DF452. Fast Recovery Diode DF452 APPLICATIONS KEY PARAMETERS V RRM 1600V I F(AV) 540A I FSM. 5000A Q r t rr FEATURES VOLTAGE RATINGS

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1 Fast Recvery Dide Replaces January 2000 versin, DS DS June 2004 APPLICATIONS Inductin Heating A.C. Mtr Drives Inverters And Chppers Welding High Frequency Rectificatin UPS KEY PARAMETERS V RRM 1600V I F(AV) 540A I FSM 5000A Q r 35µC t rr 3.2µs FEATURES Duble side cling High surge capability Lw recvery charge VOLTAGE RATINGS Type Number Repetitive Peak Reverse Vltage V RRM V Cnditins V RSM = V RRM + V Outline type cde: M771. See Package Details fr further infrmatin. Fig. 1 Package utline ORDERING INFORMATION When rdering, select the required part number shwn in the Vltage Ratings selectin table, e.g.: 12 Nte: Please use the cmplete part number when rdering and qute this number in any future crrespndance relating t yur rder. 1/7

2 CURRENT RATINGS Symbl Parameter Cnditins Duble Side Cled Max. Units I F(AV) Mean frward current Half wave resistive lad, T case = 65 C 540 A I F(RMS) RMS value T case = 65 C 628 A I F Cntinuus (direct) frward current T case = 65 C - A SURGE RATINGS Symbl Parameter Cnditins Max. Units I FSM I 2 t Surge (nn-repetitive) frward current I 2 t fr fusing 10ms half sine; with 0% V RRM, T j = 150 C 5.0 ka 125 x 10 3 A 2 s THERMAL AND MECHANICAL DATA Symbl Parameter Cnditins Min. Max. Units Duble side cled dc R th(j-c) Thermal resistance - junctin t case Single side cled Ande dc Cathde dc Duble side Clamping frce 5.0kN R th(c-h) Thermal resistance - case t heatsink with munting cmpund Single side T vj Virtual junctin temperature Frward (cnducting) C T stg Strage temperature range C - Clamping frce kn 2/7

3 CHARACTERISTICS Symbl Parameter Cnditins Typ. Max. Units V FM I RRM t rr Frward vltage Peak reverse current Reverse recvery time At 750A peak, T case = 25 C V At V RRM, T case = 150 C - 40 ma µs Q RA1 Recvered charge (50% chrd) I F = 200A, di RR /dt = 20A/µs - 35 µc I RM Reverse recvery current T case = 125 C, V R = V - 43 A K Sft factr V TO Threshld vltage At T vj = 150 C V r T Slpe resistance At T vj = 150 C mω DEFINITION OF K FACTOR AND Q RA1 Q RA1 = 0.5x I RR (t 1 + t 2 ) di R /dt k = t 1 /t 2 t 1 t 2 τ 0.5x I RR I RR 3/7

4 CURVES 3000 Measured under pulse cnditins 500 Measured under pulse cnditins Instantaneus frward current I F - (A) T j = 150 C T j = 25 C Instantaneus frward current I F - (A) T j = 150 C T j = 25 C Instantaneus frward vltage V F - (V) Fig.2 Maximum (limit) frward characteristics Instantaneus frward vltage V F - (V) Fig.3 Maximum (limit) frward characteristics Reverse recvered charge Q rr - (µc) I F = A I F I F = 200A Cnditins: T j = 125 C, V R = V I F = 2000A I F = A I F = 500A Q S = 50µs 0 Q S Reverse recvery current I rr - (A) I F = A I F = 200A Cnditins: T j = 125 C, V R = V I F = 2000A I F = A I F = 500A t p = 1ms di R /dt Rate f rise f reverse current di R /dt - (A/µs) Fig.4 Recvered charge I RR Rate f rise f reverse current di R /dt - (A/µs) Fig.5 Typical reverse recvery current vs rate f rise f frward current 4/7

5 0.1 Thermal impedance - junctin t case, Z th(j-c) - ( ) 0.01 d.c. Duble side cled Time - (s) 10 Fig.6 Maximum (limit) transient thermal impedance - junctin t case - ( ) 5/7

6 PACKAGE DETAILS Fr further package infrmatin, please cntact Custmer Services. All dimensins in mm, unless stated therwise. DO NOT SCALE. 2 hles Ø3.6 x 2.0 deep (One in each electrde) Cathde Ø42 max Ø19 nm Ø19 nm Ande Nminal weight: 50g Clamping frce: 5kN ±10% Package utline type cde: M771 6/7

7 POWER ASSEMBLY CAPABILITY The Pwer Assembly grup was set up t prvide a supprt service fr thse custmers requiring mre than the basic semicnductr, and has develped a flexible range f heatsink and clamping systems in line with advances in device vltages and current capability f ur semicnductrs. We ffer an extensive range f air and liquid cled assemblies cvering the full range f circuit designs in general use tday. The Assembly grup ffers high quality engineering supprt dedicated t designing new units t satisfy the grwing needs f ur custmers. Using the latest CAD methds ur team f design and applicatins engineers aim t prvide the Pwer Assembly Cmplete Slutin (PACs). HEATSINKS The Pwer Assembly grup has its wn prprietary range f extruded aluminium heatsinks which have been designed t ptimise the perfrmance f Dynex semicnductrs. Data with respect t air natural, frced air and liquid cling (with flw rates) is available n request. Fr further infrmatin n device clamps, heatsinks and assemblies, please cntact yur nearest sales representative r Custmer Services. Stresses abve thse listed in this data sheet may cause permanent damage t the device. In extreme cnditins, as with all semicnductrs, this may include ptentially hazardus rupture f the package. Apprpriate safety precautins shuld always be fllwed. pwer_slutins@dynexsemi.cm HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Dddingtn Rad, Lincln. Linclnshire. LN6 3LF. United Kingdm. Tel: +44-(0) Fax: +44-(0) CUSTOMER SERVICE Tel: +44 (0) / Fax: +44 (0) SALES OFFICES Benelux, Italy & Switzerland: Tel: +33 (0) Fax: +33 (0) France: Tel: +33 (0) Fax: +33 (0) Tel: +33 (0) Fax: +33 (0) Germany, Nrthern Eurpe, Spain & Rest Of Wrld: Tel: +44 (0) / Fax: +44 (0) Nrth America: Tel: (440) Fax: (440) Tel: (949) Fax: (949) These ffices are supprted by Representatives and Distributrs in many cuntries wrld-wide. Dynex Semicnductr 2003 TECHNICAL DOCUMENTATION NOT FOR RESALE. PRODUCED IN UNITED KINGDOM This publicatin is issued t prvide infrmatin nly which (unless agreed by the Cmpany in writing) may nt be used, applied r reprduced fr any purpse nr frm part f any rder r cntract nr t be regarded as a representatin relating t the prducts r services cncerned. N warranty r guarantee express r implied is made regarding the capability, perfrmance r suitability f any prduct r service. The Cmpany reserves the right t alter withut prir ntice the specificatin, design r price f any prduct r service. Infrmatin cncerning pssible methds f use is prvided as a guide nly and des nt cnstitute any guarantee that such methds f use will be satisfactry in a specific piece f equipment. It is the user's respnsibility t fully determine the perfrmance and suitability f any equipment using such infrmatin and t ensure that any publicatin r data used is up t date and has nt been superseded. These prducts are nt suitable fr use in any medical prducts whse failure t perfrm may result in significant injury r death t the user. All prducts and materials are sld and services prvided subject t the Cmpany's cnditins f sale, which are available n request. All brand names and prduct names used in this publicatin are trademarks, registered trademarks r trade names f their respective wners.

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