EFFICIENT MULTI-PHYSICS MODELING OF THE DYNAMIC RESPONSE OF RF-MEMS SWITCHES

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1 EFFICIENT MULTI-PHYSICS MODELING OF THE DYNAMIC RESPONSE OF RF-MEMS SWITCHES Jeroen Bielen 1, Jiri Stulemeijer 1 1 EPCOS Netherlands Deepak Ganjoo 2, Dale Ostergaard 2, Stephen Scampoli 2 2 Ansys Inc. USA This work was supported by the Dutch Point One MEMSLAND program

2 Outline Intro RF-MEMS at EPCOS Netherlands Physics of capacitive MEMS switch FE model: Coupling of physics domains Obtaining the static solution Homogenization of surface roughness Non-linear Reynolds for fluid / large signal transient Transient results & calibration with measurement Conclusion & outlook CC 05/08 2

3 History of RF-MEMS and tuneable RF systems start RF-MEMS* Demonstration first RF-MEMS devices Customer engages in evaluation RF-MEMS Start RF-MEMS industrialization Demonstration configurable PA match Demonstration Adaptive antenna match EPCOS Netherlands Start configurable FEM system study Start adaptive antenna match Study Start FE modeling * Program started at Philips Research CC 05/08 3

4 Adaptive multi-band antenna optimized performance A plug and play antenna module frequency band configurable automatic performance optimization increased average RF output power increased battery time lower VSWR, more system margin Measurement data LB: uncorrected hand effects hand effects corrected by AdAM Actuator Error detector Control supply generation CC 05/08 5 DC DC Control Algorithm.. if <criteria> then do <action1> else do <action2> end Multiphysics modeling required

5 Introduction RF-MEMS: Application example Hand detuning effects effectively corrected AdAM Concept demonstrator AdAM-1 Measurement data LB: uncorrected hand effects hand effects corrected by AdAM-1 module CC 05/08 6

6 RF-MEMS capacitive switch Plate suspended by beams above bottom electrode covered with dielectric When a DC voltage is is supplied the plate is pulled-down thus creating a 20x larger capacitance between the electrodes CC 05/08 8

7 Finite element model: key to predictive design Capacitive switch is multi-physics problem: Bi-directional coupling between three different physics domains Non-linearities cause pull-in instability and convergence problems ELECTROSTATIC DOMAIN Force/ Pressure Force/ Pressure FLUID, SQUEEZE FILM (Gas Damping) Displacement MECHANICAL (plate, non-linear contact, initial state) Displacement, fluence THERMAL (through T- dependency of materials) CC 05/08 9

8 Directly coupled fluid-electro-mechanical model Fluid-mechanical coupling with iso-thermal non-linear compressible Reynolds equation in directly coupled element: H p H H p p H 2 + = + + p p t t p12μ x y 12 μ Rarefied gas effects taken into account by an effective viscosity Pamb Fluid domain overlaid on structural domain (blue) CC 05/08 10

9 Directly coupled electro-mechanical model Electro-mechanical coupling very efficient with transducer elements (only one mechanical DOF & 1 Volt DOF per node) C(z) of transducers from prior electrostatic simulation 2.E-03 Capacitance [pf] 1.E-03 1.E-03 1.E-03 8.E-04 6.E-04 4.E-04 2.E-04 edge mid 0.E+00 gap [µm] 0.E+00 5.E-01 1.E+00 2.E+00 2.E+00 3.E+00 3.E+00 Symmetry planes: Symmetry BC s or Rotational constraint equations CC 05/08 11

10 Electrostatic model Dummy mesh used to map charge from electrostatic mesh to nearest mechanical node allows for dissimilar meshes Electrostatic simulation repeated for various (uniform) gap heights Dummy mesh Air gap dielectric Bottom electrode substrate CC 05/08 12

11 Solving Pull-in instability: DIPIE+ Displacement iterations scheme (DIPIE) can solve pull-in instability because for every displacement there is only one voltage solution (linear) contact with dielectric Fm Fes V Voltage Unstable equilibrium Normalized gap CC 05/08 13

12 Solving Pull-in instability: DIPIE+ Finite Element implementation DIPIE+ to find static CV-curve: Consider every node to prescribe UZ displacement Search for voltage for which reaction force vanishes Node selection based on largest electrostatic pressure increment Even better: Numerical continuation = prescribed displacement CC 05/08 14

13 Multi-physics model: Validation of static solution Good agreement between measured and predicted CV curves Slope in closed state capacitance is important feature, caused by surface roughness of the contact CC 05/08 15

14 Non-linear Contact model Surface roughness is homogenized in non-linear contact model: Contact behavior pressure(displacement) can be extracted from CV curve Simulation of contact pressure-displacement using imported AFM profiles Exponential function (I.e. Greenwood model) Multi-linear approximation in gasket element Contact pressure [MPa] measured from CV curve FEM simulation with AFM profile-1 FEM simulation with AFM profile Displacement [µm] CC 05/08 17

15 Implementation of new squeeze film element in Ansys: Squeeze film theory structural DOF s added to squeeze film element to create a directly coupled fluidstructural element Isothermal non-linear compressible Reynolds equation (because of large pressure changes when closing): H p H H p p H 2 + = + + p p t t p12μ x y 12 μ Rarefied gas effects taken into account by an effective viscosity (with optional accommodation factors) as proposed by Veijola: Diffuse reflection: μ eff Kn = L0 PL L0 P p H L0 = μ p H H=gap height (=Gap0-UZ) structural DOF p=pressure (DOF) L0=molecular mean free path at P L0 µ=viscosity Kn= Knudsen number CC 05/08 18

16 Effective viscosity extracted from measurements Impedance analyzer or LCR meter used to measure Re[Y] Parasitic shunt branch de-embedded before fitting mechanical Q-factor In vacuum chamber to vary ambient pressure R0 R1 C0 C1 CC 05/08 21

17 Effective viscosity extracted from measurements Measure Q-factor for various designs, bias voltage & pressure range Simulate Q-factor s dependency on viscosity & bias voltage Q-factor insensitive to exact match of first eigenfrequency CC 05/08 22

18 Effective viscosity from measurements Small deviation from Veijola Better fit obtained by introduction of accommodation factors 1E-10 1E-11 [1] μ eff = L0 PL μ p H No holes heff [kg/um/s] 1E-12 1E-13 no_holes 1E-14 14_Holes 27_Holes [1] Veijola 1E-15 fit h=h0/(1+c1 Kn c2 ) fit with accommodation factors 1E Kn[-] holes 27 holes CC 05/08 23

19 Close/opening transient results 8x8 40V open & close transient at 0.4bar & 1bar cavity pressure FE model includes initial stress derived from interferometer profiles inertia damping CC 05/08 27

20 Linearized versus general Reynolds equation Significant difference between linearized & non-linear Reynolds Pressures clearly outside range for which linearization is valid Capacitance [pf] general Reynolds linearized Reynolds 0 0.0E E-04 time [s] 2.0E-04 CC 05/08 28

21 Conclusions Demonstrated an efficient finite element implementation & validation of squeeze film effects for prediction of transient response Rarefaction effects were quantified by extracting the effective viscosity from measurements Transient simulations show good agreement with measurements of closing and opening cycles Multiphysics simulation improves the design by reducing the opening and closing times for the capacitive switch Non-linear Reynolds equation must be used for this type of devices CC 05/08 30

22 Outlook 2020? This is what we d like to have tomorrow: Advanced non-linear multi-physics solver to handle snap-backs: Numerical-continuation e.g. Arc-length for multi-physics Non-linear materials in transient with acceptable run-times Multi-size, multi-time scale solution More multi-physics domains for reliability assessments: Charge diffusion for dielectric charging (specific for this MEMS) HF-Electro Magnetic to predict power dissipation & temperature Strain gradient crystal plasticity model (adds 18 DOF s) to handle size effects in materials (general for MEMS & NEMS) Integration of FE results in system/circuit simulation: Predict large signal system performance (e.g. ACPR ) with e.g. harmonic balance CC 05/08 31

23 Thank you! CC 05/08 32

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