DATA SHEET. BSS87 N-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1997 June 23
|
|
- Silvester Rice
- 5 years ago
- Views:
Transcription
1 DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 Supersedes data of 1997 June May 18
2 FEATURES Direct interface to C-MOS, TTL, etc. High-speed switching No secondary breakdown Low R DSon. PINNING - SOT89 PIN 1 source 2 drain 3 gate DESCRIPTION APPLICATIONS Line current interruptor in telephone sets Applications in relay, high-speed and line transformer drivers. handbook, halfpage g d DESCRIPTION in a SOT89 package s Bottom view MAM355 Fig.1 Simplified outline (SOT89) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V DS drain-source voltage (DC) 200 V V GSO gate-source voltage (DC) open drain ±20 V I D drain current (DC) 400 ma P tot total power dissipation T amb 25 C 1 W R DSon drain-source on-state resistance I D = 400 ma; V GS =10V Ω y fs forward transfer admittance I D = 400 ma; V DS = 25 V ms LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V DS drain-source voltage (DC) 200 V V GSO gate-source voltage (DC) open drain ±20 V I D drain current (DC) 400 ma I DM peak drain current 1.6 A P tot total power dissipation T amb 25 C; note 1 1 W T stg storage temperature C T j junction temperature 150 C Note 1. Device mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead minimum mm 2001 May 18 2
3 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-a thermal resistance from junction to ambient note K/W Note 1. Device mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead minimum mm CHARACTERISTICS T j =25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V (BR)DSS drain-source breakdown voltage I D = 250 µa; V GS = V I DSS drain-source leakage current V DS =60V; V GS =0 200 na V DS = 200 V; V GS = µa I GSS gate-source leakage current V GS = ±20 V; V DS =0 ±100 na V GSth gate-source threshold voltage I D = 1 ma; V GS =V DS V R DSon drain-source on-state resistance I D = 400 ma; V GS =10V Ω Y fs transfer admittance I D = 400 ma; V DS = 25 V ms C iss input capacitance V DS =25V; V GS =0; pf f = 1 MHz C oss output capacitance V DS =25V; V GS =0; pf f = 1 MHz C rss reverse transfer capacitance V DS =25V; V GS =0; f = 1 MHz pf Switching times (see Figs 2 and 3) t on turn-on time I D = 250 ma; V DD =50V; 6 10 ns V GS = 0 to 10 V t off turn-off time I D = 250 ma; V DD =50V; V GS = 0 to 10 V ns 2001 May 18 3
4 handbook, halfpage V DD = 50 V handbook, halfpage INPUT 90 % 10 % 90 % 10 V 0 V 50 Ω I D OUTPUT 10 % MSA631 t on t off MBB692 V DD =50V. Fig.2 Switching times test circuit. Fig.3 Input and output waveforms May 18 4
5 PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 3 leads SOT89 D B A b3 E H E L b2 c w M b 1 e 1 e mm scale DIMENSIONS (mm are the original dimensions) UNIT mm A b b b c D E e 3.0 e H E L min. 0.8 w 0.13 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ SOT89 TO-243 SC-62 EUROPEAN PROJECTION ISSUE DATE May 18 5
6 DATA SHEET STATUS DATA SHEET STATUS (1) PRODUCT STATUS (2) DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified May 18 6
7 NOTES 2001 May 18 7
8 a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel , Fax Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel , Fax Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, MINSK, Tel , Fax Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel , Fax Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel , Fax China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel , Fax Colombia: see South America Czech Republic: see Austria Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V, Tel , Fax Finland: Sinikalliontie 3, FIN ESPOO, Tel , Fax France: 7-9 Rue du Mont Valérien, BP317, SURESNES Cedex, Tel , Fax Germany: Hammerbrookstraße 69, D HAMBURG, Tel , Fax Hungary: Philips Hungary Ltd., H-1119 Budapest, Fehervari ut 84/A, Tel: , Fax: India: Philips INDIA Ltd, Band Box Building, 2nd floor, 254-D, Dr. Annie Besant Road, Worli, MUMBAI , Tel , Fax Indonesia: PT Philips Development Corporation, Semiconductors Division, Gedung Philips, Jl. Buncit Raya Kav , JAKARTA 12510, Tel ext. 2501, Fax Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel , Fax Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel , Fax Italy: PHILIPS SEMICONDUCTORS, Via Casati, MONZA (MI), Tel , Fax Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO , Tel , Fax Korea: Philips House, Itaewon-dong, Yongsan-ku, SEOUL, Tel , Fax Malaysia: No. 76 Jalan Universiti, PETALING JAYA, SELANGOR, Tel , Fax Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel , Fax Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel , Fax New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel , Fax Norway: Box 1, Manglerud 0612, OSLO, Tel , Fax Pakistan: see Singapore Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel , Fax Poland: Al.Jerozolimskie 195 B, WARSAW, Tel , Fax Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, MOSCOW, Tel , Fax Singapore: Lorong 1, Toa Payoh, SINGAPORE , Tel , Fax Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., Main Road Martindale, 2092 JOHANNESBURG, P.O. Box Newville 2114, Tel , Fax South America: Al. Vicente Pinzon, 173, 6th floor, SÃO PAULO, SP, Brazil, Tel , Fax Spain: Balmes 22, BARCELONA, Tel , Fax Sweden: Kottbygatan 7, Akalla, S STOCKHOLM, Tel , Fax Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel Fax Taiwan: Philips Semiconductors, 5F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel , Fax Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 60/14 MOO 11, Bangna Trad Road KM. 3, Bagna, BANGKOK 10260, Tel , Fax Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr Umraniye, ISTANBUL, Tel , Fax Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, KIEV, Tel , Fax United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel , Fax United States: 811 East Arques Avenue, SUNNYVALE, CA , Tel , Fax Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, BEOGRAD, Tel , Fax For all other countries apply to: Philips Semiconductors, Marketing Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax Internet: Philips Electronics N.V SCA72 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands /03/pp8 Date of release: 2001 May 18 Document order number:
9 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: NXP:,115
DATA SHEET. BSS192 P-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1997 Jun 20
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D19 Supersedes data of 1997 Jun 2 22 May 22 FEATURES Direct interface to C-MOS, TTL, etc. High-speed switching No secondary breakdown. APPLICATIONS Line
More informationDATA SHEET. PUMD3 NPN/PNP resistor-equipped transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 13.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 NPN/PNP resistor-equipped transistors Supersedes data of 1999 Apr 13 2001 Feb 16 FEATURES Transistors with different polarity and built-in bias
More informationBSH Description. 2. Features. 3. Applications. 4. Pinning information. N-channel enhancement mode field-effect transistor
M3D88 Rev. 25 August 2 Product specification. Description in a plastic package using TrenchMOS technology. Product availability: in SOT23. 2. Features TrenchMOS technology Very fast switching Logic level
More informationDATA SHEET. BD131 NPN power transistor DISCRETE SEMICONDUCTORS Apr 12. Product specification Supersedes data of 1997 Mar 04.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 Supersedes data of 1997 Mar 04 1999 Apr 12 FEATURES High current (max. 3 A) Low voltage (max. 45 V). APPLICATIONS General purpose power applications.
More informationDATA SHEET. BC807W PNP general purpose transistor DISCRETE SEMICONDUCTORS May 18. Product specification Supersedes data of 1997 Jun 09
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D187 Supersedes data of 1997 Jun 09 1999 May 18 FEATURES PINNING High current (max. 500 ma) Low voltage (max. 45 V). APPLICATIONS General purpose switching
More informationDATA SHEET. BS108 N-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS
DISCRETE SEMICONDUCTORS DATA SHEET N-channel enhancement mode vertical File under Discrete Semiconductors, SC13b April 1995 FEATURES Direct interface to C-MOS, TTL, etc. High-speed switching No secondary
More informationDATA SHEET. BSN254; BSN254A N-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1997 Jun 23 22 Feb 19 FEATURES Direct interface to C-MOS, TTL, etc. High-speed switching No secondary breakdown Low R DSon. APPLICATIONS
More informationDISCRETE SEMICONDUCTORS DATA SHEET. k, halfpage M3D088. MMBT3904 NPN switching transistor. Product specification 2000 Apr 11
DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 2000 Apr 11 FEATURES PINNING Low current (max. 100 ma) Low voltage (max. 40 V). APPLICATIONS Telephony and professional communication equipment. PIN
More informationDATA SHEET. BSS89 N-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS Apr 24
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 1997 Jun 20 File under Discrete Semiconductors, SC13b 1998 Apr 24 FEATURES Direct interface to C-MOS, TTL, etc. High-speed switching No secondary breakdown.
More informationDISCRETE SEMICONDUCTORS DATA SHEET. ok, halfpage M3D049. 1PS76SB70 Schottky barrier diode. Product specification 1998 Jul 16
DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D049 1998 Jul 16 FEATURES Low forward voltage Guard ring protected Very small plastic SMD package Low diode capacitance. DESCRIPTION Planar encapsulated
More informationDATA SHEET. PBSS4350D 50 V low V CEsat NPN transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Jan Jul 13.
DISCRETE SEMICONDUCTORS DATA SHEET age M3D32 PBSS435D 5 V low V CEsat NPN transistor Supersedes data of 21 Jan 26 21 Jul 13 FEATURES Low collector-emitter saturation voltage High current capability Improved
More informationDATA SHEET. BFQ540 NPN wideband transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1998 Aug May 23.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 Supersedes data of 1998 Aug 27 2000 May 23 FEATURES High gain High output voltage Low noise Gold metallization ensures excellent reliability Low
More informationDATA SHEET. BSN304 N-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1997 Jun 17
DISCRETE SEMICONDUCTORS DATA SHEET age M3D6 Supersedes data of 997 Jun 7 2 Dec FEATURES PINNING - TO-92 variant Direct interface to C-MOS, TTL, etc. High-speed switching No secondary breakdown. APPLICATIONS
More informationDATA SHEET. BSP225 P-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS
DISCRETE SEMICONDUCTORS DATA SHEET P-channel enhancement mode vertical File under Discrete Semiconductors, SC13b April 1995 FEATURES Low R DS(on) Direct interface to C-MOS, TTL, etc. High-speed switching
More informationDATA SHEET. BB149 UHF variable capacitance diode DISCRETE SEMICONDUCTORS Sep 15. Product specification Supersedes data of 1996 May 03.
DISCRETE SEMICONDUCTORS DATA SHEET lfpage M3D049 Supersedes data of 1996 May 03 1998 Sep 15 FEATURES Excellent linearity Excellent matching to 1% DMA Very small plastic SMD package C28: 2.1 pf; ratio 9
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 217 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
More informationDATA SHEET. BS107 N-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS
DISCRETE SEMICONDUCTORS DATA SHEET N-channel enhancement mode vertical File under Discrete Semiconductors, SC13b April 1995 FEATURES Direct interface to C-MOS, TTL, etc. High-speed switching No secondary
More informationDATA SHEET. BLF2043 UHF power LDMOS transistor DISCRETE SEMICONDUCTORS. Objective specification Supersedes data of 2000 Feb 17.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D438 Supersedes data of 2000 Feb 17 2000 Feb 23 FEATURES High power gain Easy power control Excellent ruggedness Source on mounting base eliminates DC
More informationDATA SHEET. BLF1043 UHF power LDMOS transistor DISCRETE SEMICONDUCTORS. Objective specification Supersedes data of 2000 Feb 17.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D438 Supersedes data of 2000 Feb 17 2000 Feb 23 FEATURES High power gain Easy power control Excellent ruggedness Source on mounting base eliminates DC
More informationDATA SHEET. PUMD3 NPN/PNP resistor-equipped transistors DISCRETE SEMICONDUCTORS Apr 13. Product specification Supersedes data of 1998 Nov 26
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 NPN/PNP resistor-equipped transistors Supersedes data of 1998 Nov 26 1999 Apr 13 FEATURES Transistors with different polarity and built-in bias
More informationDATA SHEET. BC849; BC850 NPN general purpose transistors DISCRETE SEMICONDUCTORS Apr 08. Product specification Supersedes data of 1998 Aug 06
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 Supersedes data of 1998 Aug 06 1999 Apr 08 FEATURES Low current (max. 100 ma) Low voltage (max. 45 V). APPLICATIONS General purpose switching and
More informationDATA SHEET. PDTC114ET NPN resistor-equipped transistor DISCRETE SEMICONDUCTORS Apr 15. Product specification Supersedes data of 1998 Nov 26
DISCRETE SEMICONDUCTORS DATA SHEET halfpage M3D088 Supersedes data of 998 Nov 26 999 Apr 5 FEATURES Built-in bias resistors R and R2 (typ. 0 kω each) Simplification of circuit design Reduces number of
More informationDATA SHEET. BST76A N-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS Jun 20
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of April 1995 File under Discrete Semiconductors, SC13b 1997 Jun 20 FEATURES Direct interface to C-MOS, TTL, etc. High-speed switching No secondary breakdown.
More informationDATA SHEET. 2N1613 NPN medium power transistor DISCRETE SEMICONDUCTORS Apr 11
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 11 FEATURES Low current (max. 500 ma) Low voltage (max. 50 V).
More informationDISCRETE SEMICONDUCTORS DATA SHEET. BST72A N-channel vertical D-MOS transistor. Product specification File under Discrete Semiconductors, SC13b
DISCRETE SEMICONDUCTORS DATA SHEET N-channel vertical D-MOS transistor File under Discrete Semiconductors, SC3b April 995 DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in TO-92 variant
More informationDATA SHEET. BSS84 P-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS Jun 18
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 1995 Apr 7 File under Discrete Semiconductors, SC13b 1997 Jun 18 FEATURES Low threshold voltage Direct interface to C-MOS, TTL, etc. High-speed switching
More informationDATA SHEET. 2N4036 PNP switching transistor DISCRETE SEMICONDUCTORS Jun 19
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jun 19 FEATURES High current (max. 1 A) Low voltage (max. 65 V).
More informationDATA SHEET. PZT3906 PNP switching transistor DISCRETE SEMICONDUCTORS Apr 14. Product specification Supersedes data of 1997 May 27
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 Supersedes data of 1997 May 27 1999 Apr 14 FEATURES Low current (max. 100 ma) Low voltage (max. 40 V). APPLICATIONS High-speed switching. PINNING
More informationDATA SHEET. BCW60 series NPN general purpose transistors DISCRETE SEMICONDUCTORS Apr 22. Product specification Supersedes data of 1997 Mar 10
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 Supersedes data of 1997 Mar 10 1999 Apr 22 FEATURES Low current (max. 100 ma) Low voltage (max. 32 V). APPLICATIONS General purpose switching and
More informationDISCRETE SEMICONDUCTORS DATA SHEET
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1997 Jun 02 1999 Apr 27 FEATURES High current (max. 600 ma) Low voltage (max. 60 V). APPLICATIONS Switching and linear amplification.
More informationDATA SHEET. BAT120 series Schottky barrier double diodes DISCRETE SEMICONDUCTORS Jan 21
DISCRETE SEMICONDUCTORS DATA SHEET halfpage M3D087 File under Discrete Semiconductors, SC01 1998 Jan 21 FEATURES Low switching losses Capability of absorbing very high surge current Fast recovery time
More informationDATA SHEET. BSR15; BSR16 PNP switching transistors DISCRETE SEMICONDUCTORS Apr 15. Product specification Supersedes data of 1997 May 14
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 Supersedes data of 1997 May 14 1999 Apr 15 FEATURES PINNING High current (max. 600 ma) Low voltage (max. 60 V). APPLICATIONS Medium power switching.
More informationDATA SHEET. PHP1025 P-channel enhancement mode MOS transistor DISCRETE SEMICONDUCTORS
DISCRETE SEMICONDUCTORS DATA SHEET File under Discrete Semiconductors, SC13b 1998 Feb 18 FEATURES Very low R DSon at low threshold High-speed switching No secondary breakdown Direct interface to C-MOS,
More informationDATA SHEET. BD132 PNP power transistor DISCRETE SEMICONDUCTORS Mar 04
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 04 FEATURES High current (max. 3 A) Low voltage (max. 45 V).
More informationDATA SHEET. BC546; BC547 NPN general purpose transistors DISCRETE SEMICONDUCTORS Apr 15. Product specification Supersedes data of 1997 Mar 04
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1997 Mar 04 1999 Apr 15 FEATURES Low current (max. 100 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and
More informationDATA SHEET. BFR53 NPN 2 GHz wideband transistor DISCRETE SEMICONDUCTORS Oct 28
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of September 1995 File under Discrete Semiconductors, SC14 1997 Oct 28 FEATURES PINNING Very low intermodulation distortion Very high power gain. APPLICATIONS
More informationDATA SHEET. PMBT3904 NPN switching transistor DISCRETE SEMICONDUCTORS Apr 27. Product specification Supersedes data of 1997 May 20
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 Supersedes data of 1997 May 20 1999 Apr 27 FEATURES Low current (max. 100 ma) Low voltage (max. 40 V). APPLICATIONS Telephony and professional communication
More informationDATA SHEET. BSP15; BSP16 PNP high-voltage transistors DISCRETE SEMICONDUCTORS Apr 09
DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D087 Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 09 FEATURES High voltage (max. 350 V). APPLICATIONS Switching
More informationDATA SHEET. BFR30; BFR31 N-channel field-effect transistors DISCRETE SEMICONDUCTORS
DISCRETE SEMICONDUCTORS DATA SHEET BFR3; BFR31 Supersedes data of April 1991 File under Discrete Semiconductors, SC7 1997 Dec 5 BFR3; BFR31 DESCRIPTION Planar epitaxial symmetrical junction N-channel field-effect
More informationDATA SHEET. PHN1013 N-channel enhancement mode MOS transistor DISCRETE SEMICONDUCTORS Jun 20
DISCRETE SEMICONDUCTORS DATA SHEET File under Discrete Semiconductors, SC13b 1997 Jun 20 FEATURES Very low on-state resistance. APPLICATIONS DC to DC converters General purpose switching applications.
More informationDATA SHEET. BF419 NPN high-voltage transistor DISCRETE SEMICONDUCTORS Apr 09
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 09 FEATURES Low current (max. 100 ma) High voltage (max. 250
More informationPHT4NQ10LT. 1. Description. 2. Features. 3. Applications. 4. Pinning information. N-channel enhancement mode field-effect transistor
MD87 Rev. September Product specification. Description in a plastic package using TrenchMOS technology. Product availability: in SOT.. Features TrenchMOS technology Fast switching Low on-state resistance
More informationDATA SHEET. BC807; BC808 PNP general purpose transistors DISCRETE SEMICONDUCTORS Feb 28
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Feb 28 FEATURES High current (max. 500 ma) Low voltage (max. 45
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
More informationDATA SHEET. BFQ256; BFQ256A PNP video transistors DISCRETE SEMICONDUCTORS
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of November 1992 File under Discrete Semiconductors, SC05 1997 Oct 02 FEATURES High breakdown voltages Low output capacitance High gain bandwidth Good
More informationDATA SHEET. KMZ10A Magnetic field sensor DISCRETE SEMICONDUCTORS Mar 24
DISCRETE SEMICONDUCTORS DATA SHEET M3D329 Supersedes data of 1996 Nov 8 File under Discrete Semiconductors, SC17 1998 Mar 2 DESCRIPTION The is an extremely sensitive magnetic field sensor, employing the
More informationDATA SHEET. 2N2219; 2N2219A NPN switching transistors DISCRETE SEMICONDUCTORS Sep 03
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 Supersedes data of 1997 May 07 File under Discrete Semiconductors, SC04 1997 Sep 03 FEATURES High current (max. 800 ma) Low voltage (max. 40 V).
More informationDATA SHEET. 2N4401 NPN switching transistor DISCRETE SEMICONDUCTORS May 07
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 07 FEATURES High current (max. 600 ma) Low voltage (max. 40
More informationDATA SHEET. BC556; BC557; BC558 PNP general purpose transistors DISCRETE SEMICONDUCTORS Mar 27
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 27 FEATURES PINNING Low current (max. 100 ma) Low voltage (max.
More informationDATA SHEET. BSR17A NPN switching transistor DISCRETE SEMICONDUCTORS Jun 02
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jun 02 FEATURES Low current (max. 100 ma) Low voltage (max. 40 V).
More informationPSMN K. 1. Description. 2. Features. 3. Applications. 4. Pinning information. N-channel enhancement mode field-effect transistor
Rev. 6 January 2 Product specification. Description SiliconMX products use the latest Philips TrenchMOS 2 technology to achieve the lowest possible on-state resistance in a SOT96- (SO8) package. Product
More informationDATA SHEET. BST84 N-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS
查询 供应商 捷多邦, 专业 PCB 打样工厂,24 小时加急出货 DISCRETE SEMICONDUCTORS DATA SHEET N-channel enhancement mode vertical File under Discrete Semiconductors, SC13b April 1995 DESCRIPTION N-channel vertical in SOT89 envelope
More informationDATA SHEET. BC846W; BC847W; BC848W NPN general purpose transistors DISCRETE SEMICONDUCTORS Mar 27
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 27 FEATURES Low current (max. 100 ma) Low voltage (max. 65 V).
More informationDATA SHEET. BYD17 series General purpose controlled avalanche rectifiers DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1996 Sep 26
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D2 Supersedes data of 996 Sep 26 999 Nov FEATURES Glass passivated High maximum operating temperature Low leakage current Excellent stability Guaranteed
More informationDATA SHEET. BGA2031/1 MMIC variable gain amplifier DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2000 Mar 02.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BGA231/1 Supersedes data of 2 Mar 2 21 Feb 5 BGA231/1 FEATURES High gain Excellent adjacent channel power rejection Small SMD package Low dissipation.
More informationDATA SHEET. BF908WR N-channel dual-gate MOS-FET. Philips Semiconductors DISCRETE SEMICONDUCTORS Apr 25
DISCRETE SEMICONDUCTORS DATA SHEET File under Discrete Semiconductors, SC7 1995 Apr 25 FEATURES High forward transfer admittance Short channel transistor with high forward transfer admittance to input
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 27 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 217 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
More informationDATA SHEET. BUT18F; BUT18AF Silicon diffused power transistors DISCRETE SEMICONDUCTORS Jun 11
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 1997 Aug 13 1999 Jun 11 DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT186 package with electrically isolated
More informationDATA SHEET. BYD37 series Fast soft-recovery controlled avalanche rectifiers DISCRETE SEMICONDUCTORS
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D121 Supersedes data of 1996 Jun 5 1999 Nov 16 FEATURES Glass passivated High maximum operating temperature Low leakage current Excellent stability Guaranteed
More informationTrenchMOS technology Very fast switching Logic level compatible Subminiature surface mount package.
M3D88 Rev. 2 2 November 21 Product data 1. Description in a plastic package using TrenchMOS 1 technology. Product availability: in SOT23. 2. Features TrenchMOS technology Very fast switching Logic level
More informationPHT6N06T. 1. Product profile. 2. Pinning information. TrenchMOS standard level FET. 1.1 Description. 1.2 Features. 1.
M3D87 Rev. 2 3 February 23 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability: in SOT223.
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 217 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
More informationDATA SHEET. BCY78; BCY79 PNP switching transistors DISCRETE SEMICONDUCTORS Jun 18
DISCRETE SEMICONDUCTORS DATA SHEET M3D125 Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jun 18 FEATURES Low current (max. 100 ma) Low voltage (max. 45 V). APPLICATIONS
More informationTrenchMOS ultra low level FET
M3D32 Rev. 1 27 September 22 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability: in SOT457 (TSOP6). 2.
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 217 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
More information2N7002T. 1. Product profile. 2. Pinning information. N-channel TrenchMOS FET. 1.1 General description. 1.2 Features. 1.
Rev. 1 17 November 25 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features
More informationN-channel µtrenchmos ultra low level FET. Top view MBK090 SOT416 (SC-75)
M3D73 Rev. 3 March 24 Product data. Product profile. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology..2 Features Surface mounted package Low
More informationDATA SHEET. BUX84; BUX85 Silicon diffused power transistors DISCRETE SEMICONDUCTORS Aug 13
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of February 996 File under Discrete Semiconductors, SC06 997 Aug 3 DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a TO-220AB
More informationIRFR Description. 2. Features. 3. Applications. 4. Pinning information. N-channel enhancement mode field effect transistor
M3D3 Rev. 4 August Product data. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability: in SOT48 (D-PAK).. Features Fast switching
More informationPMV56XN. 1. Product profile. 2. Pinning information. µtrenchmos extremely low level FET. 1.1 Description. 1.2 Features. 1.
M3D88 Rev. 2 24 June 24 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features TrenchMOS technology
More informationPMV40UN. 1. Product profile. 2. Pinning information. TrenchMOS ultra low level FET. 1.1 Description. 1.2 Features. 1.
M3D88 Rev. 1 5 August 23 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability: in SOT23.
More information2N7002F. 1. Product profile. 2. Pinning information. N-channel TrenchMOS FET. 1.1 General description. 1.2 Features. 1.
Rev. 3 28 April 26 Product data sheet. Product profile. General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology..2 Features Logic level
More informationPMN40LN. 1. Description. 2. Features. 3. Applications. 4. Pinning information. TrenchMOS logic level FET
M3D32 Rev. 1 13 November 22 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. Product availability: in SOT457 (TSOP6). 2.
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 27 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and
More informationBF545A; BF545B; BF545C
Rev. 3 5 August 24 Product data sheet. Product profile. General description N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. CAUTION This device is sensitive to electrostatic
More informationµtrenchmos standard level FET Low on-state resistance in a small surface mount package. DC-to-DC primary side switching.
M3D88 Rev. 2 19 February 23 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability: in
More informationPMV65XP. 1. Product profile. 2. Pinning information. P-channel TrenchMOS extremely low level FET. 1.1 General description. 1.
Rev. 1 28 September 24 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode field effect transistor in a plastic package using TrenchMOS technology. 1.2 Features Low
More informationDATA SHEET. BC856; BC857; BC858 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 12
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D88 Supersedes data of 1999 Apr 12 22 Feb 4 FEATURES Low current (max. 1 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification.
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 217 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
More informationDATA SHEET. BC846W; BC847W; BC848W NPN general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 23
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D12 Supersedes data of 1999 Apr 23 22 Feb 4 FEATURES Low current (max. 1 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification.
More informationDATA SHEET. PBSS4540Z 40 V low V CEsat NPN transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Jul Nov 14.
DISCRETE SEMICONDUCTORS DATA SHEET age M3D087 PBSS4540Z 40 V low V CEsat NPN transistor Supersedes data of 2001 Jul 24 2001 Nov 14 FEATURES Low collector-emitter saturation voltage High current capabilities
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 27 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and
More informationPSMN002-25P; PSMN002-25B
PSMN2-25P; PSMN2-25B Rev. 1 22 October 21 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability: PSMN2-25P
More informationDATA SHEET. BUW11F; BUW11AF Silicon diffused power transistors DISCRETE SEMICONDUCTORS Aug 14
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 14 DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a
More informationDISCRETE SEMICONDUCTORS DATA SHEET M3D071. BAT74 Schottky barrier double diode. Product specification Supersedes data of 1996 Mar 19.
DISCRETE SEMICONDUCTORS DATA SHEET M3D07 Supersedes data of 996 Mar 9 200 Sep 05 FEATURES Low forward voltage Guard ring protected Small plastic SMD package. APPLICATIONS Ultra high-speed switching Voltage
More informationPSMN004-60P/60B. PSMN004-60P in SOT78 (TO-220AB) PSMN004-60B in SOT404 (D 2 -PAK).
Rev. 1 26 April 22 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. Product availability: PSMN4-6P in SOT78 (TO-22AB) PSMN4-6B
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 217 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
More informationDATA SHEET. BF909WR N-channel dual-gate MOS-FET DISCRETE SEMICONDUCTORS Sep 05
DISCRETE SEMICONDUCTORS DATA SHEET BF99WR Supersedes data of 1995 Apr 25 File under Discrete Semiconductors, SC7 1997 Sep 5 BF99WR FEATURES Specially designed for use at 5 supply voltage Short channel
More informationSI Product profile. 2. Pinning information. N-channel TrenchMOS logic level FET. 1.1 Description. 1.2 Features. 1.
M3D35 Rev. 2 7 February 24 Product data. Product profile. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology..2 Features Low gate charge Low
More informationPMWD16UN. 1. Product profile. 2. Pinning information. Dual N-channel µtrenchmos ultra low level FET. 1.1 General description. 1.
Rev. 2 24 March 25 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 217 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
More informationDATA SHEET. BC369 PNP medium power transistor; 20 V, 1 A DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Nov 20.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 23 Nov 2 24 Nov 5 FEATURES High current Two current gain selections. APPLICATIONS Linear voltage regulators High side switches
More informationDATA SHEET. BC846; BC847; BC848 NPN general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2002 Feb 04
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 22 Feb 4 24 Feb 6 FEATURES Low current (max. 1 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification. PINNING PIN 1
More informationDATA SHEET. PBSS5350D 50 V low V CEsat PNP transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Jul Nov 13.
DISCRETE SEMICONDUCTORS DATA SHEET age M3D302 PBSS5350D 50 V low V CEsat PNP transistor Supersedes data of 2001 Jul 13 2001 Nov 13 FEATURES Low collector-emitter saturation voltage High current capability
More informationDISCRETE SEMICONDUCTORS DATA SHEET. PSMN005-55B; PSMN005-55P N-channel logic level TrenchMOS (TM) transistor
DISCRETE SEMICONDUCTORS DATA SHEET N-channel logic level TrenchMOS (TM) transistor October 1999 FEATURES SYMBOL QUICK REFERENCE DATA Trench technology Very low on-state resistance Fast switching Low thermal
More informationPHP/PHD3055E. TrenchMOS standard level FET. Product availability: PHP3055E in SOT78 (TO-220AB) PHD3055E in SOT428 (D-PAK).
PHP/PHD355E Rev. 6 25 March 22 Product data 1. Description N-channel standard level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability: PHP355E in SOT78
More informationDATA SHEET. BCP69 PNP medium power transistor; 20 V, 1 A DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2002 Nov 15.
DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D087 Supersedes data of 2002 Nov 15 2003 Nov 25 FEATURES High current Three current gain selections 1.4 W total power dissipation. APPLICATIONS Linear
More informationPHP/PHB/PHD55N03LTA. TrenchMOS Logic Level FET
Rev. 4 4 September 22 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. Product availability: PHP55N3LTA in a SOT78 (TO-22AB)
More informationDISCRETE SEMICONDUCTORS DATA SHEET. book, halfpage M3D302. PBSS4240DPN 40 V low V CEsat NPN/PNP transistor. Product specification 2003 Feb 20
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D32 PBSS424DPN 4 V low V CEsat NPN/PNP transistor 23 Feb 2 FEATURES Low collector-emitter saturation voltage V CEsat High collector current capability
More information