DATA SHEET. BAT93 Schottky barrier diode. Philips Semiconductors DISCRETE SEMICONDUCTORS. December 1993
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1 DISCRETE SEMICONDUCTORS DATA SHEET File under Discrete Semicnductrs, SC01 December 1993 Philips Semicnductrs
2 FEATURES Ultra-fast switching speed Lw frward vltage Tw-pin SMD package. DESCRIPTION Silicn epitaxial Schttky barrier dide with an integrated guard ring fr stress prtectin.iintended fr high speed switching, circuit prtectin and vltage clamping applicatins. The dide is encapsulated in a SOD123 SMD plastic package. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MAX. UNIT V R cntinuus reverse vltage 30 V I F cntinuus frward current 200 ma V F frward vltage I F = 10 ma 400 mv I R reverse current V R = 25 V 2 µa T j junctin temperature 150 C C d dide capacitance V R = 1 V 10 pf k a MAM058 Tp view Fig.1 Simplified utline (SOD123) and symbl. December
3 LIMITING VALUES In accrdance with the Abslute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V R cntinuus reverse vltage 30 V I F cntinuus frward current 200 ma I FRM repetitive peak frward current t p 1 s; δ ma I FSM nn-repetitive peak frward t p < 10 ms 600 ma current P tt ttal pwer dissipatin T amb 25 C 250 mw T stg strage temperature C T amb perating ambient temperature C T j junctin temperature 150 C THERMAL RESISTANCE SYMBOL PARAMETER THERMAL RESISTANCE R th j-a frm junctin t ambient; nte K/W Nte 1. Printed-circuit bard munting (SOD123 standard cnditins). CHARACTERISTICS T j = 25 C unless therwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V F frward vltage I F = 0.1 ma 240 mv I F = 1 ma 320 mv I F = 10 ma 400 mv I F = 30 ma 500 mv I F = 100 ma 800 mv V (BR)R reverse breakdwn vltage I R = 10 µa 30 V I R reverse current V R = 25 V; nte 1 2 µa C d dide capacitance V R = 1 V; f = 1 MHz 10 pf t rr reverse recvery time when switched frm I F = 10 ma t I R = 10 ma; R L = 100 Ω; measured at I R = 1 ma 5 ns Nte 1. Pulsed test: t p = 300 µs; δ = December
4 dbk, 10 3 halfpage I F (ma) (1) (2) (3) MSA I R (µa) (1) MSA (2) (1) (2) (3) 1 (3) V F (V) (1)T amb = 125 C. (2)T amb = 85 C. (3)T amb = 25 C V R (V) (1)T amb = 125 C. (2)T amb = 85 C. (3)T amb = 25 C. Fig.2 Frward current as a functin f frward vltage. Fig.3 Reverse current as a functin f reverse vltage. 15 MSA MSA894 C d (pf) P tt (mw) V R (V) T amb ( C) 150 Fig.4 Dide capacitance as a functin f reverse vltage. Fig.5 Pwer derating curve. December
5 PACKAGE OUTLINE handbk, full pagewidth 17 max (2x) 12 max (2x) max min cathde clur band,,,,,,,,,,,, 5 max (2x) A 0.1 max 12 max (2x) MBA M A Dimensins in mm. Fig.6 SOD123. December
6 DEFINITIONS Data Sheet Status Objective specificatin This data sheet cntains target r gal specificatins fr prduct develpment. Preliminary specificatin This data sheet cntains preliminary data; supplementary data may be published later. This data sheet cntains final prduct specificatins. Limiting values Limiting values given are in accrdance with the Abslute Maximum Rating System (IEC 134). Stress abve ne r mre f the limiting values may cause permanent damage t the device. These are stress ratings nly and peratin f the device at these r at any ther cnditins abve thse given in the Characteristics sectins f the specificatin is nt implied. Expsure t limiting values fr extended perids may affect device reliability. Applicatin infrmatin Where applicatin infrmatin is given, it is advisry and des nt frm part f the specificatin. LIFE SUPPORT APPLICATIONS These prducts are nt designed fr use in life supprt appliances, devices, r systems where malfunctin f these prducts can reasnably be expected t result in persnal injury. Philips custmers using r selling these prducts fr use in such applicatins d s at their wn risk and agree t fully indemnify Philips fr any damages resulting frm such imprper use r sale. December
7 NOTES December
8 a wrldwide cmpany Argentina: IEROD, Av. Jurament B, (1428) Buens Aires, Tel. (541) , Fax. (541) Australia: 34 Waterl Rad, NORTH RYDE, NSW 2113, Tel. (02) , Fax. (02) Austria: Triester Str. 64, A-1101 WIEN, P.O. Bx 213, Tel. (01) , Fax. (01) Belgium: Pstbus 90050, 5600 PB EINDHOVEN, The Netherlands, Tel. (31) , Fax. (31) Brazil: Rua d Rci th flr, Suite 51, CEP: SÃO PAULO-SP, Brazil. P.O. Bx 7383 ( ). Tel. (011) , Fax. (011) Canada: INTEGRATED CIRCUITS: Tel. (800) , Fax. (708) DISCRETE SEMICONDUCTORS: 601 Milner Ave, SCARBOROUGH, ONTARIO, M1B 1M8, Tel. (0416) ext. 2336, Fax. (0416) Chile: Av. Santa Maria 0760, SANTIAGO, Tel. (02) , Fax. (02) Clmbia: Carrera 21 N , BOGOTA, D.E., P.O. Bx 77621, Tel. (571) , Fax. (01) Denmark: Prags Bulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel. (032) , Fax. (031) Finland: Sinikallintie 3, SF ESPOO, Tel. (9) , Fax. (9) France: 4 rue du Prt-aux-Vins, BP317, SURESNES Cedex, Tel. (01) , Fax. (01) Germany: P.O. Bx , HAMBURG, Tel. (040)3296-0, Fax. (040) Greece: N. 15, 25th March Street, GR TAVROS, Tel. (01) / , Fax. (01) Hng Kng: 15/F Philips Ind. Bldg., Kung Yip St., KWAI CHUNG, Tel. (0) , Fax. (0) India: PEICO ELECTRONICS & ELECTRICALS Ltd., Cmpnents Dept., Shivsagar Estate, Blck 'A', Dr. Annie Besant Rd., Wrli, BOMBAY , Tel. (022) , Fax. (022) Indnesia: Philips Huse, Jalan H.R. Rasuna Said Kav. 3-4, P.O. Bx 4252, JAKARTA 12950, Tel. (021) , Fax. (021) Ireland: Newstead, Clnskeagh, DUBLIN 14, Tel. (01) , Fax. (01) Italy: Viale F. Testi, 327, MILANO, Tel. (02)6752.1, Fax. (02) Japan: Philips Bldg 13-37, Khnan 2 -chme, Minat-ku, TOKIO 108, Tel. (03) , Fax. (03) Krea: (Republic f) Philips Huse, Itaewn-dng, Yngsan-ku, SEOUL, Tel. (02) , Fax. (02) Malaysia: N. 76 Jalan Universiti, PETALING JAYA, SELANGOR, Tel. (03) , Fax. (03) Mexic: Philips Cmpnents, 5900 Gateway East, Suite 200, EL PASO, TX 79905, Tel. 9-5(800) , Fax. (708) Netherlands: Pstbus 90050, 5600 PB EINDHOVEN, Tel. (040) , Fax. (040) New Zealand: 2 Wagener Place, C.P.O. Bx 1041, AUCKLAND, Tel. (09) , Fax. (09) Nrway: Bx 1, Manglerud 0612, OSLO, Tel. (22) , Fax. (22) Pakistan: Philips Markaz, M.A. Jinnah Rd., KARACHI-3, Tel. (021) , Fax. (021) Philippines: PHILIPS SEMICONDUCTORS PHILIPPINES Inc, 106 Valer St. Salced Village, P.O. Bx 911, MAKATI, Metr MANILA, Tel. (02) , Fax. (02) Prtugal: Av. Eng. Duarte Pachec 6, 1009 LISBOA Cdex, Tel. (01) , Fax. (01) Singapre: Lrng 1, Ta Payh, SINGAPORE 1231, Tel. (65) , Fax. (65) Suth Africa: Main Rad, Martindale, P.O. Bx 7430,JOHANNESBURG 2000, Tel. (011) , Fax. (011) Spain: Balmes 22, BARCELONA, Tel. (93) , Fax. (93) Sweden: Kttbygatan 7, Akalla. S STOCKHOLM, Tel. (0) , Fax. (0) Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel. (01) , Fax. (01) Taiwan: 69, Min Sheng East Rad, Sec 3, P.O. Bx 22978, TAIPEI 10446, Tel. (2) , Fax. (2) Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 60/14 MOO 11, Bangna - Trad Rad Km. 3 Prakanng, BANGKOK 10260, Tel. (2) t 9, (2) , Fax. (2) Turkey: Talatpasa Cad. N. 5, LEVENT/ISTANBUL, Tel. (01) , Fax. (01) United Kingdm: Philips Semicnductrs Limited, P.O. Bx 65, Philips Huse, Trringtn Place, LONDON, WC1E 7HD, Tel. (071) , Fax. (071) United States: INTEGRATED CIRCUITS: 811 East Arques Avenue, SUNNYVALE, CA , Tel. (800) , Fax. (708) DISCRETE SEMICONDUCTORS: 2001 West Blue Hern Blvd., P.O. Bx 10330, RIVIERA BEACH, FLORIDA 33404, Tel. (800) and (407) , Fax. (407) Uruguay: Crnel Mra 433, MONTEVIDEO, Tel. (02) , Fax. (02) Fr all ther cuntries apply t: Philips Semicnductrs, Internatinal Marketing and Sales, Building BAF-1, P.O. Bx 218, 5600 MD, EINDHOVEN, The Netherlands, Telex phtcnl, Fax SCD24 Philips Electrnics N.V All rights are reserved. Reprductin in whle r in part is prhibited withut the prir written cnsent f the cpyright wner. The infrmatin presented in this dcument des nt frm part f any qutatin r cntract, is believed t be accurate and reliable and may be changed withut ntice. N liability will be accepted by the publisher fr any cnsequence f its use. Publicatin theref des nt cnvey nr imply any license under patent- r ther industrial r intellectual prperty rights. Printed in The Netherlands Philips Semicnductrs
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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 NPN/PNP resistor-equipped transistors Supersedes data of 1999 Apr 13 2001 Feb 16 FEATURES Transistors with different polarity and built-in bias
DATA SHEET. BC369 PNP medium power transistor; 20 V, 1 A DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Nov 20.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 23 Nov 2 24 Nov 5 FEATURES High current Two current gain selections. APPLICATIONS Linear voltage regulators High side switches
P01xxxL SENSITIVE GATE SCR. FEATURES IT(RMS) =0.2A V DRM = 100V to 400V Low I GT <1µA max to < 200µA
P01xxxL SENSTVE GATE SCR FEATURES T(RMS) =0.2A V DRM = 100V t 400V Lw GT
DATA SHEET. BC368 NPN medium power transistor; 20 V, 1 A DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Dec 01.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D86 Supersedes data of 2003 Dec 0 2004 Nov 05 FEATURES High current. APPLICATIONS Linear voltage regulators Low side switch Supply line switch for negative
DISCRETE SEMICONDUCTORS DATA SHEET. MX1011B700Y NPN microwave power transistor Feb 18. Product specification Supersedes data of November 1994
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of November 1994 1997 Feb 18 FEATURES Suitable for short and medium pulse applications up to 100 µs/10% Internal input and output prematching networks
Symbol Parameter Value Unit. Tstg Storage and operating junction temperature range - 40, T j - 40, + 125
SxH SENSTVE GATE SCR FEATURES T(RMS) =A V DRM = V t V Lw GT < µa K A G DESCRPTON The SxH series f SCRs uses a high perfrmance MESA GLASS PNPN technlgy. These parts are intended fr general purpse applicatins
DATA SHEET. BYG70 series Fast soft-recovery controlled avalanche rectifiers DISCRETE SEMICONDUCTORS Jun 05
DISCRETE SEMICONDUCTORS DATA SHEET, halfpage M3D168 BYG7 series File under Discrete Semiconductors, SC1 1996 Jun 5 BYG7 series FEATURES Glass passivated High maximum operating temperature Low leakage current
DISCRETE SEMICONDUCTORS DATA SHEET. book, halfpage M3D302. PBSS4240DPN 40 V low V CEsat NPN/PNP transistor. Product specification 2003 Feb 20
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D32 PBSS424DPN 4 V low V CEsat NPN/PNP transistor 23 Feb 2 FEATURES Low collector-emitter saturation voltage V CEsat High collector current capability
DATA SHEET. PH2369 NPN switching transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr Oct 11.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1999 Apr 27 2004 Oct 11 FEATURES Low current (max. 200 ma) Low voltage (max. 15 V). APPLICATIONS High-speed switching. PINNING
PSMN K. 1. Description. 2. Features. 3. Applications. 4. Pinning information. N-channel enhancement mode field-effect transistor
Rev. 6 January 2 Product specification. Description SiliconMX products use the latest Philips TrenchMOS 2 technology to achieve the lowest possible on-state resistance in a SOT96- (SO8) package. Product
DATA SHEET. BFQ540 NPN wideband transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1998 Aug May 23.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 Supersedes data of 1998 Aug 27 2000 May 23 FEATURES High gain High output voltage Low noise Gold metallization ensures excellent reliability Low
DATA SHEET. BCP69 PNP medium power transistor; 20 V, 1 A DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2002 Nov 15.
DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D087 Supersedes data of 2002 Nov 15 2003 Nov 25 FEATURES High current Three current gain selections 1.4 W total power dissipation. APPLICATIONS Linear
T0521SB. Applications. Features. Mechanical Characteristics. Circuit Diagram I/O_1. Description. Pin Configuration
Features Transient prtectin fr high-speed data lines IEC 61000-4-2 (ESD) ±25kV (Air) ±20kV (Cntact) IEC 61000-4-2 (EFT)40A(5/50 ns) Cable Discharge Event (CDE) Package ptimized fr high-speed lines Ultra-small
DATA SHEET. PMBFJ308; PMBFJ309; PMBFJ310 N-channel silicon field-effect transistors DISCRETE SEMICONDUCTORS
DISCRETE SEMICONDUCTORS DATA SHEET N-channel silicon field-effect transistors Supersedes data of April 995 File under Discrete Semiconductors, SC7 996 Sep FEATURES Low noise Interchangeability of drain
DATA SHEET. BST84 N-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS
查询 供应商 捷多邦, 专业 PCB 打样工厂,24 小时加急出货 DISCRETE SEMICONDUCTORS DATA SHEET N-channel enhancement mode vertical File under Discrete Semiconductors, SC13b April 1995 DESCRIPTION N-channel vertical in SOT89 envelope
DATA SHEET. BYD77 series Ultra fast low-loss controlled avalanche rectifiers DISCRETE SEMICONDUCTORS May 24
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D Supersedes data of December 99 File under Discrete Semiconductors, SC 996 May 4 FEATURES Glass passivated High maximum operating temperature Low leakage
DATA SHEET. BC846W; BC847W; BC848W NPN general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 23
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D12 Supersedes data of 1999 Apr 23 22 Feb 4 FEATURES Low current (max. 1 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification.
List... Package outline... Features Mechanical data... Maximum ratings... Electrical characteristics... Rating and characteristic curves...
List List... Package utline... 1 2 Features... 2 Mechanical data... Maximum ratings... Electrical characteristics... Rating and characteristic curves... 2 2 3 4 Pinning infrmatin... 5 Marking... Suggested
DATA SHEET. BYV2100 Fast soft-recovery controlled avalanche rectifier DISCRETE SEMICONDUCTORS. Product specification 1996 Oct 07. handbook, 2 columns
DISCRETE SEMICONDUCTORS DATA SHEET handbook, columns M3D6 BYV 996 Oct 7 BYV FEATURES Glass passivated High maximum operating temperature Low leakage current Excellent stability Guaranteed avalanche energy
DATA SHEET. BC856; BC857; BC858 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 12
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D88 Supersedes data of 1999 Apr 12 22 Feb 4 FEATURES Low current (max. 1 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification.
DATA SHEET. BUW11F; BUW11AF Silicon diffused power transistors DISCRETE SEMICONDUCTORS Aug 14
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 14 DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a
DISCRETE SEMICONDUCTORS DATA SHEET. PMBT3906 PNP switching transistor. Product specification Supersedes data of 1999 Apr 27.
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 1999 Apr 27 2004 Jan 21 FEATURES Collector current capability I C = 200 ma Collector-emitter voltage V CEO = 40 V. APPLICATIONS General amplification
DATA SHEET. BYD63 Ripple blocking diode DISCRETE SEMICONDUCTORS Jun 10
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D9 Supersedes data of November 995 File under Discrete Semiconductors, SC 996 Jun FEATURES Glass passivated High maximum operating temperature Low leakage
DATA SHEET. BSN304 N-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1997 Jun 17
DISCRETE SEMICONDUCTORS DATA SHEET age M3D6 Supersedes data of 997 Jun 7 2 Dec FEATURES PINNING - TO-92 variant Direct interface to C-MOS, TTL, etc. High-speed switching No secondary breakdown. APPLICATIONS
DATA SHEET. BYD31 series Fast soft-recovery controlled avalanche rectifiers DISCRETE SEMICONDUCTORS Sep 18
DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage M3D Supersedes data of 996 Jun 5 File under Discrete Semiconductors, SC 996 Sep 8 FEATURES Glass passivated High maximum operating temperature Low leakage
DATA SHEET. BC556; BC557 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1997 Mar 27.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1997 Mar 27 FEATURES Low current (max. 100 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification.
DATA SHEET. BC846; BC847; BC848 NPN general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2002 Feb 04
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 22 Feb 4 24 Feb 6 FEATURES Low current (max. 1 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification. PINNING PIN 1
DATA SHEET. BYD11 series Controlled avalanche rectifiers DISCRETE SEMICONDUCTORS Sep 26
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D Supersedes data of April 996 File under Discrete Semiconductors, SC 996 Sep 6 FEATURES Glass passivated High maximum operating temperature Low leakage
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 27 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 217 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
DATA SHEET. PBSS4540Z 40 V low V CEsat NPN transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Jul Nov 14.
DISCRETE SEMICONDUCTORS DATA SHEET age M3D087 PBSS4540Z 40 V low V CEsat NPN transistor Supersedes data of 2001 Jul 24 2001 Nov 14 FEATURES Low collector-emitter saturation voltage High current capabilities
DATA SHEET. BF246A; BF246B; BF246C; BF247A; BF247B; BF247C N-channel silicon junction field-effect transistors DISCRETE SEMICONDUCTORS
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 29 FEATURES Interchangeability of drain and source connections High I DSS range Frequency
DATA SHEET. BSS87 N-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1997 June 23
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 Supersedes data of 1997 June 23 2001 May 18 FEATURES Direct interface to C-MOS, TTL, etc. High-speed switching No secondary breakdown Low R DSon.
DATA SHEET. PBSS4480X 80 V, 4 A NPN low V CEsat (BISS) transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2004 Aug 5
DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D09 Supersedes data of 2004 Aug 5 2004 Oct 25 FEATURES High h FE and low V CEsat at high current operation High collector current capability: I C maximum
DATA SHEET. BLF2043 UHF power LDMOS transistor DISCRETE SEMICONDUCTORS. Objective specification Supersedes data of 2000 Feb 17.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D438 Supersedes data of 2000 Feb 17 2000 Feb 23 FEATURES High power gain Easy power control Excellent ruggedness Source on mounting base eliminates DC
DATA SHEET. BLF1043 UHF power LDMOS transistor DISCRETE SEMICONDUCTORS. Objective specification Supersedes data of 2000 Feb 17.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D438 Supersedes data of 2000 Feb 17 2000 Feb 23 FEATURES High power gain Easy power control Excellent ruggedness Source on mounting base eliminates DC
DATA SHEET. 1N4001G to 1N4007G Rectifiers DISCRETE SEMICONDUCTORS May 24. Product specification Supersedes data of April 1992
DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D6 Supersedes data of April 992 996 May 24 FEATURES Glass passivated High imum operating temperature Low leakage current Excellent stability Available
DATA SHEET. BYD37 series Fast soft-recovery controlled avalanche rectifiers DISCRETE SEMICONDUCTORS
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D121 Supersedes data of 1996 Jun 5 1999 Nov 16 FEATURES Glass passivated High maximum operating temperature Low leakage current Excellent stability Guaranteed
DATA SHEET. PBSS5350D 50 V low V CEsat PNP transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Jul Nov 13.
DISCRETE SEMICONDUCTORS DATA SHEET age M3D302 PBSS5350D 50 V low V CEsat PNP transistor Supersedes data of 2001 Jul 13 2001 Nov 13 FEATURES Low collector-emitter saturation voltage High current capability
DATA SHEET. BC856; BC857; BC858 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Apr 09
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 23 Apr 9 24 Jan 16 FEATURES Low current (max. 1 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification. PINNING PIN
DATA SHEET. BYD17 series General purpose controlled avalanche rectifiers DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1996 Sep 26
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D2 Supersedes data of 996 Sep 26 999 Nov FEATURES Glass passivated High maximum operating temperature Low leakage current Excellent stability Guaranteed
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 27 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and
SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER. VOLTAGE RANGE 50 to 1000 Volts CURRENT 10 Amperes VRRM VRMS VDC IFSM
SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE RANGE 5 t CURRENT Amperes RSM THRU RS7M FEATURES * Lw leakage * Lw frward vltage * Munting psitin : Any * Surge verlad rating: Amperes peak
DATA SHEET. BF908WR N-channel dual-gate MOS-FET. Philips Semiconductors DISCRETE SEMICONDUCTORS Apr 25
DISCRETE SEMICONDUCTORS DATA SHEET File under Discrete Semiconductors, SC7 1995 Apr 25 Philips Semiconductors FEATURES High forward transfer admittance Short channel transistor with high forward transfer