gte ws set to V SG = -.5 V, -2.6 V in,c respectively.

13 3 z x y y B I screening B c Optiml numer of vortices B B B x y z - x/λ B/B ext (%). -. ΔB x ΔB y ΔB z B x B y B z x/λ - x/λ 4-4 x/λ Supplementry Figure 2. Ginzurg-Lndu simultions. () The top pnel shows the schemtic of the geometry used for Ginzurg-Lndu simultions: superconducting film covering hexgonl nnowire. In superconductor exposed to n externl mgnetic field B we clculte the screening currents I screening, which induce stry mgnetic fields B in the nnowire. In we show B in the xy-plne in the middle of the nnowire, s indicted y the white line in. The ottom pnel shows top view of this xy-plne, where the rrows indicte the x nd y components of B in the nnowire for B z. () The x, y nd z-components (lck, yellow, lue) of the B reltive to the externl field B s function of the position x long the nnowire xis, where x = corresponds to the middle of the superconducting contct. The lines show the men stry field nd the shded regions re ounded y the minimum nd mximum stry field found long the nnowire width t prticulr x. The end of the superconducting film is indicted y the dshed line. B is long x, y nd z (left to right pnel). Since the device dimensions re comprle to the penetrtion depth λ = 29 nm, the mgnetic screening in the superconductor is incomplete, leding to smll screening currents nd stry fields of t most 4% of B. These modifictions re much smller nd do not mtch the nisotropy we oserve in the mesurements, which excludes Meissner screening s the origin of the oserved nisotropic gp closing. We note tht we hve lso evluted B t severl different mgnitudes of B s well s in the presence of vortices nd find reltive stry fields of very comprle mgnitude. (c) Energeticlly most fvourle numer of vortices s function of B long x, y nd z (lck, yellow, lue). Vortices form fr more esily for B z. An nisotropic gp closing due to vortices ner the nnowire would therefore cuse the fstest gp closing long z, contrry to the nisotropic gp closing we oserve, where the gp closes fstest for B y (see e.g. Fig. e). Furthermore, for B y vortices only strt to pper t B >.2 T, while the gp is lredy strongly suppressed t.2 T (see e.g. Fig. e), which excludes vortex formtion s the origin of the gp closing for B y.

14 δ SO 2δ SO (mev) α (evå) V SG (V) Supplementry Figure 3. Extrcting the SOI strength from level repulsion. () di/dv s function of V nd B t V SG = -3.3 V, mesured in device E. Two Andreev sttes come down from the gp edge nd exhiit n voided crossing round B =.5 T. The dshed lines indicte fits to the solution of eqution (3). The extrcted coupling δ SO etween the Andreev levels is indicted y the rrow. () 2δ SO s function of V SG. The right xis shows the estimtion of the SOI strength using α = 2δ SOL/π for the.2 µm long superconducting region. The errorrs show the stndrd devition in δ SO otined from the fits.

15 5.5 V SG = -2.25V V SG = V V SG = 2.25V V <.2 mv -2.25V V +2.25V -9 -y z y -z -y Supplementry Figure 4. Gp dependence on mgnetic field orienttion in zy-plne in device A. () Differentil conductnce, di/dv, s function of is voltge, V, upon rottion of the mgnetic field t.25 T over ngles Θ etween z nd y with different voltges on the super gte V SG in the three pnels. This is the sme device s presented in Fig. () Horizontl line cuts of verged over is rnge V <.2 mv, showing tht the hrdest gp is t Θ =, nd incresed V SG suppresses the gp when B is long y, the sme ehviours oserved in device B (Fig. 3).

16 V V -3.75V V -.525V +.875V V V +7.5V G su gp / G ove gp y z y -z -y -y z y -z -y -y z y -z -y c +7.5V 4 θ mx (o) 2-7.5V V SG (V) Supplementry Figure 5. Dependence of spin-orit direction on super gte voltge in the device prtilly covered y NTiN. () Differentil conductnce, di/dv, s function of is voltge, V, nd ngle Θ etween z nd y t vrious vlues of V SG s indicted in the insets. The dt is mesured t slightly different field mgnitudes etween. nd.2 T for the different V SG to optimise the nisotropy etween y nd z. The discontinuities in di/dv tht re visile for some of the scns re likely cused y chrge fluctutions in the dielectric environment. () The rtio etween the su gp conductnce (verged over V <.2 V) nd the ove gp conductnce (verged over V >.4 V) with V SG incresing from ottom to top nd offset for clrity. The minim of the curves signify the ngle t which the gp is hrdest, Θ mx, which shifts to higher ngles t incresing V SG. A lowpss filter is pplied long the Θ direction to suppress the effect of the chrge instilities (this procedure does not ffect the minim for the mesurements without chrge instilities, such s in Fig. 4). (c) Θ mx s determined from the first (lck) nd second (yellow) minimum of the curves in s function of V SG. The second minim (yellow) signify Θ mx t negtive B nd re sutrcted y 8 ccordingly.

17 7.. B x.2.5 c V <.3 mv y z y -z -y B y B B B B B B SO B z B B SO Supplementry Figure 6. Gp dependence on mgnetic field orienttion in the device prtilly covered y NTiN. () Differentil conductnce, di/dv, s function of the ngle Θ etween the z nd y-xes t V SG =.525 V nd B =. T, with horizontl line cut verged over is rnge V <.3 mv in the lower pnel. () di/dv s function of the mgnetic field B long the nnowire xis, with the white dshed lines showing the fit to the gp closing, resulting in spin-orit strength α of.35 evå (the other fit prmeters re g = 6, see B B SO in c, nd µ = 2.8 mev). (c) di/dv s function of B long y, B SO, z nd perpendiculr to B SO from left to right, with the colours in the heders corresponding to the coloured rrows in. The illustrtions in the insets indicte the direction of the mgnetic field. Note tht due to the chnged orienttion of B SO, B-sweeps long directions rotted y 25 from the y-xis (second pnel, B B SO) nd the z-xis (right pnel, B B SO) now exhiit strong nisotropy, insted of the y nd z-xes which show strong nisotropy in devices symmetriclly covered y NTiN.

18 8. evå.2 evå.5 evå 2. evå 2 B x B y E min /Δ B/B c - - Supplementry Figure 7. Extrcting SOI strength from gp closing curvture. () Lowest energy stte E min determining the gp in the one-dimensionl model given y eqution () nd (2) (see Methods) s function of mgnetic field, B, in units of the criticl field B c = 2 + µ 2 for vrious spin-orit strengths α. The curvture of the gp closing is strongly ffected y α. Stronger SOI countercts the Zeemn effect up to lrger B/B c, leding initilly to slow gp closing, followed y shrp gp closing when pproching the criticl field, where the lowest energy stte is t k for which B SO(k) vnishes. The remining prmeters re: () = mev, µ = 2 mev. () Comprison of the numericl simultions on the 3D tight inding model, including the oritl effect (colour mp), with the D model given y eqution which does not ccount for the oritl effect (dshed lines, see Methods). By djusting the g-fctor used in the Mjorn nnowire model from g = 5 to 65 to mtch the gp closing for B B SO, keeping ll other prmeters the sme in oth models, we find good greement for the gp closing for B x. We use this sme pproch to tke the oritl effect into ccount in n effective mnner in fits of the experimentlly oserved gp closing (see Methods). The remining prmeters used in the simultions shown here re () =.45 mev, µ =.95 mev, α =.2 evå, V G = - mev.