7.5 NS TRIPLE HIGH VOLTAGE VIDEO AMPLIFIER. March /9
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1 FEATURE TDA. NS TRIPLE HIGH OLTAGE IDEO AMPLIFIER TRIPLE CHANNEL IDEO AMPLIFIER SUPPLY OLTAGE: 0 TYPICAL RISE AND FALL TIMEs:.ns TYPICAL BANDWIDTH: 0Mhz TYPICAL 0 OLTS OUTPUT DYNAMIC RANGE LOW POWER CONSUMPTION WELL MATCHED WITH TDA0 PREAMP FULL PIN COMPATIBILITY WITH TDA PRELIMINARY DATA DESCRIPTION The TDA is a triple video amplifier with high voltage Bipolar/CMOS/DMOS technology (BCD) for use in color monitor application. Used with TDA0 preamp in DC coupled mode, it provides for a low component, high performance and cost effective system solution. Other features include 0 x displays, pixelclock frequencies up to 00MHz, and DC or AC coupling designs. CLIPWATT (Plastic Package) ORDER CODE: TDA PIN CONNECTIONS 0 OUT GND IN CC IN GND OUT DD IN GND OUT ersion. March 000 / This is preliminary information on a new product now in development. Details are subject to change without notice.
2 TDA BLOCK DIAGRAM DD OUT GND OUT GND OUT GND 0 TDA CC ref ref ref IN IN IN ABSOLUTE MAXIMUM RATINGS Symbol Parameter alue Unit DD High Supply oltage 0 CC Low Supply oltage ESD ESD Susceptibility Human Body Model, 00pF. Discharge through.kω EIAJ Norm, 00pF. Discharge through 0Ω 0 k I OD Output Source Current (pulsed < 0µs) 0 ma I OG Output Sink Current (pulsed < 0µs) 0 ma IMax Maximum Input oltage I Min Minimum Input oltage - 0. T J Junction Temperature 0 C T STG Storage Temperature C /
3 TDA THERMAL DATA Symbol Parameter alue Unit R th (j-c) Junction-Case Thermal Resistance (Max.) C/W R th (j-a) Junction-Ambient Thermal Resistance (Typ.) C/W ELECTRICAL CHARACTERISTICS (CC =, DD = 0, Tamb = C) Symbol Parameter Test Conditions Min Typ Max Unit DD High Supply oltage (Pin ) 0 CC Low Supply oltage (Pin ) 0 I DD I CC High oltage Supply Internal DC Current Low oltage Supply Internal DC Current Note: Pulsed current width < 0µs OUT = 0 d OUT /d DD High oltage Supply Rejection OUT = 0 0. % d OUT /dtemp Output oltage Drift ersus Temperature for any Channel OUT = 0 m/ C OUT SATH OUT SATL Max. Output oltage Min. Output oltage I 0 =-0mA, () I 0 =0mA, () DD -. A R Typical ideo Gain OUT = 0 0 E lin Linearity Error < OUT < DD - % OS Overshoot % Lf g/g Low Frequency Gain Matching OUT = 0, % f=mhz R IN ideo Input Resistor OUT = 0 KΩ BW t R, t F Lf CT Hf CT Bandwidth at -db Rise and Fall Time Low Frequency Crosstalk High Frequency Crosstalk OUT =0, C LOAD =pf R P =00Ω, OUT =0 OUT =0, C LOAD =pf R P =00Ω, OUT =0 OUT =0, C LOAD =pf R P =00Ω, OUT =0 f = MHz f = 0MHz 0 ma ma 0 MHz. ns 0 db db /
4 TDA TYPICAL APPLICATION PC Board Lay-out The best performance is obtained with a carefully designed HF PC board, especially for the output and input capacitors. Rise/fall time and bandwidth are measured on a 0pF load. The best rise/fall time and bandwidth results will be obtained with low Rp resistor value while the best CRT arcing protection will be obtained by a righ Rp resistor value. Finally a value between 0 and 00Ω is agood compromise. Power Dissipation The power dissipation is the sum of the DC and the dynamic dissipation. As the feedback resistors are integrated, the DC power dissipation (capacitive load) can be estimated by: P STAT = DD.I DD + CC.I CC The dynamic dissipation in worst case (full bandwidth and black pixel/white pixel picture - Note ) is: P DYN = DD.C L. OUT(PP).f.K where f is the video frequency and K the active line duration / total duration. Example: for DD = 0, CC =, OUT =0 PP, I DD = ma, I CC = 0mA, f IDEO = 0MHz, C L = pf and K = 0.. We have: P STAT =.W and P DYN =.0W Therefore: P tot =.W. Note: This worst thermal case must be considered only for TJmax calculation. Nevertheless, during the average life of the circuit, the conditions are very close to the white picture conditions. Figure. CC DD 0 Ω TDA CC DD IN OUT R P C L Ω GND IN OUT R P C L Ω GND IN OUT R P 0 C L GND /
5 TDA Figure. TDA/ - TDA0 - Demonstration Board: Silk Screen and Trace (scale :) /
6 TDA Figure. TDA/ - TDA0 - Demonstration Board Schematic A B C D E R0 00R HsOut R 00R C() 00pF R 00R sout R R R 0 J D R U R0 GRN N C 00nF R R D() IN BLK 0 0 D R U transientresponse optimisation S_R FDH00 R R N D ABL HS L R 0R R C OUT RED N C 00nF 0R R R R 0.uH R/R GND 0 IN OUT BLU D R 0 C() 00nF IN R D N R pf D() GNDL CCP R CC N C 00nF R R C() FDH00 ideo R R/R C S_R IN OUT R C IN R L R 0R D 00nF R0 uf C() 00nF C()00nF GND 0R 0.uH R N GNDA GNDP 0 R pf OUT R R R R/R DD R() R CCA OUT 0 C0() C R K R C IN OSD SCA GND 00nF/ 0.uF/0 D() R R K FDH00 OSD SCL OUT R pf R S_R L R 0R 0 OSD FBLK TDA/ 0R 0.uH C 0 R TDA0 00pF Heater 0 J0 GND B H C F() C 0R 0nF/ 00 J C C H uf IC 00pF C 0 GND_CRT R J uf J J F() G G uf C C 00nF/ 0 GND G G 0nF/ K Heater J Power R 0R G C0 F() Notes: G.nF/k : All capacitorsfollowed by () are decouplingcapacitors which must be connectedas close as possible to the device Supply s Out : The purpose of all componentsfollowedby () is to ensure a good protectionagainst overvoltage(arcing protection) HsOut Title CRT with TDA0 + TDA/ Size DocumentNumber Rev Custom ersion. A B C D Wednesday, February,000 Date: Sheet of E /
7 TDA PACKAGE MECHANICAL DATA PIN - CLIPWATT C A S H H H L L L R R L R R D R R B E M M lead# G G G F Dimensions Millimeters Inches Min. Typ. Max. Min. Typ. Max. A B C D E F G G H H H () L L L () L M M R. 0.0 R /
8 TDA Dimensions Note: Millimeters Inches Min. Typ. Max. Min. Typ. Max. R R S deg. 0deg. deg. deg. deg. deg. H and L do not include mold flash or protrusions Mold flash or protrusions shall not exceed 0.mm per side. /
9 TDA Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics. 000 STMicroelectronics - All Rights Reserved Purchase of I C Components of STMicroelectronics, conveys a license under the Philips I C Patent. Rights to use these components in a I C system, is granted provided that the system conforms to the I C Standard Specifications as defined by Philip s. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. /
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M54HC85 M74HC85 4-BIT MAGNITUDE COMPARATOR. HIGH SPEED tpd = 22 ns (TYP.) at VCC =5V.LOW POWER DISSIPATION I CC =4µA (MAX.) at T A =25 C.HIGH NOISE IMMUNITY VNIH =VNIL =28%VCC (MIN.) OUTPUT DRIVE CAPABILITY
Order codes Part numbers DPAK (tape and reel) PPAK (tape and reel)
800 ma fixed and adjustable output very low drop voltage regulator Features ery low dropout voltage (typ. 0.4 at 800 ma) Guaranteed output current up to 800 ma Fixed and adjustable output voltage (± 1
. HIGH SPEED .LOW POWER DISSIPATION .OUTPUT DRIVE CAPABILITY M54HCT138 M74HCT138 3 TO 8 LINE DECODER (INVERTING) t PD = 16 ns (TYP.
M54HCT138 M74HCT138 3 TO 8 LINE DECODER (INVERTING). HIGH SPEED t PD = 16 ns (TYP.) at V CC =5V.LOW POWER DISSIPATION ICC =4µAATTA =25 C.OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS BALANCED PROPAGATION DELAYS
.EXPANDABLE WITH MULTIPLE PACKAGES
HCC/HCF4555B HCC/HCF4556B DUAL BINARY TO 1 OF 4 DECODER/DEMULTIPLEXERS 4555B OUTPUTS HIGH ON SELECT 4556B OUTPUTS LOW ON SELECT.EXPANDABLE WITH MULTIPLE PACKAGES STANDARD, SYMMETRICAL OUTPUT CHAR- ACTERISTICS
. HIGH SPEED .LOW POWER DISSIPATION .HIGH NOISE IMMUNITY M54HC133 M74HC INPUT NAND GATE. tpd = 13 ns (TYP.) at VCC =5V
M54HC133 M74HC133 13 INPUT NAND GATE. HIGH SPEED tpd = 13 ns (TYP.) at VCC =5V.LOW POWER DISSIPATION I CC =1µA (MAX.) at T A =25 C.HIGH NOISE IMMUNITY VNIH =VNIL =28%VCC (MIN.) OUTPUT DRIVE CAPABILITY
TONE CONTROL AND SURROUND DIGITALLY CONTROLLED AUDIO PROCESSOR WITH AGC PS1 AGC LP L-IN1 R-IN1 L-IN2 R-IN2 L-IN3 R-IN3 L-IN4 R-IN4 L-IN5 R-IN5 L-MUX
TONE CONTROL AND SURROUND DIGITALLY CONTROLLED AUDIO PROCESSOR WITH AGC INPUT MULTIPLEXER - 5 STEREO INPUTS - SELECTABLE INPUT GAIN FOR OPTIMAL ADAPTATION TO DIFFERENT SOURCES ONE STEREO OUTPUT AGC TREBLE
TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER
TURBO 2 ULTRAAST HIGH VOLTAGE RECTIIER Table 1: Main Product Characteristics I (AV) Up to 2 x A V RRM 6 V T j 175 C V (typ).95 V t rr (max) 55 ns EATURES AND BENEITS Ultrafast switching Low reverse current
BTA/BTB24, BTA25, BTA26 and T25 Series
BTA/BTB24, BT5, BT6 and T25 Series SNUBBERLESS & STANDARD 25A TRIACS MAIN FEATURES: Symbol Value Unit I T(RMS) 25 A V DRM /V RRM 6 and 8 V I T (Q1 ) 35 to 5 ma DESCRIPTION Available either in through-hole
STTH6110TV. Ultrafast recovery - high voltage diode. Main product characteristics. Features and benefits. Order codes. Description ISOTOP ISOTOP
Ultrafast recovery - high voltage diode Main product characteristics I F(AV) V RRM T j V F (typ) t rr (typ) Features and benefits Ultrafast, soft recovery Very low conduction and switching losses High
BTA/BTB16 and T16 Series
BTA/BTB16 and T16 Series SNUBBERLESS, LOIC LEVEL & STANDARD 16A TRIACS MAIN FEATURES: Symbol Value Unit I T(RMS) 16 A V DRM /V RRM 6, 7 and 8 V I T (Q1 ) 1 to 5 ma DESCRIPTION Available either in through-hole
TN12, TS12 and TYNx12 Series
TN12, TS12 and TYNx12 Series SENSITIVE & STNDRD 12 SCRs MIN FETURES: Symbol Value Unit I T(RMS) 12 V DRM /V RRM 600 to 1000 V K I T 0.2 to 15 m DESCRIPTION vailable either in sensitive (TS12) or standard
STTH61R04TV. Ultrafast recovery diode. Main product characteristics. Features and benefits. Order codes. Description A1 K2 ISOTOP ISOTOP STTH61R04TV1
STTH61R4TV Ultrafast recovery diode Main product characteristics I F(AV) 2 x 3 A V RRM 4 V T j V F (typ) 15 C.95 V t rr (typ) 24 ns Features and benefits Ultrafast Very low switching losses High frequency
STM1831. Voltage detector with sense input and external delay capacitor. Features. Applications
Voltage detector with sense input and external delay capacitor Features Voltage monitored on separate sense input V SEN Factory-trimmed voltage thresholds in 100 mv increments from 1.6 V to 5.7 V ±2% voltage
HCC4527B HCF4527B BCD RATE MULTIPLEXER
HCC4527B HCF4527B BCD RATE MULTIPLEXER CASCADABLE IN MULTIPLES OF 4-BITS SET TO 9 INPUT AND 9 DETECT OUTPUT QUIESCENT CURRENT SPECIFIED TO 20 FOR HCC DEICE STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS
STTH60R04. Ultrafast recovery diode. Main product characteristics. Features and benefits. Description. Order codes
STTH6R4 Ultrafast recovery diode Main product characteristics I F(AV) 6 A V RRM T j 4 V 175 C A K V F (typ).95 V t rr (typ) 31 ns Features and benefits Very low switching losses High frequency and/or high
STPS3L60/Q/U POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS. 60 V Tj (max) 150 C DO-15 STPS3L60Q DO-201AD STPS3L60
SPS3L6/Q/U POWER SCHOKY RECIFIER MAIN PRODUC CHARACERISICS I F(AV) V RRM 3A 6 V j (max) 5 C V F (max).6 V FEAURES AND BENEFIS NEGLIGIBLE SWICHING LOSSES LOW HERMAL RESISANCE AVALANCHE CAPABILIY SPECIFIED
. HIGH SPEED .LOW POWER DISSIPATION .HIGH NOISE IMMUNITY M54HC148 M74HC148 8 TO 3 LINE PRIORITY ENCODER. tpd = 15 ns (TYP.
M54HC148 M74HC148 8 TO 3 LINE PRIORITY ENCODER. HIGH SPEED tpd = 15 ns (TYP.) AT VCC =5V.LOW POWER DISSIPATION I CC =4µA (MAX.) AT T A =25 C.HIGH NOISE IMMUNITY VNIH =VNIL =28%VCC (MIN.) OUTPUT DRIVE CAPABILITY
ULTRAFAST RECTIFIER PDP ENERGY RECOVERY
STTH40P03S ULTRST RECTIIER PDP ENERGY RECOVERY Table 1: Main Product Characteristics I (V) 40 V RRM 300 V V P (typ) 2.5 V I RM (typ) 5 T j 175 C V (typ) 0.9 V ETURES ND BENEITS Ultrafast recovery allowing
BAT60J SMALL SIGNAL SCHOTTKY DIODE FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD VOLTAGE DROP
BA60J SMALL SIGNAL SCHOKY DIODE FEAURES AND BENEFIS VERY SMALL CONDUCION LOSSES NEGLIGIBLE SWICHING LOSSES LOW FORWARD VOLAGE DROP A 60 K EXREMELY FAS SWICHING SURFACE MOUNED DEVICE DESCRIPION Schottky
STPS41L45CG/CT/CR LOW DROP POWER SCHOTTKY RECTIFIER. MAIN PRODUCTS CHARACTERISTICS 2x20A 45 V Tj (max) 150 C
STPS41L45CG/CT/CR LOW DROP POWER SCHOTTKY RECTIFIER MIN PRODUCTS CHRCTERISTICS I F(V) V RRM 2x2 45 V Tj (max) 15 C V F (max).47 V 2 K FETURES ND BENEFITS VERY SMLL CONDUCTION LOSSES NEGLIGIBLE SWITCHING
TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER
STTH8L6D/FP TURBO 2 ULTRFST HIGH VOLTGE RECTIFIER MIN PRODUCT CHRCTERISTICS I F(V) V RRM 8 6 V I R (max) 2 µ Tj (max) 75 C V F (max).5 V trr (max) 5 ns FETURES ND BENEFITS Ultrafast switching Low reverse
STTH8R03G/D 300V HYPERFAST RECTIFIER MAJOR PRODUCT CHARACTERISTICS. 8A 300 V I RM (typ.) Tj (max) 175 C TO-220AC STTH8R03D
STTH8R3G/D 3V HYPERFST RECTIFIER MJOR PRODUCT CHRCTERISTICS I F(V) V RRM 8 3 V I RM (typ.) 4 Tj (max) 175 C V F (max) 1.3 V trr (max) 3 ns FETURES ND BENEFITS Designed for high frequency applications.
LD29300xx. 3 A, very low drop voltage regulators. Features. Description
3 A, very low drop voltage regulators Features Very low dropout voltage (Typ. 0.4 at 3 A) Guaranteed output current up to 3 A Fixed voltage with ± 1 % tolerance at 25 C Internal current and thermal limit
TN8, TS8 and TYNx08 Series
SENSITIVE & STNDRD 8 SCRs MIN FETURES: Symbol Value Unit I T(RMS) 8 K V DRM /V RRM 600 to 1000 V I T 0.2 to 15 m DESCRIPTION vailable either in sensitive (TS8) or standard (TN8 / TYN) gate triggering levels,
STTH3R06RL TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER. Table 1: Main Product Characteristics I F(AV) V RRM
STTH3R6 TURBO 2 ULTRAAST HIGH VOLTAGE RECTIIER Table 1: Main Product Characteristics I (AV) V RRM 3 A 6 V I R (max) 1 µa T j 175 C V (typ) 1. V t rr (typ) 35 ns A K EATURES AND BENEITS Ultrafast switching
. HIGH SPEED .LOW POWER DISSIPATION .HIGH NOISE IMMUNITY M54HC4511 M74HC4511 BCD TO 7 SEGMENT LATCH/DECODER DRIVER. tpd = 28 ns (TYP.
M54HC4511 M74HC4511 BCD TO 7 SEGMENT LATCH/DECODER DRIVER. HIGH SPEED tpd = 28 (TYP.) AT VCC =5V.LOW POWER DISSIPATION I CC =4µA (MAX.) AT T A =25 C.HIGH NOISE IMMUNITY VNIH =VNIL =28%VCC (MIN.) OUTPUT
ULTRAFAST RECTIFIER PDP ENERGY RECOVERY
ULTRST RECTIIER PP ENERGY RECOVERY Table 1: Main Product Characteristics I (V) V RRM V P (typ) I RM (typ) 6 3 V 2.5 V 6 T j 175 C V (typ).9 V K ETURES N BENEITS Ultrafast recovery allowing High Sustain
BTA/BTB08 and T8 Series
BTA/BTB08 and T8 Series SNUBBERLESS, LOIC LEVEL & STANDARD 8A TRIACS MAIN FEATURES: Symbol Value Unit I T(RMS) 8 A V DRM /V RRM 600 and 800 V I T (Q1 ) 5to50 ma DPAK (T8-B) D 2 PAK (T8-) DESCRIPTION Available
TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER
STTH5R6 TURBO 2 ULTRST HIGH VOLTGE RECTIIER Table 1: Main Product Characteristics I (V) 5 V RRM 6 V T j 175 C V (typ) 1.4 V t rr (max) 4 ns ETURES ND BENEITS Ultrafast switching Low reverse recovery current
T4 Series 4A TRIACS. Table 1: Main Features Symbol Value Unit I T(RMS) 4 A. V DRM /V RRM 600 to 800 V. I GT (Q1 ) 5 to 35 ma
T4 Series SNUBBERLESS & LOIC LEVEL 4A TRIACS Table 1: Main Features Symbol Value Unit I T(RMS) 4 A V DRM /V RRM 600 to 800 V I T (Q1 ) 5 to 35 ma DESCRIPTION Based on ST s Snubberless / Logic level technology
. HIGH SPEED .LOW POWER DISSIPATION .HIGH NOISE IMMUNITY M54HC354 M74HC354 8 CHANNEL MULTIPLEXER/REGISTER (3 STATE) tpd = 24 ns (TYP.
M54HC354 M74HC354 8 CHANNEL MULTIPLEXER/REGISTER (3 STATE). HIGH SPEED tpd = 24 ns (TYP.) AT VCC =5V.LOW POWER DISSIPATION I CC =4µA (MAX.) AT T A =25 C.HIGH NOISE IMMUNITY VNIH =VNIL =28%VCC (MIN.) OUTPUT
AN1542 APPLICATION NOTE
AN1542 APPLICATION NOTE THE THERMAL RUNAWAY LAW IN SCHOTTKY USED IN OR-ing APPLICATION by Y.LAUSENAZ INTRODUCTION Nowadays, some critical applications require very high available power supplies. Typically,
STTH16R04CT. Ultrafast recovery diode. Main product characteristics. Features and benefits. Description. Order codes TO-220AB TO-220FPAB
Ultrafast recovery diode Main product characteristics I F(AV) 2 X 8 A A1 A2 K V RRM 4 V T j 175 C V F (typ) t rr (typ).9 V 25 ns A1 K A2 A1 A2 K Features and benefits TO-22AB T TO-22FPAB FP Very low switching
BTA12, BTB12 and T12 Series
BTA12, BTB12 and T12 Series SNUBBERLESS, LOIC LEVEL & STANDARD 12A TRIACS Table 1: Main Features Symbol Value Unit I T(RMS) 12 A V DRM /V RRM 6 and 8 V I T (Q1 ) 5 to 5 ma A1 DESCRIPTION Available either
DO-15 DO-201AD STTH3R04Q STTH3R04
STTH3R4 Ultrafast recovery diode Features Negligible switching losses Low forward and reverse recovery times High junction temperature Description The STTH3R4 series uses ST's new 4 V planar Pt doping
. HIGH SPEED .LOW POWER DISSIPATION .HIGH NOISE IMMUNITY M54HC137 M74HC137 3 TO 8 LINE DECODER/LATCH (INVERTING) tpd = 11 ns (TYP.
M54HC137 M74HC137 3 TO 8 LINE DECODER/LATCH (INVERTING). HIGH SPEED tpd = 11 (TYP.) AT VCC =5V.LOW POWER DISSIPATION I CC =4µA (MAX.) AT T A =25 C.HIGH NOISE IMMUNITY VNIH =VNIL =28%VCC (MIN.) OUTPUT DRIVE
STPS10L60D/FP POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS. 10 A 60 V Tj (max) 150 C TO-220FPAC STPS10L60FP
SPSL6D/FP POWER SCHOKY RECIFIER MIN PRODUC CHRCERISICS I F(V) V RRM 6 V j (max) 5 C V F (max).56 V FEURES ND BENEFIS LOW FORWRD VOLGE DROP NEGLIGIBLE SWICHING LOSSES LOW HERML RESISNCE VLNCHE CPBILIY SPECIFIED
DISCRETE SEMICONDUCTORS DATA SHEET. PMBT3906 PNP switching transistor. Product specification Supersedes data of 1999 Apr 27.
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 1999 Apr 27 2004 Jan 21 FEATURES Collector current capability I C = 200 ma Collector-emitter voltage V CEO = 40 V. APPLICATIONS General amplification
AN2970 Application note
Application note Principles of capacitive touch and proximity sensing technology The objective of this document is to present the principles of capacitive sensing and charge transfer used in STMicroelectronics
. HIGH SPEED .LOW POWER DISSIPATION .HIGH NOISE IMMUNITY M74HC181 ARITHMETIC LOGIC UNIT/FUNCTION GENERATOR. tpd = 13 ns (TYP.
ARITHMETIC LOGIC UNIT/FUNCTION GENERATOR. HIGH SPEED tpd = 13 (TYP.) AT VCC =5V.LOW POWER DISSIPATION I CC =4µA (MAX.) at T A =25 C.HIGH NOISE IMMUNITY VNIH =VNIL =28%VCC (MIN.) OUTPUT DRIVE CAPABILITY
PHT6N06T. 1. Product profile. 2. Pinning information. TrenchMOS standard level FET. 1.1 Description. 1.2 Features. 1.
M3D87 Rev. 2 3 February 23 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability: in SOT223.