ST303C..C SERIES INVERTER GRADE THYRISTORS Puk Version Features Metal case with ceramic insulator International standard case TO-AB (E-PUK) All diffused design Center amplifying gate Guaranteed high dv/dt Guaranteed high di/dt High surge current capability Low thermal impedance High speed performance 6A Typical Applications Inverters Choppers Induction heating All types of force-commutated converters case style TO-AB (E-PUK) Major Ratings and Characteristics Parameters ST303C..C Units I T(AV) 6 A @ T hs 55 C I T(RMS) 11 A @ T hs 25 C I TSM @ Hz 79 A @ Hz 83 A I 2 t @ Hz 316 KA2 s @ Hz 289 KA 2 s V DRM /V RRM to 1 V t q range (*) 10 to 30 µs T - to 125 C (*) t q = 10 to µs for to 0V devices t q = 15 to 30µs for 0 to 1V devices 1
ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage V DRM /V RRM, maximum V RSM, maximum I DRM /I RRM Type number Code repetitive peak voltage non-repetitive peak voltage @ T V V ma 04 ST303C..C 08 0 900 10 0 1 12 1 1300 Current Carrying Capability Frequency Units 1 o el 1 o el µs Hz 1314 1130 70 19 6930 6270 Hz 12 10 2190 18 34 29 0Hz 900 700 1900 1590 18 15 A Hz 3 230 910 710 7 5 Recovery voltage Vr Voltage before turn-on Vd V DRM V DRM V DRM V Rise of on-state current di/dt - - - - A/µs Heatsink temperature 55 55 55 C Equivalent values for RC circuit 10Ω / 0.47µF 10Ω / 0.47µF 10Ω / 0.47µF On-state Conduction I T(AV) Max. average on-state current 6 (230) A 1 conduction, half sine wave @ Heatsink temperature 55 (85) C double side (single side) cooled I T(RMS) Max. RMS on-state current 11 DC @ 25 C heatsink temperature double side cooled I TSM Max. peak, one half cycle, 79 t = 10ms No voltage non-repetitive surge current 83 A t = 8.3ms reapplied 6690 t = 10ms % V RRM 7000 t = 8.3ms reapplied Sinusoidal half wave, I 2 t Maximum I 2 t for fusing 316 t = 10ms No voltage Initial T max 289 t = 8.3ms reapplied 224 KA 2 s t = 10ms % V RRM 4 t = 8.3ms reapplied I 2 t Maximum I 2 t for fusing 31 KA 2 s t = 0.1 to 10ms, no voltage reapplied 2
On-state Conduction V TM Max. peak on-state voltage 2.16 = 1255A, T max, t p = 10ms sine wave pulse V T(TO)1 Low level value of threshold 1.44 (16.7% x π x I voltage T(AV) < I < π x I T(AV) ), T V V T(TO)2 High level value of threshold 1.48 (I > π x I voltage T(AV) ), T r t1 Low level value of forward 0.57 (16.7% x π x I slope resistance T(AV) < I < π x I T(AV) ), T mω r High level value of forward t2 0.56 (I > π x I slope resistance T(AV) ), T I H Maximum holding current 0 T = 25 C, I T > 30A ma I L Typical latching current 0 T = 25 C, V A = 12V, Ra = 6Ω, I G = 1A Switching di/dt Max. non-repetitive rate of rise T max, V DRM = rated V 0 A/µs DRM of turned-on current = 2 x di/dt T = 25 C, V DM = rated V DRM, = A DC, t p = 1µs t Typical delay time 0.83 d Resistive load, Gate pulse: 10V, 5Ω source µs Min Max T max, = 5A, commutating di/dt = A/µs t q Max. turn-off time (*) 10 30 V R = V, t p = µs, dv/dt: see table in device code (*) t = 10 to µs for to 0V devices; t = 15 to 30µs for 0 to 1V devices. q q Blocking dv/dt Maximum critical rate of rise of T linear to % V DRM, higher value V/µs off-state voltage available on request I RRM Max. peak reverse and off-state ma T I DRM leakage current max, rated V DRM /V RRM applied Triggering P GM Maximum peak gate power P G(AV) Maximum average gate power 10 W T max, f = Hz, d% = I GM Max. peak positive gate current 10 A T max, t p 5ms +V GM Maximum peak positive gate voltage -V GM V T max, t p 5ms Maximum peak negative 5 gate voltage I GT Max. DC gate current required to trigger I GD Max. DC gate current not to trigger ma ma V GT Max. DC gate voltage required to trigger V GD 3 Max. DC gate voltage not to trigger V 0.25 V T = 25 C, V A = 12V, Ra = 6Ω T max, rated V DRM applied 3
Thermal and Mechanical Specification T Max. operating temperature range - to 125 T stg Max. storage temperature range - to 1 C R th-hs Max. thermal resistance, 0.09 DC operation single side cooled K/W junction to heatsink 0.04 DC operation double side cooled R thc-hs Max. thermal resistance, 0.0 K/W DC operation single side cooled case to heatsink 0.010 DC operation double side cooled F Mounting force, ± 10% 90 N (0) (Kg) wt Approximate weight 83 g Case style TO - AB (E-PUK) See Outline Table R th-hs Conduction (The following table shows the increment of thermal resistence R th-hs when devices operate at different conduction angles than DC) Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions Single Side Double Side Single Side Double Side 1 0.010 0.010 0.007 0.007 0.012 0.012 0.012 0.013 0.015 0.015 0.016 0.017 K/W T 0.022 0.022 0.023 0.023 0.036 0.036 0.036 0.037 Ordering Information Table Device Code ST 30 3 C 12 C H K 1 1 2 3 4 5 6 7 8 9 10 1 - Thyristor 2 - Essential part number 3-3 = Fast turn off 4 - C = Ceramic Puk 5 - Voltage code: Code x = V RRM (See Voltage Rating Table) 6 - C = Puk Case TO-AB (E-PUK) dv/dt - t q combinations available 7 - Reapplied dv/dt code (for t q test condition) dv/dt (V/µs) 8 -t q code t q (µs) 10 CN DN EN FN * HN 12 CM DM EM FM HM 9-0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads) up to 0V 15 CL DL EL FL * HL CK DK EK FK * HK 1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads) t 2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads) q (µs) 15 CL -- -- -- -- 18 CP DP -- -- -- 3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads) CK DK EK FK * HK only for 25 C D E F * H 10 - Critical dv/dt: 0/1V 30 -- DH EH FH HH None = V/µsec (Standard value) *Standard part number. All other types available only on request. L = 0V/µsec (Special selection) 4
Outline Table ANODE TO GATE CREEPAGE DISTANCE: 11.18 (0.44) MIN. STRIKE DISTANCE: 7.62 (0.30) MIN. 25.3 (0.99) DIA. MAX. 0.3 (0.01) MIN. 14.1 / 15.1 (0.56 / 0.59) 25.3 (0.99) DIA. MAX..5 (1.59) DIA. MAX. GATE TERM. FOR 1.47 (0.06) DIA. PIN RECEPTACLE 0.3 (0.01) MIN. 2 HOLES 3.56 (0.14) x 1.83 (0.07) MIN. DEEP 6.5 (0.26) 4.75 (0.19) 25 ± 5 Case Style TO-AB (E-PUK) All dimensions in millimeters (inches) 42 (1.65) MAX. 28 (1.10) Quote between upper and lower pole pieces has to be considered after application of Mounting Force (see Thermal and Mechanical Specification) M aximum Allowable Heatsink Temperature ( C ) 130 (Single Side Cooled) R th-hs (D C) = 0.09 K/W 110 90 Conduction Angle 70 1 0 1 2 300 3 Average On-state Current (A) Maxim um Allowable Heatsink Tem perature ( C) 130 110 90 70 ( S in g le Sid e C o o le d ) R th-hs(d C ) = 0.09 K/W Conduction Period 30 1 DC 0 300 0 700 Average On-state Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics 5
Maxim um Allowable Heatsink Temperature ( C) 130 (D ouble Side Cooled) 110 R th-hs (D C) = 0.04 K/W 90 Cond uction Angle 70 1 30 0 300 0 700 0 Average On-state Current (A) Maximum Allowable Heatsink Temperature ( C) 130 (Double Side Cooled) 110 R th -hs (D C ) = 0.04 K/W 90 Conduction Period 70 1 30 DC 0 0 0 0 1 Average On-state Current (A) Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics Maximum Average On-state Power Loss (W) 10 10 1 1 0 0 0 1 RMS Limit Conduction Angle T = 125 C 0 0 300 0 700 0 Maximum Average On-state Power Loss (W) 2 10 1 0 DC 1 RMS Lim it Conduction Period T = 125 C 0 0 0 0 0 1 A verag e O n-state Curre nt (A ) A ve rag e O n -state Curre nt (A ) Fig. 5 - On-state Power Loss Characteristics Fig. 6 - On-state Power Loss Characteristics Peak Half Sine Wave On-state Current (A) 7 7000 6 00 5 0 4 0 3 At An y Rated Load Con dition And With Rated V RRM Applied Following Surge. Initial T = 125 C @ Hz 0.0083 s @ 0.0 s 1 10 Number Of Equal Amplitude Half Cycle Current Pulses (N) Peak Half Sine Wave On-state Current (A) 00 7 7000 6 00 5 0 4 0 3 M axim um N on Repe titiv e Surg e C urre nt V ersus Pulse Train D uration. C on tro l Of Conduction May Not Be Maintained. In it ia l T = 1 2 5 C N o V o lt a g e R e a pp lie d Rate d V RRM Re applied 0.01 0.1 1 P uls e Tra in D ura tio n ( s) Fig. 7 - Maximum Non-repetitive Surge Current Single and Double Side Cooled Fig. 8 - Maximum Non-repetitive Surge Current Single and Double Side Cooled 6
Instantaneous On-state Current (A) 00 0 T = 25 C T = 125 C ST 303C..C Series 0 1 2 3 4 5 6 7 8 Instantaneous On-state Voltage (V) Fig. 9 - On-state Voltage Drop Characteristics T ran sie nt The rm al Im pedanc e Z th-hs (K/W ) 0.1 0.01 Steady State V alue R th-hs = 0.09 K/W (Single Side Cooled) R th -hs = 0.04 K/W (Double Side Cooled ) (DC O peration) 0.001 0.001 0.01 0.1 1 10 Square W ave Pulse D uratio n (s) Fig. 10 - Thermal Impedance Z th-hs Characteristics Maximum Reverse Recovery Charge - Qrr (µc) 3 300 2 2 2 2 1 1 1 = A 300 A A A A T = 125 C 10 30 70 90 Rate Of Fall Of On-state Current - di/dt (A/µs) M axim um Reve rse Rec ove ry C urren t - Irr (A ) 1 1 1 = A 300 A A A A T = 125 C 10 30 70 90 R a te O f Fa ll O f Fo rw a rd C ur ren t - d i/d t (A /µ s) Fig. 11 - Reverse Recovered Charge Characteristics Fig. 12 - Reverse Recovery Current Characteristics 1E4 Peak O n-state Curren t (A) 1E3 0 1E2 1E1 1E2 1E3 1E4 1E41E1 1E1 1E2 1E3 1E4 Pulse Basew idth (µs) V D = % VDRM Sinusoidal pulse T = C C Fig. 13 - Frequency Characteristics 0 Pulse Base w idth (µs) V = % V D DRM ST303C..C S eries Sinusoid al pulse T = 55 C C 7
Peak O n-state C urrent (A) 1E4 V D = % VDRM V D = % V DRM 0 1E3 0 ST303C..C Se ries Tra pezo id al p ulse Trapezoidal pulse T C = C T C = 55 C di/dt = A/µs di/dt = A/µs 1E2 1E1 1E2 1E3 1E4 1E41E1 1E1 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 14 - Frequency Characteristics Peak O n-state C urrent (A) 1E4 1E3 Snub ber circuit C = 0.47 µf s V = % V D DRM 0 ST303C..C Serie s Trapezoidal pulse Trapezoidal pulse T = C T C C = 55 C di/dt = A/µs di/dt = A/µs 1E2 1E1 1E2 1E3 1E4 1E41E1 1E1 1E2 1E3 1E4 Pulse Base w idth (µs) V D = % V DRM Fig. 15 - Frequency Characteristics 0 Pulse Basew idth (µs) Peak On -state C urrent (A) 1E5 Recta ngular pulse di/dt = A/µs 1E4 joules per pulse 10 5 2 0 jo ule s pe r p ulse 3 2 10 5 1E3 1 3 2 0.5 1 0.4 0.5 1E2 0.4 ST303C..C Serie s Sinusoidal pulse 1E1 1E1 1E2 1E3 1E4 1E41E1 1E1 1E2 1E3 1E4 Pulse Basew idth (µs) Pulse Basew idth (µs) Fig. 16 - Maximum On-state Energy Power Loss Characteristics 8
Instantaneous Gate Voltage (V) 10 1 Rectangular gate pulse a) Recommended load line for rated di/dt : V, 10ohms; tr<=1 µs b) Recommended load line for <=30% rated di/dt : 10V, 10ohms tr<=1 µs VGD Tj=125 C (b) Tj=25 C IGD Device: Frequency Limited by PG(AV) 0.1 0.001 0.01 0.1 1 10 Tj=- C (a) Instantaneous Gate Current (A) (1) PGM = 10W, = ms (2) PGM = W, = 10ms (3) PGM = W, = 5ms (4) PGM = W, = 3.3ms (1) (2) (3) (4) Fig. 17 - Gate Characteristics 9