BSS67S2L OptiMOS Buck converter series Feature NChannel Enhancement mode Logic Level Product Summary V DS 55 V R DS(on) 65 mω I D.54 PGSOT 23 Type Package Ordering Code BSS67S2L PGSOT 23 Q6742S452 Marking BSs Gate pin Drain pin 3 Source pin 2 Maximum Ratings, at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current T =25 C T =7 C I D.54.43 Pulsed drain current T =25 C I D puls 2.2 Gate source voltage V GS ± 2 V Power dissipation T =25 C P tot.36 W Operating and storage temperature T j, T stg 55... +5 C IEC climatic category; DIN IEC 68 55/5/56 Rev. 2. Page 2526
BSS67S2L Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction soldering point (Pin 3) R thjs 29 K/W SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area ) R thj 35 3 Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drainsource breakdown voltage V GS =, I D =m Gate threshold voltage, V GS = V DS I D =2.7µ V (BR)DSS 55 V V GS(th).2.6 2 Zero gate voltage drain current V DS =55V, V GS =, T j =25 C V DS =55V, V GS =, T j =5 C I DSS.. µ Gatesource leakage current V GS =2V, V DS =V Drainsource onstate resistance V GS =4.5V, I D =27m Drainsource onstate resistance V GS =V, I D =27m I GSS n R DS(on) 43 825 mω R DS(on) 346 65 Device on 4mm*4mm*.5mm epoxy PCB FR4 with 6cm² (one layer, 7 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev. 2. Page 2 2526
BSS67S2L Electrical Characteristics Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance g fs V DS 2*I D *R DS(on)max, I D =.54.6.2 S Input capacitance C iss V GS =, V DS =25V, 56 75 pf Output capacitance C oss f=mhz 3 8 Reverse transfer capacitance C rss 7 Turnon delay time t d(on) V DD =3V, V GS =4.5V, 9 4 ns I D =.54, Rise time t r 25 37 R G =3Ω Turnoff delay time t d(off) 2 3 Fall time t f 24 32 Gate Charge Characteristics Gate to source charge Q gs V DD =4V, I D =.54.9.25 nc Gate to drain charge Q gd.57.86 Gate charge total Q g V DD =4V, I D =.54, V GS = to V.7 2.26 Gate plateau voltage V (plateau) V DD =4V, I D =.54 3. V Reverse Diode Inverse diode continuous forward current I S T =25 C.38 Inv. diode direct current, pulsed I SM 2.2 Inverse diode forward voltage V SD V GS =, I F =.54.8. V Reverse recovery time t rr V R =3V, I F =l S, 5 64 ns di F /dt=/µs Reverse recovery charge Q rr 22 28 nc Rev. 2. Page 3 2526
BSS67S2L Power dissipation P tot = f (T ) 2 Drain current I D = f (T ) parameter: V GS V.38 BSS67S2L W.6 BSS67S2L.32.28.5.45 Ptot.24.2 ID.4.35.3.6.25.2.2.8.5..4.5 2 4 6 8 2 C 6 2 4 6 8 2 C 6 T T 3 Safe operating area I D = f ( V DS ) parameter : D =, T = 25 C 4 Transient thermal impedance Z thjs = f (t p ) parameter : D = t p /T ID BSS67S2L R DS(on) = V DS / I D t p = 23.µs µs ms ms ZthJS 3 K/W 2 BSS67S2L D =.5.2. 2 DC 2 single pulse.5.2. 3 V 2 V DS Rev. 2. Page 4 3 7 6 5 4 3 2 s t p 2526
BSS67S2L 5 Typ. output characteristic I D = f (V DS ); T j =25 C parameter: t p = 8 µs 6 Typ. drainsource on resistance R DS(on) = f (I D ) parameter: V GS ID 3 2.5.5 V 6V 5V 4.5V 3.5V.5.5 2 2.5 3 3.5 4 V 5 4V 3V V DS RDS(on) mω 5 2 9 8 7 6 5 4 3 2 3.5V 4V 4.5V 5V 6V V.2.4.6.8.2 I D 7 Typ. transfer characteristics I D = f ( V GS ); V DS 2 x I D x R DS(on)max parameter: t p = 8 µs 8 Typ. forward transconductance g fs = f(i D ); T j =25 C parameter: g fs 2.2 2.2 S.8.6.8.6 ID.4 gfs.4.2.2.8.8.6.6.4.4.2.2.5.5 2 2.5 3 3.5 4 V 5 V GS.4.8.2.6 2.2 I D Rev. 2. Page 5 2526
BSS67S2L 9 Drainsource onstate resistance R DS(on) = f (T j ) parameter : I D = 27 m, V GS = V Typ. gate threshold voltage V GS(th) = f (T j ) parameter: V GS = V DS 9 BSS67S2L mω 2.5 6 V RDS(on) 4 2 VGS(th).5 2 µ µ 8 6 98% 4 2 typ.5 6 2 2 6 C 8 T j Typ. capacitances C = f (V DS ) parameter: V GS =, f= MHz 6 2 2 6 C 8 T j 2 Forward character. of reverse diode I F = f (V SD ) parameter: T j, tp = 8 µs 3 BSS67S2L pf 2 C iss C IF C oss C rss T j = 25 C typ T j = 5 C typ T j = 25 C (98%) T j = 5 C (98%) 5 5 2 V 3 V DS Rev. 2. Page 6 2.4.8.2.6 2 2.4 V 3 V SD 2526
BSS67S2L 3 Typ. gate charge V GS = f (Q Gate ) parameter: I D =.54 pulsed 4 Drainsource breakdown voltage V (BR)DSS = f (T j ) parameter: I D = m 6 BSS67S2L V 66 BSS67S2L V VGS 2 8,2 V DS max,8 V DS max V(BR)DSS 62 6 58 6 56 4 54 2 52.4.8.2.6 2 nc 2.6 Q Gate 5 6 2 2 6 C 8 T j Rev. 2. Page 7 2526
BSS67S2L Published by Infineon Technologies G, Bereichs Kommunikation St.MartinStrasse 53, D854 München Infineon Technologies G 999 ll Rights Reserved. ttention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of noninfringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in lifesupport devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2. Page 8 2526