DATA SHEET. BSS89 N-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS Apr 24
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1 DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 1997 Jun 20 File under Discrete Semiconductors, SC13b 1998 Apr 24
2 FEATURES Direct interface to C-MOS, TTL, etc. High-speed switching No secondary breakdown. APPLICATIONS Line current interruptor in telephone sets Relay, high-speed and line transformer drivers. DESCRIPTION in a TO-92 variant package. PINNING - TO-92 variant PIN SYMBOL DESCRIPTION 1 g gate 2 d drain 3 s source handbook, halfpage d g MAM146 s Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V DS drain-source voltage (DC) 200 V V GSO gate-source voltage (DC) open drain ±20 V I D drain current (DC) 300 ma P tot total power dissipation T amb 25 C 1 W R DSon drain-source on-state resistance I D = 400 ma; V GS =10V Ω y fs forward transfer admittance I D = 400 ma; V DS = 25 V ms 1998 Apr 24 2
3 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V DS drain-source voltage (DC) 200 V V GSO gate-source voltage (DC) open drain ±20 V I D drain current (DC) 300 ma I DM peak drain current 1.2 A P tot total power dissipation T amb 25 C; note 1 1 W T stg storage temperature C T j junction temperature 150 C THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-a thermal resistance from junction to ambient note K/W Note to the Limiting values and Thermal characteristics 1. Device mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for drain lead minimum mm. CHARACTERISTICS T j =25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V (BR)DSS drain-source breakdown voltage V GS = 0; I D = 250 µa 200 V V GSth gate-source threshold voltage V DS =V GS ; I D = 1 ma V I DSS drain-source leakage current V DS = 60 V; V GS =0 200 na V DS = 200 V; V GS = µa I GSS gate leakage current V DS = 0; V GS = ±20 V ±100 na R DSon drain-source on-state resistance V GS =10V; I D = 400 ma Ω y fs forward transfer admittance I D = 400 ma; V DS = 25 V ms C iss input capacitance V DS = 25 V; V GS = 0; f = 1 MHz 45 pf C oss output capacitance V DS = 25 V; V GS = 0; f = 1 MHz 15 pf C rss reverse transfer capacitance V DS = 25 V; V GS = 0; f = 1 MHz 3.5 pf Switching times (see Figs 2 and 3) t on turn-on time V GS =0to10V; V DD =50V; 5 ns I D = 250 ma t off turn-off time V GS =10to0V; V DD =50V; I D = 250 ma 15 ns 1998 Apr 24 3
4 handbook, halfpage V DD = 50 V handbook, halfpage 90 % INPUT 10 % 10 V 0 V 50 Ω I D MSA631 OUTPUT 90 % 10 % t on t off MBB692 Fig.2 Switching time test circuit. Fig.3 Input and output waveforms Apr 24 4
5 PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads (on-circle) SOT54 variant c L 2 E d A L b 1 D 2 e 1 e 3 b 1 L mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b 1 c D d E e e 1 L L 1 (1) max L 2 max mm Notes 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE SOT54 variant TO-92 variant SC Apr 24 5
6 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale Apr 24 6
7 NOTES 1998 Apr 24 7
8 a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel , Fax Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel , Fax Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, MINSK, Tel , Fax Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel , Fax Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel , Fax Colombia: see South America Czech Republic: see Austria Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel , Fax Finland: Sinikalliontie 3, FIN ESPOO, Tel , Fax France: 4 Rue du Port-aux-Vins, BP317, SURESNES Cedex, Tel , Fax Germany: Hammerbrookstraße 69, D HAMBURG, Tel , Fax Greece: No. 15, 25th March Street, GR TAVROS/ATHENS, Tel /239, Fax Hungary: see Austria India: Philips INDIA Ltd, Shivsagar Estate, A Block, Dr. Annie Besant Rd. Worli, MUMBAI , Tel , Fax Indonesia: see Singapore Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel , Fax Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel , Fax Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, MILANO, Tel , Fax Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108, Tel , Fax Korea: Philips House, Itaewon-dong, Yongsan-ku, SEOUL, Tel , Fax Malaysia: No. 76 Jalan Universiti, PETALING JAYA, SELANGOR, Tel , Fax Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel , Fax New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel , Fax Norway: Box 1, Manglerud 0612, OSLO, Tel , Fax Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel , Fax Poland: Ul. Lukiska 10, PL WARSZAWA, Tel , Fax Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, MOSCOW, Tel , Fax Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel , Fax Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel , Fax South America: Rua do Rocio 220, 5th floor, Suite 51, São Paulo, SÃO PAULO - SP, Brazil, Tel , Fax Spain: Balmes 22, BARCELONA, Tel , Fax Sweden: Kottbygatan 7, Akalla, S STOCKHOLM, Tel , Fax Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel , Fax Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel , Fax Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel , Fax Turkey: Talatpasa Cad. No. 5, GÜLTEPE/ISTANBUL, Tel , Fax Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, KIEV, Tel , Fax United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel , Fax United States: 811 East Arques Avenue, SUNNYVALE, CA , Tel Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, BEOGRAD, Tel , Fax For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax Internet: Philips Electronics N.V SCA54 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands /00/03/pp8 Date of release: 1998 Apr 24 Document order number:
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Rev. 6 January 2 Product specification. Description SiliconMX products use the latest Philips TrenchMOS 2 technology to achieve the lowest possible on-state resistance in a SOT96- (SO8) package. Product
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 217 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 27 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 217 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
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More informationDATA SHEET. BYD17 series General purpose controlled avalanche rectifiers DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1996 Sep 26
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D2 Supersedes data of 996 Sep 26 999 Nov FEATURES Glass passivated High maximum operating temperature Low leakage current Excellent stability Guaranteed
More informationDATA SHEET. 74HC1G125; 74HCT1G125 Bus buffer/line driver; 3-state INTEGRATED CIRCUITS Nov 10
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More informationDISCRETE SEMICONDUCTORS DATA SHEET M3D076. BLF544 UHF power MOS transistor Jan 21. Product specification Supersedes data of October 1992
DISCRETE SEMICONDUCTORS DATA SHEET M3D76 Supersedes data of October 1992 1998 Jan 21 FEATURES High power gain Easy power control Good thermal stability Gold metallization ensures excellent reliability
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DISCRETE SEMICONDUCTORS BFG43W Supersedes data of 1997 Oct 29 File under Discrete Semiconductors, SC14 1998 Mar 11 BFG43W FEATURES Low current Very high power gain Low noise figure High transition frequency
More informationDATA SHEET. BSP304; BSP304A P-channel enhancement mode vertical D-MOS transistors. Philips Semiconductors DISCRETE SEMICONDUCTORS.
DISCREE SEMICONDUCORS DAA SHEE BSP34; BSP34A File under Discrete Semiconductors, SC7 995 Apr 7 Philips Semiconductors BSP34; BSP34A FEAURES Direct interface to C-MOS, L etc. High speed switching No secondary
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M3D88 Rev. 2 2 November 21 Product data 1. Description in a plastic package using TrenchMOS 1 technology. Product availability: in SOT23. 2. Features TrenchMOS technology Very fast switching Logic level
More informationPHT6N06T. 1. Product profile. 2. Pinning information. TrenchMOS standard level FET. 1.1 Description. 1.2 Features. 1.
M3D87 Rev. 2 3 February 23 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability: in SOT223.
More informationN-channel µtrenchmos ultra low level FET. Top view MBK090 SOT416 (SC-75)
M3D73 Rev. 3 March 24 Product data. Product profile. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology..2 Features Surface mounted package Low
More informationDATA SHEET. BAS40 series Schottky barrier (double) diodes DISCRETE SEMICONDUCTORS Apr 28. Product specification Supersedes data of 1997 Oct 24
DISCRETE SEMICONDUCTORS DT SHEET age MD088 MD07 Supersedes data of 997 Oct 4 999 pr 8 FETURES Low forward voltage Guard ring protected Small plastic SMD package Low diode capacitance. PPLICTIONS Ultra
More information2N7002T. 1. Product profile. 2. Pinning information. N-channel TrenchMOS FET. 1.1 General description. 1.2 Features. 1.
Rev. 1 17 November 25 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features
More information2N7002F. 1. Product profile. 2. Pinning information. N-channel TrenchMOS FET. 1.1 General description. 1.2 Features. 1.
Rev. 3 28 April 26 Product data sheet. Product profile. General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology..2 Features Logic level
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M3D32 Rev. 1 27 September 22 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability: in SOT457 (TSOP6). 2.
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More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 217 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
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M3D88 Rev. 2 19 February 23 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability: in
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More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 27 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and
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Rev. 1 26 April 22 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. Product availability: PSMN4-6P in SOT78 (TO-22AB) PSMN4-6B
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More informationPHP/PHD3055E. TrenchMOS standard level FET. Product availability: PHP3055E in SOT78 (TO-220AB) PHD3055E in SOT428 (D-PAK).
PHP/PHD355E Rev. 6 25 March 22 Product data 1. Description N-channel standard level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability: PHP355E in SOT78
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 217 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
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M3D35 Rev. 2 7 February 24 Product data. Product profile. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology..2 Features Low gate charge Low
More informationDATA SHEET. PH2369 NPN switching transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr Oct 11.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1999 Apr 27 2004 Oct 11 FEATURES Low current (max. 200 ma) Low voltage (max. 15 V). APPLICATIONS High-speed switching. PINNING
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