ST733C..L SERIES INVERTER GRADE THYRISTORS Hockey Puk Version Features Metal case with ceramic insulator International standard case TO-AC (B-PUK) All diffused design Center amplifying gate Guaranteed high dv/dt Guaranteed high di/dt High surge current capability Low thermal impedance High speed performance 940A Typical Applications Inverters Choppers Induction heating All types of force-commutated converters case style TO-AC (B-PUK) Major Ratings and Characteristics Parameters ST733C..L Units I T(AV) 940 A @ T hs 55 C I T(RMS) 1900 A @ T hs 25 C I TSM @ Hz 0 A @ 60Hz 209 A I 2 t @ Hz KA2 s @ 60Hz 1820 KA 2 s V DRM /V RRM to 800 V t q range 10 to 20 µs T J - 40 to 125 C 1
ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage V DRM /V RRM, maximum V RSM, maximum I DRM /I RRM Type number Code repetitive peak voltage non-repetitive peak voltage @ T J V V ma 04 0 ST733C..L 75 08 800 900 Current Carrying Capability Frequency I TM I TM I TM Units 180 o el 180 o el µs Hz 2 1900 3580 3 6800 5920 Hz 20 1660 3600 3130 37 3240 0Hz 1370 1070 2900 24 2120 1780 A Hz 0 370 1220 980 960 770 Recovery voltage Vr Voltage before turn-on Vd V DRM V DRM V DRM V Rise of on-state current di/dt - - - - A/µs Heatsink temperature 40 55 40 55 40 55 C Equivalent values for RC circuit 10Ω / 0.47µF 10Ω / 0.47µF 10Ω / 0.47µF On-state Conduction I T(AV) Max. average on-state current 940 (3) A conduction, half sine wave @ Heatsink temperature 55 (85) C double side (single side) cooled I T(RMS) Max. RMS on-state current 1900 DC @ 25 C heatsink temperature double side cooled I TSM Max. peak, one half cycle, 0 t = 10ms No voltage non-repetitive surge current 209 A t = 8.3ms reapplied 16800 t = 10ms % V RRM 17600 t = 8.3ms reapplied Sinusoidal half wave, I 2 t Maximum I 2 t for fusing t = 10ms No voltage Initial T J max 1820 t = 8.3ms reapplied 1410 KA 2 s t = 10ms % V RRM 1290 t = 8.3ms reapplied I 2 t Maximum I 2 t for fusing 0 KA 2 s t = 0.1 to 10ms, no voltage reapplied 2
On-state Conduction V TM Max. peak on-state voltage 1.63 I TM = 1700A, T J max, t p = 10ms sine wave pulse V T(TO)1 Low level value of threshold 1.09 (16.7% x π x I voltage T(AV) < I < π x I T(AV) ), T J V V T(TO)2 High level value of threshold 1.20 (I > π x I voltage T(AV) ), T J r Low level value of forward t1 0.32 (16.7% x π x I slope resistance T(AV) < I < π x I T(AV) ), T J mω r t2 High level value of forward 0.29 (I > π x I slope resistance T(AV) ), T J I H Maximum holding current 600 T J = 25 C, I T > 30A ma I L Typical latching current 0 T J = 25 C, V A = 12V, Ra = 6Ω, I G = 1A Switching di/dt Max. non-repetitive rate of rise T J max, V DRM = rated V DRM, I TM = 2 x di/dt 0 A/µs of turned-on current Gate pulse: 20V 20Ω, 10µs 0.5µs rise time T J = 25 C, V DM = rated V DRM, I TM = A DC, t p = 1µs t Typical delay time 1.5 d Resistive load, Gate pulse: 10V, 5Ω source µs Min Max T J max, I TM = 5A, commutating di/dt = -40A/µs t Max. turn-off time 10 20 q V R = V, t p = 0µs, dv/dt: see table in device code Blocking dv/dt Maximum critical rate of rise of T J linear to 80% V DRM, higher value 0 V/µs off-state voltage available on request I RRM Max. peak reverse and off-state 75 ma T I DRM leakage current J max, rated V DRM /V RRM applied Triggering P GM Maximum peak gate power 60 P G(AV) Maximum average gate power 10 W T J, f = Hz, d% = I GM Max. peak positive gate current 10 A T J max, t p 5ms +V GM Maximum peak positive gate voltage 20 -V GM V T J max, t p 5ms Maximum peak negative 5 gate voltage I GT Max. DC gate current required to trigger I GD Max. DC gate current not to trigger ma 20 ma V GT Max. DC gate voltage required to trigger V GD 3 Max. DC gate voltage not to trigger V 0.25 V T J = 25 C, V A = 12V, Ra = 6Ω T J max, rated V DRM applied 3
Thermal and Mechanical Specification T J Max. operating temperature range -40 to 125 T stg Max. storage temperature range -40 to 1 C R thj-hs Max. thermal resistance, 0.073 DC operation single side cooled K/W junction to heatsink 0.031 DC operation double side cooled R thc-hs Max. thermal resistance, 0.011 K/W DC operation single side cooled case to heatsink 0.005 DC operation double side cooled F Mounting force, ± 10% 14700 N () (Kg) wt Approximate weight 255 g Case style TO - AC (B-PUK) See Outline Table R thj-hs Conduction (The following table shows the increment of thermal resistence R thj-hs when devices operate at different conduction angles than DC) Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions Single Side Double Side Single Side Double Side 0.009 0.009 0.006 0.006 0.011 0.011 0.011 0.011 0.014 0.014 0.015 0.015 K/W T J 0.020 0.021 0.021 0.022 0.036 0.036 0.036 0.036 Ordering Information Table Device Code ST 73 3 C 08 L H K 1 1 2 3 4 5 6 7 8 9 10 1 - Thyristor 2 - Essential part number 3-3 = Fast turn off 4 - C = Ceramic Puk 5 - Voltage code: Code x = V RRM (See Voltage Rating Table) 6 - L = Puk Case TO-AC (B-PUK) 7 - Reapplied dv/dt code (for t q test condition) 8 -t q code 9-0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads) 1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads) 2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads) 3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads) 10 - Critical dv/dt: None = 0V/µsec (Standard value) L = 0V/µsec (Special selection) dv/dt - t q combinations available dv/dt (V/µs) 20 10 CN DN EN -- -- 12 CM DM EM FM * -- t q (µs) 15 CL DL EL FL * HL 18 CP DP EP FP HP 20 CK DK EK FK H * Standard part number. All other types available only on request. 4
Outline Table 0.7 (0.03) MIN. 34 (1.34) DIA. MAX. TWO PLACES 27 (1.06) MAX. PIN RECEPTACLE AMP. 60598-1 0.7 (0.03) MIN. 53 (2.09) DIA. MAX. 6.2 (0.24) MIN. 58.5 (2.3 ) D IA. M A X. 4.7 (0.18) 20 ± 5 2 HOLES DIA. 3.5 (0.14) x 2.5 (0.1) DEEP CREPAGE DISTANCE 36.33 (1.430) MIN. STRIKE DISTANCE 17.43 (0.686) MIN. 36.5 (1.44) Case Style TO-AC (B-PUK) All dimensions in millimeters (inches) Quote between upper and lower pole pieces has to be considered after application of Mounting Force (see Thermal and Mechanical Specification) M aximum Allow able Heatsink Tem perature ( C) 130 ST 733C..L Series 120 (Single Side Cooled) 110 R thj-hs (DC ) = 0.073 K/W 90 Cond uction Angle 80 70 60 40 0 300 0 600 700 Maximum Allow able Heatsink Temperature ( C ) 130 120 (Single Side C ooled) 110 R thj-hs (DC ) = 0.073 K/W 90 80 Conduction Period 70 60 40 30 20 DC 0 600 800 0 Average On-state Current (A) A verag e O n-state C urrent (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics 5
Maximum Allowable Heatsink Temperature ( C ) 130 120 ST7 33C..L Se rie s (Double Side Cooled) 110 R thj-h s (DC ) = 0.031 K/W 90 80 Conduction Angle 70 60 40 30 20 0 600 800 0 1 1 M axim um Allow able Heatsink Tem perature ( C ) 130 120 (Double Side C ooled) 110 R thj-hs (D C ) = 0.031 K/W 90 80 Conduction Period 70 60 40 30 DC 20 0 0 0 Av erag e O n-state C urre nt (A ) Fig. 3 - Current Ratings Characteristics Average On-state Current (A) Fig. 4 - Current Ratings Characteristics Maximum Average On-state Power Loss (W) 0 RMS Limit Conduction Angle 0 T J = 125 C 0 0 600 800 0 1 1 Maxim um Average O n-state Power Loss (W ) 0 0 RM S Lim it Conduction Angle T = 125 C J 0 0 600 800 0 1 1 Average On-state Current (A) Av erag e O n-state C urre nt (A ) Fig. 5 - On-state Power Loss Characteristics Fig. 6 - On-state Power Loss Characteristics Peak Half Sine Wave On-state Current (A) 18000 16000 10 1 00 At Any Rated Load Condition And With Rated V Applie d Following Surge. RRM Initial T J = 12 5 C @ 60 Hz 0.0083 s @ Hz 0.0 s 8000 1 10 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 7 - Maximum Non-repetitive Surge Current Single and Double Side Cooled 8000 0.01 0.1 1 Fig. 8 - Maximum Non-repetitive Surge Current Single and Double Side Cooled 6 Peak Half Sine W ave On -state C u rrent (A) 0 18000 16000 10 1 00 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of C o nd uc tion M a y No t Be Ma intaine d. Initial T J = 125 C No Voltag e Rea pplie d Rated V Reapplie d RRM P ulse Tra in D ura tio n ( s)
Instantaneous On-state Current (A) 00 0 T J = 25 C T J = 125 C 0.5 1 1.5 2 2.5 3 3.5 4 4.5 Instantaneous On-state Voltage (V) Fig. 9 - On-state Voltage Drop Characteristics Transie nt Th erm al Im pedanc e Z (K/W ) th J -hs 0.1 0.01 Steady State V alue R thj-hs = 0.073 K/W (Single Side Cooled) R thj-hs = 0.031 K/W (D ouble Side C ooled) (D C O p era t io n ) 0.001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 10 - Thermal Impedance Z thjc Characteristic M axim um Rev erse Rec ove ry C harg e - Q rr (µc) 4 3 300 2 1 ST7 33C..L Se rie s T = 125 C J I TM = A 0 A 0 A 0 10 20 30 40 60 70 80 90 Rate O f Fall Of O n-state C urren t - di/dt (A/µs) M axim um Reve rse Rec o very C urrent - Irr (A ) 2 1 I TM = A 0 A 0 A T = 125 C J 0 10 20 30 40 60 70 80 90 Rate Of Fall Of Forward Current - di/dt (A/µs) Fig. 11 - Reverse Recovered Charge Characteristics Fig. 12 - Reverse Recovery Current Characteristics Pe ak O n -state C urre nt (A ) 1E5 1E4 1E3 00 0 Snubber circuit R s = 10 ohm s C s = 0.47 µ F V D = 80% VDRM Hz Sinusoidal pulse T = 40 C C 0 00 Snubber circuit R s = 10 ohm s V D = 80% VDRM Hz Sinuso idal pulse T = 55 C C 1E2 1E1 1E2 1E3 1E4 1E41E1 1E1 1E2 1E3 1E4 Pulse Base w idth (µs) Pulse Basew idth (µs) Fig. 13 - Frequency Characteristics 7
1E 5 S nubbe r circuit R s = 10 o hms V D = 80% V DR M S T 733C..L S eries T rape zoidal puls e T C = 4 0 C di/dt = A/µs S nubber circuit R s = 10 ohms V D = 80% V DR M S T 733C..L S eries T rapezoidal pulse T C = 55 C di/ dt = A/µs 1E 4 1E 3 00 0 0 Hz 0 0 Hz 1E 2 1E 1 1E 2 1E 3 1E 1E 4 41E1E1 1 1E 2 1E 3 1E 4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 14 - Frequency Characteristics 1E 5 S nubbe r circuit R s = 10 o hms V D = 80% V DRM S T 733C..L S eries T rape zoidal puls e T C = 4 0 C di/dt = A/µs S nubber circuit R s = 10 ohms V D = 80% V DR M S T 733C..L S eries T rapezoidal pulse T C = 55 C di/dt = A/µs 1E 4 H z H z 0 0 0 1E 3 0 00 1E 2 1E 1 1E 2 1E 3 1E 1E 4 41E1E1 1 1E 2 1E 3 1E 4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 15 - Frequency Characteristics Peak On -state C urrent (A) 1E5 1E4 1E3 1E2 ST733C..L Serie s Sinusoidal pulse 2 1 0.5 0.4 0.3 5 3 20 joules per pulse 10 ST733C..L Serie s Rectangular pulse di/dt = A/µs 0.5 0.4 20 jo ule s p er pu lse 10 5 3 2 1 0.3 1E1 1E1 1E2 1E 3 1E4 1E41E1 1E1 1E2 1E3 1E4 Pulse Base w idth (µs) Pulse Base w idth (µs) Fig. 16 - Maximum On-state Energy Power Loss Characteristics 8
10 R ectangular gate puls e a) Recommended load line for rated di/dt : 20V, 10ohms ; tr<=1 µs b) Recommended load line for <=30% rated di/dt : 10V, 10ohms tr<=1 µs (a) (1) P GM = 10W, = 20ms (2) P GM = 20W, = 10ms (3) P GM = 40W, = 5ms (4) P GM = 60W, = 3.3ms (b ) 1 (1) (2) (3) (4) VGD IGD Device: Frequency Limited by PG(AV) 0.1 0.001 0.01 0.1 1 10 Ins tantaneous Gate Current (A) Fig. 17 - Gate Characteristics 9