Bulletin PD-080 08/05 60EPU04PbF 60APU04PbF Ultrafast Soft Recovery Diode Features Ultrafast Recovery 75 C Operating unction Temperature Lead-Free ("PbF" suffix) Benefits Reduced RFI and EMI Higher Frequency Operation Reduced Snubbing Reduced Parts Count Description/ Applications t rr = 50ns (typ) I F(AV) = 60Amp V R = 400V These diodes are optimized to reduce losses and EMI/ RFI in high frequency power conditioning systems. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for HF welding, power converters and other applications where switching losses are not significant portion of the total losses. Absolute Maximum Ratings Parameters Max Units V R Cathode to Anode Voltage 400 V I F(AV) Continuous Forward Current, T C = 7 C 60 A I FSM Single Pulse Forward Current, T C = 5 C 600 I FRM Maximum Repetitive Forward Current 0 T, T STG Operating unction and Storage Temperatures - 55 to 75 C Square Wave, 0kHz Case Styles 60EPU04PbF 60APU04PbF TO BASE TO BASE TO-47AC (Modified) TO-47AC
Bulletin PD-080 08/05 Electrical Characteristics @ T = 5 C (unless otherwise specified) Parameters Min Typ Max Units Test Conditions V BR, V r Breakdown Voltage, 400 - - V I R = 00µA Blocking Voltage V F Forward Voltage -.05.5 V I F = 60A - 0.87.0 V I F = 60A, T = 75 C - 0.9.0 V I F = 60A, T = 5 C I R Reverse Leakage Current - - 50 µa V R = V R Rated - - ma T = 50 C, V R = V R Rated C T unction Capacitance - 50 - pf V R = 400V L S Series Inductance -.5 - nh Measured lead to lead 5mm from package body Dynamic Recovery Characteristics @ T = 5 C (unless otherwise specified) Parameters Min Typ Max Units Test Conditions t rr Reverse Recovery Time - 50 60 ns I F = A, di F/dt = 00A/µs, V R = 0V - 85 - T = 5 C - 45 - T = 5 C I RRM Peak Recovery Current - 8.8 - A T = 5 C I F = 60A V R = 00V di F /dt = 00A/µs - 5.4 - T = 5 C Q rr Reverse Recovery Charge - 75 - nc T = 5 C - 0 - T = 5 C Thermal - Mechanical Characteristics Parameters Min Typ Max Units R thc Thermal Resistance, unction to Case 0.70 K/W R thcs Thermal Resistance, Case to Heatsink 0. Wt Weight 5.5 g 0. (oz) T Mounting Torque. (0).4 (0) N*m (lbf.in) Marking Device 60EPU04, 60APU04 Mounting Surface, Flat, Smooth and Greased
Bulletin PD-080 08/05 Instantaneous Forward Current - I F (A) 000 00 0 T = 75 C T = 5 C T = 5 C Reverse Current - I R (µa) unction Capacitance - C T (pf) 000 00 0 0. 0.0 T = 75 C 5 C 5 C 0.00 0 00 00 00 400 Reverse Voltage - V R (V) Fig. - Typical Values Of Reverse Current Vs. Reverse Voltage 000 00 T = 5 C 0 0.5.5.5 Forward Voltage Drop - V FM (V) Fig. - Typical Forward Voltage Drop Characteristics 0 0 00 000 Reverse Voltage - V R (V) Fig. - Typical unction Capacitance Vs. Reverse Voltage Thermal Impedance Z thc ( C/W) 0. D = 0.50 D = 0.0 D = 0.0 D = 0.05 D = 0.0 D = 0.0 Single Pulse (Thermal Resistance) P DM t t Notes:. Duty factor D = t/ t. Peak Tj = Pdm x ZthC + Tc 0.0 0.0000 0.000 0.00 0.0 0. 0 t, Rectangular Pulse Duration (Seconds) Fig. 4 - Max. Thermal Impedance Z thc Characteristics
Bulletin PD-080 08/05 80 00 Allowable Case Temperature ( C) 60 40 0 00 Square wave (D = 0.50) 80% Rated Vr applied DC see note () 80 0 0 40 60 80 00 Average Power Loss ( Watts ) 80 60 RMS Limit D = 0.0 D = 0.0 40 D = 0.05 D = 0.0 0 D = 0.0 D = 0.50 DC 0 0 0 40 60 80 00 Average Forward Current - IF (AV) (A) Average Forward Current - IF (AV) (A) Fig. 5 - Max. Allowable Case Temperature Vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics trr ( ns ) 00 80 60 40 0 Vr = 400V Tj = 5 C Tj = 5 C IF = 0A IF = 60A IF = 40A Qrr ( nc ) 500 000 500 000 500 Vr = 400V Tj = 5 C Tj = 5 C IF = 0A IF = 60A IF = 40A 00 000 80 500 60 00 000 di F /dt (A/µs ) Fig. 7 - Typical Reverse Recovery time vs. di F /dt 0 00 000 di F /dt (A/µs ) Fig. 8 - Typical Stored Charge vs. di F /dt () Formula used: T C = T - (Pd + Pd REV ) x R thc ; Pd = Forward Power Loss = I F(AV) x V FM @ (I F(AV) / D) (see Fig. 6); Pd REV = Inverse Power Loss = V R x I R ( - D); I R @ V R = 80% rated V R 4
Bulletin PD-080 08/05 Reverse Recovery Circuit V R = 00V 0.0 Ω dif/dt F /dt ADUST L = 70µH G D IRFP50 D.U.T. S Fig. 9- Reverse Recovery Parameter Test Circuit 0 I F t a t rr t b I RRM Q rr 4 0.5 I RRM di(rec)m/dt 5 0.75 I RRM di f F /dt /dt. di F /dt - Rate of change of current through zero crossing. I RRM - Peak reverse recovery current. t rr - Reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 I RRM and 0.50 I RRM extrapolated to zero current 4. Q rr - Area under curve defined by t rr and I RRM Q rr = t rr x I RRM 5. di (rec) M / dt - Peak rate of change of current during t b portion of t rr Fig. 0 - Reverse Recovery Waveform and Definitions 5
Bulletin PD-080 08/05 Outline Table 60EPU04PbF 5.90 (0.66) 5.0 (0.60).65 (0.44) DIA..55 (0.9) 5.0 (0.09) 4.70 (0.85).5 ( 0.098).5 ( 0.059) 0.0 (0.800) 9.70 (0.775) 5.70 (0.5) 5.0 ( 0.08) 5.50 ( 0.7) BASE COMMON 4.50 (0.77) ( PLCS.) 4.80 (0.58) 4.0 (0.559) 4.0 (0.70).70 (0.45).40 (0.056).00 (0.09) 0. 94 ( 0.40) 0.86 (0.47 ).0 (0.087) MAX. 0.80 ( 0.0) 0.40 (0.) Dimensions in millimeters and inches 60APU04PbF.40 (0.095) MAX. BASE COMMON 5.90 (0.66) 5.0 (0.60).65 (0.44) DIA..55 (0.9) 5.0 (0.09) 4.70 ( 0.85).5 ( 0.098).5 ( 0.059) 5.70 (0.5) 0.0 (0.800) 5.0 ( 0.08) 9.70 (0.775) 5.50 ( 0.7) 4.50 (0.77) ( PLCS.) 4.80 ( 0.58) 4.0 (0.559) 4.0 (0.70).70 (0.45).40 (0.056).00 (0.09) 0.94 ( 0.40).0 (0.087) MAX. 0.80 ( 0.0) 0.40 (0.).40 (0.095) MAX. 0.86 (0.47) 6
Bulletin PD-080 08/05 Marking Information EXAMPLE: THIS IS A 60EPU04 WITH ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 5, 000 IN ASSEMBLY LINE "H" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE 60EPU04 P05H 56 57 PART NUMBER DATE CODE P = LEAD-FREE YEAR 0 = 000 WEEK 5 LINE H EXAMPLE: THIS IS A 60APU04 WITH ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 5, 000 IN ASSEMBLY LINE "H" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER 60APU04 P05H 56 57 DATE CODE P = LEAD-FREE YEAR 0 = 000 WEEK 5 LINE H Ordering Information Table Device Code 60 E P U 04 PbF 4 5 6 - Current Rating (60 = 60A) - Circuit Configuration: E = Single Diode A = Single Diode, pins - Package: P = TO-47AC (Modified) 4 - Type of Silicon: U = UltraFast Recovery 5 - Voltage Rating (04 = 400V) 6 - none = Standard Production PbF = Lead-Free 7
Bulletin PD-080 08/05 Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level and Lead-Free. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: Kansas St., El Segundo, California 9045, USA Tel: (0) 5-705 TAC Fax: (0) 5-709 08/05 8
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