SIPMOS SmallSignalTransistor Feature NChannel Enhancement mode Logic Level dv/dt rated Pbfree lead plating; RoHS compliant Qualified according to EC Q Product Summary V DS V R DS(on) 6 Ω I D.37 PGSOT3 Type Package Tape and Reel Information PGSOT3 L6433: 4 pcs/reel PGSOT3 L637: pcs/reel Marking Packaging Non dry Non dry Maximum Ratings, at T j = 5 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current T =5 C T =7 C Pulsed drain current I D puls.48 T =5 C I D.37.3 Reverse diode dv/dt dv/dt 6 kv/µs I S =.37, V DS =8V, di/dt=/µs, T jmax =5 C Gate source voltage V GS ± V ESD Class JESD4HBM (<5V) Power dissipation P tot.79 W T =5 C Operating and storage temperature T j, T stg 55... +5 C IEC climatic category; DIN IEC 68 55/5/56 Page 6
Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction soldering point R thjs 5 5 K/W (Pin 4) SMD version, device on PCB: R thj @ min. footprint @ 6 cm cooling area ) 5 5 7 Electrical Characteristics, at T j = 5 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drainsource breakdown voltage V (BR)DSS V V GS =, I D =5µ Gate threshold voltage, V GS = V DS V GS(th).8.4.8 I D =5µ Zero gate voltage drain current I DSS µ V DS =V, V GS =, T j =5 C V DS =V, V GS =, T j =5 C. 5 Gatesource leakage current I GSS n V GS =V, V DS = Drainsource onstate resistance R DS(on) 4 3 Ω V GS =.8V, I D =5m Drainsource onstate resistance R DS(on) 4.8 V GS =4.5V, I D =.3 Drainsource onstate resistance V GS =V, I D =.37 R DS(on) 3.5 6 Device on 4mm*4mm*.5mm epoxy PCB FR4 with 6cm² (single layer, 7 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 6
Electrical Characteristics, at T j = 5 C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance g fs V DS *I D *R DS(on)max,.3.7 S I D =.3 Input capacitance C iss V GS =, V DS =5V, 56 7 pf Output capacitance C oss f=mhz 9.3 Reverse transfer capacitance C rss 3.5 4.4 Turnon delay time t d(on) V DD =5V, V GS =V, 3.3 5 ns Rise time t r I D =.37, R G =6Ω 3. 4.8 Turnoff delay time t d(off) 8.7 3 Fall time t f 9.4 4 Gate Charge Characteristics Gate to source charge Q gs V DD =8V, I D =.37.9.3 nc Gate to drain charge Q gd.8. Gate charge total Q g V DD =8V, I D =.37,.6.4 V GS = to V Gate plateau voltage V (plateau) V DD =8V, I D =.37 3.6 V Reverse Diode Inverse diode continuous forward current I S T =5 C.37 Inv. diode direct current, pulsedi SM.48 Inverse diode forward voltage V SD V GS =, I F = I S.9. V Reverse recovery time t rr V R =5V, I F =l S, 5.7 79 ns Reverse recovery charge Q di F /dt=/µs rr 7.8 7 nc Page 3 6
Power dissipation P tot = f (T ).9 W.6.4 Drain current I D = f (T ) parameter: V GS V.4.3.8 Ptot. ID.4..8.6.6..4.8..4 4 6 8 C 6 T 4 6 8 C 6 T 3 Safe operating area I D = f ( V DS ) parameter : D =, T = 5 C 4 Transient thermal impedance Z thj = f (t p ) parameter : D = t p /T 3 K/W t p =.ms ID R DS(on) = V DS / I D ZthJ D =.5...5.. DC V 3 V DS Page 4 single pulse 3 5 4 3 s t p 3 6
5 Typ. output characteristic I D = f (V DS ) parameter: T j = 5 C, V GS 6 Typ. drainsource on resistance R DS(on) = f (I D ) parameter: Tj = 5 C, V GS ID.7.6.55.5.45.4.35 V 5V 4.5V 4.V 3.9V 3.7V 3.5V 3.V.9V.3V RDS(on) Ω 6 4.3V.9V 3.V 3.5V 3.7V 3.9V 4.V 4.5V 5.V V.3.5. 8 6.5 4..5.5.5.5 3 3.5 4 V 5 V DS 7 Typ. transfer characteristics I D = f ( V GS ); V DS x I D x R DS(on)max parameter: Tj = 5 C.7...3.4.5.7 I D 8 Typ. forward transconductance g fs = f(i D ) parameter: Tj = 5 C.4 S.5.3 ID.4 gfs.5..3.5....5.5.5.5 3 3.5 4 V 5 V GS...3.4.5.7 I D Page 5 6
9 Drainsource onstate resistance R DS(on) = f (T j ) parameter : I D =.37, V GS = V 4 Ω Typ. gate threshold voltage V GS(th) = f (T j ) parameter: V GS = V DS ; I D =5µ. V.8 98% RDS(on) 8 6 4 8 6 98% VGS(th).6.4..8.6 typ. % 4 typ.4. 6 6 C 8 T j Typ. capacitances C = f (V DS ) parameter: V GS =, f= MHz, Tj = 5 C 6 6 C 6 T j Forward character. of reverse diode I F = f (V SD ) parameter: T j 3 pf C iss C IF C oss T j = 5 C typ C rss T j = 5 C typ T j = 5 C (98%) T j = 5 C (98%) 4 8 6 4 8 V 36 V DS Page 6.4.8..6.4 V 3 V SD 6
3 Typ. gate charge V GS = f (Q G ); parameter: V DS, I D =.37 pulsed, T j = 5 C 6 V 4 Drainsource breakdown voltage V (BR)DSS = f (T j ) V VGS V(BR)DSS 4 8 8 6. V DS max.5 VDS max.8 V DS max 6 4 4 98 96 94 9.4.8..6 nc.8 Q G 9 6 6 C 8 T j Page 7 6
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